Abstract
In the present work, the pressure effects on the electronic and magnetic properties of Mn x Ge 1 - x semiconductor have been investigated. The obtained results show that the lattice constant of Mn x Ge 1 - x increases with the Mn concentration increase. The magnetic moments of Mn ions decrease with increasing pressure. The interactions between Mn ions is a Ruderman–Kittel–Kasuya–Yosida like one over the whole pressure range applied. The role of the pressure actually increases the intensity of the interactions, and consequently the Curie temperature of Mn-doped Ge system increases with the pressure increase.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
