Μm Emission Of Er3 Research Articles

Photoluminescence properties of erbium doped InGaN epilayers

We report on the photoluminescence properties of erbium (Er) doped InxGa1−xNa epilayers synthesized by metal organic chemical vapor deposition. The crystalline quality and surface morphology of Er doped In0.05Ga0.95N were nearly identical to those of Er doped GaN. The photoluminescence intensity of the 1.54 μm emission in Er doped In0.05Ga0.95N was an order of magnitude lower than in Er doped GaN and decreased with the increase of the In content. The reduction in 1.54 μm emission intensity was accompanied by enhanced emission intensities of deep level impurity transition lines.

The origin of spectral broadening of 1.53 μm emission in Er 3+-doped zinc tellurite glass

The emission spectra of the lasing transition 4I 13/2→ 4I 15/2 in Er 3+-doped TeO 2–ZnO binary glass have been studied. The influence of the concentration of Er 2O 3 and sample-thickness on the line-shape of this electron transition has been analyzed. The investigation includes Raman scattering spectroscopy as well as optical absorption and photoluminescence. It was observed that the increasing of Er 3+ ion concentration, in the 0.2–4 mol% range, results in a structural changes and a significant spectral broadening of the 1.53 μm emission band. Reabsorption has been evoked as a main mechanism to explain the broadening of the 4I 13/2→ 4I 15/2 emission line.

Spectral broadening and luminescence quenching of 1.53 μm emission in Er 3+-doped zinc tellurite glass

The emission spectra and the lifetime of the lasing transition 4I 13/2→ 4I 15/2 in Er 3+-doped TeO 2-ZnO binary glass have been studied. The investigation includes Raman scattering spectroscopy as well as optical absorption, luminescence, and lifetime measurements techniques. The influence of erbium concentration on the line-shape of this electron transition has been analyzed. It was observed that the increasing of Er 3+ ion concentration, in the 0.2–4 mol% range, results in a structural changes and a significant spectral broadening of the 1.53 μm emission band. Reabsorption has been evoked to explain the broadening of the 4I 13/2→ 4I 15/2 emission line. In the paper, is also reported the effect of the erbium content on the emission intensity of the 4I 13/2→ 4I 15/2 transition as well as on the lifetime of the 4I 13/2 level. Based on the electrical–dipole interaction theory, the luminescence concentration quenching mechanism by hydroxyl groups is analyzed. The data suggest that <10% of hydroxyl groups are coupled to erbium ions in the zinc tellurite glass network.

Infrared luminescence of transparent glass ceramic containing Er3+:NaYF4 nanocrystals

Abstract The 1.53 μm emission of Er 3+ -doped transparent glass ceramics containing NaYF 4 nanocrystals is investigated systematically. The appearance of Stark splits in the absorption and emission peaks of the glass ceramics confirms the incorporation of Er 3+ into NaYF 4 nanocrystals. With the raising of heating temperature for NaYF 4 crystallization, the 4 I 13/2 level lifetime increases due to the incorporation of more Er 3+ into NaYF 4 , while the 1.53 μm emission bandwidth decreases resulting from the structural ordering around Er 3+ . With the increase of Er 3+ content, the obvious concentration quenching effect is observed in glass ceramics. The present glass ceramic possesses large 1.53 μm emission cross-section and high quantum efficiency, which implies that it is potentially applicable in Er 3+ -doped fiber amplifiers.

Excitation dynamics of the 1.54μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition

The authors report on the excitation dynamics of the photoluminescence (PL) emission of Er doped GaN thin films synthesized by metal organic chemical vapor deposition. Using the frequency tripled output from a Ti:sapphire laser, the authors obtained PL spectra covering the ultraviolet (UV) to the infrared regions. In the UV, a dominant band edge emission at 3.23eV was observed at room temperature; this is redshifted by 0.19eV from the band edge emission of undoped GaN. An activation energy of 191meV was obtained from the thermal quenching of the integrated intensity of the 1.54μm emission line. This value coincides with the redshift of the band edge emission and is assigned to the ErGa-VN complex level.

Improvement of Er 3+ emissions in oxyfluoride glass ceramic nano-composite by thermal treatment

In order to improve the 1.53 μm emission of Er 3+-doped oxyfluoride glass ceramic containing CaF 2 nano-crystals, series of samples with same Er 3+ doping lever thermal treated under different conditions were prepared. The UV-VIR-NIR absorption spectra, near-infrared and up-conversion emission spectra, and 4 I 13/2 decay curves were measured. Based on Judd–Ofelt theory, the radiative transition probability, fluorescence branching ratio and radiative decay time of various metastable transitions of precursor glass and glass ceramics were evaluated. With the increasing of heating temperature, the Judd–Ofelt intensity parameter Ω 2 monotonously decreased from 4.39×10 −20 to 2.72×10 −20 cm 2; the emission lifetime and quantum efficiency significantly increased from 5.9 to 8.0 ms and 70% to 98%, respectively. The wavelength dependence of gain cross-sections of oxyfluoride glass and glass ceramics were computed to be relatively flat in the range of 1530–1565 nm for population inversion from 0.7 to 1.0.

Enhancement of photoluminescence from Yb and Er co-doped Al2O3 films by an asymmetric metal cavity

The effects of Au thin layers on luminescence properties of Er and Yb co-doped Al2O3 films were studied. The 1.54μm emission of Er3+ excited by the energy transfer from Yb3+ is found to be strongly enhanced by placing a Au layer on top of the films. Photoluminescence excitation spectra of the 1.54μm PL of Er3+ and time transients of the 980nm emission of Yb3+ revealed that PL enhancement arises from two different mechanisms. The first one is the enhancement of local electric fields accompanied by the excitation of surface plasmons of rough Au surfaces. The other one is the enhancement of energy transfer rate from Yb3+ to Er3+ caused by the modification of the local photonic mode density at the position of the Yb–Er coupled system.

Crystal growth, optical and spectroscopic characterisation of monoclinic KY(WO4)2 co-doped with Er3+ and Yb3+

Abstract We grew un-doped KY(WO 4 ) 2 (hereafter KYW), Er 3+ and Yb 3+ single-doped KYW and Er 3+ , Yb 3+ co-doped KYW single crystals at several dopant concentrations by the Top-Seeded Solution Growth slow-cooling method (TSSG). We studied several optical properties of the host (the transparency window, the orientation of the principal optical axes and the measurement of the refractive indices as a function of the wavelength). We also analysed the spectroscopy of Er 3+ and Yb 3+ ions in KYW in terms of the optical absorption at room temperature (RT) and at low temperature (6 K), and the luminescence at RT and 10 K in the 1425–1650 nm range corresponding to the 1.5 μm emission of Er 3+ ( 4 I 13/2 → 4 I 15/2 transition), after pumping at 981 nm (overlap in energy between 4 I 11/2 and 2 F 5/2 levels of Er 3+ and Yb 3+ , respectively) and at 798 nm ( 4 I 9/2 level of Er 3+ ). Luminescence was studied in terms of optical emission and lifetimes measurements.

Strong near-infrared photoluminescence in erbium/ytterbium codoped porous silicon

Erbium ions and ytterbium ions (1021∕cm3) were electrochemically codoped into porous silicon. When compared with the Er-doped porous silicon we found two salient features in its photoluminescence. One is that the 1.54μm emission of Er3+ ions was 50 times stronger under 980nm laser excitation at room temperature. This is due to the high efficiency of the Yb3+→Er3+ energy transfer. The other is that the photoluminescence intensity increases rapidly with temperature, while that in Er-doped porous silicon decreases monotonically with temperature. Our results show that the codoped Er∕Yb porous silicon has a promising potential for the application in optical communications.

Fabrication and emission properties of Er 3+/Yb 3+ codoped tellurite glass fiber for broadband optical amplification

Tellurite glass is proposed as a host for broadband erbium-doped fiber amplifiers because of their excellent optical and chemical properties. A new single mode Er 3+/Yb 3+ codoped tellurite fiber with D-shape cladding geometry is fabricated in this work. When pumped at 980 nm, a broad erbium amplified spontaneous emission (ASE) nearly 100 nm in the wavelength range of 1450–1650 nm around 1.53 μm is observed. It was found that the emission spectrum from erbium in tellurite glass fibers is almost twice as broad as the corresponding spectrum in tellurite bulk glass. The changes in ASE with regard to fiber lengths and pumping power were measured and discussed. The output of about 2.3 mW from Er 3+/Yb 3+ codoped tellurite fiber ASE source is obtained under the pump power of 700 mW. The broad 1.53 μm emission of Er 3+ in Er 3+ /Yb 3+ codoped tellurite glass fiber can be used as host material for potential broadband optical amplifier and tunable fiber lasers.

Fabrication and amplified spontaneous emission spectrum of Er 3+-doped tellurite glass fiber with D-shape cladding

Tellurite glass is proposed as a host for broadband erbium-doped fiber amplifiers because of their excellent optical and chemical properties. A single-mode Er 3+-doped tellurite glass fiber with D-shape cladding was fabricated in this work. The characterization of amplified spontaneous emission (ASE) from this newly fabricated Er 3+-doped tellurite fibers are exhibited. When pumped at 980 nm, a very broad erbium ASE nearly 150 nm around 1.53 μm is observed. The changes in ASE with regard to fiber lengths and pumping power were measured and discussed. The output of 2 mW from Er 3+-doped tellurite fiber ASE source was obtained under the pump power of 660 mW. The broad 1.53 μm emission of Er 3+ in tellurite glass fiber can be used as host material for potential broadband optical amplifier and tunable fiber lasers.

Broad-band 1.5 μm emission of Er 3+ ions in bismuth-based oxide glasses for potential WDM amplifier

Erbium-doped glasses showing the widest 1.5 μm emission band are reported in a novel oxide system Bi 2O 3–B 2O 3–SiO 2 and their optical properties such as absorption, emission spectra, cross sections, the Judd–Ofelt parameters and fluorescence lifetime were investigated. The broad and flat 4 I 13/2− 4 I 15/2 emission of Er 3+ ions around 1.5–1.6 μm can be used as an excellent optical amplifier for the wavelength-division-multiplexing (WDM) network system. Among three Judd–Ofelt intensity parameters of Er 3+ ions, the Ω 6 showed very large value in these glasses compared with other oxide and fluoride glasses ever reported. The cross section of the 1.5 μm transition was quite large due to a large refractive index of the host. With increasing B 2O 3 content in the glass composition, the bandwidth increased, while the lifetime of the 4 I 13/2 level decreased. A strong correlation was found between the bandwidth, spontaneous emission probability and the value of the Ω 6 parameter. These optical characteristics were discussed combined with local environment of Er 3+ ions in these novel glasses.

Auger de-excitation of the 1.54 μm emission of Er- and O-implanted silicon

This paper describes the Auger de-excitation of the Er 3+-related 1.54 μm luminescence of Er and O coimplanted silicon. Time response of the Er-related 1.54 μm emission to 0.3 ns wide light pulses of the 337 nm N 2 laser line is measured under CW illumination of the Ar ion laser 488 nm line. O coimplantation is found to produce new Si:Er–O luminescence centers which illuminate at the same wavelength as Si:Er, but with a much shorter fluorescence lifetime. The time response of the Si:Er–O luminescence is found to be very sensitive to the Ar 488 nm CW illumination. Both the intensity and the fluorescence lifetime decrease rapidly with increase of the CW light intensity. The Auger coefficient of Er–O centers obtained is about ten times larger with respect to Si:Er.

Spectral properties of Er 3+-doped gallium lanthanum sulphide glass

The spectral properties of chalcogenide glass 0.7Ga 2S 3:0.3La 2S 3 (Ga:La:S) doped with Er 3+ are presented and discussed. Emission and absorption spectra and lifetimes of energy levels have been measured. The 2.7 μm emission of Er 3+ has been observed from chalcogenide glass for the first time. Radiative and non-radiative transition rates are calculated and compared with the measured lifetimes of interesting energy levels. Comparing this glass with Er 3+-doped silica glasses, it is shown that the absorption and emission cross-sections of Er 3+-doped Ga:La:S are around 2.5 times higher, radiative transition rates are around five times higher due to its higher refractive index, while multiphonon non-radiative decay rates are around three orders lower due to its much lower phonon energy. Furthermore, the inverse energy transfer process in Er 3+:Ga:La:S glass may have significant implications for the operation of Er 3+:Ga:La:S devices. These spectral properties, along with the higher solubility for rare earth-ions in Ga:La:S, make this glass a good candidate for new applications.

Quantum efficiency of 1.5 µm emission of Er3+ in ZBLAN and BIGaZYT fluoride glasses and in silica glass obtained by photoacoustic spectroscopy

In this work we present a comparison of the quantum efficiencies (QE) of the 411312+ 411512 transition of Er3+ in ZBLAN (58 ZrF4-18 BaF2-5.5 LaF3-3 A1F3-15 NaF), BIGaZYT (30 Be2-18 InF3-20 ZnF2-10 YF3-10 ThF4-12 GaF3), and silica (67.7 Si02-16.2 SiO-11.1 Ca0-5 A1203) glasses obtained by photoacoustic spectroscopy. In the case of ZBLAN and BIGaZYT glasses, the method takes into account the 4111, + 4F712 excited state absorption.

Enhanced 1.54 μm emission of erbium implanted silicon

A new way of overcoming the limited solid solubility of erbium in crystalline silicon, which severely affects the luminescence efficiency of erbium implanted materials, is reported. The enhanced 1.54 μm emission of Er 3+ in Si is obtained from samples using erbium implanted into a silicon-on-insulator structure.

Concentration effects on the up-conversion from the [formula omitted] level of Er 3+ in YAG

A quantitative study of the up-conversion process ( 4I 13 2 → 4I 15 2 ) + ( 4I 13 2 → 4I 9 2 → 4 I case11 2 ) , essential in the 3 μm emission of Er 3+ in YAG, over a large concentration range (0.1 to 100 at% Er 3+) and pumping energy has been performed. The concentration and sample dependence of the “intrinsic” lifetime of 4I 13 2 and 4I 13 2 laser levels is tentatively explained by energy transfer to aleatory impurities. The quadratic concentration dependence of the up-conversion parameter, obtained experimentally, and the possibility to describe the up-conversion process by rate equations are explained by large migration effects and effective interactions between nearest neighbours.