Abstract
A novel Ba12InNb9O36 microwave dielectric ceramic is prepared by a solid-state reaction method. Rietveld refinement and transmission electron microscopy confirm that Ba12InNb9O36 crystallizes as an 18-layer hexagonal perovskite structure with a stacking sequence (cccchh)3 for the BaO3 layers. A dense and compact microstructure is observed for the Ba12InNb9O36 ceramic, when sintered at 1470 °C, with an optimal relative density of 96.84 %. The intrinsic dielectric constant and dielectric loss are investigated based on the infrared reflectivity spectrum. The microwave dielectric properties of εr = 36.12, Q × f = 57,250 GHz (at f = 6.24 GHz), and τf = 17.58 ppm/°C are obtained, rendering Ba12InNb9O36 ceramic a promising candidate material for microwave electronic devices.
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