Abstract
A new way of overcoming the limited solid solubility of erbium in crystalline silicon, which severely affects the luminescence efficiency of erbium implanted materials, is reported. The enhanced 1.54 μm emission of Er 3+ in Si is obtained from samples using erbium implanted into a silicon-on-insulator structure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
