Locking Range Injection-locked Frequency Divider Research Articles

Design of a 90.9% Locking Range Injection-Locked Frequency Divider With Device Ratio Optimization in 90-nm CMOS

A 12-32 GHz divide-by-2 (D2) injection-locked frequency divider (ILFD) is presented in this paper. First, the device ratio of the injection mixer and cross-coupled pair is optimized to achieve a wide locking range (LR). Then, the inductive peaking and forward-body-bias techniques are applied to the injection mixer to boost its transconductance and to enhance injection efficiency for further extension of the LR. Finally, the harmonic suppression technique is introduced to reduce the output harmonics. Using the aforementioned approaches, we successfully demonstrate a D2 ILFD implemented in the 90-nm low-power CMOS technology with a maximum LR of 90.9% at an injection power of 0 dBm. Even with the injection power as low as -10 dBm, the proposed ILFD maintains an LR of 32.9%. This ILFD consumes 2.4 mW with a supply voltage of 0.6 V in a chip size of 0.45 mm 2 .

A low-voltage, low power divide-by-4 LC-tank injection-locked frequency divider

A low-voltage wide locking range injection-locked frequency divider (ILFD) using a standard 0.18 µm complementary metal-oxide-semiconductor process is presented. The ILFD is based on a differential LC VCO with one injection metal oxide semiconductor field effect transistor (MOSFET) for coupling external signals to the resonator. The low-voltage operation and wide locking range is obtained by boosting the gate voltage swing of the ILFD. Measurements show that at the supply voltage of 0.67 V, the divider's free-running frequency is tunable from 3.91 to 4.22 GHz, and the core power consumption is 1.87 mW. At the incident power of 0 dBm the divide-by-4 operation range is about 2 GHz (12.3%), from the incident frequency 15.3–17.3 GHz. The divide-by-2 locking range is about 5.1 GHz (77%), from the incident frequency 4.1–9.2 GHz.

A 53-67 GHz low power and wide locking range injection-locked frequency divider with forward body bias

A 53–67 GHz wide locking range injection-locked frequency divider (ILFD) has been designed and fabricated using 0.13-μm CMOS process.By using forward body bias technique, the proposed ILFD demonstrates good performance of the wide locking range while maintaining low DC power consumption. Via a 0 dBm incident signal power, an input locking rage greater than 14 GHz (>23%) is achieved with 4 mW from supply voltage of 0.8 V. If the supply voltage further reduces to 0.6 V, the input locking rage is 6 GHz (10%) while consuming only 1.2 mW. Compared to previous reported works in high-speed CMOS FD, the presented ILFD achieves superior figure of merit (FOM). Without extra voltage control mechanisms to increase the locking range, this FD covers whole 57–64 GHz band is suitable for integration into a 60 GHz WPAN phase-locked loop system. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1386–1389, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25989

LC-Tank Colpitts Injection-Locked Frequency Divider With Record Locking Range

A new wide locking range injection-locked frequency divider (ILFD) using a standard 0.18-mum CMOS process is presented. The ILFD is based on a differential voltage controlled oscillator (VCO) with two embedded injection metal oxide semiconductor field effect transistors (MOSFETs) for coupling external signal to the resonators. The new VCO is composed of two single-ended VCOs coupled with cross-coupled MOSFETs and a transformer. Measurement results show that at the supply voltage of 1.5 V, the divider's free-running frequency is tunable from 5.85 to 6.17 GHz, and at the incident power of 0 dBm the locking range is about 7.1 GHz (65.4%), from the incident frequency 7.3 to 14.4 GHz. The ILFD has a record locking range percentage among published divide-by-2 .LC-tank ILFDs.

A wide locking range and low Voltage CMOS direct injection-locked frequency divider

A low voltage and wide locking range injection-locked frequency divider using a standard 0.18-μm complementary metal oxide semiconductor (CMOS) process is presented. The wide locking range and the low-voltage operation are performed by adding an injection nMOS between the differential outputs of the divider that contains on-chip transformers which result in positive feedback loops to swing the output signals above the supply and below the ground potential. This dual-swing capability maximizes the carrier power and achieves low-voltage performance. The measurement results show that at the supply voltage of 0.75-V, the divider free-running frequency is 2.02 GHz, and at the incident power of 0 dBm the locking range is about 1.49 GHz (36.88%), from the incident frequency 3.27 to 4.64GHz.