Mobility-lifetime Product Research Articles

Transport properties of h-BN lateral devices

One of the well-established and significant applications of hexagonal boron nitride (h-BN) is in solid-state neutron detectors, which necessitate the development of quasi-bulk h-BN crystals. To advance the material and device development of h-BN, it is essential to characterize its bulk electrical transport properties. However, this task is challenging due to h-BN's ultrawide bandgap (UWBG) of approximately 6.1 eV, which results in an extremely high electrical resistivity, typically exceeding 1012 Ω⋅cm. On the other hand, the mobility-lifetime (μτ) product, a key figure of merit for determining the overall device performance, is more readily accessible through the characterization of the I-V characteristics under illumination. In this study, we investigate the in-plane μτ products of lateral devices fabricated from freestanding quasi-bulk h-BN wafers synthesized by hydride vapor phase epitaxy. Our results reveal an unexpected decrease in the in-plane μτ product as the device width decreases. Utilizing a simple two-region carrier transport model, where the central region of the device represents the bulk h-BN material free from metal contacts and the two edge regions are influenced by metal contacts, we demonstrate that the μτ product in the edge areas covered by metal contacts decreases by nearly two orders of magnitude compared to the bulk value. We attribute this significant reduction in μτ product to the layered crystalline structure of h-BN, which permits metal atoms to infiltrate into the interlayer spacings. As a result, the measured μτ product is significantly lower than the true bulk value. These findings provide valuable insights into the design and fabrication of high-performance h-BN devices, which typically leverage its exceptional in-plane transport properties.

Centimeter-Sized CsPbBr3 Single-Crystal Films for Energy-Resolved Radiation Detection.

Metal halide perovskites (MHPs) are promising materials for radiation detection. Compared with polycrystalline films, single crystals (SCs) have lower defect density, higher carrier mobility, and lifetime. However, the direct synthesis of MHP SCs for large-area flat panel imaging detectors remains challenging. Here, we show that high-quality centimeter-sized CsPbBr3 SCs with thicknesses between 0.25 mm and 1 mm can be grown by a space-confined inverse temperature method. The addition of choline bromide to the precursor solution reduces the defect density and suppresses ion migration of the CsPbBr3 SCs, leading to a high resistivity of 2.5 × 1010 Ω cm and a high mobility-lifetime product of over 1 × 10-3 cm2 V-1. The CsPbBr3 SC spectral detectors exhibit an energy resolution of 14.96% for 241Am 59.5 keV X-ray and 15.95% for 5.48 MeV α-particles. Moreover, a prototype 3 × 3 pixelated detector based on the large-area SC shows a consistent high performance for all pixels, making it promising for high-resolution flat panel imaging detectors.

Organic Spacers Modulated Low Dose X-Ray Detection in Hybrid Halide 2D Perovskites: Unveiling Exciton Dynamics.

In this study, we investigate how modulating organic spacers in perovskites influences their X-ray detection performance and reveal the mechanism of low-dose detection with high sensitivity using femtosecond-transient absorption spectroscopy (fs-TAS). Particularly, we employ N,N,N',N'-tetramethyl-1,4-phenylenediammonium (TMPDA) and N,N-dimethylphenylene-p-diammonium (DPDA) as organic spacers to synthesize 2D perovskite single crystals (SCs). We find that DPDA-based SCs exhibit reduced interplanar spacing between inorganic layers, leading to increased lattice packing. Density functional theory (DFT) results indicate the reduced effective mass and lower lattice distortion in (DPDA)PbBr4 suppressing the formation of self-trapped exciton (STEs) and electron-phonon coupling and enhancing carrier delocalization in these SCs. Further, X-ray detection measurements reveal that (DPDA)PbBr4 demonstrates higher sensitivity than (TMPDA)PbBr4, attributed to its enhanced carrier delocalization, and higher mobility-lifetime product. The limit of detection (LoD) for (DPDA)PbBr4 is determined to be 13 nGy/s, significantly lower than both commercial detectors and state-of-the-art perovskite-based X-ray detectors. Furthermore, fs-TAS study reveals that (DPDA)PbBr4 crystals exhibit prolonged hot STE cooling and decay lifetimes, which directly correlate with their higher sensitivity. This study highlights the impact of organic spacers on X-ray detection performance, providing a framework for designing ultra-low LoD detectors essential for health and security applications.

Lifetime based on mobility-lifetime product of photoconductivity in CdS single crystals

Lifetime based on mobility-lifetime product of photoconductivity in CdS single crystals

Large Scale Lead-Free Perovskite Polycrystalline Wafer Achieved by Hot-Pressed Strategy for High-Performance X-Ray Detection.

Halide perovskites (HPs) have demonstrated excellent direct X-ray detection performance. Lead-free perovskite polycrystalline wafers have outstanding advantages in large-area X-ray imaging applications due to their area-scalability, thickness-controllability, large bulk resistivity, and ease of integration with large-area thin film transistor arrays. However, currently lead-free perovskite polycrystalline wafers possess low sensitivity, typically less than 1000 µC Gy-1 cm-2, which severely limits their X-ray detection applications. Here, high-quality and large scale polycrystalline wafers of AG3Bi2I9 (AG: aminoguanidinium) with short intercluster distances are successfully prepared using a hot-pressing method. The wafers possess high mobility-lifetime product of 5.66 × 10-3 cm2 V-1 and therefore achieve high X-ray sensitivity of 2675 µC Gy-1 cm-2, which can be comparable to those of the high-quality single crystal counterpart reported by the previous research (7.94 × 10-3 cm2 V-1 and 5791 µC Gy-1 cm-2), and represent the best results of the currently lead-free HP polycrystalline wafers. Besides, the wafers exhibit the X-ray detection limit as low as 11.8 nGy s-1, excellent long-term working stability, and high spatial resolution of 5.9 lp mm-1 in imaging. The findings demonstrate that AG3Bi2I9 polycrystalline wafers are feasible for high-performance X-ray detection and imaging system.

Growth and Performance of Perovskite Semiconductor CsPbX3 (X = Cl, Br, I, or Mixed Halide) for Detection and Imaging Applications.

The material family halide perovskites has been critical in recent room-temperature radiation detection semiconductor research. Cesium lead bromide (CsPbBr3) is a halide perovskite that exhibits characteristics of a semiconductor that would be suitable for applications in various fields. In this paper, we report on the correlations between material purification and crystal material properties. Crystal boules of CsPbX3 (where X = Cl, Br, I, or mixed) were grown with the Bridgman growth method. We describe in great detail the fabrication techniques used to prepare sample surfaces for contact deposition and sample testing. Current-voltage measurements, UV-Vis and photocurrent spectroscopy, as well as photoluminescence measurements, were carried out for material characterization. Bulk resistivity values of up to 3.0 × 109 Ω∙cm and surface resistivity values of 1.3 × 1011 Ω/□ indicate that the material can be used for low-noise semiconductor detector applications. Preliminary radiation detectors were fabricated, and using photocurrent measurements we have estimated a value of the mobility-lifetime product for holes (μτ)h of 2.8 × 10-5 cm2/V. The results from the sample testing can shed light on ways to improve the crystal properties for future work, not only for CsPbX3 but also other halide perovskites.

Research on the Fabrication and X‐Ray Detection Performance of MAPbBr3‐Based 3D/2D Heterojunctions

Perovskite materials, renowned for their high mean atomic number, charge carrier mobility–lifetime product, and X‐ray absorption coefficient, have emerged as exceptional candidates for the fabrication of high‐sensitivity X‐ray detectors. Herein, a BA2PbBr4/MAPbBr3 heterojunction is epitaxially grown, with ion migration effectively suppressed through the passivation of surface defects of the 3D heterojunction. Additionally, the presence of an internal electric field within the heterojunction facilitated the extraction and accumulation of photoinduced charge carriers, further enhancing device sensitivity (5964.05 μC Gy−1 cm−2). The fabricated 2D/3D perovskite heterojunction devices show outstanding self‐driven X‐ray detection performance at 0 V mm−1 bias (1195.5 μC Gy−1 cm−2), surpassing that of α‐Se detectors (20 μC Gy−1 cm−2). The proposed method for the fabrication of self‐driven detectors is relatively simple and is therefore expected to contribute to the commercialization of perovskite‐based X‐ray detectors.

Improvement of X-ray response of CZT films by post-annealing

CdZnTe (CZT) epitaxial films are promising for X-ray flat panel detectors due to their ability for large area fabrication, high absorption efficiency, and excellent detective quantum efficiency (DQE). However, challenges like image lag, ghosting, and reduced DQE due to long response times and high dark currents persist. This study introduces a novel post-in-situ annealing technique to enhance CZT film sensitivity and transient response. Results show that a brief 20 s annealing treatment increased surface Zn content, raising detector resistivity from 3.5 × 109 Ω·cm to 3.3 × 1010 Ω·cm while reducing leakage current at high voltages. This treatment also significantly reduced surface defects, improving CZT film detectors’ X-ray response time. Moreover, the electrons mobility-lifetime product (μτ)e improved from 2.30 × 10−5 cm2/V to 2.17 × 10−4 cm2/V, indicating enhanced charge carrier dynamics crucial for high-speed X-ray detection. Notably, the X-ray response sensitivity achieved a commendable 126 μC G−1· cm−2 a bias of 30 V. In conclusion, in-situ annealing represents a remarkable step forward in the development of CZT technology for X-ray flat panel imaging, addressing critical issues and potentially broadening its applications in medical and industrial imaging systems.

High Sensitivity X-Ray Detectors with Low Degradation Based on Deuterated Halide Perovskite Single Crystals.

Methylammonium lead single crystal (MAPbI3 SC) possesses superior optoelectronic properties and low manufacturing cost, making it an ideal candidate for X-ray detection. However, the ionic migration of the perovskites usually leads to instability, dark current drift, and hysteresis of the detector, limiting their applications in well-established technologies. Here, a series of X-ray detectors of MAPbI3 SCs are reported with different degrees of deuteration (DxMAPbI3, x = 0, 0.15, 0.75, 0.99). By controlling the content of deuterium (D) in organic cations, the sensitivity, detection limits, ion migration, and resistivity of the detector can be controlled, thereby improving its performance. Due to stronger hydrogen bonds (N─D···I), the ion activation energy significantly increases to 886 meV. Consequently, the D0.99MAPbI3 SC detector shows more than five-fold enhancement, achieving a record-high mobility-lifetime (µτ) product of 5.39 × 10-2cm2V-1, with an ultrahigh sensitivity of 2.18 × 106 µC Gy-1 cm-2 under 120keV hard X-ray and a low detection limit of 4.8 nGyair s-1, as well as long-term stability. The study provides a straightforward strategy for constructing ultrasensitive X-ray detection and imaging systems based on perovskite SCs.

Selenophosphate Pb2P2Se6 Single Crystals Growth by Chemical Vapor Transport (CVT) Method for Radiation Detection.

The heavy metal selenophosphate Pb2P2Se6 emerges as a promising room-temperature X-ray/γ-ray detectors due to its high resistivity, robust radiation-blocking capability, and outstanding carrier mobility-lifetime product, etc. However, the high activity of phosphides poses significant impediment to the synthesis and single crystal growth. In this work, we have prepared high-quality Pb2P2Se6 single crystals with using the chemical vapor transport (CVT) method. The XRD analysis combined with EDS result confirmed the uniform composition of the resulting as-grown single crystals, while UV-Vis-NIR transmittance spectra revealed the bandgap of 1.89 eV. Selected area electron diffraction patterns indicated the crystal belonged to the P21/c(14) space group. Additionally, the Au/Pb2P2Se6/Au device is fabricated, which exhibits a robust X-ray response with a sensitivity of 648.61 μC Gy-1 cm-2 at 400 V mm-1 under 50 kVp. Notably, the device also excels in alpha particle detection, boasting a resolution of ~14.48 % under a bias of 400 V bias. The hole mobility-lifetime product (μτ)h of Pb2P2Se6 is estimated to be ~2.58×10-5 cm2 V-1. The results underscore potential applications of Pb2P2Se6 crystal is in the field of the semiconductor radiation detectors.

Rational Design of A-Site Cation for High Performance Lead-Free Perovskite X-Ray Detectors.

Design of hypotoxic lead-free perovskites, e.g. Bismuth(Bi)-based perovskites, is much beneficial for commercialization of perovskite X-ray detectors due to their strong radiation absorption. Nevertheless, the design principles governing the selection of A-site cations for achieving high-performance X-ray detectors remain elusive. Here, seven molecules (methylamine MA, amine NH3, dimethylbiguanide DGA, phenylethylamine PEA, 4-fluorophenethylamine p-FPEA, 1,3-propanediamine PDA, and 1,4-butanediamine BDA) and calculated their dipole moments and interaction strength with metal halide (BiI3) are selected. The first-principles calculations and related spectroscopy measurements confirm that organic molecules (DGA) with large dipole moments can have strong interactions with perovskite octahedron and improve the carrier transport between the organic and inorganic clusters. Consequently, zero-dimensional single crystal (SC) (DGA)BiI5∙H2O is synthesized. The (DGA)BiI5∙H2O SCs demonstrate an exceptional carrier mobility-lifetime product of 6.55×10-3cm2V-1, resulting in the high sensitivity of 5879.4µCGyair -1cm-2, featuring a low detection limit (4.7nGyairs-1) and remarkable X-ray irradiation stability even after 100 days of aging at a high electric field (100Vmm-1). Furthermore, the (DGA)BiI5∙H2O SCs for imaging, achieving a notable spatial resolution of 5.5lpmm-1 are applied. This investigation establishes a pathway for systematically screening A-site cations to design low-dimensional SCs for high-performance X-ray detection.

Calculation of the mobility-lifetime product of charge carriers in cubic CsPbX3 (X = Cl, Br, I) perovskites under pressure

In recent years, there has been a growing interest in using inorganic halide perovskites for designing gamma-ray and X-ray detectors. To select the appropriate perovskite for detector design, it is important to consider the mobility-lifetimes (μτ) product of the charge carriers. A high value of the μτ product increases charge collection and simplifies detector construction. It is worth noting that the application of hydrostatic pressure can cause changes in the crystal structure, which affect the physical properties and value of the μτ product. This paper focuses on investigating the μτ product of charge carriers in the cubic phase of CsPbX3 (X = Cl, Br, I) perovskites under different hydrostatic pressures. Calculations are performed using a method based on the deformation potential theory. The results show that with increasing pressure, CsPbI3 perovskite shows a huge increase in the μτ product. Specifically, under pressure up to 6 GPa, the μτ product for electrons and holes increases by a factor of 233.8 and 1764.7, respectively, with respect to zero pressure. Additionally, calculations of their optical properties have revealed that these materials can be used in UV light detectors and photovoltaic devices.

Freezing non-radiative recombination in high-performance CsPbBr3 single crystal x-ray detector

Though CsPbBr3 single crystals (SCs) possess intriguing photoelectronic properties for x/γ-ray detection, the serious ion migration and high thermally activated carrier concentration at room temperature (RT), typically associated with defect states in CsPbBr3 crystals, result in a high dark current and drift of baseline, hindering their potential applications. In this investigation, liquid nitrogen cooling is proposed to freeze deep-level defects in CsPbBr3 SCs, thereby suppressing the ion migrations and decreasing the thermally excited carrier concentration. Utilizing photoluminescence (PL) and time-resolved PL spectra, coupled with theoretical models for photoexcitation and photoemission processes, the freezing of deep-level defects at liquid nitrogen temperature (LNT) is confirmed, which is conducive to decreasing non-radiative recombination. At LNT, the CsPbBr3 SC exhibits a higher resistivity of 4.95 × 1011 Ω cm and a higher mobility–lifetime product of 9.54 × 10−3 cm2 V−1, in contrast to the RT values of 3.86 × 109 Ω cm and 3.67 × 10−3 cm2 V−1, respectively. Furthermore, the x-ray detector at LNT exhibits a high sensitivity of 9309 μC Gyair−1 cm−2 and an impressively low detection limit of 0.054 nGy s−1, which offers a route for obtaining highly sensitive x-ray detectors for applications including ultra-low dose radiation imaging.

Evaluation of the effect of oxygen addition on charge carrier transport properties in single-crystal diamond growth

The effects of oxygen addition during single-crystal diamond growth by microwave plasma CVD method on crystal surface morphology and charge carrier transport properties were evaluated. Diamond single-crystals were homoepitaxially grown on (001) surface of high-pressure and high-temperature (HPHT) synthesized type IIa single-crystal diamond substrates with a fixed methane concentration of 1 % and oxygen concentrations of 0–0.8 %. Inverted pyramid-shaped pits were generated as the oxygen concentration increased. The free exciton recombination emission intensity in the cathodoluminescence spectrum reached a maximum at oxygen concentration of 0.5 %. The samples with oxygen concentrations of 0.5 % and 0.8 % showed excellent charge collection efficiency and energy resolution. On the other hand, the mobility-lifetime (μτ) product was only (7.1 ± 1.7) × 10−5 cm2/V, which is approximately 1/4 of that of the sample with 0.2 % methane and no oxygen addition.

Lead-Free Bismuth-Based Perovskite X-ray Detector with High Sensitivity and Low Detection Limit.

Bismuth-based halide perovskites have shown great potential for direct X-ray detection, attributable to their nontoxicity and advantages in detection sensitivity and spatial resolution. However, the practical application of such materials still faces the critical challenge of combining both high sensitivity and low detection limits. Here, we report a new type of zero-dimensional (0D) perovskite (HIS)BiI5 (1, where HIS2+ = histamine) with high sensitivity and a low detection limit. Structurally, the strong N-H···I hydrogen bonds between HIS2+ cations and inorganic frameworks enhance the rigidity of the structure and diminish the intermolecular distance between adjacent inorganic [Bi2I10]4- dimers. By virtue of such structural merits, single crystal 1 exhibits excellent physical properties perpendicular to both the (001) and (010) faces. Perpendicular to the (010) face, 1 exhibited a high electrical resistivity (2.31 × 1011 Ω cm) and a large carrier mobility-lifetime product (μτ) (2.81 × 10-4 cm2 V-1) under X-ray illumination. Benefiting from these superior physical properties, it demonstrates an excellent X-ray detection capability with a sensitivity of approximately 103 μC Gyair-1 cm-2 and a detection limit of 36 nGyair s-1 in both directions perpendicular to the (001) and (010) crystal faces. These results provide a promising candidate material for the development of new, lead-free, high-performance X-ray detectors.

Perovskite intermediate phase FAPbBr3·DMSO assisted in-situ growth of FAPbBr3 polycrystalline wafer for X-ray detection and imaging

Polycrystalline perovskite wafers featured in customizable in dimensions and thickness, represent a frontier in mass production of X-ray detectors. Nevertheless, inherent low crystallinity, elevated defect density, and grain boundaries in polycrystalline wafers typically impair the detection performance. Herein, a novel hot-pressing approach employing the perovskite intermediate phase FAPbBr3·DMSO was demonstrated to improve the quality and X-ray detection performance of polycrystalline perovskite wafers. The in-situ growth of FAPbBr3 wafers were promoted via dimethyl sulfoxide (DMSO) vapor released from the decomposition of FAPbBr3·DMSO phase during the hot-pressing process, resulting in compact morphology, large grain size, superior crystallinity and diminished defect density. The resulted wafers exhibit a high ion activation energy (Ea) of 0.45 eV and a substantial mobility-lifetime product (μτ) of 7.41 × 10−4 cm2 V−1. These advancements equip FAPbBr3 wafer-based detectors with remarkable sensitivity of 3694.6 μC Gyair−1 cm−2, low detection limit (LoD) of 43.8 nGyair s−1, and stable operational performance, comparable to that of single-crystal alternatives. Moreover, the detectors exhibit exceptional X-ray imaging capabilities with a spatial resolution of 4.41 lp mm−1. Thus, the thermally induced decomposition characteristic of perovskite intermediate phase presents a novel avenue for the amelioration of polycrystalline perovskite wafers, heralding a leap forward in X-ray detection performance.

Direct & efficient detection of x-ray radiation using thermally evaporated 2D hybrid lead halide perovskite (BA2PbBr4)(BA=n-Butylammonium=C4H9NH3) film

This report demonstrates fast response and direct detection of x-ray radiation by thermally evaporated 2D hybrid halide perovskite (BA2PbBr4)(n-BA=Butylammonium=C4H9NH3) based film. A highly efficient pin-hole free/compact film (thickness∼1 μm), via a controlled evaporation process, has been grown to fabricate solid-state x-ray radiation detector film (typical dimension ∼1 × 1 cm2) of 2D hybrid halide perovskite BA2PbBr4 ( BAPB) material. Direct detection of x-rays is possible using this detector by simple electrical readout method, where a change in resistance occurs while exposed to x-ray radiation at ambient temperature. The detector current increases when an x-ray impinges on it and exhibits the highest sensitivity ∼1000 μC/Gy/cm2. The detector film shows fast response, exhibiting quick response-recovery time ∼ ms towards x-ray. The detector film exhibits reasonably high dark resistivity ∼ 1010Ω−cm and good mobility-lifetime ( μτ) product 3.308×10−6cm2/s. The 2D hybrid halide perovskite (BA2PbBr4) based detector can sustain an effective high electric field ∼5000 V cm−1 corresponding to 40 V operational bias. It shows very good radiation resistant towards x-ray and retains its crystal structure, as confirmed from structural data under sustained x-ray exposure. The 2D halide perovskite detector (BAPB) shows long-term stability or shelf life (∼4 months) and response is highly repeatable with less than 5% fluctuation, which is an important key performance metric for any radiation detector. This detector has good application potential in several areas like, medical imaging, security checking, etc.

High‐performance 110 kVp hard x‐ray detector based on all‐crystalline‐surface passivated perovskite single crystals

AbstractHalide perovskite single crystals (SCs) have attracted much attention for their application in high‐performance x‐ray detectors owing to their desirable properties, including low defect density, high mobility–lifetime product (μτ), and long carrier diffusion length. However, suppressing the inherent defects in perovskites and overcoming the ion migration primarily caused by these defects remains a challenge. This study proposes a facile process for dipping Cs0.05FA0.9MA0.05PbI3 SCs synthesized by a solution‐based inverse temperature crystallization method into a 2‐phenylethylammonium iodide (PEAI) solution to reduce the number of defects, inhibit ion migration, and increase x‐ray sensitivity. Compared to conventional spin coating, this simple dipping process forms a two‐dimensional PEA2PbI4 layer on all SC surfaces without further treatment, effectively passivating all surfaces of the inherently defective SCs and minimizing ion migration. As a result, the PEAI‐treated perovskite SC‐based x‐ray detector achieves a record x‐ray sensitivity of 1.3 × 105 μC Gyair−1 cm−2 with a bias voltage of 30 V at realistic clinical dose rates of 1–5 mGy s−1 (peak potential of 110 kVp), which is 6 times more sensitive than an untreated SC‐based detector and 3 orders of magnitude more sensitive than a commercial α‐Se‐based detector. Furthermore, the PEAI‐treated‐perovskite SC‐based x‐ray detector exhibits a low detection limit (73 nGy s−1), improved x‐ray response, and clear x‐ray images by a scanning method, highlighting the effectiveness of the PEAI dipping approach for fabricating next‐generation x‐ray detectors.image

Characterization of pure organic NTI crystals for direct x-ray detection

Accurate detection of x-ray radiation is essential for tissue equivalence detection and safety control during medical radiotherapy. Here, a promising radiation detector based on organic 1,8-naphthalimide (C12H7NO2, NTI) single crystals is proposed. NTI single crystals with dimensions of 8 × 2 × 1 mm3 were synthesized by an optimized solvent-cooling method, and the crystal structure was characterized to elucidate the anisotropy mechanism. The coplanar detector made by NTI has a leakage current of less than 0.1 pA at an electric field strength of 1 kV cm−1 and provides excellent detection of 5.49 MeV α-particles (241Am) with a full-energy peak resolution of up to 32.3%. The calculated electron mobility (μe) and electron mobility-lifetime product (μτ)e were 7.9 cm2 V−1s−1 and 1.56 × 10−6 cm2 V−1, respectively. Additionally, the detection limit of the NTI detector was 0.35 µGy s−1 in the electric field strength range of 0.2–1.0 kV cm−1 under a 20 kV x-ray beam with a high sensitivity of 56.2 μC Gy−1cm−2. Consequently, the NTI detector achieves an excellent spatial resolution of 0.8–0.9 lp mm−1 in terms of x-ray imaging capability.

Testing of an organic metal halide perovskite for fast neutron detection

In this work, we synthesized and characterized the Methylhydrazinium Lead Trichloride MHyPbCl3(CH3NH2NH2PbCl3) perovskite as a fast neutron detector. The high hydrogen density of MHyPbCl3 enables efficient energy conversion from a fast neutron into a recoiled proton through the 1H(n,n)1H elastic scattering interaction, thereby, allowing for direct charge detection. Through IV characterization and X-Ray excitation, the crystal demonstrated a high resistivity at 4.43E11Ωcm and a good mobility-lifetime product (μτ) of 9.1E-3 cm2V, respectively, under C60/BCP/Cu and Au contact configuration to form an ohmic-ohmic detector. The crystal showed a good sensitivity to X-rays using an x-ray tube. The feasibility of the direct neutron conversion detector is demonstrated using the fast neutron beam at a Research Reactor. Waveforms from a charge-sensitive pre-amplifier showed distinct radiation-induced pulses from the MHyPbCl3 detector in response to the reactor neutron beam. Using a thermal neutron filter and gamma shielding in the beam, we showed that the pulses produced were more likely from neutron interactions, despite the Pb containing MHyPbCl3 is also sensitive to gamma-rays. With those fast neutron pulses, a post-pulse processing code was used to conduct pulse height analysis (PHA) and reconstruct an energy spectrum.