Low Hole Mobility Research Articles

Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission

Light-emitting transistors (LETs) represent the next step in the development of light-emitting diodes (LEDs), offering additional control over emission. In this work, the transport properties and spatial distribution of electroluminescence (EL) in the spectral range of 1.2–1.7 μm were studied for lateral p+-i-n+ LEDs based on silicon-on-insulator structures with self-assembled Ge(Si) islands embedded in photonic crystals. It is shown that due to the low mobility of holes and their effective trapping in the islands, the maximum EL yield is observed at the i/p+ junction of the LED. It is demonstrated that the sign and magnitude of the bias voltage applied to the substrate (to the gate) have a significant influence on the transport and emission properties of the LEDs with Ge(Si) islands, turning them into LETs. In particular, applying a negative gate voltage shifts the position of the maximum emission region from the i/p+ to the i/n+ junction of the LET, which is related to the formation of a hole conductivity channel near the buried oxide layer. The embedding of a specially designed photonic crystal in the i-region of the LET makes it possible to manage the spectral properties of the near-IR emission by changing the sign of the gate voltage. The results obtained may be useful for the future development of optoelectronic devices.

Advancements in optical and optoelectronic characteristics of benzotriazole-based asymmetric non-fullerene acceptors for organic photovoltaics

The development of energy-efficient non-fullerene acceptors (NFAs) has attracted much attention in producing efficient organic solar cells (OSCs). These innovative materials are considered a promising alternative to traditional fullerene acceptors because they absorb a broader light range and potentially enhance the OSC performance. Herein, we engineered eleven new asymmetric caterpillar-shaped materials with an A1-D-A2-A1 core as NFAs for OSCs. These efficient materials offer a high absorption efficiency, wide energy level range, and efficient charge transport capabilities. To engineer these caterpillar-shaped NFAs (FT1-FT11), we performed various synergistic modulations of end-capped electron-withdrawing moieties and side-chain engineering on the synthetic reference molecule (FT). The electron and hole reorganization energies, binding energy, transition energy, transition density analysis, electrostatic potential, and photovoltaic characterizations have been performed for these designed caterpillar-shaped (FT1–FT11) series. The designed materials (FT1–FT11) showed a lower binding energy of 0.45 eV, a narrower bandgap (2.11 eV), higher absorption (ranges from 700.44 nm to 781.05), and low electron and hole mobilities (0.0029 and 0.0031) compared to reference molecule FT. To investigate the charge transport process, we employed polymer donor PTB7-Th and efficient NFA acceptor FT11 to establish a donor:acceptor complex (FT11:PTB7-Th). The complex study demonstrates a significant charge transformation at the donor-acceptor interface. As a result, the developed compounds (FT1–FT11), with their superior optoelectronic capabilities, could be viewed as a viable and sustainable choice to fabricate next-generation efficient OSCs.

Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P<sup>+</sup> Contacts

Ohmic contacts play a major role in the signal transfer between the semiconductor device and the external circuitry. One of the main technological issues to develop high-performance SiC-based devices is the control of metal/SiC contact properties to fabricate low resistance and high stability SiC Ohmic contacts to p-type SiC. This is mostly due to intrinsic SiC characteristics like large work function, low dopant activation for p-type materials and low hole mobility. These limits are even more emphasized in SiC JBS or MPS diodes, where Schottky and Ohmic contacts on the P doped regions embedded in the active area to improve surge ruggedness are usually formed by using the same metallization process. This naturally results either in a high Schottky barrier height in the Schottky contact with consequent increase of the conduction loss at low currents or in a poorly conductive Ohmic contact, leading to reduced IFSM capability. Therefore, the optimization and control of the process parameters like for example the P+ doping concentration peak underneath the metallization layer and the annealing process temperatures is crucial to obtain a good Ohmic contact and enhance the device´s robustness against surge current.

Giant Enhancement of Hole Mobility for 4H-Silicon Carbide through Suppressing Interband Electron-Phonon Scattering.

4H-silicon carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressive strain can reverse the sign of crystal-field splitting and change the ordering of electron bands close to the valence band maximum. Therefore, the interband electron-phonon scattering is severely suppressed and the electron group velocity is significantly increased. The out-of-plane hole mobility of 4H-SiC can be greatly enhanced by ∼200% with 2% uniaxial compressive strain applied. This work provides new insights into the electron transport mechanisms in semiconductors and suggests a strategy to improve hole mobility that could be applied to other semiconductors with hexagonal crystalline geometries.

Single-Layer InGeS: Robust direct Bandgap, super high electron Mobility, long-lived Carriers, and Ohmic contact for Next-Generation Field-Effect transistors

Two-dimensional (2D) materials holding appropriate bandgaps, high carrier mobility, and long carrier lifetime require to be urgently explored as electronic devices such as field effect transistors (FETs) become more and more miniaturized. Herein, single-layer (SL) InGeS is thoroughly investigated using first-principles calculations. Theoretical results confirm SL InGeS has nice thermal and dynamical stability at 300 K. SL InGeS holds a direct bandgap of 1.28 eV by HSE06, and its electrons and holes are inherently located at different atomic regions. In the visible range, SL InGeS displays a maximum optical absorption of ∼ 5 × 105 cm−1, surpassing that of most known 2D materials. Furthermore, SL InGeS possesses high electron mobility (∼11100 cm2 V−1 s−1) and relatively low hole mobility (∼1000 cm2 V−1 s−1), and its carrier lifetime is as long as 4.99 ns. In addition, an Ohmic contact is designed in the graphene/InGeS heterojunction, implying small current resistance. In brief, all these scientific findings promise SL InGeS is a hopeful candidate in ultrathin FET devices.

Direct observation of the electronic structure and many-body interactions of low-mobility carriers in perylene diimide derivative

Despite the rapid progresses in the field of organic semiconductors, aided by the development of high-mobility organic materials, their high carrier mobilities are often unipolar, being sufficiently high only for either electrons or holes. Yet, the basic mechanisms underlying such significant mobility asymmetry largely remains elusive. We perform angle-resolved photoelectron spectroscopy to reveal the occupied band structures and the many-body interactions for low-mobility hole carriers in a typical n-type semiconductor perylene diimide derivative. The band dispersion exhibits strong renormalization to the calculated non-interacting electronic structure. The analysis including many-body interactions elucidate that the significant mass enhancement can be understood in terms of strong charge–phonon coupling, leading to an important mechanism of polaron band transport of low intrinsic carrier mobility in organic semiconductors.

Universal strain engineering for enhancing the hole mobility and dopability in p-type semiconductors

Modern electronic and optoelectronic devices rely on the development of the complementary pair of n-type and p-type semiconductors. However, it is often seen that n-type semiconductors are easier to realize and offer superior performances than their p-type counterparts, with p-type semiconductors showing much lower hole mobility and inefficient carrier doping. Here, by using first-principles studies, we demonstrate that lattice strain engineering can be a universal approach to enhance the hole mobility and dopability in p-type semiconductors. A broad class of p-type semiconductors, including anion p orbital derived valence band compounds (nitrides, oxides, halides, and chalcogenides), s orbital based post-transition metal oxides (e.g., SnO), and d-orbital based transition metal oxides (e.g., NiO), have been applied on strain to demonstrate their valence band modulation ability for the purpose of increasing the hole mobility and p-type dopability. We show that compressive lattice strain generally results in an upshifted valence band edge and reduced effective hole mass, leading to enhanced p-type dopability and increased hole mobility. Our work highlights strain engineering as a universal and effective approach for achieving better performed p-type compound semiconductors.

Advancing Heteroanionicity in Zintl Phases: Crystal Structures, Thermoelectric and Magnetic Properties of Two Quaternary Semiconducting Arsenide Oxides, Eu8Zn2As6O and Eu14Zn5As12O.

Two novel quaternary oxyarsenides, Eu8Zn2As6O and Eu14Zn5As12O, were synthesized through metal flux reactions, and their crystal structures were established by single-crystal X-ray diffraction methods. Eu8Zn2As6O crystallizes in the orthorhombic space group Pbca, featuring polyanionic ribbons composed of corner-shared triangular [ZnAs3] units, running along the [100] direction. The structure of Eu14Zn5As12O crystallizes in the monoclinic space group P2/m and its anionic substructure can be described as an infinite "ribbonlike" chain comprised of [ZnAs3] trigonal-planar units, although the structural complexity here is greater and also amplified by disorder on multiple crystallographic positions. In both structures, the O2- anion occupies an octahedral void with six neighboring Eu2+ cations. Formal electron counting, electronic structure calculations, and transport properties reveal the charge-balanced semiconducting nature of these heteroanionic Zintl phases. High-temperature thermoelectric transport properties measurements on Eu14Zn5As12O reveal relatively high resistivity (ρ500K = 8 Ω·cm) and Seebeck coefficient values (S500K = 220 μV K-1), along with a low concentration and mobility of holes as the dominant charge-carriers (n500K = 8.0 × 1017 cm-3, μ500K = 6.4 cm2/V s). Magnetic studies indicate the presence of divalent Eu2+ species in Eu14Zn5As12O and complex magnetic ordering, with two transitions observed at T1 = 21.6 K and T2 = 9 K.

Oxygen Stoichiometry Engineering in P‐Type NiOx for High‐Performance NiO/Ga2O3 Heterostructure p–n Diode

P‐type NiOx is employed for the fabrication of NiO/Ga2O3 p–n diode. Addressing the challenge of low hole mobility in NiOx, an extensive investigation into the impact of oxygen stoichiometry engineering in NiOx is conducted. The meticulous optimization of the O2/Ar ratio to 30% during the sputtering process results in significant improvements, notably achieving enhanced hole mobility of 1.61 cm2 V−1 s. It leads to a low specific on‐resistance of 2.79 mΩ cm2 and a high rectification ratio of ≈1011, underscoring the efficacy of recombination transport mechanism driven by enhanced hole mobility. Detailed band alignment analysis between NiOx and Ga2O3 reveals a small band offset, with a valence band offset of 2.47 eV and a conduction band offset of 1.70 eV. It suggests a tailored modification of band alignment through the engineering the oxygen stoichiometry in NiOx, facilitating enhanced recombination conduction. The device exhibits a superior breakdown voltage (Vb) of 2780 V and a notable Baliga's figure of merit (BFOM) of 2.77 GW cm−2, surpassing the SiC unipolar figure of merit. The insights gained from this work are expected to inform future designs and optimizations of high‐performance Ga2O3 electronic devices.

3D Conjugated Hole Transporting Materials for Efficient and Stable Perovskite Solar Cells and Modules.

The orthogonal structure of the widely used hole transporting material (HTM) 2,2',7,7'-tetrakis(N, N-di-p-methoxyphenylamino)-9,9'-spirobifluorene (Spiro-OMeTAD)imparts isotropic conductivity and excellent film-forming capability. However, inherently weak intra- and inter-molecular π-π interactions result in low intrinsic hole mobility. Herein, a novel HTM, termed FTPE-ST, with a twist conjugated dibenzo(g,p)chrysene core and coplanar 3,4-ethylenedioxythiophene (EDOT) as extended donor units, is designed to enhance π-π interactions, without compromising on solubility. The three-dimensional (3D) configuration provides the material multi-direction charge transport as well as excellent solubility even in 2-methylanisole, and its large conjugated backbone endows the HTM with a high hole mobility. Moreover, the sulfur donors in EDOT units coordinate with lead ions on the perovskite surface, leading to stronger interfacial interactions and the suppression of defects at the perovskite/HTM interface. As a result, perovskite solar cells (PSCs) employing FTPE-ST achieve a champion power conversion efficiency (PCE) of 25.21% with excellent long-time stability, one of the highest PCEs for non-spiro HTMs in n-i-p PSCs. In addition, the excellent film-forming capacity of the HTM enables the fabrication of FTPE-ST-based large-scale PSCs (1.0cm2) and modules (29.0cm2), which achieve PCEs of 24.21% (certificated 24.17%) and 21.27%, respectively.

Improvement of Thermal Stability and Photoelectric Performance of Cs2PbI2Cl2/CsPbI2.5Br0.5 Perovskite Solar Cells by Triple-Layer Inorganic Hole Transport Materials.

Conventional hole transport layer (HTL) Spiro-OMeTAD requires the addition of hygroscopic dopants due to its low conductivity and hole mobility, resulting in a high preparation cost and poor device stability. Cuprous thiocyanate (CuSCN) is a cost-effective alternative with a suitable energy structure and high hole mobility. However, CuSCN-based perovskite solar cells (PSCs) are affected by environmental factors, and the solvents of an HTL can potentially corrode the perovskite layer. In this study, a Co3O4/CuSCN/Co3O4 sandwich structure was proposed as an HTL for inorganic Cs2PbI2Cl2/CsPbI2.5Br0.5 PSCs to address these issues. The Co3O4 layers can serve as buffer and encapsulation layers, protecting the perovskite layer from solvent-induced corrosion and enhancing hole mobility at the interface. Based on this sandwich structure, the photovoltaic performances of the Cs2PbI2Cl2/CsPbI2.5Br0.5 PSCs are significantly improved, with the power conversion efficiency (PCE) increasing from 9.87% (without Co3O4) to 11.06%. Furthermore, the thermal stability of the devices is also significantly enhanced, retaining 80% of its initial PCE after 40 h of continuous aging at 60 °C. These results indicate that the Co3O4/CuSCN/Co3O4 sandwich structure can effectively mitigate the corrosion of the perovskite layer by solvents of an HTL and significantly improves the photovoltaic performance and thermal stability of devices.

Promoting the carrier mobility of Nb2SiTe4 through cation coordination engineering

Ternary two-dimensional (2D) monoclinic Nb2SiTe4 has garnered significant attention for its potential applications in anisotropic photoelectronics. Yet, its intrinsic indirect bandgap nature and low hole mobility, attributed to the short Nb–Nb dimer configurations, hinder the efficient photogenerated carrier separation and transport. In this Letter, using density functional theory calculations, we demonstrate the interlayer intercalation of Si results in the formation of a metastable orthorhombic Nb2SiTe4 structure devoid of detrimental short Nb–Nb dimers. Notably, this Si intercalation leads to a remarkable reduction of hole effective masses of orthorhombic Nb2SiX4 (X = S, Se, and Te), a crucial factor for achieving high carrier mobility. Taking the orthorhombic Nb2SiTe4 monolayer as an example, the calculated hole mobility (>100 cm2 V−1 s−1) is comparable in magnitude to the respectable hole mobility observed in multiple layers of the monoclinic Nb2SiTe4. To simultaneously enhance electron and hole mobility, we establish a van der Waals junction between the monoclinic and orthorhombic Nb2SiTe4 structures, achieving high and comparable carrier mobilities. The Nb2SiTe4 junction exhibits a nearly direct bandgap of 0.35 eV, rendering it suitable for infrared light harvesting. Furthermore, carriers within the Nb2SiTe4 junction become spatially separated across different layers, resulting in an intrinsic built-in electric field, which is superior for efficient photo-generated charge separation and decreases the potential nonradiative carrier recombination. Our findings highlight the impact of cation coordination engineering on the electronic and optical properties of 2D Nb2SiTe4 and provide a feasible solution to achieve better carrier transport in low-dimensional photovoltaic functionalities.

18.62%‐Efficiency Binary Organic Solar Cells with a PEDOT1:PSS2.80 Buffer Layer

AbstractBinary organic solar cells (OSCs) having a controllable phase‐separated morphology of active layers and simple solution manufacturing are desirable for organic photovoltaic adaptation. However, low hole mobility and an unbalanced hole‐ and electron transport reduce the power conversion efficiency (PCE) of the OSCs. Here, a highly efficient binary OSC with a poly(3,4‐ethylenedioxythiophene):poly(4‐styrenesulfonate) (PEDOT:PSS) buffer layer as a hole transport layer (HTL) via using a water‐soluble sulfonate to wrap the PEDOT:PSS core‐shell structures in solutions is reported. The PEDOT1:PSS2.80 buffer layers have good merits including i) a smooth, homogeneous, and hydrophilic surface for an intimate contact, ii) a high work function and raised surface potentials with much uniform distributions for an energy band alignment, and iii) a high optical transmittance in the broad spectral region from 400 to 1100 nm along with an improved electrical conductivity. Benefiting from a raised hole mobility and a better charge‐mobility balance, the solution‐processed binary OSCs yielded a high PCE of 18.62%. 18.62% is one of the highest values among these binary OSCs based on the PEDOT:PSS HTLs and PM6:L8‐BO active layers. The PEDOT1:PSS2.80 buffer layers are superior to the pristine PEDOT1:PSS2.60 buffer layers in terms of raising the OSC efficiency.

An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications

In this paper, we propose an optimized device structure to address issues in 3D NAND flash memory devices, which encounter difficulties when using the hole erase method due to the unfavorable hole characteristics of indium gallium zinc oxide (IGZO). The proposed structure mitigated the erase operation problem caused by the low hole mobility of IGZO by introducing a filler inside the IGZO channel. It facilitated the injection of holes into the IGZO channel through the filler, while the existing P-type doped polysilicon filler material was replaced by a P-type oxide semiconductor. In contrast to polysilicon (band gap: 1.1 eV), this P-type oxide semiconductor has a band gap similar to that of the IGZO channel (2.5 to 3.0 eV). Consequently, it was confirmed through device simulation that there was no barrier due to the difference in band gaps, enabling the seamless supply of holes to the IGZO channel. Based on these results, we conducted a simulation to determine the optimal parameters for the P-type oxide semiconductor to be used as a filler, demonstrating improved erase operation when the P-type carrier density was 1019 cm−3 or higher and the band gap was 3.0 eV or higher.

High-efficiency perovskite photodetectors using manganese dioxide oxidation Spiro-OMeTAD as hole transport layer

Spiro-OMeTAD is a commonly used hole transport layer (HTL) in perovskite photodetectors (PDs) due to its high glass transition temperature, good solubility in organic solvents, amorphous nature, and better energy level alignment with perovskite layers, etc. However, the unoxidized Spiro-OMeTAD has low electrical conductivity and hole mobility, while air oxidation raises device performance and reproducibility issues. In this study, we successfully achieved early and rapid oxidation of Spiro-OMeTAD by introducing a quantitative amount of manganese dioxide (MnO2), circumventing the challenges of air oxidation and greatly reducing device preparation time and cost. Additionally, MnO2-doped HTLs exhibited significantly improved PD performance, with specific detectivity (D*) increased from 4.36 × 1012 Jones to 4.14 × 1013 Jones. Unpackaged MnO2-doped PDs maintained about 81.4 % of the initial EQE value in the glove box after one month, showing remarkable stability. This work demonstrates the feasibility of using MnO2 as an oxidizing agent for Spiro-OMeTAD and allows us to appreciate the potential of transition metal-based oxides in the oxidation of HTMs.

Nitrogen-doped titanium dioxide as a novel eco-friendly hole transport layer in lead-free CsSnI3 based perovskite solar cells

After an abrupt rise in the efficiency of perovskite solar cells (PSCs), hole transport layer (HTL) as an essential factor for fabricating efficient PSC devices attract attentions. The pristine spiro-OMeTADspiro-OMeTAD, as most widely used HTL, still suffers from poor electrical conductivity, low hole mobility, and low oxidation rate. In this research, the spiro-OMeTAD is replaced by nitrogen doped TiO2 (N-TiO2) HTL. Then, the variation in the device design key parameters such as the thickness and bulk defect density of perovskite layer, simultaneous modifications of defect density and defect energy level, and acceptor doping concentration in absorber layer, and operating temperature are examined with their impact on the photovoltaic characteristic parameters. The standard lead-free CsSnI3–based PSCs with spiro-OMeTAD HTL is simulated using SCAPS-1D software. The CsSnI3-based solar cell with N-TiO2 as HTL showed higher efficiency of 27.03 % than the standard device with PCE of 23.63 % for conventional spiro-OMeTAD HTL.

Research On Mg Doping in Nitride Semiconductor Materials

Summarized the achievements of various model research directions in nitride Mg doped semiconductors in this thesis. Due to the Internal properties of Mg acceptors which resulting the low ionization rate of acceptor, and the low hole mobility in heavily Mg doped nitrides, the conductivity of Mg doped nitrides is limited. At present, research is divided into three categories of models, one is a new type of polarization model. This model adopts a built-in electron polarization ionization acceptor dopant in the bulk uniaxial semiconductor crystal, and provides an attractive solution for the problem of P-type and n-type doping in broadband gap semiconductors. The other two are the traditional thermal activation model. There are mainly ultra-high-pressure-annealing (UHPA) and multicycle rapid thermal annealing (MRTA) respectively. Both of these schemes can activate more Mg impurities, resulting in higher conductivity in nitrides. The principles, advantages and disadvantages, and future development prospects will be explained of these three models in this thesis.

Highly Solvent Resistant Small-Molecule Hole-Transporting Materials for Efficient Perovskite Quantum Dot Light-Emitting Diodes.

Perovskite quantum dot light-emitting diodes (Pe-QLEDs) have been shown as promising candidates for next-generation displays and lightings due to their unique feature of wide color gamut and high color saturation. Hole-transporting materials (HTMs) play crucial roles in the device performance and stability of Pe-QLEDs. However, small-molecule HTMs have been less studied in Pe-QLEDs due to their poor solvent resistance and low hole mobility. In this work, three novel small-molecule HTMs employing benzimidazole as the center core, named X4, X5, and X6, were designed and synthesized for application in Pe-QLEDs. One of the tailored HTM-X6 exhibits excellent solvent resistant ability to the perovskite quantum dot (QD) inks due to its proper solubility and low surface energy. Our result clearly demonstrated that the synergistic effect of poor solubility and low surface energy facilitates the achievement of good solvent resistance to perovskite QD inks. As a result, a promising maximal external quantum efficiency (EQE) of 14.1% is achieved in X6-based CsPbBr3 Pe-QLEDs, which is much higher than that of X4 (9.16%) and X5 (6.60%)-based devices, which is comparable to the PTAA reference (EQE ∼ 15.8%) under the same conditions. To the best of our knowledge, this is the first example that a benzimidazole-based small-molecule HTM demonstrated a good application in Pe-QLEDs. Our work provides new guidance for the rational design of small-molecule HTMs with high solvent resistance for efficient Pe-QLEDs and other photoelectronic devices.

Reversal of Band-Ordering Leads to High Hole Mobility in Strained p-type Scandium Nitride.

Low hole mobility of nitride semiconductors is a significant impediment to realizing their high-efficiency device applications. Scandium nitride (ScN), an emerging rocksalt indirect band gap semiconductor, suffers from low hole mobility. Utilizing the ab initio Boltzmann transport formalism including spin-orbit coupling, here we show the dominating role of ionized impurity scattering in reducing the hole mobility in ScN thin films. We suggest a route to increase the hole mobility by reversing band ordering through strain engineering. Our calculation shows that the biaxial tensile strain in ScN lifts the split-off hole band above the heavy hole and light hole bands, leading to a lower hole-effective mass and increasing mobility. Along with the impurity scattering, the Fröhlich interaction also plays a vital role in the carrier scattering mechanism due to the polar nature of ScN. Increased hole mobility in ScN will lead to higher efficiencies in thermoelectric, plasmonics, and neuromorphic computing devices.

Modeling and simulation of > 19% highly efficient PbS colloidal quantum dot solar cell: A step towards unleashing the prospect of quantum dot absorber

We used the SCAPS-1D simulation tool to maximize the performance of lead sulfide (PbS) solar cells. A PbS solar cell was first modeled and then experimentally verified from past research. The ZnO electron-transport layer (ETL) was then replaced with ZnO:Al ETL material. Additionally, the fluorine-doped tin oxide work function, PbS-TBAI, ZnO:Al layer thicknesses, ZnO:Al/PbS-TBAI, PbS-TBAI/PbS-EDT defect density, PbS-TBAI defect density, ZnO:Al, and PbS-TBAI doping concentration were optimized. Results showed a greater alignment of the absorber-layer valence band with the HOMO and LUMO of ZnO:Al than that of ZnO ETL. The PbS solar cell exhibited the greatest efficiency at the optimum values of 0.4 µm, 0.04 µm, 1019 cm–3, 4.0 eV, 1017 cm–3, 1014 cm–2, 1018 cm–2, and 3.8 eV for absorber thickness, ETL thickness, ETL doping concentration, work function of front contact, PbS-TBAI doping concentration, and electron affinity of ZnO:Al, respectively. The PbS solar cell also performed best at interface defect densities of 1014 and 1018 cm–2 for ZnO:Al/PbS-TBAI and PbS-TBAI/PbS-EDT, respectively. The PCE of ZnO:Al ETL-based device also increased from 15.036% before optimization to 19.169% after. The optimized result was found to be affected by temperature. The PbS-optimized device with inorganic hole-transport layers (HTLs) demonstrated higher performance than the device with organic HTL. This finding was attributed to the low hole mobility in the organic HTL than those of inorganic ones. Therefore, the ZnO:Al ETL-based device was more efficient than the ordinary ZnO ETL-based device.