Measurement Of Static Characteristics Research Articles

Static Characteristics of Pressure Control Valve

Abstract The article deals with the measurement of static characteristics of a pressure control valve. The pressure, at which the valve starts to leak oil, is adjusted by a spring. The measurement is performed on a hydraulic system that consists of tank, hydraulic pump, check valve, relief valve and pressure control valve which is measured. The results of this experimental measurement are Δp - Q characteristics of the pressure control valve for various pressure settings.

Measurement and evaluation of static characteristics of rotary hydraulic motor

The paper describes experimental equipment for measurement of static characteristics of rotary hydraulic motor. It is possible to measure flow, pressure, temperature, speed and torque by means of this equipment. It deals with measurement of static characteristics of a gear rotary hydraulic motor. Mineral oil is used as hydraulic liquid in this case. Flow, torque and speed characteristics are evaluated from measured parameters. Measured mechanical-hydraulic, flow and total efficiencies of the rotary hydraulic motor are adduced in the paper. It is possible to diagnose technical conditions of the hydraulic motor (eventually to recommend its exchange) from the experimental measurements.

Radiation Tolerance of Devices and Circuits in a 3D Technology Based on the Vertical Integration of Two 130-nm CMOS Layers

Total ionizing dose effects are studied in 130-nm transistors and pixel sensors in a vertically integrated two-layer CMOS technology, evaluating the possible impact of 3D integration on radiation tolerance and damage mechanisms. Measurements of static characteristics and noise voltage spectra before and after exposure to high total ionizing doses demonstrate that the analog performance of transistors as well as their radiation hardness are not degraded by mechanical and thermal stresses occurring during the fabrication of the 3D chips. The paper also presents irradiation results on 3D CMOS pixel sensors with a sparsified readout architecture. After exposure to ionizing radiation, these devices behave in a very similar way as analogous counterparts in a standard 2D 130-nm process, confirming that performance advantages associated with 3D integration are not impaired by an enhanced radiation sensitivity.

Residual doping concentration estimation in a separation by IMplanted OXygen film using current measurements

In situ measurements of static characteristics for an ad-hoc silicon-on-insulator (SOI) device represent an important method for SOI technologies characterisation. The Separation by IMplanted OXygen (SIMOX) technique is based on oxygen ions implantation into Si-film. After annealing, an increased doping concentration was reported, because of the residual oxygen clusters within the film, giving rise to oxygen thermal donors. Therefore this study offers an original algorithm for doping concentration estimation in these SOI films. A specific device used for in situ electrical characterisation of SOI wafers is the pseudo-metal oxide semiconductor (MOS) transistor. In this study, the doping concentrations extraction is based on graphical solution of a non-linear equation and third-order derivative zeroing of the measured static characteristics. In this scope, experimental curves I D–V G, in inversion and accumulation were experimentally measured for a pseudo-MOS transistor made in SIMOX technology. In this situation, the threshold and flat-band voltage are extracted, free of classical conventions. The extracted doping concentration in film is roughly 5.8 × 1015 cm− 3; also the conductivity is changed from p to n in film, as the literature predicted.

Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena

Theoretical and practical issues concerning the nonlinear dynamic modelling of electron devices are discussed in this article. All the different dynamic phenomena, which are important for the description of the device behaviour, are comprehensively dealt with by means of a unified mathematical derivation. In particular, both the “fast” dynamics associated with charge-storage phenomena at high operating frequencies and the “slow” dynamics of low-frequency dispersion, due to device self-heating and “charge-trapping” effects in deep-bulk and surface regions, are simultaneously taken into account. The result is an empirical, technology-independent and nonquasi-static model of electron devices, suitable for a simple and reliable identification procedure and based on conventional measurements of static characteristics and bias- and frequency- dependent small-signal parameters. The model implementation in the framework of commercially available CAD tools is also outlined in this article. Experimental validation, based on a GaAs p-HEMT, is also presented. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006.

A magnetically levitated anti-vibration mount

This paper describes the first stage of a project for assessing the use of magnetic levitation techniques for vibration isolation. A device is described which uses a permanent magnet and controlled coils to achieve stable suspension of a load. Measurements of static characteristics and frequency response under applied linear acceleration show the device to be an effective vibration isolator.