A theoretical investigation has been carried out on several group III−V (13−15) four-membered-ring compounds which, if experimentally attainable, are potentially useful as precursors to nanocrystalline electronic and semiconductor materials. Four-membered-ring compounds considered in this study have core structures of the following form: MEM‘E‘ and MEMX (M, M‘ = In, Ga, Al; E, E‘ = P, As; X = Cl, Br). Equilibrium geometries, binding energies, and bond energies were determined based on local density approximation (LDA) and gradient-corrected density-functional methods. Optimized ring geometries obtained with LDA agree closely with single-crystal X-ray crystallographic structures of known compounds with the same four-membered-ring cores. The following trends in bond energies are observed: M−Cl ≫ M−P > M−As ≫ M−Br (M = In, Ga, Al), and Al−Y > Ga−Y > In−Y (Y = P, As, Cl, Br). Although only one M−Br-containing mixed-bridge four-membered-ring compound has been reported and no such Al−Cl-containing mixed-bridg...
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