Abstract
AbstractCurrent‐induced magnetization switching via spin‐orbit torque (SOT) holds great potential for applications in high‐speed and energy‐efficient magnetic memory and logic devices. In the extensively studied heavy metal/ferromagnet (HM/FM) SOT heterostructures, the thickness of the FM layer is typically restricted to a few nanometers or less due to the rapid spin dephasing, making it challenging to implement thermally stable memory cells with high density. In this study, it is demonstrated that this thickness constraint can be significantly alleviated by utilizing an oxide ferromagnet La0.67Sr0.33MnO3 (LSMO). Through electrical transport and magnetic optical measurements, it is found that the SOT can switch the magnetization in Pt/LSMO heterostructures even at an LSMO thickness of 35 nm, which is one order of magnitude larger than that for metallic FMs, such as CoFeB. Furthermore, based on the FM thickness dependence of the switching current and the domain switching type revealed by magnetic optical Kerr effect imaging (MOKE), a possible picture is proposed to describe the SOT switching in Pt/LSMO, which highlights the critical role of the domain wall propagation in the vertical direction. The work provides valuable insights into the behavior of SOT switching in ultra‐thick FM films, offering new possibilities for their practical applications.
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