Lead zirconate titanate (PbZrxTil-xO3, PZT) is one of the important ferroelectric materials for the storage elements of high-speed non-volatile memories. It also has much potential to be used in pyroelectric sensor, ultrasonic motor, and multiplayer ceramic capacitor.PZT (Zr/Ti = 48/52) thin films were prepared using a metal-organic decomposition (MOD) process. The precursor solution used for PZT thin film preparation was based on lead acetate trihydrate, Pb(CH3COO)2; zirconium nitrate, Zr(NO3)4.5H2O; and titanium nbutoxide, Ti(nC2H9)4. 2-butoxyethanol was chosen as a solvent. A 30% excess Pb was added to the precursor to compensate for the loss of lead oxide during the annealing process. Acetic acid was used as a complexing agent for PZT solution to control the hydrolysis and condensation rates. The 0.3M precursor solution was spin-coated on the Pt(111)/Ti/SiO2/Si substrates for 20s at 3000 rpm. The deposited film was fired at 450 °C for 10 min and repeated five times to burn out the organics. The films were crystallized at 600 °C in air for 1 hr.