Abstract
P‐type NiOx was employed for the fabrication of NiO/Ga2O3 p‐n diode. Addressing the challenge of low hole mobility in NiOx, an extensive investigation into the impact of oxygen stoichiometry engineering in NiOx was conducted. The meticulous optimization of the O2/Ar ratio to 30% during the sputtering process resulted in significant improvements, notably achieving enhanced hole mobility of 1.61 cm2/V·s. It led to a low specific on‐resistance of 2.79 mΩ·cm2 and a high rectification ratio of ∽1011, underscoring the efficacy of recombination transport mechanism driven by enhanced hole mobility. Detailed band alignment analysis between NiOx and Ga2O3 revealed a small band offset, with a valence band offset of 2.47 eV and a conduction band offset of 1.70 eV. It suggests a tailored modification of band alignment through the engineering the oxygen stoichiometry in NiOx, facilitating enhanced recombination conduction. The device exhibits a suprior breakdown voltage (Vb) of 2780 V and a notable Baliga’s figure of merit (BFOM) of 2.77 GW/cm2, surpassing the SiC unipolar figure of merit. The insights gained from this work are expected to inform future designs and optimizations of high‐performance Ga2O3 electronic devices.This article is protected by copyright. All rights reserved.
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