Abstract
Theoretical and practical issues concerning the nonlinear dynamic modelling of electron devices are discussed in this article. All the different dynamic phenomena, which are important for the description of the device behaviour, are comprehensively dealt with by means of a unified mathematical derivation. In particular, both the “fast” dynamics associated with charge-storage phenomena at high operating frequencies and the “slow” dynamics of low-frequency dispersion, due to device self-heating and “charge-trapping” effects in deep-bulk and surface regions, are simultaneously taken into account. The result is an empirical, technology-independent and nonquasi-static model of electron devices, suitable for a simple and reliable identification procedure and based on conventional measurements of static characteristics and bias- and frequency- dependent small-signal parameters. The model implementation in the framework of commercially available CAD tools is also outlined in this article. Experimental validation, based on a GaAs p-HEMT, is also presented. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of RF and Microwave Computer-Aided Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
