Abstract
After an abrupt rise in the efficiency of perovskite solar cells (PSCs), hole transport layer (HTL) as an essential factor for fabricating efficient PSC devices attract attentions. The pristine spiro-OMeTADspiro-OMeTAD, as most widely used HTL, still suffers from poor electrical conductivity, low hole mobility, and low oxidation rate. In this research, the spiro-OMeTAD is replaced by nitrogen doped TiO2 (N-TiO2) HTL. Then, the variation in the device design key parameters such as the thickness and bulk defect density of perovskite layer, simultaneous modifications of defect density and defect energy level, and acceptor doping concentration in absorber layer, and operating temperature are examined with their impact on the photovoltaic characteristic parameters. The standard lead-free CsSnI3–based PSCs with spiro-OMeTAD HTL is simulated using SCAPS-1D software. The CsSnI3-based solar cell with N-TiO2 as HTL showed higher efficiency of 27.03 % than the standard device with PCE of 23.63 % for conventional spiro-OMeTAD HTL.
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