Abstract
A low-voltage wide locking range injection-locked frequency divider (ILFD) using a standard 0.18 µm complementary metal-oxide-semiconductor process is presented. The ILFD is based on a differential LC VCO with one injection metal oxide semiconductor field effect transistor (MOSFET) for coupling external signals to the resonator. The low-voltage operation and wide locking range is obtained by boosting the gate voltage swing of the ILFD. Measurements show that at the supply voltage of 0.67 V, the divider's free-running frequency is tunable from 3.91 to 4.22 GHz, and the core power consumption is 1.87 mW. At the incident power of 0 dBm the divide-by-4 operation range is about 2 GHz (12.3%), from the incident frequency 15.3–17.3 GHz. The divide-by-2 locking range is about 5.1 GHz (77%), from the incident frequency 4.1–9.2 GHz.
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