Carrier Mechanism Research Articles

Insights into dielectric and electrical conductivity dynamics in sol-gel synthesized Ba0.75Ni0.25Tc0.88Mn0.12O3 perovskite ceramic

This study presents a comprehensive investigation into the structural, morphological, and electrical properties of sol-gel synthesized Ba0.75Ni0.25Tc0.88Mn0.12O3 perovskite ceramic (BNTMO). The meticulous preparation protocol, involving solvating various precursors, was followed by an extensive characterization employing X-ray diffraction, scanning electron microscopy, and dielectric studies. XRD analysis affirmed the single-phase single-phase cubic structure with Pm-3m space, while SEM revealed a well-defined morphology with an average particle size of 243 nm. The electrical conductivity exploration, elucidated through Jonscher’s universal power law, provided insights into charge carrier dynamics, exhibiting semiconductor behavior. Impedance spectroscopy unraveled a distinctive relaxation peak, corroborated by Cole-Cole plots, unveiling a unique charge carrier mechanism. Dielectric studies showcased intriguing polarization dynamics, indicating promising applications in energy storage. The convergence of activation energy values from various analyses underscores the coherence in the charge carrier relaxation process. Overall, our findings contribute to a nuanced understanding of the electrical intricacies of BNTMO, presenting avenues for its utilization in advanced technological applications.Graphical

Thickness dependence of the room-temperature ethanol sensor properties of Cu2O polycrystalline films

This study investigates the fabrication process of copper thin films via thermal evaporation, with precise control over film thickness achieved through Z-position adjustment. Analysis of the as-fabricated copper films reveals a discernible relationship between grain size (〈D〉) and Z-position, characterized by a phenomenological equation 〈D〉XRDn(Z)=〈D〉0n1+32rZ2+158rZ4 , which is further supported by a growth exponent (n) of 0.41 obtained from the analysis. This value aligns well with findings in the literature concerning the growth of copper films, thus underlining the validity and reliability of our experimental outcomes. The resulting crystallites, ranging in size from 20 to 26 nm, exhibit a resistivity within the range of 3.3–4.6 μΩ · cm. Upon thermal annealing at 200 °C, cuprite Cu2O thin films are produced, demonstrating crystallite sizes ranging from ∼9 to ∼24 nm with increasing film thickness. The observed monotonic reduction in Cu2O crystallites relative to film thickness is attributed to a recrystallization process, indicating amorphization when oxygen atoms are introduced, followed by the nucleation and growth of newly formed copper oxide phase. Changes in the optical bandgap of the Cu2O films, ranging from 2.31 to 2.07 eV, are attributed mainly to the quantum confinement effect, particularly important in Cu2O with size close than the Bohr exciton diameter (5 nm) of the Cu2O. Additionally, correlations between refractive index and extinction coefficient with film thickness are observed, notably a linear relationship between refractive index and charge carrier density. Electrical measurements confirm the presence of a p-type semiconductor with carrier concentrations of ∼1014 cm−3, showing a slight decrease with film thickness. This phenomenon is likely attributed to escalating film roughness, which introduces supplementary scattering mechanisms for charge carriers, leading to a resistivity increase, especially as the roughness approaches or surpasses the mean free path of charge carriers (8.61 nm). Moreover, ab-initio calculations on the Cu2O crystalline phase to investigate the impact of hydrostatic strain on its electronic and optical properties was conducted. We believe that our findings provide crucial insights that support the elucidation of the experimental results. Notably, thinner cuprite films exhibit heightened sensitivity to ethanol gas at room temperature, indicating potential for highly responsive gas sensors, particularly for ethanol breath testing, with significant implications for portable device applications.

Chemical material as a hydrogen energy carrier: A review

In light of climate change imperatives, there arises a critical need for technological advancements and research endeavors towards clean energy alternatives to replace conventional fossil fuels. Additionally, the development of high-capacity energy storage solutions for global transportability becomes paramount. Hydrogen emerges as a promising environmentally sustainable energy carrier, devoid of carbon dioxide emissions and possessing a high energy density per unit mass. Its versatile applicability spans various sectors including industry, power generation, and transportation. However, the commercialization of hydrogen necessitates further technological innovations. Notably, high-pressure compression for hydrogen storage presents safety challenges and inherent limitations in storage capacity about 30%–50% lost production of hydrogen. Consequently, substantial research endeavors are underway in the domain of material-based chemical hydrogen storage that reactions to occur at temperatures below 200 ℃. This approach enables the utilization of existing infrastructure, such as fossil fuels and natural gas, while offering comparatively elevated hydrogen storage capacities. This study aims to introduce recent investigations concerning the synthesis and decomposition mechanisms of chemical hydrogen storage materials, including methanol, ammonia, and Liquid Organic Hydrogen Carrier (LOHC).

Influence of Pr-cations on structural, spectral, elemental, and electrical features of Zr2–R type ferrites

Hexagonal ferrites have gained much attraction due to extensive applications in telecommunication and stealth fields. R-type hexagonal ferrites are rare hexagonal ferrites used in various technological applications. In the current work, the sol-gel auto-combustion method was used to prepare samples of R-type hexagonal ferrites with the chemical formula BaZr2Fe4-xPrxO11 (x = 0.00, 0.03, 0.06, and 0.09) respectively. The impact of substituting Praseodymium (Pr) on its structural, electrical, dielectric, and magnetic properties was investigated. X-ray diffraction (XRD) patterns suggest all samples exhibit a single phase. The lattice parameters and unit cell volume experienced alterations with varying Praseodymium (Pr3+) substitution levels. The atomic dynamics study of the Pr-doped R-type hexagonal ferrites was evaluated using FTIR analysis. Two absorption bands in the infrared spectroscopy were utilized to designate the tetrahedral and octahedral sites. X-ray photoelectron spectroscopy (XPS) findings verified the presence of all metal ions alongside their respective electronic states. Jonscher's power law elucidates the conduction mechanism of charge carriers in the synthesized ferrite samples. Impedance analysis was employed to investigate the influence of relaxation time and grain boundaries on the electrical characteristics of the fabricated nanomaterials. Impedance Cole-Cole plots provide evidence that all samples demonstrate multiple relaxation processes of a non-Debye nature. The minimum reflection loss (RL) of −32.46 dB at 3.27 GHz was achieved for x = 0.09. Pr-doped R-type hexagonal ferrite has potential applications in microwave high-frequency applications.

First-Principles High-Throughput Inverse Design of Direct Momentum-Matching Band Alignment van der Waals Heterostructures Utilizing Two-Dimensional Indirect Semiconductors.

Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted widespread attention in photocatalysis. Herein, we employ a novel strategy utilizing first-principles high-throughput inverse design of 2D Z-scheme heterojunctions for photocatalysis. This approach is anchored in high-throughput screening conditions, which are fundamentally based on the characteristics of carrier mechanisms influenced significantly by Z-scheme heterojunctions. A pivotal element of our screening process is the integration of the indirect-to-direct bandgap transition with momentum-matching band alignment in k-space, guiding us to combine two 2D indirect bandgap monolayers into direct Z-scheme heterojunctions characterized by pronounced interlayer excitons. Various stacking modes introduce extra and distinct degrees of freedom that can be useful for tuning the properties of heterostructures, encompassing factors such as components, stacking patterns, and sequences. We demonstrate that various stacking modes can facilitate the indirect-to-direct bandgap transition and the emergence of interlayer excitons. These findings provide exciting opportunities for designing Z-scheme heterojunctions in photocatalysis.

Temperature Dependence of Charge Transport Properties of Quasi-2D Chiral Perovskite Thin-Film Field-Effect Transistors.

Chiral halide perovskite materials promise both superior light response and the capability to distinguish circularly polarized emissions, which are especially common in the fluorescence spectra of organic chiral materials. Herein, thin-film field-effect transistors (FETs) based on chiral quasi-two-dimensional perovskites are explored, and the temperature dependence of the charge carrier transport mechanism over the broad temperature range (80-300 K) is revealed. A typical p-type charge transport behavior is observed for both left-handed (S-C6H5(CN2)2NH3)2(CH3NH3)n-1PbnI3n+1 and right-handed (R-C6H5(CN2)2NH3)2(CH3NH3)n-1PbnI3n+1 chiral perovskites, with maximum carrier mobilities of 1.7 × 10-5 cm2 V-1 s-1 and 2.5 × 10-5 cm2 V-1 s-1 at around 280 K, respectively. The shallow traps with smaller activation energy (0.03 eV) hinder the carrier transport over the lower temperature regime (80-180 K), while deep traps with 1 order of magnitude larger activation energy than the shallow traps moderate the charge carrier transport in the temperature range of 180-300 K. From the charge carrier mechanism point of view, impurity scattering is established as the dominant factor from 80 K until around 280 K, while phonon scattering becomes predominant up to room temperature. Responsivities of 0.15 A W-1 and 0.14 A W-1 for left-handed and right-handed chiral perovskite FET devices are obtained.

High thermoelectric performance near the Mott–Ioffe–Regel limit in CuxS0.6Te0.4 meta-phases

The meta-phase, characterized by crystal-amorphicity duality in the extremely special case, has garnered considerable interests due to its glass-like thermal conductivity and tunable conduction mechanisms for carriers. However, the impact of crystal-amorphicity duality on the electrical and thermal transports remains elusive, and the carrier concentration in the meta-phase is rarely tuned in a wide range for optimized thermoelectric properties. Herein, through a combination of molecular dynamic simulations, chemical bonding analysis, and structural characterization, we reveal the glass-like distribution of Cu cations modulated by the mismatched S/Te anions in CuxS0.6Te0.4 meta-phase. Such unique atomic structure leads to hopping conduction of carriers and extremely low thermal conductivity. The carrier concentration is effectively optimized by tuning the Cu content in CuxS0.6Te0.4. Finally, we achieve a high zT of 1.4 at 900 K for Cu2.01S0.6Te0.4 sample, which is three times larger than those of Cu2S and Cu2Te matrixes. Remarkably, the high zT value is attained near the Mott–Ioffe–Regel Limit where the carrier mean free path is close to the average atomic distance. Our findings shed light on a new route to discovering high-performance thermoelectric materials.

Mechanism of miR-21 Lipid Nanoparticles Carrier in Restraining Biological Behavior in Breast Carcinoma Through Targeting of Wnt/β-Catenin Channel

This study assessed the mechanism of miR-21 with lipid nanoparticles carrier in restraining biological behavior of breast carcinoma cells through targeting of Wnt/β-catenin channel. Breast carcinoma cells were collected and divided into blank set, miR-21 set, agonist set and inhibitor set. We observed expressions of miR-21 cyclinD1, Bcl-2, Bax and Caspases-3. Also, quantity of cells through basement membrane, expression of factors related with Wnt/β-catenin signal channel, and targeting correlation between miR-21 and Wnt were also observed. The expression of miR-21 in MCF-7 cells was lowest, while the ratio of active cells in blank set was highest. The expressions of Bax and Caspase-3 and quantity of cells through basement membrane in the blank and agonist sets were highest. The expressions of cyclinD1 and Bcl-2 were lowest. The apoptotic rate in the blank and agonist sets was lowest and invasive rate was highest. The expressions of Wnt and β-catenin in the blank and agonist sets were highest. There was direct targeting correlation between miR-21 and Wnt while Wnt/β-catenin activity was restrained by miR-21. The expressions of Bax and Caspase-3 also increased and apoptosis was induced and invasion and proliferation of breast carcinoma cells were restrained.

Unraveling the “Gap‐Filling” Mechanism of Multiple Charge Carriers in Aqueous Zn‐MoS2 Batteries

AbstractThe utilization rate of active sites in cathode materials for Zn‐based batteries is a key factor determining the reversible capacities. However, a long‐neglected issue of the strong electrostatic repulsions among divalent Zn2+ in hosts inevitably causes the squander of some active sites (i.e., gap sites). Herein, we address this conundrum by unraveling the “gap‐filling” mechanism of multiple charge carriers in aqueous Zn‐MoS2 batteries. The tailored MoS2/(reduced graphene quantum dots) hybrid features an ultra‐large interlayer spacing (2.34 nm), superior electrical conductivity/hydrophilicity, and robust layered structure, demonstrating highly reversible NH4+/Zn2+/H+ co‐insertion/extraction chemistry in the 1 M ZnSO4+0.5 M (NH4)2SO4 aqueous electrolyte. The NH4+ and H+ ions can act as gap fillers to fully utilize the active sites and screen electrostatic interactions to accelerate the Zn2+ diffusion. Thus, unprecedentedly high rate capability (439.5 and 104.3 mAh g−1 at 0.1 and 30 A g−1, respectively) and ultra‐long cycling life (8000 cycles) are achieved.

Unraveling the "Gap-Filling" Mechanism of Multiple Charge Carriers in Aqueous Zn-MoS2 Batteries.

The utilization rate of active sites in cathode materials for Zn-based batteries is a key factor determining the reversible capacities. However, a long-neglected issue of the strong electrostatic repulsions among divalent Zn2+ in hosts inevitably causes the squander of some active sites (i.e., gap sites). Herein, we address this conundrum by unraveling the "gap-filling" mechanism of multiple charge carriers in aqueous Zn-MoS2 batteries. The tailored MoS2 /(reduced graphene quantum dots) hybrid features an ultra-large interlayer spacing (2.34 nm), superior electrical conductivity/hydrophilicity, and robust layered structure, demonstrating highly reversible NH4 + /Zn2+ /H+ co-insertion/extraction chemistry in the 1 M ZnSO4 +0.5 M (NH4 )2 SO4 aqueous electrolyte. The NH4 + and H+ ions can act as gap fillers to fully utilize the active sites and screen electrostatic interactions to accelerate the Zn2+ diffusion. Thus, unprecedentedly high rate capability (439.5 and 104.3 mAh g-1 at 0.1 and 30 A g-1 , respectively) and ultra-long cycling life (8000 cycles) are achieved.

Thermoelectric response across the semiconductor-semimetal transition in black phosphorus

By precisely tuning the ground state of black phosphorus with pressure from the semiconducting to semimetallic state, we track a systematic evolution of the Seebeck coefficient. Thanks to a manifest correlation between the Seebeck coefficient and resistivity, the Seebeck response in each conduction regime, i.e., intrinsic, saturation, extrinsic, and variable range hopping (VRH) regimes, is identified. In the former two regimes, the Seebeck coefficient behaves in accordance with the present theories, whereas in the latter two regimes available theories do not give a satisfactory account for its response. However, by eliminating the extrinsic sample dependence in the resistivity ρ and Seebeck coefficient S, the Peltier conductivity α=S/ρ allows us to unveil the intrinsic thermoelectric response, revealing vanishing fate for α in the VRH regime. The emerged ionized impurity scattering on entry to the semimetallic state is easily surpassed by electron-electron scattering due to squeezing of screening length accompanied by an increase of carrier density with pressure. Each carrier scattering participates an enhancement of the phonon drag contribution to the Seebeck effect, but creates the phonon drag peak with opposite sign at distinct temperature. In the low-temperature limit, a small number of carriers enhances a prefactor of T-linear Seebeck coefficient as large as what is observed in prototypical semimetals. A crucial but largely ignored role of carrier scattering in determining the magnitude and sign of the Seebeck coefficient is indicated by the observation that a sign reversal of the T-linear prefactor is concomitant with a change in dominant scattering mechanism for carriers. Published by the American Physical Society 2024

GP60 and SPARC as albumin receptors: key targeted sites for the delivery of antitumor drugs.

Albumin is derived from human or animal blood, and its ability to bind to a large number of endogenous or exogenous biomolecules makes it an ideal drug carrier. As a result, albumin-based drug delivery systems are increasingly being studied. With these in mind, detailed studies of the transport mechanism of albumin-based drug carriers are particularly important. As albumin receptors, glycoprotein 60 (GP60) and secreted protein acidic and rich in cysteine (SPARC) play a crucial role in the delivery of albumin-based drug carriers. GP60 is expressed on vascular endothelial cells and enables albumin to cross the vascular endothelial cell layer, and SPARC is overexpressed in many types of tumor cells, while it is minimally expressed in normal tissue cells. Thus, this review supplements existing articles by detailing the research history and specific biological functions of GP60 or SPARC and research advances in the delivery of antitumor drugs using albumin as a carrier. Meanwhile, the deficiencies and future perspectives in the study of the interaction of albumin with GP60 and SPARC are also pointed out.

Comparison and analysis of mechanism of β-lactoglobulin self-assembled gel carriers formed by different gelation methods

Based on the findings of our previous studies, a comprehensive comparative investigation of the quality and formation mechanism of gels obtained from protein self-assemblies induced by different methods is necessary. Self-assembled heat-induced gels had higher gel mechanical strength, and hydrophobic interactions played a greater role. Whether or not heat treatment was used to induce gel formation may play a more important role than the effect of divalent cations on gel formation. Hydrogen bonds played an important role in all gels formed using different gelation methods. Furthermore, Self-assembled cold-induced gels were considered to can load bioactive substances with different hydrophilicity properties due to the high water-holding capacity and the smooth, dense microstructure. Therefore, β-lactoglobulin fibrous and worm-like self-assembled cold-induced gels as a delivery material for hydrophilic bioactive substances (epigallocatechin gallate, vitamin B2) and amphiphilic bioactive substance (naringenin), with good encapsulation efficiency (91.92 %, 97.08 %, 96.72 %, 96.52 %, 98.94 %, 97.41 %, respectively) and slow-release performance.

Inert supports enhanced sulphur-resistant of iron-based oxygen carriers in chemical looping combustion of element sulphur

Sulphur chemical looping combustion (CLC) produces concentrated SO2 at low reaction temperatures. Here, the reaction mechanism of iron-based oxygen carriers (OCs) with sulphur and the cyclic reaction performance of the OCs were studied. The OCs were prepared on three inert supports (ZrO2, MgAl2O4, and Al2O3) with seven loading ratios using sol-gel method. The effects of the inert support, sulphur gasification temperature, OC reduction temperature, and N2 purge gas flow rate on the reaction between sulphur and OCs were investigated. For both Fe5Al5 and Fe5MgAl5 reductions, the FeO combined with Al2O3 to form FeAl2O4 spinel instead of being reduced further. Nevertheless, no spinel was formed in Fe2O3/ZrO2 (Fe5Zr5) reduction, but the over-reduction of FeO to Fe occurred. The reaction conditions were then optimized. The SO2 yields in the FR reached 87.68–91.61 %, and the FeS and FeS2 formed in the FR released SO2 in the AR. The three oxygen carriers (Fe5Al5, Fe5Zr5, and Fe5MgAl5) exhibited stable reactivity for ten cycles. Overall, Fe5Al5 was the optimal oxygen carrier for sulphur CLC, with respect to oxygen delivery, SO2 concentrations in the FR, and stability in redox cyclic reactions.

Dual mechanisms in hydrogen reduction of copper oxide: surface reaction and subsurface oxygen atom transfer.

The study of the reduction of copper oxide (CuO) by hydrogen (H2) is helpful in elucidating the reduction mechanism of oxygen carriers. In this study, the reduction mechanism of CuO by H2 and the process of oxygen atom transfer were investigated through the density functional theory (DFT) method and thermodynamic calculation. DFT calculation results showed that during the reaction between H2 and the surface of CuO, Cu underwent a Cu2+ → Cu1+ → Cu0 transformation, the Cu-O bond (-IpCOHP = 2.41) of the Cu2O phase was more stable than that (-IpCOHP = 1.94) of the CuO phase, and the reduction of Cu2O by H2 was more difficult than the reduction of CuO. As the surface oxygen vacancy concentration increased, it was more likely that the subsurface O atoms transfer to the surface at zero H2 coverage (no H2 molecule on the surface), allowing the surface to maintain a stable Cu2O phase. However, when the H2 coverage was 0.25 monolayer (ML) (one H2 molecule every four surface Cu atoms), the presence of H atoms on the surface made the upward transfer of O atoms from the subsurface more difficult. The rate of consuming surface O atoms in the reduction reaction was greater than the rate of subsurface O atom transfer induced by the reduction reaction and the surface Cu2O phase could not be maintained stably. Through thermodynamic analysis, at high H2 concentration, the reaction between H2 and CuO was more likely to generate Cu, while at low H2 concentration, it was more likely to generate Cu2O. In summary, the valence state of Cu in the reaction process between CuO and H2 depended on the concentration of H2.

A dissipative particle dynamics simulation of controlled loading and responsive release of theranostic agents from reversible crosslinked triblock copolymer vesicles.

To control the transport stability and release efficiency of loaded theranostic drugs in triblock copolymer carriers, the reversible crosslinking ability is of great significance. A molecular level exploration of such a function is needed to extend existing stabilizing and responsive dissociation mechanisms of carriers. Here, dissipative particle dynamics simulations were used to first demonstrate the formation of triblock copolymer vesicular carriers. Chemical crosslinking was used to strengthen the structural stability of the vesicle shell to avoid drug leakage. Reversible decrosslinking along with dissociation of the vesicle and release of loaded drugs were then explored. The structural, energetic and dynamical properties of the system were discussed at the molecular level. The regulation mechanism of drug release patterns was revealed by systematically exploring the effect of intra and intermolecular repulsive interactions. The results indicate that the chemical crosslinking of copolymers enhanced the compactness of the vesicle shell with a strengthened microstructure, increased binding energy, and limited chain migration, thus achieving more stable delivery of drugs. In terms of drug release, we clarified how the pairwise interactions of beads in the solution system affect the responsive dissociation of the vesicle and associated release patterns (speed and amount) of drugs. More efficient delivery and smart release of theranostic drugs are achieved using such reversible crosslinked triblock copolymer vesicles.

Effect of braiding angle and yarn length compensating mechanism of carrier on braiding of branch-merge structure in multi-braider

Effect of braiding angle and yarn length compensating mechanism of carrier on braiding of branch-merge structure in multi-braider

Carrier with cyclodextrin and quorum sensing synergy: An efficient method for selective enrichment of anammox bacteria

High-efficiency enrichment of functional bacteria is one of the biggest technical barriers to the application of anaerobic ammonium oxidation (anammox). This study combined biofilm carriers and quorum sensing to achieve rapid biomass accumulation. A biofilm carrier with biomass adsorption and quorum sensing regulation functions was developed for the rapid start-up of the reactor and enrichment of anammox bacteria (AnAOB). The nitrogen removal rates of the three reactors were further tested, and the carrier mechanism was explored. The start-up time of the reactor with the modified carriers was 28 days, which was ∼44 % shorter than that of the reactor without carriers. After 90 days of operation, the absolute abundance of total AnAOB was 3.2 times that in the control group. The modified carrier promoted the rapid adhesion of biomass through the hydrophobic cavity of cyclodextrin and induced rapid proliferation, enhancement of activity, and extracellular protein secretion of AnAOB through quorum sensing signaling molecules. Finally, a special hydrophobic biofilm with granular sludge characteristics was formed on the modified carrier through the self-assembly of hydrophobic biomass particles. Overall, we propose a novel approach to enrich anammox bacteria involving a combination of quorum sensing and biofilm carriers.

Theoretical Study of the Reactive Mechanisms of Li-Doped Ni-Based Oxygen Carrier during Chemical Looping Combustion.

Ni-based oxygen carriers (OCs) are considered promising materials in the chemical looping combustion (CLC) process. However, the reactivity of Ni-based OCs still offers the potential for further enhancement. In this work, the Li doping method has been employed for the modification of Ni-based OCs. The reactivity and microreaction mechanisms of different concentrations of Li-doped Ni-based OCs with CO in CLC are clarified using density functional theory (DFT) simulation. The structures, energy, and density of states are obtained through computational investigation of the reaction path in elementary reactions. The results show that (1) the adsorption energies of CO molecules on NiO surfaces with 4, 8, and 12% Li doping concentrations are -0.53, -0.48, and -0.54 eV, respectively, demonstrating an enhanced reactivity compared to that of pure NiO (-0.41 eV); (2) the calculation of the transition state indicates that the most favorable pathway for CO oxidation takes place on the surface of NiO with an 8% Li doping concentration, exhibiting the lowest energy barrier of 0.51 eV; and (3) the oxygen vacancy formation energies on the surface of NiO are 3.05, 2.30, and 2.10 eV for 4, 8, and 12% doping concentrations, respectively. Additionally, the decrease in oxygen vacancy formation energies exhibits a gradual decline with an increasing Li doping concentration. By comprehensive analysis, 8% is considered to be the optimal doping concentration of NiO for chemical looping combustion.

Development of technology for creating high-voltage p0–n0 junctions based on GaAs

An optimal solution has been found to the problem of obtaining p0-n0 junctions based on lightly doped GaAs layers with high values of electrical parameters and specified thicknesses of base layers to create ultra-fast high-voltage pulsed three-electrode switches with a photon injection mechanism of minority charge carriers. A technology has been developed for the formation of high-voltage, powerful subnano-second photonic injection switches based on gallium arsenide and its solid solutions. The dependence of the current rise time, switching voltage and switching stability relative to the control pulse of high-voltage photonic injection switches in a wide current and frequency mode of their operation, its sensitivity to various external influences, as well as dependence on the thickness of the p0-layer, on the transmission coefficient, on breakdown voltage Uprobe of the high-voltage p0-n0 junction. The carried out studies and the obtained results indicate the prospects of using the developed high-voltage pulsed semiconductor devices in picosecond optoelectronics for pumping high-power laser and LED structures.