Magnetic Tunnel Junctions Research Articles

Magnetoresistance and Magnetocapacitance Effect in Magnetic Tunnel Junction with Perpendicular Anisotropy of Magnetic Electrodes Tb22−δCo5Fe73/Pr6O11/Tb19−δCo5Fe76

This paper presents the results of studies of the effects of magnetoresistance and magnetocapacitance in magnetic tunnel junctions [Formula: see text]Co5[Formula: see text]/Pr6[Formula: see text]/[Formula: see text]Co5[Formula: see text] with perpendicular anisotropy of magnetic electrodes and a paramagnetic barrier layer. Experimentally measured values of tunnel magnetic resistance and tunnel magnetic capacitance in such contacts exceed 100% at room temperature. The paper analyzes the effect of magnetization reversal of one of the electrodes on the conductivity of magnetic tunnel junctions with electrodes that have perpendicular anisotropy. It is shown that significant changes in tunnel magnetic resistance and tunnel magnetic capacity in such contacts can be explained by the separation of electrons with major and minor spin polarization in the inverse nanolayer in the interface region. The separation of polarized electrons is caused by the magnetomotive force acting on the electron spin in a strongly gradient magnetic field. Such a magnetomotive force occurs with antiparallel magnetization of the magnetic electrodes and it has opposite directions for major and minor polarized electrons. As a result of the spatial separation of polarized electrons in the inversion layer, an inhomogeneous distribution of the electron density along the direction of magnetization of the magnetic contacts occurs. As a result, an additional Coulomb barrier between the magnetic electrodes and the dielectric nanolayer appears in the tunnel contacts and an additional spin capacitance appears.

Development and Comprehensive Evaluation of TMR Sensor-Based Magnetrodes.

Due to their compact size and exceptional sensitivity at room temperature, magnetoresistance (MR) sensors have garnered considerable interest in numerous fields, particularly in the detection of weak magnetic signals in biological systems. The "magnetrodes", integrating MR sensors with needle-shaped Si-based substrates, are designed to be inserted into the brain for local magnetic field detection. Although recent research has predominantly focused on giant magnetoresistance (GMR) sensors, tunnel magnetoresistance (TMR) sensors exhibit a significantly higher sensitivity. In this study, we introduce TMR-based magnetrodes featuring TMR sensors at both the tip and midsection of the probe, enabling detection of local magnetic fields at varied spatial positions. To enhance detectivity, we designed and fabricated magnetrodes with varied aspect ratios of the free layer, incorporating diverse junction shapes, quantities, and serial arrangements. Utilizing a custom-built magnetotransport and noise measurement system for characterization, our TMR-based magnetrode demonstrates a limit of detection (LOD) of 300pT/ at 1 kHz. This implies that neuronal spikes can be distinguished with minimal averaging, thereby facilitating the elucidation of their magnetic properties.

Magnetic sensors for contactless and non‐intrusive measurement of current in AC power systems

AbstractThis paper reports the results of an investigation into the use of magnetic sensors for measuring AC currents and subsequently, estimating AC current phasors in low‐ and medium voltage AC power systems. Tunnelling magnetoresistive (TMR) sensor of high sensitivity and a wide range was used for the magnetic field measurement around AC conductor. The sensor was calibrated to overcome the inequality in the sensed magnetic field due to various aspects such as the distance from the source, minute structural variations, the magnitude of the source current, and presence of harmonics. Performance was tested for accuracy at lower frequencies such as 1, 2, 5 and 10 Hz as well as at higher frequencies such as 2nd, 3rd, 4th and 5th harmonics of the fundamental frequency. The percentage total vector error (TVE) was calculated for current phasors with input current magnitudes varying from 5 to 1500 A of various frequencies and was compared with the actual current as well as with the outputs of a high accuracy conventional core‐wound donut type current transformer (CT). The measurement accuracy corresponding to magnitude, phase and TVE during laboratory and field applications validated the suitability of TMR sensor for contactless and non‐invasive AC current measurement.

Dual-range TMR current sensor based on magnetic shunt/aggregation effects utilizing single magnetic ring structure

In this paper, we propose and design a novel dual-range tunnel magnetoresistance (TMR) current sensor with a single magnetic ring structure. This design incorporates two distinct magnetic guiding effects, namely magnetic shunt and magnetic aggregation, within the same magnetic ring. By integrating a high-sensitivity TMR sensor chip with a closed-loop feedback circuit, we achieve a TMR current sensor with excellent linearity, high resolution, as well as high frequency response. The magnetic ring structure is first modeled and simulated, establishing a correlation between the distribution of magnetic induction intensity and the parameters of the magnetic ring and feedback coils. Through simulation optimization and theoretical calculations, we determine the optimal positions for TMR sensor chips in the magnetic ring, suitable for both current ranges. When a signal current is present, the TMR sensor chip generates a weak differential voltage signal, which is subsequently amplified, processed, and automatically transmitted to the laptop via a serial port. Furthermore, the sensor allows for automatic switching between the two current ranges. The results demonstrate that our designed dual-range current sensor exhibits outstanding performance characteristics, including a high resolution of 500 μA in the small range, accuracy of 0.10%, excellent linearity of 0.011%, and a fast frequency response of 500 kHz. These features make it highly applicable in various fields such as new energy vehicles and smart grids, indicating promising prospects for its widespread utilization.

Micromagnetic modeling of double spin-torque magnetic tunnel junction devices

Emerging nonvolatile magnetoresistive random access memory exhibits high endurance and long data retention compared to flash memory. Additionally, devices with double spin torque magnetic tunnel junctions (dsMTJ) featuring two magnetic reference layers demonstrate enhanced torques, fast switching, and reduced switching currents. To accurately model these devices, we adopt a coupled spin and charge transport approach allowing to describe spin-transfer torques in metallic spin valves and magnetic tunnel junctions on equal footing. Our findings indicate the critical influence of metallic non-magnetic spacers (NMS) properties separating the free layer from the second reference layer on the switching speed improvement in dsMTJ devices.

Comparative performance evaluation of voltage gate-spin orbit torque MTJ-based digital logic circuits with 45 nm CMOS technology

The development of advanced logic systems relies on low-power, compact devices with incredibly fast computational speeds. Voltage gate spin–orbit Torque Magnetic Tunnel Junction has emerged as a prominent solution, meeting these requirements and playing a crucial role in the design of digital circuits. This paper concentrates on the design, implementation, and performance evaluation of gates (AND, OR, XOR) and combinational circuits (2 × 1 Mux, subtractor, and adder) based on VgSOT MTJ. The performance characteristics of these circuits have been evaluated, and comprehensive comparisons have been made with conventional 45 nm CMOS and SOT/STT-based circuit designs. In this paper, based on the latency performance analysis, it has been established that the logic gates and combinational circuits utilizing VgSOT exhibit superior performance of approximately 96% compared to CMOS counterparts. Similarly, latency performance improvement of 44% and 75%, respectively, is seen for VgSOT-based logic gates and combinational circuits over SOT and STT-based circuits. Analysis of power consumption in VgSOT-based logic gates has revealed a remarkable power efficiency of ∼98% over CMOS- and SOT/STT-based circuit implementations. Implementing VgSOT MTJ-based design brings about notable improvements in the performance of different logic designs.

Voltage tunable sign inversion of magnetoresistance in van der Waals Fe3GeTe2/MoSe2/Fe3GeTe2 tunnel junctions

The magnetic tunnel junctions (MTJs) based on van der Waals (vdW) materials possess atomically smooth interfaces with minimal element intermixing. This characteristic ensures that spin polarization is well maintained during transport, leading to the emergence of richer magnetoresistance behaviors. Here, using all 2D vdW MTJs based on magnetic metal Fe3GeTe2 and non-magnetic semiconductor MoSe2, we demonstrate that the magnitude and even sign of the magnetoresistance can be tuned by the applied voltage. The sign inversion of the magnetoresistance is observed in a wide temperature range below the Curie temperature. This tunable magnetoresistance sign may be attributed to the spin polarizations of the tunneling carriers and the band structure of the two ferromagnetic electrodes. Such robust electrical tunability of magnetoresistance extends the functionalities of low-dimensional spintronics and makes it more appealing for next-generation spintronics with all-vdW MTJs.

Optimization of Magnetic Tunnel Junction Structure through Component Analysis and Deposition Parameters Adjustment.

In this work, we focus on a detailed study of the role of each component layer in the multilayer structure of a magnetic tunnel junction (MTJ) as well as the analysis of the effects that the deposition parameters of the thin films have on the performance of the structure. Various techniques including atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) were used to investigate the effects of deposition parameters on the surface roughness and thickness of individual layers within the MTJ structure. Furthermore, this study investigates the influence of thin films thickness on the magnetoresistive properties of the MTJ structure, focusing on the free ferromagnetic layer and the barrier layer (MgO). Through systematic analysis and optimization of the deposition parameters, this study demonstrates a significant improvement in the tunnel magnetoresistance (TMR) of the MTJ structure of 10% on average, highlighting the importance of precise control over thin films properties for enhancing device performance.

Progress in Spin Logic Devices Based on Domain-Wall Motion.

Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memories, with magnetic tunnel junctions (MTJs) playing a central role. Various spin logic concepts are also extensively explored. Among these, spin logic devices based on the motion of magnetic domain walls (DWs) enable the implementation of compact and energy-efficient logic circuits. In these devices, DW motion within a magnetic track enables spin information processing, while MTJs at the input and output serve as electrical writing and reading elements. DW logic holds promise for simplifying logic circuit complexity by performing multiple functions within a single device. Nevertheless, the demonstration of DW logic circuits with electrical writing and reading at the nanoscale is still needed to unveil their practical application potential. In this review, we discuss material advancements for high-speed DW motion, progress in DW logic devices, groundbreaking demonstrations of current-driven DW logic, and its potential for practical applications. Additionally, we discuss alternative approaches for current-free information propagation, along with challenges and prospects for the development of DW logic.

Residual Magnetic Field Testing System with Tunneling Magneto-Resistive Arrays for Crack Inspection in Ferromagnetic Pipes.

Ferromagnetic pipes are widely used in the oil and gas industry. They are subject to cracks due to corrosion, pressure, and fatigue. It is significant to detect cracks for the safety of pipes. A residual magnetic field testing (RMFT) system is developed for crack detection in ferromagnetic pipes. Based on this background, a detection probe based on an array of tunneling magneto-resistive (TMR) sensors and permanent magnets is exploited. The probe is able to partially magnetize the pipe wall and collect magnetic signals simultaneously. First, a theoretical analysis of RMFT is presented. The physics principle of RMFT is introduced, and a finite element model is built. In the finite element simulations, the effects of the crack length and depth on the RMFT signal are analyzed, and the signal characteristics are selected to represent the crack size. Next, the validated experiments are conducted to demonstrate the feasibility of the proposed RMFT method in this paper.

Magnetic field-free stochastic computing based on the voltage-controlled magnetic tunnel junction

The stochastic computing (SC) has been proven to be an energy-efficient way to perform neural network. In this study, we propose a field-free voltage-controlled spintronics SC system based on the magnetic tunnel junction (MTJ). We observe a stochastic switching behavior of the MTJ and that it could be controlled by the voltage applied on the device. The voltage-controlled stochastic switching behavior is used to encode numbers ranging from 0 to 1 into a series of random bit-streams in the SC system. Furthermore, the handwritten recognition task is performed on the MTJ-based SC system, achieving a 95% maximum accuracy, which is comparable with the floating-point based neural network. Our work provides inspiration for the energy-efficient neural network systems.

Improvements in thermoelectric features by resonant-tunneling magnetic tunnel junctions with β-Ga2O3 semiconductor

A study was conducted to investigate thermoelectric effects (TEEs) in resonant-tunneling magnetic tunnel junctions (RTMTJs) featuring wide-bandgap semiconductors such as ZnO and β-Ga2O3, along with a non-magnetic metal spacer. The transmission function was determined using the non-equilibrium Green’s function method within a tight-binding model. Significant enhancements in TEEs were observed for the β-Ga2O3 semiconductor compared to other materials, indicating its potential applicability in the emerging field of β-Ga2O3 spincaloritronics.

Experimental demonstration of an on-chip p-bit core based on stochastic magnetic tunnel junctions and 2D MoS2 transistors

Probabilistic computing is a computing scheme that offers a more efficient approach than conventional complementary metal-oxide–semiconductor (CMOS)-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The probabilistic bit (or p-bit, the base unit of probabilistic computing) is a naturally fluctuating entity that requires tunable stochasticity; by coupling low-barrier stochastic magnetic tunnel junctions (MTJs) with a transistor circuit, a compact implementation is achieved. In this work, by combining stochastic MTJs with 2D-MoS2 field-effect transistors (FETs), we demonstrate an on-chip realization of a p-bit building block displaying voltage-controllable stochasticity. Supported by circuit simulations, we analyze the three transistor-one magnetic tunnel junction (3T-1MTJ) p-bit design, evaluating how the characteristics of each component influence the overall p-bit output. While the current approach has not reached the level of maturity required to compete with CMOS-compatible MTJ technology, the design rules presented in this work are valuable for future experimental implementations of scaled on-chip p-bit networks with reduced footprint.

Bi-sigmoid spike-timing dependent plasticity learning rule for magnetic tunnel junction-based SNN.

In this study, we explore spintronic synapses composed of several Magnetic Tunnel Junctions (MTJs), leveraging their attractive characteristics such as endurance, nonvolatility, stochasticity, and energy efficiency for hardware implementation of unsupervised neuromorphic systems. Spiking Neural Networks (SNNs) running on dedicated hardware are suitable for edge computing and IoT devices where continuous online learning and energy efficiency are important characteristics. We focus in this work on synaptic plasticity by conducting comprehensive electrical simulations to optimize the MTJ-based synapse design and find the accurate neuronal pulses that are responsible for the Spike Timing Dependent Plasticity (STDP) behavior. Most proposals in the literature are based on hardware-independent algorithms that require the network to store the spiking history to be able to update the weights accordingly. In this work, we developed a new learning rule, the Bi-Sigmoid STDP (B2STDP), which originates from the physical properties of MTJs. This rule enables immediate synaptic plasticity based on neuronal activity, leveraging in-memory computing. Finally, the integration of this learning approach within an SNN framework leads to a 91.71% accuracy in unsupervised image classification, demonstrating the potential of MTJ-based synapses for effective online learning in hardware-implemented SNNs.

Spin-Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions.

Spin-orbit torques (SOT) allow ultrafast, energy-efficient toggling of magnetization state by an in-plane charge current for applications such as magnetic random-access memory (SOT-MRAM). Tailoring the SOT vector comprising of antidamping (TAD) and fieldlike (TFL) torques could lead to faster, more reliable, and low-power SOT-MRAM. Here, we establish a method to quantify the longitudinal (TAD) and transverse (TFL) components of the SOT vector and its efficiency χAD and χFL, respectively, in nanoscale three-terminal SOT magnetic tunnel junctions (SOT-MTJ). Modulation of nucleation or switching field (BSF) for magnetization reversal by SOT effective fields (BSOT) leads to the modification of SOT-MTJ hysteresis loop behavior from which χAD and χFL are quantified. Surprisingly, in nanoscale W/CoFeB SOT-MTJ, we find χFL to be (i) twice as large as χAD and (ii) 6 times as large as χFL in micrometer-sized W/CoFeB Hall-bar devices. Our quantification is supported by micromagnetic and macrospin simulations which reproduce experimental SOT-MTJ Stoner-Wohlfarth astroid behavior only for χFL > χAD. Additionally, from the threshold current for current-induced magnetization switching with a transverse magnetic field, we show that in SOT-MTJ, TFL plays a more prominent role in magnetization dynamics than TAD. Due to SOT-MRAM geometry and nanodimensionality, the potential role of nonlocal spin Hall spin current accumulated adjacent to the SOT-MTJ in the mediation of TFL and χFL amplification merits to be explored.

Fabrication of half-metallic Co2FeAlxSi1–x thin film with small magneto-crystalline anisotropy constant K1

A tunnel magnetoresistance (TMR) sensor is a highly sensitive magnetic sensor workable at room temperature. To achieve smaller magnetic field detection, both a high TMR ratio and small magnetic anisotropy of the free layer are required. In this study, we developed single crystalline Co-based Heusler alloy Co2FeAlxSi1-x films as the free layer of TMR sensors and systematically investigated their crystalline and magnetic properties. The magnetic tunnel junction (MTJ) with these alloys is a promising device for highly sensitive TMR sensors due to their half-metallicity. We evaluated the B2 and L21 ordering parameters SB2 and SL21. SB2 was above 80 % for all the samples and SL21 was 48 % at a maximum, which indicates that all the samples exhibit half-metallicity. In addition, we evaluated their first magneto-crystalline anisotropy constant K1 from magnetization curves. K1 changed from positive to negative as Al component x increases and K1 was about 1200 erg/cc at x = 0.33. These results indicate that Co2FeAlxSi1-x films around x = 0.33 have a good candidate for the free layer of TMR sensors because of their half-metallicity and small magnetic anisotropy.

Measurement-driven neural-network training for integrated magnetic tunnel junction arrays

Measurement-driven neural-network training for integrated magnetic tunnel junction arrays

Tunable High‐Temperature Tunneling Magnetoresistance in All‐van der Waals Antiferromagnet/Semiconductor/Ferromagnet Junctions

AbstractMagnetic tunnel junctions (MTJs) are widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) property of 2D magnets with atomically flat surfaces and negligible surface roughness greatly facilitates the development of MTJs, primarily in ferromagnets. Here, A‐type antiferromagnetism in 2D vdW single‐crystal (Fe0.8Co0.2)3GaTe2 is reported with TN ≈ 203 K in bulk and ≈ 185 K in 9‐nm nanosheets. The metallic nature and out‐of‐plane magnetic anisotropy make it a suitable candidate for MTJ electrodes. By constructing heterostructures based on (Fe0.8Co0.2)3GaTe2/WSe2/Fe3GaTe2, a large tunneling magnetoresistance (TMR) ratio of 180% at low temperature is obtained, with the TMR signal persisting at near‐room temperature 280 K. Furthermore, the TMR is tunable by the electric field, and the MTJ device operates stably with a low applied bias down to 1 mV (≈0.6 nA), highlighting its potential for energy‐efficient spintronic devices. This work opens up new opportunities for 2D antiferromagnetic spintronics and quantum devices.

Ultrahigh tunneling magnetoresistance ratios in the sandwich-structured full MXene Cr2NO2/Ti2CO2/Cr2NO2 van der Waals heterojunction

In this study, the structure, magnetism, energy-band, and spin-dependent electron transport properties of the Cr2NO2/Ti2CO2/Cr2NO2 magnetic tunnel junction (MTJ) were investigated using a combination of density functional theory and non-equilibrium Green’s function methods. The calculation band structures indicate that Cr2NO2 MXene is an “ideal” half-metal with a magnetic moment of 5.00 μB. Ti2CO2 MXene is an indirect band-gap semiconductor, and the Cr2NO2/Ti2CO2-stacked heterojunction reserve 100 % spin polarization because of the weak Van der Waals interface interaction. For the equilibrium state of the most stable Cr2NO2/Ti2CO2/Cr2NO2 MTJ, the total transmission coefficient for parallel configuration is about eleven orders of magnitude larger than that for anti-parallel configuration. An ultrahigh tunneling magnetoresistance (TMR) ratio of 1.92×1013% can be detected. For the non-equilibrium state, our calculation results show that the Cr2NO2/Ti2CO2/Cr2NO2 MTJ has a good transport performance when bias voltage ranges from 0 V to 0.1 V. The minimum TMR ratio of 7.51×1012% is detected at the bias voltage of 0.09 V, which can be considered as an excellent TMR ratio. Therefore, the Cr2NO2/Ti2CO2/Cr2NO2 MTJ is an excellent candidate for spintronic device application.

Spin-valley polarization and tunneling magnetoresistance in monomer, dimer, and trimer magnetic silicene superlattices

Monomer, dimer and trimer semiconductor superlattices are an alternative for bandgap engineering due to the possibility of duplicate, triplicate, and in general multiply the number of minibands and minigaps in a specific energy region. Here, we show that monomer, dimer, and trimer magnetic silicene superlattices (MSSLs) can be the basis for tunable magnetoresistive devices due to the multiplication of the peaks of the tunneling magnetoresistance (TMR). In addition, these structures can serve as spin-valleytronic devices due to the formation of two well-defined spin-valley polarization states by appropriately adjusting the superlattice structural parameters. We obtain these conclusions by studying the spin-valley polarization and TMR of monomer, dimer, and trimer MSSLs. The magnetic unit cell is structured with one seed A with positive magnetization, and one, two, or three seeds B with variable magnetization. The number of B seeds defines the monomer, dimer, and trimer superlattice, while its magnetic orientation positive or negative the parallel (PM) or antiparallel magnetization (AM) superlattice configuration. The transfer matrix method and the Landauer–Büttiker formalism are employed to obtain the transmission and transport properties, respectively. We find multiplication of TMR peaks in staircase fashion according to the number of B seeds in the superlattice unit cell. This multiplication is related to the multiplication of the minibands which reflects as multiplication of the descending envelopes of the conductance. We also find well-defined polarization states for both PM and AM by adjusting asymmetrically the width and height of the barrier-well in seeds A and B.