Fabrication of half-metallic Co2FeAlxSi1–x thin film with small magneto-crystalline anisotropy constant K1

Abstract

A tunnel magnetoresistance (TMR) sensor is a highly sensitive magnetic sensor workable at room temperature. To achieve smaller magnetic field detection, both a high TMR ratio and small magnetic anisotropy of the free layer are required. In this study, we developed single crystalline Co-based Heusler alloy Co2FeAlxSi1-x films as the free layer of TMR sensors and systematically investigated their crystalline and magnetic properties. The magnetic tunnel junction (MTJ) with these alloys is a promising device for highly sensitive TMR sensors due to their half-metallicity. We evaluated the B2 and L21 ordering parameters SB2 and SL21. SB2 was above 80 % for all the samples and SL21 was 48 % at a maximum, which indicates that all the samples exhibit half-metallicity. In addition, we evaluated their first magneto-crystalline anisotropy constant K1 from magnetization curves. K1 changed from positive to negative as Al component x increases and K1 was about 1200 erg/cc at x = 0.33. These results indicate that Co2FeAlxSi1-x films around x = 0.33 have a good candidate for the free layer of TMR sensors because of their half-metallicity and small magnetic anisotropy.