Magnetic Logic Research Articles

Spin-orbit torque efficiency in Ta or W/Ta-W/CoFeB junctions

Efforts to improve the spin–orbit torque efficiencies in junctions consisting of nonmagnetic and ferromagnetic layers are current technological interest to construct magnetic memory and logic devices. However, most of the previous studies have relied on pure metallic elements, and thus, the outcomes were marginal. Here, we investigate the spin–orbit torque efficiencies of junctions consisting of Ta-W and CoFeB with Ta and W underlayers, focusing on the thickness and concentration of Ta-W alloy. The damping-like torque change is more significant with the W underlayer than with the Ta underlayer. We found an enhancement in damping-like torque value reaching −23% measured for a sample consisting of 4 nm thick β-phase Ta15W85 at% layer. This value is substantially more significant than that of the junction with β-W only (−17%).

Large spin–orbit torque efficiency in PtBi2 film

Bulk PtBi2 has attracted much attention for its topological semi-metallic electronic properties and highly promising applications in spintronics. Here, we report large spin–orbit torque (SOT) efficiency in the sputtered PtBi2 alloy with the trigonal-phase. From spin–torque-induced ferromagnetic resonance measurements, the SOT efficiency of 5 nm PtBi2 is estimated to be ∼0.2. Moreover, the spin Hall conductivity of PtBi2 [∼1 × 105 ℏ/2e (Ω m)−1] is comparable to that of topological materials, such PtTe2 and Bi2Te3. The PtBi2 film has much lower resistance than that of Bi-based topological materials, which makes it a useful candidate for application. The results suggest that the PtBi2 alloy is promising for applications in magnetic memory and logic devices driven by SOT.

Current-Induced Manipulation of the Exchange Bias in a Pt/Co/NiO Structure.

An experimental study of the phenomenon of electric current influence on the value and orientation of the exchange bias field (HEB) in the Pt/Co/NiO structure is carried out. Depending on the direction of the magnetization in a ferromagnet (FM) layer and the current pulse amplitude, the value of the HEB field can be changed repeatedly in the range of ±7.5 mT. A few experiments are performed to separate the contributions from two current-induced effects: (i) an injection of the spin current into an antiferromagnet layer (AFM) and (ii) Joule heating. As a result, we conclude that the modification in the HEB field during current pulse transmission in the Pt/Co/NiO structure is due to heating and the low value of Néel temperature (TN = 162 °C). This fact explains the absence of the exchange bias effect on the spin-orbit torque (SOT)-assisted magnetization switching. The most striking observation to emerge from the experimental data analysis is that depending on the initial spin configuration of the domain structure in the FM layer and the current pulse amplitude, the exchange bias can be changed locally. This opens up prospects for creating exchange-coupled FM/AFM structures with dynamically tuned parameters of the exchange bias, which can be used for the development of magnetic memory, neuromorphic, and logic devices based on magnetic nanosystems.

Vortex core reversal by elastic waves in ferromagnetic materials

Magnetic vortex has attracted increasing attention due to its potential application in magnetic logic and memory devices. With the development of straintronics, acoustic waves could remotely control the topologically nontrivial magnetic bits such as magnetic vortices. Understanding the dynamic response of magnetic vortex subjected to elastic waves is crucial for the future logic and memory devices. In the present work, a dynamic phase field model is developed to investigate the dynamic magnetoelastic coupling behavior between elastic waves and magnetic vortices. Phase field simulations show that the magnetic vortex core can flip over under the elastic waves with gigahertz frequency. Compared with the results of conventional phase field model without the elastodynamic term, it is found that the strain gradient caused by elastic wave plays an important role in the reversal of vortex core. When the strain gradient in the ferromagnetic material reaches a certain value, the vortex core is likely to flip over. The elastic waves with larger magnitudes and frequencies have the larger strain gradient, which are more easily to cause the reversal of vortex core. In addition to the strain gradient, magnetic damping constant also has great influence on the vortex core reversal by changing the precession process of magnetization. Larger magnetic damping constant makes the smaller precession of magnetization, which retards the reversal of vortex core. The results of this study suggest a mechanical way for the remote control of magnetic vortices by elastic waves.

Spin-Orbit Torque in Bilayers of Kagome Ferromagnet Fe3Sn2 and Pt.

Spin-orbit torque phenomena enable efficient manipulation of the magnetization in ferromagnet/heavy metal bilayer systems for prospective magnetic memory and logic applications. Kagome magnets are of particular interest for spin-orbit torque due to the interplay of magnetic order and the nontrivial band topology (e.g., flat bands and Dirac and Weyl points). Here we demonstrate spin-orbit torque and quantify its efficiency in a bilayer system of topological kagome ferromagnet Fe3Sn2 and platinum. We use two different techniques, one based on the quasistatic magneto-optic Kerr effect (MOKE) and another based on time-resolved MOKE, to quantify spin-orbit torque. Both techniques give a consistent value of the effective spin Hall angle of the Fe3Sn2/Pt system. Our work may lead to further advances in spintronics based on topological kagome magnets.

Field tunable three-dimensional magnetic nanotextures in cobalt-nickel nanowires

Cylindrical magnetic nanowires with large transversal magnetocrystalline anisotropy have been shown to sustain non-trivial magnetic configurations resulting from the interplay of spatial confinement, exchange, and anisotropies. Exploiting these peculiar 3D spin configurations and their solitonic inhomogeneities are prospected to improve magnetization switching in future spintronics, such as power-saving magnetic memory and logic applications. Here we employ holographic vector field electron tomography to reconstruct the remanent magnetic states in CoNi nanowires with 10 nm resolution in 3D, with a particular focus on domain walls between remanent states and ubiquitous real-structure effects stemming from irregular morphology and anisotropy variations. By tuning the applied magnetic field direction, both longitudinal and transverse multi-vortex states of different chiralities and peculiar 3D features such as shifted vortex cores are stabilized. The chiral domain wall between the longitudinal vortices of opposite chiralities exhibits a complex 3D shape characterized by a push out of the central vortex line and a gain in exchange and anisotropy energy. A similar complex 3D texture, including bent vortex lines, forms at the domain boundary between transverse-vortex states and longitudinal configurations. Micromagnetic simulations allow an understanding of the origin of the observed complex magnetic states.

Ferroelectric control of the perpendicular magnetic anisotropy in PtCoRu/Hf0.5Zr0.5O2 heterostructure

The magneto-electric coupling (MEC) effect has been considered an effective method for the voltages controlled magnetic anisotropy in traditional ferroelectric/ferromagnetic structures. Unlike traditional perovskite ferroelectrics, the ferroelectric hafnium-based oxides hold great potential for use in the complementary metal oxide semiconductors (CMOS) circuit with the advantages of CMOS compatibility and easy scaled-down and lower leakage current. In this article, the MEC effects in the PtCoRu/Hf0.5Zr0.5O2 (HZO) heterostructure have been investigated using the polar magneto-optical Kerr effect microscopy and anomalous Hall effect. The major modification of perpendicular magnetic anisotropy of the PtCoRu thin film was controlled obviously within the ±4 V polarized voltages of the Hf0.5Zr0.5O2 (HZO) film, accompanying with the coercivity field and remnant magnetization significantly decreased. The Hall voltages of PtCoRu in Hall bar devices were also controlled effectively under ±3 V polarized voltages. Such a finding proposes a more optimized method for the magnetic logic gates and memories based on voltage-controlled magnetic anisotropy in future.

An observable effect of spin inertia in slow magneto-dynamics: increase of the switching error rates in nanoscale ferromagnets * *Invited paper.

The Landau–Lifshitz–Gilbert (LLG) equation, used to model magneto-dynamics in ferromagnets, tacitly assumes that the angular momentum associated with spin precession can relax instantaneously when the real or effective magnetic field causing the precession is turned off. This neglect of ‘spin inertia’ is unphysical and would violate energy conservation. Recently, the LLG equation was modified to account for inertia effects. The consensus, however, seems to be that such effects would be unimportant in slow magneto-dynamics that take place over time scales much longer that the relaxation time of the angular momentum, which is typically few fs to perhaps ∼100 ps in ferromagnets. Here, we show that there is at least one very serious and observable effect of spin inertia even in slow magneto-dynamics. It involves the switching error probability associated with flipping the magnetization of a nanoscale ferromagnet with an external agent, such as a magnetic field. The switching may take ∼ns to complete when the field strength is close to the threshold value for switching, which is much longer than the angular momentum relaxation time, and yet the effect of spin inertia is felt in the switching error probability. This is because the ultimate fate of a switching trajectory, i.e. whether it results in success or failure, is influenced by what happens in the first few ps of the switching action when nutational dynamics due to spin inertia hold sway. Spin inertia increases the error probability, which makes the switching more error-prone. This has vital technological significance because it relates to the reliability of magnetic logic and memory.

Broad magnetic anisotropy regulation in as-deposited Pt/Co/MgO multilayers by tuning electronic coordination

The regulation in the magnetic anisotropy of magnetic films is crucial for developing the magnetic storage and logic devices. The traditional work achieved an effective tunability of the magnetic anisotropy by a subsequent processing of the as-deposited film, such as a post-annealing treatment or electric field application. Here, we proposed an effective method to achieve a direct and broad tunability of the magnetic anisotropy in the as-prepared film by adjusting electronic coordination. Nitrogen (N) atoms were doped in the Co layer of Pt/Co/MgO multilayers to effectively control the electronic coordination of Co and enhance the 3dz2–r2 orbital occupancy of Co for modulating the Co–O orbital hybridization. Consequently, the magnetic anisotropy of the as-deposited film changed from in-plane to perpendicular direction with the N doping, resulting in a significant increment in the magnetic anisotropy energy by 2.48 × 106 erg/cm3. Furthermore, the critical Co thickness with maintaining the perpendicular magnetic anisotropy was enlarged from 1 to 3 nm, which is beneficial for enhancing the stability of nanodevices. These findings provide an effective strategy to tune the magnetic anisotropy of magnetic films toward the applications of various magnetic storage and logic devices.

Nanoscale Magnetization and Current Imaging Using Time-Resolved Scanning-Probe Magnetothermal Microscopy.

Magnetic microscopy that combines nanoscale spatial resolution with picosecond scale temporal resolution uniquely enables direct observation of the spatiotemporal magnetic phenomena that are relevant to future high-speed, high-density magnetic storage and logic technologies. Magnetic microscopes that combine these metrics has been limited to facility-level instruments. To address this gap in lab-accessible spatiotemporal imaging, we develop a time-resolved near-field magnetic microscope based on magnetothermal interactions. We demonstrate both magnetization and current density imaging modalities, each with spatial resolution that far surpasses the optical diffraction limit. In addition, we study the near-field and time-resolved characteristics of our signal and find that our instrument possesses a spatial resolution on the scale of 100 nm and a temporal resolution below 100 ps. Our results demonstrate an accessible and comparatively low-cost approach to nanoscale spatiotemporal magnetic microscopy in a table-top form to aid the science and technology of dynamic magnetic devices with complex spin textures.

Nanoscale domain wall devices with magnetic tunnel junction read and write

The manipulation of fast domain wall motion in magnetic nanostructures could form the basis of novel magnetic memory and logic devices. However, current approaches for reading and writing domain walls require external magnetic fields, or are based on conventional magnetic tunnel junctions (MTJs) that are not compatible with high-speed domain wall motion. Here we report domain wall devices based on perpendicular MTJs that offer electrical read and write, and fast domain wall motion via spin–orbit torque. The devices have a hybrid free layer design that consists of platinum/cobalt (Pt/Co) or a synthetic antiferromagnet (Pt/Co/Ru/Co) into the free layer of conventional MTJs. We show that our devices can achieve good tunnelling magnetoresistance readout and efficient spin-transfer torque writing that is comparable to current magnetic random-access memory technology, as well as domain wall depinning efficiency that is similar to stand-alone materials. We also show that a domain wall conduit based on a synthetic antiferromagnet offers the potential for reliable domain wall motion and faster write speed compared with a device based on Pt/Co. Domain wall devices based on perpendicular magnetic tunnel junctions with a hybrid free layer design can offer electrical read and write, and fast domain wall motion driven via spin–orbit torque.

Nonvolatile magnetic half adder combined with memory writing

With the rapid development of modern computers, problems caused by the performance gap between processor and memory in von-Neumann architecture have become significant. Spintronic devices, benefitting from the potential of achieving in-memory computing, have become one of the most competitive candidates to bridge the performance gap. Great efforts have been made to realize the functions of modern computers using spintronic devices. Here, a nonvolatile magnetic arithmetic logic device working at room temperature based on coupling of anomalous Hall effect of Ta/CoFeB/MgO multilayers with perpendicular magnetic anisotropy and elements with negative differential resistance characteristics has been proposed. Logic function of half adder has been experimentally demonstrated. This device could perform the arithmetic logic function of half adder and simultaneously write the computation result in storage bits in the process of performing logic operation. It has the potential to bridge the gap between arithmetic logic units and memory in modern computers.

Discrimination of skyrmion chirality via spin\u2013orbit and \u2013transfer torques for logic operation

Recently many works on magnetic memories and logic circuits, which use a magnetic skyrmion have been reported. Previously we micromagnetically simulated a method to switch a chirality of a magnetic skyrmion formed in a magnetic thin film by introducing a pulsed heat spot. In this paper, we propose a method to discriminate the chirality of a skyrmion in a branched nanowire by using spin–orbit torque (SOT) and spin-transfer torque (STT), and confirm the validity of the method by using simulation. The simulated results show that the motion changes depending on the chirality when additional SOT is applied on a skyrmion moving in a branch by STT. This method can be used as a fundamental building block for electrical detection in memory and logic devices using the chirality of skyrmions as a data bit in addition to the presence (and polarity) of the skyrmions as conventionally used, which can be lead to multiple-valued operation.

Tailoring magnetization reversal of a single-domain bar nanomagnet via its end geometry

Nanoscale single-domain bar magnets are building blocks for a variety of fundamental and applied mesoscopic magnetic systems, such as artificial spin ices, magnetic shape-morphing microbots, and magnetic majority logic gates. The magnetization reversal switching field of the bar nanomagnets is a crucial parameter that determines the physical properties and functionalities of their constituted artificial systems. Previous methods on tuning the magnetization reversal switching field of a bar nanomagnet usually relied on modifying its aspect ratio, such as its length, width, and/or thickness. Here, we show that the switching field of a bar nanomagnet saturates when extending its length beyond a certain value, preventing further tailoring of the magnetization reversal via aspect ratios. We showcase a highly tunable switching field of a bar nanomagnet by tailoring its end geometry without altering its size. This provides an easy method to control the magnetization reversal of a single-domain bar nanomagnet. It would enable new research and/or applications, such as designing artificial spin ices with additional tuning parameters, engineering magnetic microbots with more flexibility, and developing magnetic quantum-dot cellular automata systems for low power computing.

Magnetic logic driven by electric current

Spin-based logic gates consume no power when idle, are compatible with CMOS circuitry, and can be seamlessly integrated with memory.

Field- and Current-Driven Magnetic Domain-Wall Inverter and Diode

We investigate the inversion process of magnetic domain walls (DWs) propagating through synthetic noncollinear magnetic textures, whereby an up/down DW can be transformed into a down/up DW and vice versa. We exploit the lateral coupling between out-of-plane and in-plane magnetic regions induced by the interfacial Dzyaloshinskii-Moriya interaction in Pt/Co/AlOx trilayers to realize both field-driven and current-driven magnetic DW inverters. The inverters consist of narrow in-plane magnetic regions embedded in out-of-plane DW racetracks. Magnetic imaging and micromagnetic simulations provide insight into the DW inversion mechanism, showing that DW inversion proceeds by annihilation of the incoming domain on one side of the in-plane region and nucleation of a reverse domain on the opposite side. By changing the shape of the in-plane magnetic region, we show that the DW inversion efficiency can be tuned by adjusting the ratio between the chiral coupling energy at the inverter boundary and the energy cost of nucleating a reverse domain. Finally, we realize an asymmetric DW inverter that has nonreciprocal inversion properties and demonstrate that such a device can operate as a DW diode. Our results provide input for the versatile manipulation of DWs in magnetic racetracks and the design of efficient DW devices for nonvolatile magnetic logic schemes.

A Magnetic Force Microscopy Study of Patterned T-Shaped Structures.

The study of patterned magnetic elements that can sustain more than one bit of the information is an important research line for developing new routes in magnetic storage and magnetic logic devices. Previous Monte Carlo studies of T-shaped magnetic nanostructures revealed the equilibrium and evolution of magnetic states that could be found as a result of the strong configurational anisotropy of these systems. In this work, for the first time, such behavior of T-shaped magnetic nanostructures is experimentally studied. In particular, T-shaped Co nanostructures have been produced by electron beam lithography using a single step lift-off process over Si substrates. The existence of four magnetic stable states has been proven by Magnetic Force Microscopy (MFM) and the analysis was complemented by Micromagnetic Simulations. The results confirmed that even for what can be considered large structures, with μm sizes, such four stable magnetic states can be achieved, and therefore two magnetic bits of information can be stored. We also addressed how to write and read those bits.

Current-Driven Domain Wall Dynamics in Ferrimagnetic Nickel-Doped Mn4N Films: Very Large Domain Wall Velocities and Reversal of Motion Direction across the Magnetic Compensation Point.

Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT-driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which magnetization and angular momentum compensation can be obtained by the fine adjustment of the Ni content. Large domain wall velocities, approaching 3000 m/s, are measured for Ni compositions close to the angular momentum compensation point. The reversal of the DW motion direction, observed when the compensation composition is crossed, is related to the change of direction of the angular momentum with respect to that of the spin polarization. This is confirmed by the results of ab initio band structure calculations.

Magnetic Configurations in Modulated Cylindrical Nanowires.

Cylindrical magnetic nanowires show great potential for 3D applications such as magnetic recording, shift registers, and logic gates, as well as in sensing architectures or biomedicine. Their cylindrical geometry leads to interesting properties of the local domain structure, leading to multifunctional responses to magnetic fields and electric currents, mechanical stresses, or thermal gradients. This review article is summarizing the work carried out in our group on the fabrication and magnetic characterization of cylindrical magnetic nanowires with modulated geometry and anisotropy. The nanowires are prepared by electrochemical methods allowing the fabrication of magnetic nanowires with precise control over geometry, morphology, and composition. Different routes to control the magnetization configuration and its dynamics through the geometry and magnetocrystalline anisotropy are presented. The diameter modulations change the typical single domain state present in cubic nanowires, providing the possibility to confine or pin circular domains or domain walls in each segment. The control and stabilization of domains and domain walls in cylindrical wires have been achieved in multisegmented structures by alternating magnetic segments of different magnetic properties (producing alternative anisotropy) or with non-magnetic layers. The results point out the relevance of the geometry and magnetocrystalline anisotropy to promote the occurrence of stable magnetochiral structures and provide further information for the design of cylindrical nanowires for multiple applications.

Spin Torque Gate Magnetic Field Sensor

Spin-orbit torque provides an efficient pathway to manipulate the magnetic state and magnetization dynamics of magnetic materials, which is crucial for energy-efficient operation of a variety of spintronic devices, such as magnetic memory, logic, oscillator, and neuromorphic computing. Here, we describe and experimentally demonstrate a strategy for the realization of a spin torque gate magnetic sensor with an extremely simple structure by exploiting the longitudinal field dependence of the spin torque driven magnetization switching. Unlike most magnetoresistance sensors, which require a delicate magnetic bias to achieve a linear response to the external field, the spin torque gate sensor can achieve the same without any magnetic bias, which greatly simplifies the sensor structure. Furthermore, by driving the sensor using an ac current, the dc offset is automatically suppressed, which eliminates the need for a bridge or compensation circuit. We verify the concept using the ${\mathrm{W}\mathrm{Te}}_{2}/\mathrm{Ti}/(\mathrm{Co},\mathrm{Fe})\mathrm{B}$ trilayer and demonstrate that the sensor can work linearly in the range of \ifmmode\pm\else\textpm\fi{}3--10 Oe with negligible dc offset.