Reducing indium consumption has received increasing attention in contact schemes of high efficiency silicon heterojunction (SHJ) solar cells. It is imperative to discover suitable, low-cost, and resource-abundant transparent electrodes to replace the conventional, resource-scarce indium-based transparent electrodes. Herein, tantalum doped tin oxide (TTO), prepared through low-temperature sputtering, is selected as an alternative material. Notably, the Anti-Burstein-Moss effect of TTO is observed, which is ascribed to variations of stress in films. Based on this finding, TTO was first applied to SHJ solar cells, and the photoelectric tradeoff in front and rear contacts is gained by matching nanocrystalline silicon layers and adjusting TTO thickness. Ultimately, an indium-free SHJ solar cell with an efficiency of 25.15 % is obtained (certified efficiency 25.10 %, 274.30 cm2).