Microwave Electronic Devices Research Articles

Dual-Circularly Polarized and Flexible Metasurface Antenna Based on Graphene Assembled Film for Satellite Communications.

Traditional metal materials used in electronic devices are often problematic due to issues like bending resistance, oxidation leading to failure, and environmental pollution. To address these challenges, microwave electronic devices are constantly casting around for metal substitute materials with additional characteristics such as flexibility, anticorrosive, and eco-friendly. However, finding suitable materials that are accessible for radiofrequency (RF) applications is a difficult yet promising task. Consequently, a high-performance metasurface antenna based on highly conductive graphene films for satellite communications is developed in this paper. The proposed graphene assembled films (GAFs) have a conductivity of up to 1.13 × 106 S/m. Simulation and measurement results confirm the excellent performance of the designed antenna. Comparative experiments are also conducted on salt spray and mechanical bending between GAF antenna patterns and copper foil counterparts, further demonstrating the outstanding flexible property and corrosion resistance performance of prepared GAFs.

Excitation Equations for Longitudinally-Azimutally Irregular Waveguides Taking into Account the Finite of the Walls Conductivity

Excitation equations for longitudinal-azimuthally irregular waveguides are formulated taking into account losses in the walls. The inner surface of the waveguide walls is given by an arbitrary smooth function b(ϕ, z). The coordinate transformation method replaces the original cylindrical coordinate system r, ϕ, z with a new one ρ, ϕ, z, where ρ = r/(b(ϕ, z)). The new system defines the waveguide boundary as ρ = 1 = const, i. e. the waveguide geometry transforms as a regular cylinder. Taking these functions into account, the standard procedure of the incomplete Galerkin method is used to determine the amplitudes of partial waves. The resulting general equations can be used in the calculation and optimization of both microwave and EHF electronic devices of various types, as well as passive microwave devices of various applications.

Investigation of the effect of different types of SiN layers and cap-GaN on the surface electronic states of AlGaN/GaN heterostructures with 2DEG using X-ray and UV photoelectron spectroscopy

Determining the effect of different crystalline and amorphous passivation layers on the electronic states and surface properties of III-nitride heterostructures is an important task from the point of view of improving the performance of modern microwave and power electronic devices. In the present work the effect of in situ deposited gallium nitride and silicon nitride passivation layers on the surface electronic states of AlGaN/GaN heterostructures with a two-dimensional electron gas is investigated using the X-ray, ultraviolet and angle-resolved ultraviolet photoelectron spectroscopy (XPS, UPS, ARUPS) techniques. A thorough analysis of the experimental UPS spectra was carried out, the primary photoelectrons were extracted from the experimental spectra and the contribution of the electron states on the surface in the energy range of the AlGaN bandgap was identified. It was found that the density of states on the surface decreases by about an order of magnitude in the AlGaN bandgap during the formation of a silicon nitride layer. For the first time, it was found that a significant decrease in the density of surface states (up to a factor of 6) is observed even at extremely low thickness of the SiN ordered layer formation with the (√3 × √3)R30° superstructure.

Zinc- doped nickel ferrite nanoparticles for ESR, hyperhtermia and thier cytotoxicity in mouse muscle fibroblast (BLO-11) and human breast cancer (MDA-MB-231) cell lines

Spinel structured nickel ferrite (NiFe2O4) nanoparticles (NPs) are used in catalysis, magnetic, and microwave electronic devices. To study the magnetic interplay between half and above-filled d-orbitals in spinel structured transition metal cations: Fe3+ (3d5), Ni2+ (3d8), and Zn2+ (3d10), narrow size distributed, well crystallined zinc substituted NiFe2O4 magnetic nanoparticles (MNPs) were synthesized by solvothermal reflux method. Structural, morphological, magnetic, magnetic hyperthermia, and cytotoxicity properties of Zn0.15Ni0.85Fe2O4 (code: ZN1), Zn0.35Ni0.65Fe2O4 (code: ZN2), and Zn0.45Ni0.55Fe2O4 (code: ZN3) NPs were systematically studied. Both X-ray diffraction and electron diffraction profiles confirmed that all synthesized samples were crystallined in a cubic spinel structure. Further, the formation of octahedral and tetrahedral ligands in spinel structure is confirmed by Fourier transformed infrared (FTIR) spectra. In addition, metal cations and oxygen anions oxidation states were determined from X-ray photoelectron spectroscopy (XPS). Quantification of metal cations present in all samples was done by X-ray energy dispersive spectra. Macroscopic magnetic properties of NPs were studied by magnetometer and microscopic magnetic properties were studied by electron spin resonance (ESR) spectra. Superparamagnetic hyperthermia (SPMH) properties of NPs were studied by adiabatic hyperthermia curves using an induction heater. Biocompatibility properties of all NPs were studied by cell viability-based cytotoxicity assay on (BLO-11) mouse muscle fibroblast and (MDA-MB-231) human breast cancer cell lines. The above studies revealed that Zn2+ substitution initially enhances saturation mass magnetization (Ms) of NiFe2O4 and then reduces Ms when Zn2+ concentration is> 30 % due to zero octahedral site preference energy of Zn2+ and reduced superexchange strength in octahedral sublattice. This influences magnetic hyperthermia and cytotoxicity properties of NPs and is described here.

Molecular dynamics simulations of GaAs crystal growth under different strains

The high-quality growth of GaAs crystals is extremely essential for the fabrication of high-performance high-frequency microwave electronic devices and light-emitting devices. In this work, the molecular dynamics (MD) simulation is used to simulate the induced crystallization of GaAs crystal along the [110] orientation. The effects of strain on the growth process and defect formation are analyzed by the largest standard cluster analysis, the pair distribution function, and visualization analysis. The results indicate that the crystallization process of GaAs crystal changes significantly under different strain conditions. At the initial stage, the crystal growth rate of the system decreases after a certain tensile strain and a large compressive strain have been applied, and the greater the strain, the lower the crystallization rate is. In addition, as the crystal grows, the system forms a zigzag interface bounded by the {111} facet, and the angle between the growth plane and the {111} facet affects the morphology of the solid-liquid interface and further affects the formation of twins. The larger the applied tensile strain and the smaller the angle, the more twin defects will form and the more irregular they will be. At the same time, a large proportion of the dislocations in the system is associated with twins. The application of strain can either inhibit or promote the nucleation of dislocations, and under an appropriate amount of strain size, crystals without dislocations can even grow. The study of the microstructural evolution of GaAs on an atomic scale provides a reference for crystal growth theory.

Novel Tri-rutile Ni0.5Ti0.5TaO4 Microwave Dielectric Ceramics: Crystal Structure Chemistry, Raman Vibration Mode, and Chemical Bond Characteristic In-Depth Studies

Here, a novel tri-rutile Ni0.5Ti0.5TaO4 ceramic configuration was first reported, and the sintering features, chemical bond theory, and microwave dielectric properties were systematically explored. Pure Ni0.5Ti0.5TaO4 ceramic with a tri-rutile structure was well sintered at 1275 °C with excellent microwave performance: εr ∼33.06, Q × f ∼14,600 GHz, and τf ∼93.95 ppm/°C. Based on the P–V–L theory, the dielectric constant was mainly affected by the formation of Ta–O bonds (∼62%) due to the larger ionic polarization and bond susceptibility. The experimental dielectric constant (33.06) was comparable to the theoretical calculation (P–V–L: 35.11). The lattice energy was also dominated by the Ta–O bond (∼71%) and the intrinsic loss properties. The τf was also affected by the [M1/M2O6] octahedral distortion. In addition, the relative density, grain size, and packing fraction also played a certain role in the microwave dielectric properties. Insights from the Raman spectroscopy revealed that the A1g mode dominated the Raman vibration at 699.44 cm–1. These results were helpful to provide ideas for novel medium dielectric constant materials and contributed to the miniaturization of microwave electronic devices.

Analysis of electromagnetic properties of Ce–Zn substituted barium hexaferrite for electronic circuit applications

Electromagnetic properties of Ce–Zn substituted barium hexaferrite (Ba0.5Ce0.5ZnFe11O19 ferrite) synthesized using ceramic technique were analyzed in detail in the X band frequencies to describe its response to microwave absorber and microwave electronic device applications. The phase formations, structural morphology, polarization mechanisms and magnetic properties for Ba0.5Ce0.5ZnFe11O19 ferrite, which provide important information about electrical load transmission mechanism were analyzed using X-ray diffraction, scanning electron microscopy, two-port vector network analyser and vibrating sample magnetometer techniques, respectively. The experimental complex dielectric plane plots (Cole-Cole plots) of the Ba0.5Ce0.5ZnFe11O19 ferrite represent an equivalent RC circuit corresponding to the impedance circuit in the Smith Chart. The reflection loss increased to the highest value (−17.04 dB) depending on the amount of Ce in the structure of the Ba0.5Ce0.5ZnFe11O19 ferrite and the bandwidth, which is important for microwave absorbers, increases.

Low dielectric loss ceramics in the Mg4Nb2O9-ZnAl2O4-TiO2 ternary system

This study used a traditional solid-state reaction method to prepare a series of composite ceramics in the 0.7Mg4Nb2O9-(0.3-x)ZnAl2O4-xTiO2 ternary system. Crystalline phases and microstructure of Mg4Nb2O9-ZnAl2O4-TiO2 dielectric ceramic composites were investigated and correlated with the relevant dielectric properties. It was observed that the addition of Ti4+ substituted Nb5+ in the Mg4Nb2O9 structure, which promoted the decomposition of Mg4Nb2O9 to form the second phase, Mg5Nb4O15, during sintering. The synergistic effect of ZnAl2O4-TiO2 co-doping promoted the Mg4Nb2O9 ceramic densification. The sample (0.7Mg4Nb2O9-(0.3-x)ZnAl2O4-xTiO2) with x = 0.15−0.2 exhibited dielectric constants of 13–14, larger than those of ZnAl2O4, Mg4Nb2O9 and Mg5Nb4O15, due to the NbO6 octahedra distortion resulting from the substitution of Al3+/Ti4+ for Nb5+ in Mg4Nb2O9 and Mg5Nb4O15. The long-range order of the NbO6 octahedra was enhanced by co-doping ZnAl2O4 and TiO2, thereby enhancing the Qxf value. A dielectric constant of 13.1, Qxf value of 366,000 GHz and a τf of −60.8 ppm/°C were obtained from 1300 °C sintered 0.7Mg4Nb2O9-0.15ZnAl2O4-0.15TiO2. These results show that 0.7Mg4Nb2O9-0.15 ZnAl2O4-0.15TiO2 ceramic is a good candidate for microwave electronic device applications.

A novel low-loss microwave dielectric ceramic Ba16ZrNb12O48

A novel Ba16ZrNb12O48 ceramic is synthesized by a solid-state sintering method. The phase composition, microstructure, infrared reflectivity spectrum and microwave dielectric properties of Ba16ZrNb12O48 ceramic sintered at 1400−1500℃ are investigated. The differential scanning calorimetry and X-ray diffraction analysis indicate that Ba16ZrNb12O48 crystallizes in the hexagonal perovskite structure with space group R-3 m at 1250℃. As the temperature increases, the permittivity and Q × f value exhibit a strong relevance to the relative density. The satisfactory microwave dielectric properties of εr = 36.85, Q × f = 57,000 GHz (at f = 6.50 GHz), and τf = 48 ppm/℃ are obtained when the specimen is sintered at 1450℃, which renders Ba16ZrNb12O48 a potential candidate for microwave electronic devices.

A novel low-loss Ba12InNb9O36 microwave dielectric ceramic with 18-layer hexagonal perovskite structure

A novel Ba12InNb9O36 microwave dielectric ceramic is prepared by a solid-state reaction method. Rietveld refinement and transmission electron microscopy confirm that Ba12InNb9O36 crystallizes as an 18-layer hexagonal perovskite structure with a stacking sequence (cccchh)3 for the BaO3 layers. A dense and compact microstructure is observed for the Ba12InNb9O36 ceramic, when sintered at 1470 °C, with an optimal relative density of 96.84 %. The intrinsic dielectric constant and dielectric loss are investigated based on the infrared reflectivity spectrum. The microwave dielectric properties of εr = 36.12, Q × f = 57,250 GHz (at f = 6.24 GHz), and τf = 17.58 ppm/°C are obtained, rendering Ba12InNb9O36 ceramic a promising candidate material for microwave electronic devices.

Анализ методов измерения диэлектрических свойств материалов в СВЧ диапазоне длин волн.

One of the modern trends in the development of communication systems, information and telecommunication systems, air traffic control systems, etc. is the transition and development of higher-frequency wavelength ranges. In this regard more and more stringent requirements (in terms of spectrum, out-of-band and spurious radio emission, and in the shape of the output signal) are imposed on radio engineering devices that transmit and receive microwave radio signals. As a result, the requirements for the design and functional features of microwave electronic devices are increasing. One of these requirements is to assess the degree of compliance with the required values of dielectric properties of materials used in the design of microwave electronic devices. This requirement is justified by the fact that the electrical parameters of such microwave devices as: strip filters, power dividers, printed antennas and others, directly depend on the dielectric properties of the materials used in their substrate designs. In this regard, three main methods have now emerged for assessing the dielectric properties of materials: the resonant method, the non-resonant method, and the free space method. Aim. The aim of this article is to carry out a comparative analysis of the known methods for measuring the dielectric properties of materials in the microwave range of wavelengths and devices for their implementation. Materials and methods. The authors of the article reviewed the scientific literature of domestic and foreign publications. Results. For each of the methods for measuring the dielectric properties of materials, their main idea, practical implementation, a mathematical model for processing experimental data and areas of application are given. The advantages and disadvantages for each of the methods for measuring the dielectric properties of materials are given too. Conclusion. The applicability of each of the considered methods depends on such factors as: the shape of the investigated dielectric material, its state of aggregation, the possibility of measuring amplitude or complex transmission and reflection coefficients, the presence of an anechoic chamber, etc.

Specific Features of Volume-modular Technology Application in the Design of Microwave Electronic Devices

State of problem. Today a significant part of passive microwave electronic devices is implemented in the form of single-layer structures. In some cases, such approach leads to an increase in the overall dimension’s characteristics of electronic equipment. Moreover, the application of single-layer microwave boards leads to the complexity of replacing individual functional units. Therefore, the replacement of the entire microwave board is required to improve any of its functional part. It is nonprofit economically and inefficient technologically. Significant progress in eliminating the above-mentioned disadvantages may be achieved by the application of volume-modular technology of design microwave electronic devices. Purpose. The purpose of the research is to present a brief overview of the features of the application of volume-modular technology in the design of microwave electronic devices of modern radio-electronic equipment. The volume-modular way of implementing microwave devices is described. It allows improving their weight and overall dimension characteristics and at the same time maintaining and increasing their functionality. The basic principles of design of volume modular microwave electronic devices are formulated. The results of numerical simulation of the electrodynamics characteristics of a strip-slot transition are presented. The method for quantitative assessment of the influence of volume-modular technology on the weight and dimensions characteristics of microwave electronic devices is considered. The main advantages and disadvantages of volume-modular technology are listed. Results. We demonstrate a possibility of reducing the overall dimensions characteristics of passive microwave electronic devices by more than 10 times while maintaining their electrical parameters. Each component is presented in the form of a structurally separate and complete board with unified overall and connecting dimensions. The standard electromagnetic coupling between functional parts makes it possible to assemble microwave electronic devices with specified electrodynamics characteristics from the base elements.

Effect of sintering temperature on the structural, morphological, electrical, and magnetic properties of Ni–Cu–Zn and Ni–Cu–Zn–Sc ferrites

Polycrystalline Ni0.3Cu0.2Zn0.5Fe2O4 and Ni0.3Cu0.2Zn0.5Sc0.05Fe1.95O4 compounds have been prepared by standard solid-state reaction technique and sintered at 1000, 1100, 1150, 1200, and 1250 °C for 5 h in air. The effect of sintering temperature on the structural, morphological, magnetic, dielectric, and electrical properties of these spinel ferrites has been studied thoroughly and comparatively. Formation of the single-phase cubic spinel structure of these compositions is confirmed by X-ray diffraction analysis. The lattice constant increases with sintering temperature as well as with 5% scandium (Sc3+) doping in Ni–Cu–Zn ferrite. Surface morphology reveals that the grain size increases with sintering temperature. Among the prepared ferrites, Ni0.3Cu0.2Zn0.5Sc0.05Fe1.95O4 has the maximum density (5.05 × 103 kg/m3) at sintering temperature 1150 °C, which gives the highest value of initial permeability. It is observed that initial permeability varies with sintering temperature, and it gives the maximum value at optimum sintering temperature. It is noted that Curie temperature decreases with 5% Sc3+ ions doping, whereas it slightly increases with increasing sintering temperature for both compositions. Ni0.3Cu0.2Zn0.5Fe2O4 compound shows the highest Curie temperature 418 °C. Dielectric constant, dielectric loss factor and AC electrical conductivity decrease with 5% Sc3+ ions doping in Ni–Cu–Zn ferrite. The initial permeability decreases sharply at Curie temperature, which indicates a high degree of compositional homogeneity. The ‘Hopkinson’ peak is observed just below the Curie temperature in the real part of initial permeability versus temperature graphs. The mechanism of dielectric polarization and electrical conductivity has been explained based on the electron hopping between Fe3+ and Fe2+ ions. The variation trend of complex impedance and AC electrical conductivity reveals the semiconducting behavior of the ferrite samples. Formation of partial semicircles in the Z/-axis indicates that relaxation process is non-Debye type. The investigated ferrites show relatively high initial permeability, low magnetic loss, and low electrical conductivity in a wide frequency range, which make them potential candidate for various practical applications such as small and compact power suppliers for computers, microprocessors, microwave electronic devices, etc.

Development of Electrodynamic Components for Microwave Electronic Devices Using the Technology of 3D Photopolymer Printing with Chemical Surface Metallization

We study the possibility of using the technology of 3D photopolymer printing with subsequent metallization of working surfaces for developing electrodynamic components of microwave devices. The technology applicability is considered by examples of mockups of a profiled helical waveguide for a microwave undulator of a Compton free-electron laser and a periodic slow-wave system of a backward-wave oscillator with a ribbon electron beam. The results of “cold” measurements of the parameters of these electrodynamic systems are presented and good agreement with the simulation results is obtained, which confirms the prospects of using additive technologies for developing components of the vacuum microwave electronic devices.

Structure and magnetic properties of In-substituted MgCd ferrite material

In this paper, low temperature co-fired In-substituted MgCd ferrites (Mg0.8Cd0.2Fe2-xInxO4, x = 0.00, 0.05, 0.10, 0.15) were synthesized by traditional solid state method. XRD showed that In3+ ion not changed phase formation in low doped content. Grain size had obvious changes due to In3+ ions. Under In3+ ion doping, magnetic hysteresis loops showed both saturation magnetization (Ms) first increased and then decreased, and the maximum value was 33.2 emu g−1 (x = 0.10). Coercivity (Hc) decreased first to minimum value(51.99 Oe @x = 0.10) and then increased. The ferromagnetic resonance (FMR) linewidth (ΔH) of samples were tested at 9.56 GHz, and the results showed that the low FMR linewidth was 219.7 Oe when In-doped content was 0.10. the excellent magnetic properties (ΔH, 219.7 Oe @9.56 GHz, Ms, 33.2 emu g−1, Hc, 51.99 Oe) showed that the materials have potential for use in high frequency self-biased microwave electronic devices such as phase shifter or circulators.

Gyroton with the Corrugated Resonator

A new type of high-power electronic device—a gyroton with a corrugated resonator—is described and investigated. Spatial bunching of the electron beam does not occur in this device, however, highly efficient electron beam power conversion into the rotating electromagnetic field power is possible. The rectilinear electron beam deviates from the axis by the slow TM11 wave, then it gives up longitudinal energy to the same wave with more than 78% efficiency, and an output power up to 30 MW. The developed mathematical model of the interaction of the relativistic electron beam with an irregular circular waveguide and resonator fields presented in this article can be used to calculate and optimize the processes occurring in various microwave electronic devices, such as gyrotrons, gyrotons, TWT, Gyro-TWT, and BWT.

EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES

The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors. As the experimental techniques, the electrochemical capacitance-voltage (ECV) profiling and other methods of admittance spectroscopy are applied. Modernization of commercial ECV-profiling setup allows observing for the first time the concentration peak from a near-surface delta-layer of pHEMT heterostructures together with the enrichment peak from the quantum well. In order to optimize the etching speed the crater bottom control is performed by means of AFM. The electrolyte-semiconductor contact capacitance is measured with Agilent RLC-meter. The main theoretical technique used in the research is numerical modeling of nanoheterostructure key electronic features by self-consistent solution of Schrödinger and Poisson equations. The potential line-up for the conduction band bottom is obtained, and the quantized energy levels are calculated. The complex analysis of series of samples is carried out in order to understand the influence of delta-layer position on the level depth and at the carrier concentration. The optimum distance between QW and delta-layer providing the most efficient charge carrier delivery to quantum well is found. The performed research is aimed at improvement of microwave electronic devices allowing increase of the gain coefficient and the transfer characteristic of SHF-transistors.

Wave absorption control in the new designed photonic metamaterials with artificial opal

Photonic metamaterials consisting of artificial opal with magnetic inclusions were considered, used in controllable microwave electronic devices. The analyzed structures consist of matrices of SiO2 nanospheres (diameter 200 - 400 nm) with included clusters of ferrite spinels (MnxCo0.6-xZn0.4Fe2O4, NixCo0.6-xZn0.4Fe2O4, LaxCo0.6-xZn0.4Fe2O4, NdxCo0.6-xZn0.4Fe2O4) in interspherical nanospacing (4 ÷ 7% concentration). The ellipsoidal clusters are polycrystalline, with spatial dimensions of 20 – 30 nm and grains of 5 – 12 nm. A controlled wave absorption was obtained in these high inductivity structures. Evolution of the wave attenuation coefficient, α[dB/m], in function of the applied magnetic field and particle inclusion size, for different content of the magnetic ions in the ferrite inclusion, have been determined at frequencies around the samples ferromagnetic resonance, by structural simulation. The test configuration was: sample inside the rectangular waveguide, mode TE10, in the frequency range 24 ÷ 40 GHz. The polarizing magnetic field for the ferrites was tested in the range of 0 ÷ 20 kOe and minimized by modifying the structure. The metamaterial design optimization was realized, controllable by different parameters at structure level. The ferromagnetic resonance influence on the control process was pointed out and also the particular results and effects which can be induced by the resonant behavior.

Structural characteristics and microwave dielectric properties of a new Sm2O3-Nd2O3-MgO-CeO2 ceramic system

Sm2O3-Nd2O3-MgO-CeO2 ceramic systems of the form Sm1-xNdx(Mg0.5Ce0.5)O3 (0.0 ≤ x ≤ 1.0) were synthesized by a conventional solid-state reaction method, and the phase structural characteristics, microstructures, sintering behaviors and microwave dielectric properties were investigated systematically. X-ray diffraction analyses revealed that a cubic fluorite-type structure with Fm-3m (225) space group was identified as the main crystalline phase in the composition range of x = 0.0–1.0, while some secondary phases were also detected in all the Sm1-xNdx(Mg0.5Ce0.5)O3 samples. The phase structural characteristics of Sm2O3-Nd2O3-MgO-CeO2 quaternary ceramic systems were significantly affected by a certain amount of Mg2+ ion volatilization, detected by the typical EDS data. Additionally, both an example of EDS analysis in the second phases regions and some details of the diffraction peaks implied that the unknown phases were mainly composed of MgO phase. Furthermore, for the microwave characteristics, the relative permittivity (εr) was closely related to the dense degree and phase compositions, and also, the quality factor (Q × f) had been strongly depended on the compactness and lattice defects in these investigated ceramics. Wherein, after sintering at 1450 °C for 4 h, the x = 0.0 sample demonstrated the excellent microwave dielectric performance: εr ∼16.6, Q × f ∼111,280 GHz (at 7.938 GHz) and τf ∼ −56.7 ppm/°C. These results also indicated that the Ce1-xLnxO2-δ (Ln = Sm and Nd) solid solutions could be a good candidate for dielectric resonators, filters and other microwave electronic device applications.

High quality factor microwave dielectric ceramics in the (Mg1/3Nb2/3)O2–ZrO2–TiO2 ternary system

AbstractNovel high quality factor microwave dielectric ceramics (1−x)ZrTiO4−x(Mg1/3Nb2/3)TiO4 (0.325≤x≤0.4) and (ZrTi)1−y(Mg1/3Nb2/3)yO4 (0.2≤y≤0.5) with the addition of 0.5 wt% MnCO3 in the (Mg1/3Nb2/3)O2–ZrO2–TiO2 ternary system were prepared, using solid‐state reaction method. The relationship between the structure and microwave dielectric properties of the ceramics was studied. The XRD patterns of the sintered samples reveal the main phase belonged to α‐PbO2‐type structure. Raman spectroscopy and infrared reflectivity (IR) spectra were employed to evaluate phonon modes of ceramics. The 0.65ZrTiO4−0.35(Mg1/3Nb2/3)TiO4−0.5 wt% MnCO3 ceramic can be well densified at 1240°C for 2 hours and exhibits good microwave dielectric properties with a relative permittivity (εr) of 42.5, a quality factor (Q×f) value of 43 520 GHz (at 5.9 Ghz) and temperature coefficient of resonant frequency (τf) value of −5ppm/°C. Furthermore, the (ZrTi)0.7(Mg1/3Nb2/3)0.3O4−0.5 wt% MnCO3 ceramic sintered at 1260°C for 2 hours possesses a εr of 31.8, a Q×f value of 35 640 GHz (at 6.3 GHz) and a near zero τf value of −5.9 ppm/°C. The results demonstrated that the (Mg1/3Nb2/3)O2–ZrO2–TiO2 ternary system with excellent properties was a promising material for microwave electronic device applications.