Lead halide perovskites have been regarded as promising materials for fabrication of high-performance photodetectors (PDs). However, spin-coated perovskite thin films generally have suffered from high-density grain boundaries and defect states, which severely deteriorated the performance and stability of resulting PDs. Fortunately, the above issues can be effectively solved via additive assisted metal ions doping. In this work, Co-based zeolite imidazole framework (ZIF-67) additive assisted Co ion doping has been proposed to prepare high-quality perovskite CH3NH3PbI3 (MAPbI3) thin films. Morphological, structural, optical, and electrical studies have shown that Co ion doping decreased grain boundaries as well as suppressed defect states, which greatly enhanced the performance and stability of MAPbI3/Si heterojunction PDs, including reducing dark current, increasing photocurrent, and increasing response speed. Finally, the mechanisms of suppression of defect states benefiting from Co ion doping were discussed based on density functional theory calculations. The results provided in this work will pave the way for development of high-performance and stable MAPbI3 PDs in the future.
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