In the present work, the pressure effects on the electronic and magnetic properties of Mn x Ge 1 - x semiconductor have been investigated. The obtained results show that the lattice constant of Mn x Ge 1 - x increases with the Mn concentration increase. The magnetic moments of Mn ions decrease with increasing pressure. The interactions between Mn ions is a Ruderman–Kittel–Kasuya–Yosida like one over the whole pressure range applied. The role of the pressure actually increases the intensity of the interactions, and consequently the Curie temperature of Mn-doped Ge system increases with the pressure increase.
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