Intrinsically two-dimensional (2D) ferromagnetic materials normally exhibit a low transition temperature, above which they would lose their magnetic properties. This makes it difficult to develop them for practical applications. Substituting transition metal atoms into 2D systems provides a straightforward way for achieving room-temperature ferromagnetism. Here, we propose a one-step chemical vapor deposition method to prepare Mn-substituted MoS2 monolayers, which exhibit robust magnetism, as confirmed by a combined study of physical property measurement systems and magneto-optical measurements. High-resolution transmission electron microscopy, Raman signals, and X-ray photoelectron spectroscopy analysis have all shown that the manganese atoms in MoS2 act as a substitute for the molybdenum sites. The microscopic origin of magnetism in Mn-MoS2 is further revealed on the basis of first-principles calculations, which corroborate the experimental results obtained. Our study demonstrates a simple route to creating 2D ferroelectric materials with broad prospects in spintronic devices and next-generation memory components.
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