Magnetic Logic Research Articles

Control of spin–orbit torque-driven domain nucleation through geometry in chirally coupled magnetic tracks

The interfacial Dzyaloshinskii–Moriya interaction (DMI) can be exploited in magnetic thin films to realize lateral chirally coupled systems, providing a way to couple different sections of a magnetic racetrack and realize interconnected networks of magnetic logic gates. Here, we systematically investigate the interplay between spin–orbit torques, chiral coupling, and the device design in domain wall racetracks. We show that the current-induced domain nucleation process can be tuned between single-domain nucleation and repeated nucleation of alternate domains by changing the orientation of an in-plane patterned magnetic region within an out-of-plane magnetic racetrack. Furthermore, by combining experiments and micromagnetic simulations, we show that the combination of damping-like and field-like spin–orbit torques with DMI results in selective domain wall injection in one of two arms of a Y-shaped device depending on the current density. Such an element constitutes the basis of domain wall based demultiplexer, which is essential for distributing a single input to any one of the multiple outputs in logic circuits. Our results provide input for the design of reliable and multifunctional domain wall circuits based on chirally coupled interfaces.

Swift heavy ion irradiation-induced enhancement of spin–orbit torque efficiency in Pt/Co/Ta trilayers

Increasing the efficiency of spin–orbit torque (SOT) is of great interest in applications for magnetic random access memory and logic devices due to decreased energy consumption. Here, we present that the SOT efficiency of Pt/Co/Ta films with perpendicular magnetic anisotropy can be improved by swift high-energy heavy Fe11+ ion irradiation, which is an effective method to alter crystallinity, interface roughness, and defects in ferromagnet/heavy metal heterostructures. Specifically, the Pt/Co/Ta films show an optimal SOT efficiency at ion fluence around 1.0 × 1013 ions/cm2 with the largest spin Hall angles reaching 0.59, which is the largest improvement of spin Hall angle by ion irradiation compared to previous studies using light ions. We demonstrate that the increase in SOT efficiency arises from structural changes in the Pt layer due to ion irradiation-induced damage effects at proper fluence, while the decrease in SOT efficiency is mainly attributed to the restoration of Pt crystallinity induced by beam-heating effects at high fluence. This work demonstrates that an appropriate ion irradiation process could improve the SOT efficiency and the spin Hall angle, thereby providing a way to develop future SOT-based spintronic devices.

Unraveling the negative charge-to-spin conversion in the Heusler alloy Co2FeSi

Recent discoveries of Heusler alloy achieve a strong advantage of the chemically disordered sample in the charge-to-spin conversion and attracted interests for spintronics applications. Here, we observe the negative charge-to-spin conversion in single magnetic layer of Co2FeSi/MgO and prove generations of σy and σx by spin-torque ferromagnetic resonance (ST-FMR). We also report that the change in charge-to-spin conversion efficiency could be controlled by chemical disordering. Furthermore, the thickness dependents of Co2FeSi demonstrated bulk effect is responsible for the generation of spin current. This study contributes to understanding the mechanisms of spin current generation from magnetic full Heusler alloy and also paves the way for the applications of magnetic memory and nonvolatile spin logic technologies.

Multi-terminal logic transmission via orthogonal currents controlling magnetic skyrmion motion in a perpendicular ferromagnetic multilayer nanotrack

Magnetic skyrmions are topologically nontrivial whirling spin textures with great potential for next-generation magnetic logic and memory applications as spintronic information carriers. The abilities to precisely manipulate skyrmion generation and motion using electric current are considered to be important issues for developing the high-efficiency skyrmion-based devices. In this paper, a skyrmionic logic device structure is proposed to realize the generation of Néel-type skyrmions from the topologically trivial domains. Micromagnetic simulations are employed to investigate the controllable skyrmion motions manipulated by the orthogonal current excitations in a perpendicular ferromagnetic multilayer nanotrack. The transversal skyrmion motion induced by the skyrmion Hall effect is balanced through introducing a y-axial current. A three-terminals logic output is achieved by adjusting the strength of currents along x and y directions. The interlayer coupling effect for stabilizing skyrmion nucleation is finely tuned via a ferromagnetic pinning layer in absent of the external magnetic field. It is found that both the perpendicular magnetic anisotropy and the Dzyaloshinskii-Moriya interaction are critical for the formation of stabilized skyrmions. The controllable skyrmion motion and multi-terminal information transmission offer a novel path for designing skyrmion-based logic and memory devices.

Low Gilbert damping and high perpendicular magnetic anisotropy in an Ir-coupled L10-FePd-based synthetic antiferromagnet

Thin ferromagnetic films possessing perpendicular magnetic anisotropy derived from the crystal lattice can deliver the requisite magnetocrystalline anisotropy density for thermally stable magnetic memory and logic devices at the single-digit-nm lateral size. Here, we demonstrate that an epitaxial synthetic antiferromagnet can be formed from L10 FePd, a candidate material with large magnetocrystalline anisotropy energy, through insertion of an ultrathin Ir spacer. Tuning of the Ir spacer thickness leads to synthetic antiferromagnetically coupled FePd layers, with an interlayer exchange field upwards of 0.6 T combined with a perpendicular magnetic anisotropy energy of 0.95 MJ/m3 and a low Gilbert damping of 0.01. Temperature-dependent ferromagnetic resonance measurements show that the Gilbert damping is mostly insensitive to temperature over a range of 20 K up to 300 K. In FePd|Ir|FePd trilayers with lower interlayer exchange coupling, optic and acoustic dynamic ferromagnetic resonance modes are explored as a function of temperature. The ability to engineer low damping and large interlayer exchange coupling in FePd|Ir|FePd synthetic antiferromagnets with high perpendicular magnetic anisotropy could prove useful for high performance spintronic devices.

Full electrical manipulation of perpendicular exchange bias in ultrathin antiferromagnetic film with epitaxial strain

Achieving effective manipulation of perpendicular exchange bias effect remains an intricate endeavor, yet it stands a significance for the evolution of ultra-high capacity and energy-efficient magnetic memory and logic devices. A persistent impediment to its practical applications is the reliance on external magnetic fields during the current-induced switching of exchange bias in perpendicularly magnetized structures. This study elucidates the achievement of a full electrical manipulation of the perpendicular exchange bias in the multilayers with an ultrathin antiferromagnetic layer. Owing to the anisotropic epitaxial strain in the 2-nm-thick IrMn3 layer, the considerable exchange bias effect is clearly achieved at room temperature. Concomitantly, a specific global uncompensated magnetization manifests in the IrMn3 layer, facilitating the switching of the irreversible portion of the uncompensated magnetization. Consequently, the perpendicular exchange bias can be manipulated by only applying pulsed current, notably independent of the presence of any external magnetic fields.

Spin‐Orbit Torque Switching of Magnetization in Ultra‐Thick Ferromagnetic Layers

AbstractCurrent‐induced magnetization switching via spin‐orbit torque (SOT) holds great potential for applications in high‐speed and energy‐efficient magnetic memory and logic devices. In the extensively studied heavy metal/ferromagnet (HM/FM) SOT heterostructures, the thickness of the FM layer is typically restricted to a few nanometers or less due to the rapid spin dephasing, making it challenging to implement thermally stable memory cells with high density. In this study, it is demonstrated that this thickness constraint can be significantly alleviated by utilizing an oxide ferromagnet La0.67Sr0.33MnO3 (LSMO). Through electrical transport and magnetic optical measurements, it is found that the SOT can switch the magnetization in Pt/LSMO heterostructures even at an LSMO thickness of 35 nm, which is one order of magnitude larger than that for metallic FMs, such as CoFeB. Furthermore, based on the FM thickness dependence of the switching current and the domain switching type revealed by magnetic optical Kerr effect imaging (MOKE), a possible picture is proposed to describe the SOT switching in Pt/LSMO, which highlights the critical role of the domain wall propagation in the vertical direction. The work provides valuable insights into the behavior of SOT switching in ultra‐thick FM films, offering new possibilities for their practical applications.

Transport of skyrmions by surface acoustic waves

Magnetic skyrmions in thin films with perpendicular magnetic anisotropy are promising candidates for magnetic memory and logic devices, making the development of ways to transport skyrmions efficiently in a desired trajectory of significant interest. Here, we investigate the transport of skyrmions by surface acoustic waves (SAWs) via several modalities using micromagnetic simulations. We show skyrmion pinning sites created by standing SAWs at anti-nodes and skyrmion Hall-like motion without pinning driven by traveling SAWs. We also show how orthogonal SAWs formed by combining a longitudinal traveling SAW and a transverse standing SAW can be used for the 2D positioning of skyrmions. Our results also suggest SAWs offer a viable approach to the transport of multiple skyrmions along a multichannel racetrack.

Room-Temperature Antisymmetric Magnetoresistance in Van Der Waals Ferromagnet Fe3GaTe2 Nanosheets.

Van der Waals (vdW) ferromagnetic materials have emerged as a promising platform for the development of 2D spintronic devices. However, studies to date are restricted to vdW ferromagnetic materials with low Curie temperature (Tc) and small magnetic anisotropy. Here, a chemical vapor transport method is developed to synthesize a high-quality room-temperature ferromagnet, Fe3GaTe2 (c-Fe3GaTe2), which boasts a high Tc = 356 K and large perpendicular magnetic anisotropy. Due to the planar symmetry breaking, an unconventional room-temperature antisymmetric magnetoresistance (MR) is first observed in c-Fe3GaTe2 devices with step features, manifesting as three distinctive states of high, intermediate, and low resistance with the sweeping magnetic field. Moreover, the modulation of the antisymmetric MR is demonstrated by controlling the height of the surface steps. This work provides new routes to achieve magnetic random storage and logic devices by utilizing the room-temperature thickness-controlled antisymmetric MR and further design room-temperature 2D spintronic devices based on the vdW ferromagnet c-Fe3GaTe2.

Electrical Detection and Nucleation of a Magnetic Skyrmion in a Magnetic Tunnel Junction Observed via Operando Magnetic Microscopy.

Magnetic skyrmions are topological spin textures which are envisioned as nanometer scale information carriers in magnetic memory and logic devices. The recent demonstrations of room temperature skyrmions and their current induced manipulation in ultrathin films were first steps toward the realization of such devices. However, important challenges remain regarding the electrical detection and the low-power nucleation of skyrmions, which are required for the read and write operations. Here, we demonstrate, using operando magnetic microscopy experiments, the electrical detection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) and its nucleation and annihilation by gate voltage via voltage control of magnetic anisotropy. The nucleated skyrmion can be manipulated by both gate voltages and external magnetic fields, leading to tunable intermediate resistance states. Our results unambiguously demonstrate the readout and voltage controlled write operations in a single MTJ device, which is a major milestone for low power skyrmion based technologies.

Scanning Nitrogen-Vacancy Magnetometry of Focused-Electron-Beam-Deposited Cobalt Nanomagnets.

Focused-electron-beam-induced deposition is a promising technique for patterning nanomagnets in a single step. We fabricate cobalt nanomagnets in such a process and characterize their content, saturation magnetization, and stray magnetic field profiles by using a combination of transmission electron microscopy and scanning nitrogen-vacancy (NV) magnetometry. We find agreement between the measured stray field profiles and saturation magnetization with micromagnetic simulations. We further characterize magnetic domains and grainy stray magnetic fields in the nanomagnets and their halo side-deposits. This work may aid in the evaluation of Co nanomagnets produced through focused electron-beam-induced deposition for applications in spin qubits, magnetic field sensing, and magnetic logic.

Ultrafast spin dynamics in magnetic trimer and tetramer clusters: a step towards prototypic spin-SHIFT registers

Ultrafast magnetic dynamics is a necessary ingredient for magnetic recording and ultrafast information processing. The shift functionality, although not mandatory for Boolean logic, is always implemented in CMOS CPUs and therefore must be also present in magnetic logic. In this respect, using ab initio calculations we show ultrafast spin dynamics in molecular clusters such as Co3 +CO and Ni4. In this work, we establish that clusters with magnetic atoms can provide a theoretical toolbox for efficient spin charge dynamics whose operation time can range up to a few picoseconds. The prime underlying mechanism for all spin manipulation scenarios in the above mentioned clusters are laser-induced Λ processes where the laser parameters are fully optimized using a genetic algorithm. In general, a structural asymmetry enforces substantial spin localization on the active centers of both magnetic clusters. Keeping in mind the shift functionality, we theoretically suggest a series of spin-transfer scenarios between the Co and Ni atoms in each of these two clusters independently to construct a 3-bit and a 4-bit cyclic spin-SHIFT register, respectively. The maximum operational time for both logic devices is 2 ps, which is much faster than the response time of conventional spintronic devices. Additionally, for a better understanding of the transfer cycles, their feasibility and reversibility are also investigated through the analysis of the optical spectra of the related states. Our results provide important theoretical guidance for ultrafast spin manipulation in molecular structures as well as their potential spin functionality, and thus step closer to the realization of future spin-based logic devices and quantum computation. This effectively motivates the investigation and precise establishment of the shift functionality in magnetic trimers and tetramers.

Radiation Response of Domain-Wall Magnetic Tunnel Junction Logic Devices

Radiation Response of Domain-Wall Magnetic Tunnel Junction Logic Devices

Imaging of voltage-controlled switching of magnetization in highly magnetostrictive epitaxial Fe-Ga microstructures.

The magnetoelectric behavior of epitaxial Fe-Ga microstructures on top of a (001)-oriented PMN-PT piezoelectric substrate is imaged with magnetic X-ray microscopy. Additionally, the micron-scale strain distribution in PMN-PT is characterized by X-ray microdiffraction and examined with respect to the results of the Fe-Ga magnetoelectric switching. The magnetic reorientation of Fe-Ga is found to be strongly correlated with size, shape, and crystallographic orientation of the microstructures. In the case of square-shaped structures, size dictates the influence of the strain distribution on both the initialization of the ground state and on the magnetic reorientation during application of voltage. On the other hand, elliptical microstructures demonstrate completely different magnetic responses depending on the relative orientation of their long axis with respect to the crystallographic directions of the PMN-PT. This study demonstrates that engineering the behavior of highly magnetostrictive epitaxial microdevices is possible. It further elucidates that voltage-induced actuation can be largely tuned to achieve the desired type of magnetic switching ranging from vortex circulation reversal, domain wall motion, to a large rotation of magnetization. Because of the outstanding properties of the investigated material system, the reported findings are expected to be of great interest for the realization of next-generation energy-efficient magnetic memory and logic devices.

Topological transformation of magnetic hopfion in confined geometries

Three-dimensional (3D) topological magnetic structures have attracted enormous interest due to their exceptional spatial structures and intriguing physics. Hopfions, characterized by the Hopf index, are 3D spin textures that emerged as closed twisted skyrmion strings. A comprehensive understanding of magnetic structural transitions within nanostructures is crucial for their applications in spintronics devices. Despite the demonstration of stabilization and current-driven dynamics of hopfion, their behavior in geometric confinement has remained unexplored. Here, we investigate the transformation between hopfions and torons in various nanostructures using micromagnetic simulations. By tailoring the axial ratio of elliptical nanodisks, the elliptical hopfion is found to be transformed into a toron structure. Moreover, the current-driven topological transformation between hopfion and toron has also been realized in finite-sized nanostripes and stepped nanostructures. This deformation and transformation arise from the repulsive potential of the boundaries or edges. To connect real-space observations and 3D topological spin configurations, we simulate the Lorentz transmission electron microscope images of the aforementioned magnetic structures. This study, uncovering the dynamics and transformation of hopfions, will invigorate 3D magnetic structures-based memory and logic devices.

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance (MR) effect in a low static magnetic field environment at room temperature. However, how to obtain a large room-temperature negative MR effect in them remains to be studied. In this paper, by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side, we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment, but not in a static low magnetic field environment. Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory, we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field. This theoretical analytical model is further confirmed by regulating the geometry size of the device. Our work sheds light on the development of novel magnetic sensing, magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.

Soliton solution for the integrable spin model with self-consistent potential

Integrable spin systems with potential are of great interest from the point of view of theoretical and applied physics. They make it possible to obtain accurate analytical solutions and study the properties of solitons - nonlinear wave structures that can be stable and move without distortion. The study of solitons in spin systems is of great importance not only for developing new methods for transmitting and processing information but also for developing spintronics and magnetoelectronics in general. These areas of technology are based on the use of the properties and control of the spin moment of electrons. Understanding and controlling spin dynamics in various systems opens up new possibilities for creating more efficient and powerful devices such as magnetic memories, spintronic transistors, and logic elements. This paper considers occurence of soliton in magnetic medium described by Generalized Landau-Lifshitz equation with self-consistent potential.

Design of small volume and low power consumption logic gates based on 4-terminal multilevel magnetic cell

Spintronics is an emerging technology for designing logic circuits. The non-volatile logic based on the magnetic tunnel junction (MTJ) cell is a suitable solution to overcome the leakage power problem, which has become a major obstacle for CMOS technology. Here, we introduce a new style of magnetic gate (mGate) logic, which is built by a four-terminal cell. This cell operated by motion of domain wall that is based on spin transfer torque (STT) in a multi-level cell (MLC) structure. To reduce the complexity, a static circuit with a resistive load in ratioed logic style has been used. The use of MLC Gate logic in the static ratioed logic circuit is a suitable solution to reduce the complexity level of structure and power consumption in logic circuits in the field of spintronics. The performance of different magnetic logic gates have been investigated by simulations. The simulation results show that the MLC Gates offer a smaller area and lower power consumption and lower energy in comparison with the previous mGate and magnetic computing in memory.

Magnetic field assisted stabilization of circular double wall domain lattice in oxidized Fe3GeTe2 flakes

The family of 2D ferromagnets is in the center of research for novel spintronics applications. Among the various 2D ferromagnets, Fe3GeTe2 has drawn significant attention since it combines a high Curie temperature with a van der Waals structure, which allows easy exfoliation, and a high spin polarization/large spin–orbit coupling. The presence of interfacial DMI in 2D ferromagnets have a significant impact on the behavior of magnetic domain walls, which are fundamental in magnetic memory and logic devices. By controlling the interfacial DMI, it is possible to manipulate the motion of domain walls and the magnetic domain configuration, which is essential for the development of efficient and reliable magnetic devices. In this study, we investigate the effect of an, inversion symmetry breaking, oxidized layer on the magnetic domain structure of Fe3GeTe2 flakes due to the emergence of interfacial DMI. By combining magneto-optical Kerr effect microscopy images and micromagnetic simulations, we study the formation of a circular double wall (CDW) domain lattice in oxidized flakes under specific field cooling and magnetic field sweeping protocols. Their formation is attributed to a competition between the exchange interaction both symmetric and antisymmetric (associated to interfacial DMI), magnetocrystalline anisotropy and the external magnetic field. The CDW domains have a diameter of several microns, a magnetic structure resembling that of a skyrmionium and are arranged in regular lattice that survives thermal fluctuations close to T c. Our results suggest that these CDW domains transition to Néel type skyrmions after a magnetic field threshold. These findings could have important implications for the design and optimization of 2D ferromagnetic materials for spintronic applications.

Reconfigurable skyrmion logic gates with auto-annihilating skyrmion function

Skyrmions are a spin texture with topological protection properties, which can be considered as an excellent candidate for the next generation of high-speed, nonvolatile, and low-power consumption spin devices due to their unique dynamic characteristics. In this work, we propose reconfigurable skyrmion-based logic gates with auto-annihilating skyrmion function, and six logical operations can be implemented in our model relying on the competition among the spin transfer torque (STT), skyrmion Hall effect (SkHE), skyrmion-edge repulsion, skyrmion-skyrmion topological repulsion, and voltage-controlled magnetic anisotropy (VCMA) effect. The influence of temperature on the logical operation processes indicates that the temperature range for achieving all types of logic operations and automatic annihilation function is 0–96 K. The function of automatically clearing skyrmions after the completion of logic operations can free up space for storing unnecessary skyrmions, and save energy consumption for applying additional current to eliminate them. Our results can be beneficial for the design and development of magnetic skyrmion logic gates.