Carrier Mobility Research Articles

Intrinsically Elastic Semiconductors through Aldehyde-Amine Polycondensation and Its Application on Stretchable Transistor.

With the increasing demand for elastic electronics, as a crucial component, elastic semiconductors have been widely studied. However, there are some issues for the current preparation of elastic semiconductors, such as harsh reaction conditions, low atomic economic utilization, and complicated product separation and purification. Aldehyde-amine polycondensation is an important chemical reaction with the advantages of mild reaction conditions, high atomic-economic efficiency, and easy separation and purification. Herein, intrinsically elastic semiconductors are developed via aldehyde-amine polycondensation, including a semiconducting segment and an elastic segment. The resulting polymer containing 42.62 wt % soft segments exhibits excellent stretchability and mechanical reversibility, especially with a lower modulus. Interestingly, the carrier mobility displays up to 0.04 cm2·V-1·s-1, in the range of the fully conjugated reference polymer (0.1 cm2·V-1·s-1). In brief, this strategy provides important guiding principles for the development of intrinsically elastic polymer semiconductors.

High pressure coupled with Cu deficiency boosts thermoelectric performance in BiCuSeO oxides

Low carrier concentration and mobility have been the primary obstructions to improving the electrical transport properties of BiCuSeO thermoelectric oxides, particularly for excessively low carrier mobility, heavily impeding the development of its thermoelectric performance. Herein, high-pressure technology is adopted to tune the electronic structure motivating carrier mobility, incorporated with the contribution of Cu deficiency to carrier concentration, achieving high carrier mobility of 25 cm2V−1s−1 and outstanding electrical conductivity of 2834.57 Sm−1. Moreover, high densities of grain boundaries and dislocations are introduced by high pressure, accompanied by the effect of Cu vacancies, suppressing phonon transport and depressing lattice thermal conductivity, finally realizing an acceptable zT of 0.56 at 823 K in BiCu0.97SeO. This work demonstrates that high pressure can be compatible with other methods, realizing synergetic optimizations in coupled parameters and thus improving thermoelectric performance in BiCuSeO oxides.

Exploring the Ambipolar Charge Carrier Mobility, Mesomorphic, and Gel Properties in Nitrile Extended Quinoxaline and Phenanthro[a]phenazine Discotic Liquid Crystals

Exploring the Ambipolar Charge Carrier Mobility, Mesomorphic, and Gel Properties in Nitrile Extended Quinoxaline and Phenanthro[<i>a</i>]phenazine Discotic Liquid Crystals

Narrow bandgap two-dimensional Nb2SiTe4 as broadband saturable absorber for optical switch

Nb2SiTe4 is a novel narrow-bandgap (∼0.39 eV) two-dimensional material with a high optical absorption coefficient, high carrier mobility, and outstanding air stability, which shows great application potential in broadband optical switches. In this study, high-quality layered Nb2SiTe4 nanosheets were efficiently fabricated by the mechanical exfoliation method, and the basic characterizations were carried out comprehensively. Nondegenerate pump-probe technology was implemented to systematically explore the photocarrier dynamics in the Nb2SiTe4 nanosheets, which exhibit the ultrafast recovery time of Nb2SiTe4 (∼0.3 ps). Furthermore, broadband passively Q-switched lasers operating at 1.0, 2.0, and 2.8 μm with the shortest pulse width of 380, 549, and 218 ns were achieved based on Nb2SiTe4 saturable absorber. This work demonstrates the significant advantages of an optical switch based on Nb2SiTe4 saturable absorber, including a narrow output pulse width, wide working bandwidth, high damage threshold, excellent oxidation resistance, and a straightforward synthesis method, which underscore the immense potential of Nb2SiTe4 broadband optical switches in applications involving mid-infrared lasers.

Positive Effects of Guanidinium Salt Post-Treatment on Multi-Cation Mixed Halide Perovskite Solar Cells

As one of the most promising photovoltaic technologies, perovskite solar cells (PSCs) exhibit high absorption coefficients, tunable bandgaps, large carrier mobilities, and versatile fabrication techniques. Nevertheless, the commercialization of the technology is hindered by poor material stability, short device lifetimes and the scalability of fabrication techniques. To address these technological drawbacks, various strategies have been explored, with one particularly promising approach involving the formation of a low-dimensional layer on the surface of the three-dimensional perovskite film. In this work, we demonstrate the use of guanidinium tetrafluoroborate, CH6BF4N3, (GATFB) as a post-treatment step to enhance the performance of PSCs. Compared with the control sample, the application of GATFB improves the film surface topology, reduces surface defects, suppresses non-radiative recombination, and optimizes band alignment within the device. These positive effects reduce recombination losses and enhance charge transport in the device, resulting in PSCs with an open-circuit voltage (VOC) of 1.18 V and a power conversion efficiency (PCE) of 19.7%. The results obtained in this work exhibit the potential of integrating low-dimensional structures in PSCs as an effective approach to enhance the overall device performance, providing useful information for further advancement in this rapidly evolving field of photovoltaic technology.

Positive Effects of Guanidinium Salt Post-Treatment on Multi-Cation Mixed Halide Perovskite Solar Cells.

As one of the most promising photovoltaic technologies, perovskite solar cells (PSCs) exhibit high absorption coefficients, tunable bandgaps, large carrier mobilities, and versatile fabrication techniques. Nevertheless, the commercialization of the technology is hindered by poor material stability, short device lifetimes and the scalability of fabrication techniques. To address these technological drawbacks, various strategies have been explored, with one particularly promising approach involving the formation of a low-dimensional layer on the surface of the three-dimensional perovskite film. In this work, we demonstrate the use of guanidinium tetrafluoroborate, CH6BF4N3, (GATFB) as a post-treatment step to enhance the performance of PSCs. Compared with the control sample, the application of GATFB improves the film surface topology, reduces surface defects, suppresses non-radiative recombination, and optimizes band alignment within the device. These positive effects reduce recombination losses and enhance charge transport in the device, resulting in PSCs with an open-circuit voltage (VOC) of 1.18 V and a power conversion efficiency (PCE) of 19.7%. The results obtained in this work exhibit the potential of integrating low-dimensional structures in PSCs as an effective approach to enhance the overall device performance, providing useful information for further advancement in this rapidly evolving field of photovoltaic technology.

Enhanced ambient-stability and charge transport property of the CsPbBr3@Polyaniline

Although all-inorganic lead halide perovskites (CsPbX3 (X = Cl, Br, I)) have received widespread attention due to excellent optoelectronic properties, their low carrier mobility and poor stability have limited their application in photodetection. In this study, to alleviate these problems, CsPbBr3@Polyaniline composite is fabricated by passivating CsPbBr3 quantum dots (QDs) into a CSA-doped polyaniline conducting polymer. Notably, polyaniline is employed as a protective layer to block the structure damage of CsPbBr3 QDs against water, light and heat. The contact between polyaniline and CsPbBr3 QDs forms a type II heterojunction for charge transfer, which greatly reduces the recombination rate of charge carriers compared to pristine CsPbBr3 QDs. Benefiting from the high stability and enhanced charge mobility, CsPbBr3@Polyaniline-based photodetector achieves improved photocurrent signal and optical response time. The results demonstrate that the surface passivation could resolve the crucial stability problem and simultaneously facilitate the superior performance of perovskite optoelectronic devices.

A first-principles prediction of novel Janus ZrGeZ3H (Z = N, P, and As) monolayers: Raman active modes, piezoelectric responses, electronic properties, and carrier mobility.

In this article, an attempt is made to explore new materials for applications in piezoelectric and electronic devices. Based on density functional theory calculation, we construct three Janus ZrGeZ3H (Z = N, P, and As) monolayers and study their stability, piezoelectricity, Raman response, and carrier mobility. The results from phonon dispersion spectra, ab initio molecular dynamics simulation, and elastic coefficients confirm the structural, thermal, and mechanical stability of these proposed structures. The ZrGeZ3H monolayers are indirect band gap semiconductors with favourable band gap energy of 1.15 and 1.00 eV for the ZrGeP3H and ZrGeAs3H, respectively, from Heyd-Scuseria-Ernzerhof functional method. It is found that the Janus ZrGeZ3H monolayers possess both in-plane and out-of-plane piezoelectric coefficients, revealing that they are potential piezoelectric candidates. In addition, the carrier mobilities of electrons and holes along transport directions are anisotropic. Notably, the ZrGeP3H and ZrGeAs3H monolayers have high electron mobility of 3639.20 and 3408.37 cm2 V-1 s-1, respectively. Our findings suggest the potential application of the Janus ZrGeZ3H monolayers in the piezoelectric and electronic fields.

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect.

Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive this development forward, a deep understanding of fundamental material properties, such as charge carrier behavior, is essential and can also unveil new and unforeseen applications. This underscores the necessity for novel characterization tools to study group-III nitride materials and devices. The optical Hall effect (OHE) emerges as a contactless method for exploring the transport and electronic properties of semiconductor materials, simultaneously offering insights into their dielectric function. This non-destructive technique employs spectroscopic ellipsometry at long wavelengths in the presence of a magnetic field and provides quantitative information on the charge carrier density, sign, mobility, and effective mass of individual layers in multilayer structures and bulk materials. In this paper, we explore the use of terahertz (THz) OHE to study the charge carrier properties in group-III nitride heterostructures and bulk material. Examples include graded AlGaN channel high-electron-mobility transistor (HEMT) structures for high-linearity devices, highlighting the different grading profiles and their impact on the two-dimensional electron gas (2DEG) properties. Next, we demonstrate the sensitivity of the THz OHE to distinguish the 2DEG anisotropic mobility parameters in N-polar GaN/AlGaN HEMTs and show that this anisotropy is induced by the step-like surface morphology. Finally, we present the temperature-dependent results on the charge carrier properties of 2DEG and bulk electrons in GaN with a focus on the effective mass parameter and review the effective mass parameters reported in the literature. These studies showcase the capabilities of the THz OHE for advancing the understanding and development of group-III materials and devices.

Introduction of interstitial Cu atoms is beneficial to improving the thermoelectric performance of TiNiSn

The effect of interstitial Cu on the thermoelectric properties of TiNiSn was evaluated by microwave and spark plasma sintering. It is demonstrated that the interstitial Cu optimize the carrier concentration and mobility, and that segregation of Cu at grain boundaries makes an additional contribution to the electrical conductivity. The goal of great increasing the electrical conductivity while maintaining a high Seebeck coefficient is realized, resulting in a maximum of 3703.6 μWm−1K−2 at 673 K. Furthermore, the samples enhance the high-frequency phonon scattering by introducing more point defects. And the mass fluctuation scattering and stress field fluctuation scattering induced by the interstitial Cu further decrease the lattice thermal conductivity to 1.91 Wm−1K−1 at 773 K, a reduction of 64.7 % compared to the pure sample. The dimensionless figure of merit (ZT) of the TiNiCu0.055Sn is even higher by 78.7 %, with a maximum of 0.62.

Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals.

Rhombohedral-stacked transition-metal dichalcogenides (3R-TMDs), which are distinct from their hexagonal counterparts, exhibit higher carrier mobility, sliding ferroelectricity, and coherently enhanced nonlinear optical responses. However, surface epitaxial growth of large multilayer 3R-TMD single crystals is difficult. We report an interfacial epitaxy methodology for their growth of several compositions, including molybdenum disulfide (MoS2), molybdenum diselenide, tungsten disulfide, tungsten diselenide, niobium disulfide, niobium diselenide, and molybdenum sulfoselenide. Feeding of metals and chalcogens continuously to the interface between a single-crystal Ni substrate and grown layers ensured consistent 3R stacking sequence and controlled thickness from a few to 15,000 layers. Comprehensive characterizations confirmed the large-scale uniformity, high crystallinity, and phase purity of these films. The as-grown 3R-MoS2 exhibited room-temperature mobilities up to 155 and 190 square centimeters per volt second for bi- and trilayers, respectively. Optical difference frequency generation with thick 3R-MoS2 showed markedly enhanced nonlinear response under a quasi-phase matching condition (five orders of magnitude greater than monolayers).

A comprehensive analysis of ultra low power GNRFET based 20T hybrid full adder for computing applications

In an era where energy efficiency is as important as computational speed, this paper introduces a new full adder circuit design that effectively integrates dynamic power gathering (DPG) power conservation benefits with XOR-XNOR pass-transistor logic (PTL) area and performance efficiencies using graphene nanoribbon field-effect transistors. GNRFETs are useful for digital logic due to their high carrier mobility and tunable bandgap. The paper describes the circuit’s seamless transition full adder response, demonstrating the tri-mode dynamic power gating strategy capacity to reduce static power depletion. The proposed hybrid full adder performs well with 7.76 nW power consumption, 481 ps latency, and 3.73 aJ PDP. This reduces power consumption by 99.9%, delay by 99.0%, and PDP by 99.8% compared to other adders. The effects of temperature, voltage, Noise immunity and Carry Forward Adders integration on power, delay, and PDP are also analysed, proving the design’s robustness. The adaptability of our full adder architecture allows its implementation in more complicated arithmetic and logic units, indicating a scalable and energy-efficient paradigm for future integrated circuits.

Covalent Bond Torsion-Enabled Unique Crystal-Phase Transformation of an Organic Semiconductor for Multicolor Light-Emitting Transistors.

High-mobility and color-tunable highly emissive organic semiconductors (OSCs) are highly promising for various optoelectronic device applications and novel structure-property relationship investigations. However, such OSCs have never been reported because of the great trade-off between mobility, emission color, and emission efficiency. Here, we report a novel strategy of molecular conformation-induced unique crystalline polymorphism to realize the high mobility and color-tunable high emission in a novel OSC, 2,7-di(anthracen-2-yl) naphthalene (2,7-DAN). Interestingly, 2,7-DAN has unique crystalline polymorphism, which has an almost identical packing motif but slightly different molecular conformation enabled by the small bond rotation angle variation between anthracene and naphthalene units. More remarkably, the subtle covalent bond rotation angle change leads to a big change in color emission (from blue to green) but does not significantly modify the mobility and emission efficiency. The carrier mobility of 2,7-DAN crystals can reach up to a reliable 17 cm2 V-1 s-1, which is rare for the reported high-mobility OSCs. Based on the unique phenomenon, high-performance light-emitting transistors with blue to green emission are simultaneously demonstrated in an OSC crystal. These results open a new way for designing emerging multifunctional organic semiconductors toward next-generation advanced molecular (atomic)-scale optoelectronics devices.

Principles, fabrication, and applications of halide perovskites‐based memristors

AbstractIn recent decades, the microelectronics industry has developed rapidly based on the von Neumann architecture and under the guidance of Moore's law. However, as the size of electronic devices approaches the limit and power consumption increases, traditional microelectronic materials and devices are facing more and more challenges. As a new type of semiconductor material, halide perovskites (HPs) have excellent photoelectric characteristics, such as high carrier mobility, controllable band structure, etc., which have been widely used in solar cells, light emitting diodes (LEDs), photodetectors, memristors, and in other fields. Among them, the memristor, as a new type of electronic device, is very promising for in‐memory computing with low power consumption by breaking the limit of von Neumann architecture. Especially, HPs‐based memristors show outstanding photoelectric response performance, low power consumption, and flexible wearability, allowing them to hold great application potential in logical operation, polymorphic storage, and neuromorphic computing, etc. In this review, we first briefly introduce the basic characteristics and preparation methods of HPs. Secondly, the development history, device structure, and performance parameters of memristors are depicted in detail. Thirdly, the resistance mechanism and application of HPs‐based memristors are discussed. Finally, the research status and development prospects of HPs‐based memristors are outlined.

2D Janus TeMoZAZ’ (A = Si,Ge; Z,Z’ = N, P, As; Z ≠ Z'): First‐Principles Insight into the Electronics, and Piezoelectric Properties

AbstractJanus materials possess a diverse array of properties resulting from the breaking of mirror and inversion symmetries, holding significant potential for nanodevices. This study explores the novel TeMoZAZ' (A = Si,Ge; Z,Z' = N, P, As; Z ≠ Z') monolayers derived from the MoA2Z4 monolayer. Utilizing first‐principles calculations, the stability, electronic, transport, mechanical, and piezoelectric properties of the TeMoZAZ' monolayers are investigated. Among the 12 investigated structures, only five‐ TeMoNSiP, TeMoNSiAs, TeMoPSiAs, TeMoAsSiP and TeMoAsGeP monolayers‐ are found to be stable. The electronic properties analysis reveals metallic behavior in the TeMoNSiAs monolayer, while the remaining structures exhibit indirect or direct band gap semiconductor properties. Futher examination of the semiconducting monolayers indentifies the TeMoAsSiP monolayer with notably high hole carrier mobility along the y‐direction, reaching up to 3622.33 cm2 s−1 V−1. Moreover, investigation into the piezoelectric properties of these four semiconductor structures suggests their suitability for diverse applications in piezoelectric devices. Additionally, the effects of biaxial strain on the electronic and piezoelectric properties of these four semiconductor structures are explored. These findings propose a novel approach for designing 2D Janus materials, expanding the repertoire of 2D MA2Z4‐based Janus family and offering promising candidates for optoelectronic devices, wearable devices, and electromechanical systems.

Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power

Nanosheet transistors are poised to become the preferred choice for the next generation of smaller-sized devices in the future. To address the future demand for high-performance and low-power computing applications, this study proposes a nanosheet structure with a vertically stacked design, featuring a high ION/IOFF ratio. This Nanosheet design is combined with an induced tunnel field-effect transistor. By utilizing SiGe with a carrier mobility three times that of Si and employing a line tunneling mechanism, the research successfully achieves superior Band to Band characteristics, resulting in improved switching behavior and a lower Subthreshold Swing (SS). Comparative studies were conducted on three TFET types: Nanosheet PIN TFET, Nanosheet Schottky iTFET, and Fin iTFET. Results show that the Nanosheet PIN TFET has a higher ION/IOFF ratio but poorer SSavg values at 47.63 mV/dec compared to the others. However, with a SiGe Body thickness of 3 nm, both Nanosheet iTFET and Fin iTFET exhibit higher ION/IOFF ratios and superior SSavg values at 17.64 mV/dec. These findings suggest the potential of Nanosheet iTFET and Fin iTFET for low-power, lower thermal budgets, and fast-switching applications.

Universal strain engineering for enhancing the hole mobility and dopability in p-type semiconductors

Modern electronic and optoelectronic devices rely on the development of the complementary pair of n-type and p-type semiconductors. However, it is often seen that n-type semiconductors are easier to realize and offer superior performances than their p-type counterparts, with p-type semiconductors showing much lower hole mobility and inefficient carrier doping. Here, by using first-principles studies, we demonstrate that lattice strain engineering can be a universal approach to enhance the hole mobility and dopability in p-type semiconductors. A broad class of p-type semiconductors, including anion p orbital derived valence band compounds (nitrides, oxides, halides, and chalcogenides), s orbital based post-transition metal oxides (e.g., SnO), and d-orbital based transition metal oxides (e.g., NiO), have been applied on strain to demonstrate their valence band modulation ability for the purpose of increasing the hole mobility and p-type dopability. We show that compressive lattice strain generally results in an upshifted valence band edge and reduced effective hole mass, leading to enhanced p-type dopability and increased hole mobility. Our work highlights strain engineering as a universal and effective approach for achieving better performed p-type compound semiconductors.

Odd-Even Alkyl Chain Effects on the Structure and Charge Carrier Transport of Two-Dimensional Sn-Based Perovskite Semiconductors.

Oscillations in the chemical or physical properties of materials, composed of an odd or even number of connected repeating methylene units, are a well-known phenomenon in organic chemistry and materials science. So far, such behavior has not been reported for the important class of materials, perovskite semiconductors. This work reports a distinct odd-even oscillation of the molecular structure and charge carrier transport properties of phenylalkylammonium two-dimensional (2D) Sn-based perovskites in which the alkyl chains in the phenylalkylammonium cations contain varying odd and even carbon numbers. Density functional theory calculations and grazing-incidence wide-angle X-ray scattering characterization reveal that perovskites with organic ligands containing an alkyl chain with an odd number of carbon atoms display a disordered crystal lattice and tilted inorganic octahedra accompanied by reduced mobilities. In contrast, perovskites with cations of an even number of carbon atoms in the alkyl chain form more ordered crystal structures, resulting in improved charge carrier mobilities. Our findings disclose the importance of minor changes in the molecular conformation of organic cations have an effect on morphology, photophysical properties, and charge carrier transport of 2D layered perovskites, showcasing alkyl chain engineering of organic cations to control key properties, of layered perovskite semiconductors.

Growth and photoelectrical properties of CsPbBr3-xIx (0 ≤ x < 1) single crystals

The all-inorganic halide perovskite CsPbBr3 possesses excellent optoelectronic characteristics and has a high opportunity for application in a variety of photoelectric devices. CsPbBr3 is known for its relatively low ionic migration and higher resistivity compared to other perovskite compositions. In addition, the performance in X-ray detectors can be further improved by the addition of I- dopants. The addition of I- dopants has been shown to be an effective way to improve these properties. The vertical Bridgman method was used to grown I--doped CsPbBr3 crystals. The crystal structure, optical characteristics, electrical characteristics, and X-ray detection capabilities oIn addition, an efficient photon recycling, that is, a repeated photon emission and absorption inside the crystal, has been recently observed in both halide perovskite single crystals and thin filmsf CsPbBr3-xIx (0 ≤ x < 1) single crystals were all systematically investigated. The results indicate that I--doping can adjust the band gap, increase the resistivity and carrier mobility, and reduce the trap density and dark current, providing the possible application of halide perovskite in various optoelectronic devices.

Engineering of sp2-Carbon-Conjugated porous polymer electrodes for Solar-Driven electrochemical uranium extraction

The sp2-carbon-conjugated porous polymers (sp2c-CPPs) that possess high porosity, chemical stability, and carrier mobility are potential for uranium extraction from seawater, which is tremendous meaningful for the rapidly growing demands of the nuclear industry due to the abundant uranium resources (4.5 billion tons) in ocean. Here, we report the synthesis of three sp2c-CPP films (DMPN-TFPT, BN-TFPT and TMTN-TFPT) directly on Cu substrate that can work as electrodes for electrochemical uranium extraction. Furthermore, we designed a photovoltaic-electrocatalysis (PV-EC) system to enhance the uranium extraction capacity, meanwhile, modified oxime groups on sp2c-CPPs film to enhance uranium ion selectivity. The DMPN-TFPT electrode shows ultra-high uranium extraction performance (1022.02 mg m−2) in 8 ppm uranyl-spiked simulated seawater, which is higher than that of BN-TFPT film (426.27 mg m−2) and TMTN-TFPT film (607.30 mg m−2) because of the higher in-plane electron delocalization. Additionally, in ultra-low concentration of simulated seawater (3.3 ppb), the DMPN-TFPT film also exhibited a high capacity up to 81.74 mg m−2 within 30 days. This work shows the great potential of sp2c-CPP films on solar-driven electrochemical uranium extraction.