Abstract
Thin films of Ba0.7Sr0.3TiO3 have been fabricated using Enhanced Metal Organic Decomposition (EMOD) process on Si/SiO2/Ti/Pt substrates. The C-V characteristics of these films reveal a relation of log(1/Cm) ∝ VA where Cm is the measured capacitance at a frequency of 10 KHz and VA is the applied voltage. This voltage variable capacitance is characterized by an inverse quadratic distance proportinal charge distribution at the boundary layer between metal and paraelectric material. Above a threshold voltage of 3–5 V the leakage current density exhibits a modified Schottky emission, which states that log (JL) ∝ V 1/4. Below this threshold voltage, the origin of the leakage current which is operative in normal circuit applications has been discussed and identified from its temperature variation.
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