A symmetrical solid state galvanic cell, Ni/ZrO2 + 9.5 mol% Y2O3/Ni, was used as a model system to study and modify chemical reactions at Ni—ZrO2 interfaces. The cell was produced by diffusion bonding Ni on either side of a single crystal of yttria-doped cubic zirconia. Different oxygen activities were established at the interfaces by applying an electrical potential across the galvanic cell. When the electrochemical potential was greater than a critical value, of the order of V, the intermetallic compound Ni5Zr formed at the interface with low oxygen activity and NiO formed at the interface with high oxygen activity. Under these experimental conditions, the ionic transference, number of the electrolyte was ∼0.03. In order to avoid internal, electrical short circuiting of the cell, a voltage had to be applied during cooling. In a different experiment, after applying the electrical current, the opn circuit voltage of the cell was measured. During this period, the cell was short circuited internally, which caused the oxidation of the Ni5Zr layer to Ni and monoclinic ZrO2 and the reduction of the NiO layer to Ni. The microstructure, chemistry and morphology of the phases, grown under different conditions, were investigated using scanning and transmission electron microscopy. In addition, the measured and calculated thickness of the reaction products were compared.
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