Abstract
AbstractThe kinetics of point defect relaxation in manganosite after sudden changes of the oxygen activity in a surrounding CO/CO2 gas atmosphere have been studied by means of electrical conductivity measurements on single crystalline needle‐like samples at 1000°C. The results show that at very low oxygen activity the relaxation process is essentially controlled by diffusion processes in the bulk, but that at high oxygen activity the oxygen transfer at the manganosite/gas interface determines the kinetics.
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