Lead Zirconate Titanate Thin Films Research Articles

Semiconductive lead zirconate titanate thin films grown by pulsed laser deposition

Semiconductive lead zirconate titanate thin films grown by pulsed laser deposition

Substrate dependence of the self-heating in lead zirconate titanate (PZT) MEMS actuators

Lead zirconate titanate (PZT) thin films offer advantages in microelectromechanical systems (MEMSs) including large motion, lower drive voltage, and high energy densities. Depending on the application, different substrates are sometimes required. Self-heating occurs in the PZT MEMS due to the energy loss from domain wall motion, which can degrade the device performance and reliability. In this work, the self-heating of PZT thin films on Si and glass and a film released from a substrate were investigated to understand the effect of substrates on the device temperature rise. Nano-particle assisted Raman thermometry was employed to quantify the operational temperature rise of these PZT actuators. The results were validated using a finite element thermal model, where the volumetric heat generation was experimentally determined from the hysteresis loss. While the volumetric heat generation of the PZT films on different substrates was similar, the PZT films on the Si substrate showed a minimal temperature rise due to the effective heat dissipation through the high thermal conductivity substrate. The temperature rise on the released structure is 6.8× higher than that on the glass substrates due to the absence of vertical heat dissipation. The experimental and modeling results show that the thin layer of residual Si remaining after etching plays a crucial role in mitigating the effect of device self-heating. The outcomes of this study suggest that high thermal conductivity passive elastic layers can be used as an effective thermal management solution for PZT-based MEMS actuators.

Design and Implementation of a Four-Unit Array Piezoelectric Bionic MEMS Vector Hydrophone.

High-performance vector hydrophones have been gaining attention for underwater target-monitoring applications. Nevertheless, there exists the mutual constraint between sensitivity and bandwidth of a single hydrophone. To solve this problem, a four-unit array piezoelectric bionic MEMS vector hydrophone (FPVH) was developed in this paper, which has a cross-beam and a bionic fish-lateral-line-nerve-cell-cilia unit array structure. Simulation analysis and optimization in the design of the bionic microstructure have been performed by COMSOL 6.1 software to determine the structure dimensions and the lead zirconate titanate (PZT) thin film distribution. The FPVH was manufactured using MEMS technology and tested in a standing wave bucket. The results indicate that the FPVH has a sensitivity of up to -167.93 dB@1000 Hz (0 dB = 1 V/μPa), which is 12 dB higher than that of the one-unit piezoelectric MEMS vector hydrophone (OPVH). Additionally, the working bandwidth of the FPVH reaches 20 Hz~1200 Hz, exhibiting a good cosine curve with an 8-shape. This work paves a new way for the development of multi-unit piezoelectric vector hydrophones for underwater acoustic detectors.

Plasmonic electro-optic modulators on lead zirconate titanate platform

Abstract The advancement in material platforms exhibiting strong and robust electro-optic effects is crucial for further progress in developing highly efficient and miniaturized optoelectronic components with low power consumption for modern optical communication systems. In this work, we investigate thin-film lead zirconate titanate (PZT) substrates grown by a chemical solution deposition technique as a potential platform for on-chip plasmonic electro-optic modulators. A high modulation depth (>40 %) is achieved with 15 μm-long electro-optic directional coupler modulators. An unusual cutoff in the modulation frequency response at ∼200 kHz is observed and further studied with respect to possible reorientation effects. Second-harmonic generation signals are found influenced by the externally applied electric field, indicating that the domain reorientation effect can be responsible for the unusual frequency response observed.

Mixed-Transducer Micro-Origami for Efficient Motion and Decoupled Sensing.

This work introduces a mixed-transducer micro-origami to achieve efficient vibration, controllable motion, and decoupled sensing. Existing micro-origami systems tend to have only one type of transducer (actuator/sensor), which limits their versatility and functionality because any given transducer system has a narrow range of advantageous working conditions. However, it is possible to harness the benefit of different micro-transducer systems to enhance the performance of functional micro-origami. More specifically, this work introduces a micro-origami system that can integrate the advantages of three transducer systems: strained morph (SM) systems, polymer based electro-thermal (ET) systems, and thin-film lead zirconate titanate (PZT) systems. A versatile photolithography fabrication process is introduced to build this mixed-transducer micro-origami system, and their performance is investigated through experiments and simulation models. This work shows that mixed-transducer micro-origami can achieve power efficient vibration with high frequency, large vibration ranges, and little degradation; can produce decoupled folding motion with good controllability; and can accomplish simultaneous sensing and actuation to detect and interact with external environments and small-scale samples. The superior performance of mixed-transducer micro-origami systems makes them promising tools for micro-manipulation, micro-assembly, biomedical probes, self-sensing metamaterials, and more.

Closely Packed Stretchable Ultrasound Array Fabricated with Surface Charge Engineering for Contactless Gesture and Materials Detection.

Communication with hand gestures plays a significant role in human-computer interaction by providing an intuitive and natural way for humans to communicate with machines. Ultrasound-based devices have shown promising results in contactless hand gesture recognition without requiring physical contact. However, it is challenging to fabricate a densely packed wearable ultrasound array. Here, a stretchable ultrasound array is demonstrated with closely packed transducer elements fabricated using surface charge engineering between pre-charged 1-3 Lead Zirconate Titanate (PZT) composite and thin polyimide film without using a microscope. The array exhibits excellent ultrasound properties with a wide bandwidth (≈57.1%) and high electromechanical coefficient (≈0.75). The ultrasound array can decipher gestures up to 10cm in distance by using a contactless triboelectric module and identify materials from the time constant of the exponentially decaying impedance based on their triboelectric properties by utilizing the electrostatic induction phase. The newly proposed metric of the areal-time constant is material-specific and decreases monotonically from a highly positive human body (1.13 m2s) to negatively charged polydimethylsiloxane (PDMS) (0.02 m2s) in the triboelectric series. The capability of the closely packed ultrasound array to detect material along with hand gesture interpretation provides an additional dimension in the next-generation human-robot interaction.

An Influence of Mechanical Stresses on the Magnitude of the Internal Field in Lead Zirconate Titanate Thin Films

An Influence of Mechanical Stresses on the Magnitude of the Internal Field in Lead Zirconate Titanate Thin Films

Integrated heterodyne laser Doppler vibrometer based on stress-optic frequency shift in silicon nitride

We demonstrate a compact heterodyne Laser Doppler Vibrometer (LDV) based on the realization of optical frequency shift in the silicon nitride photonic integration platform (TriPleX). We theoretically study, and experimentally evaluate two different photonic integrated optical frequency shifters (OFSs), utilizing serrodyne and single-sideband (SSB) modulation. Both OFSs employ stress-optic modulators (SOMs) based on the non-resonant piezoelectrical actuation of lead zirconate titanate (PZT) thin-films, deposited on top of the silicon nitride waveguides with a wafer-scale process. To improve the modulation bandwidth of the SOMs we investigate a novel configuration of the electrodes used for the actuation, where both electrodes are placed on top of the PZT layer. Using this top-top electrode configuration we report frequency shift of 100 kHz and 2.5 MHz, and suppression ratio of the unwanted sidebands of 22.1 dB and 39 dB, using the serrodyne and the SSB OFS, respectively. The best performing SOM structure induces 0.25π peak-to-peak sinusoidal phase-shift with 156 mW power dissipation at 2.5 MHz. We use the SSB-OFS in our compact LDV system to demonstrate vibration measurements in the kHz regime. The system comprises a dual-polarization coherent detector built in the PolyBoard platform, utilizing hybrid integration of InP photodiodes (PDs). High quality LDV performance with measurement of vibration frequencies up to several hundreds of kHz and displacement resolution of 10 pm are supported with our system.

Rare Earth Doped Lead Zirconate Titanate Thin Films for Memory and Power Device Applications

We fabricated thin films of (PbZr0.53Ti0.47)O3 (PZT) and (PbZr0.53Ti0.47)0.90(LaxSc1-x)0.10O3 where; x= 0, 0.2, 0.4, 0.6 and 0.8 denoted as [abbr. PL10x] PL0, PL2, PL4, PL6, and PL8 respectively on the LSMO buffer layer (bottom electrode) by using a PLD technique. The X-ray diffraction peaks show a single-phase perovskite structure of thin films with a preferred (100) orientation that coincides with the MgO and has tetragonal phase symmetry (P4mm). Pt electrodes were deposited at the top of thin films as top electrodes. We achieved higher dielectric permittivity (ε’) for PL0 and PL6 compared to other compositions. We noticed that the role of increasing lanthanum content (decreasing scandium) resulted in the broadening of ε’ with temperature and ferroelectric phase transition decreased to 450 K. However, the scandium doping alone (PL0) didn’t lower the ferroelectric phase transition. We analyzed the temperature-dependent ε’ using the modified Curie-Weiss law. The PL0, PL6, and PL8 thin film capacitors exhibited relaxor ferroelectric properties that were further supported by the Vogel-Fulcher relation.The P-E hysteresis loops exhibited the role of lanthanum and scandium causing compositional changes in coercive fields. The P-E loops of PZT, PL2, and PL4 exhibited typical ferroelectric features. Whereas, PL0, PL6, and PL8 showed a relaxor ferroelectric behavior which was corroborated by the analysis of the dielectric data. The PL0 and PL6 thin films showed better spontaneous polarization Ps. We achieved superior energy storage performance Ure = 54.63 J/cm3 with η ~ 70% for PL0 and Ure = 26.54 J/cm3 with η ~ 66% for PL8 thin film capacitors. The study demonstrated the idea that by tuning La3+ and Sc3+ the dielectric and ferroelectric properties of thin films can be controlled for suitable electronic applications, such as memory, power devices, and energy storage.

High frequency characterization of PZT thin-films deposited by chemical solution deposition on SOI for integrated high speed electro-optic modulators

The increasing demand for high data rates and low power consumption puts silicon photonics at the edge of its capabilities. The heterogeneous integration of optical ferro-electric materials on silicon enhances the functionality of the silicon on insulator (SOI) platform to meet these demands. Lead zirconate titanate (PZT) thin films with a large Pockels coefficient and good optical quality can be directly integrated on SOI waveguides for fast electro-optic modulators. In this work, the relative permittivity and dielectric loss of PZT thin films deposited by chemical solution deposition on SOI substrates are analyzed at high frequencies. We extract ε r =1650−2129 and tan (δ) = 0.170 − 0.209 for the PZT thin films in the frequency range 1-67GHz. We show the possibility of achieving bandwidths beyond 60GHz via a Mach-Zehnder modulator with V π = 7V, suitable for next generation data communication systems.

Influence of doping and thickness on domain avalanches in lead zirconate titanate thin films

In undoped lead zirconate titanate films of 1–2 μm thick, domain walls move in clusters with a correlation length of approximately 0.5–2 μm. Band excitation piezoresponse force microscopy mapping of the piezoelectric nonlinearity revealed that niobium (Nb) doping increases the average concentration or mobility of domain walls without changing the cluster area of correlated domain wall motion. In contrast, manganese (Mn) doping reduces the contribution of mobile domain walls to the dielectric and piezoelectric responses without changing the cluster area for correlated motion. In both Nb and Mn doped films, the cluster area increases and the cluster density drops as the film thickness increases from 250 to 1250 nm. This is evident in spatial maps generated from the analysis of irreversible to reversible ratios of the Rayleigh coefficients.

Influence of the intermediate oxidation layer on the characteristics of lead zirconate titanate thin films with aluminium substrate

This paper presents a flexible piezoelectric device that has been realized by depositing lead zirconate titanate (PZT) thin films by chemical solution deposition (CSD) on a commercial aluminum foil as a substrate. The thermal treatment required for the crystallization of the PZT thin films leads to the oxidation of the substrate and a parasitic intermediate layer of alumina (Al2O3) is formed between the substrate and the first PZT layer. The comparison with and without the use of a conductive ruthenium dioxide (RuO2) interlayer, which can shunt the insulating alumina layer, showed the influence of the latter on the different characteristics of the material. The thickness of the alumina layer on the surface of the aluminum substrate after deposition of the PZT film (≈ 39 nm) was determined by calculation and confirmed by transmission electron microscopy (TEM). Dielectric characterization of the sample without considering this layer gives the permittivity of the Al2O3/PZT bilayer and not the active material alone (PZT). A relative permittivity value of 313 is measured against 558 for the single PZT layer if the alumina layer is taken into account, which means a decrease of 44%. The piezoelectric characterization is also influenced by the alumina layer, the piezoelectric coefficient is 14 pC/N while it is 26 pC/N when this layer is taken into account. This study evidences and quantitatively evaluates the influence of the oxidation layer (Al2O3) on the dielectric and piezoelectric characteristics and mechanical energy harvesting performances.

On the design of piezoelectric actuator for 1D MEMS scanning mirror applications

This study presents the design, implementation, and characterization of 1D resonant type micro-electro-mechanical-systems (MEMS) piezoelectric scanning mirrors with different actuator designs to investigate their influences on the figure of merits (FoMs) for automotive light detection and ranging application. The MEMS scanning mirrors are driven by lead zirconate titanate (PZT) thin film in this study owing to its outstanding piezoelectric properties. Three different beam-type piezoelectric actuators are designed, including the reference meander straight-beam actuator design, and the proposed meander curved-beam and straight-curved tapered beam actuator designs. Simulations show the scan angle enhancement for two proposed designs, yet the resonant scanning frequency of meander curved-beam design dropped to below the 2 kHz requirement. To evaluate the designs, scanning mirrors with two proposed actuators are fabricated and tested. Measurements show that the resonant frequencies for the two proposed MEMS scanning mirrors are 1735 Hz and 2578 Hz, respectively. Two proposed designs respectively have the maximum optical angles of 48.1° and 50.6° at the 20 Vpp driving voltage. Due to the much higher stress on the beam structure induced by the misalignment of PZT film, the actuator could not reach the predicted scanning angle of near 80°. In comparison of the two proposed designs, the straight-curved tapered beam actuator design could enhance the FoM for about 56%. In summary, the performances of piezoelectric MEMS scanning mirror can be improved by varying the designs of length and shape of actuator, and the distribution of PZT film on the suspended actuator is also a critical design concern.

Микроструктура сферолитовых тонких пленок цирконата-титаната свинца

The features of the microstructure of radiant spherulites in lead zirconate titanate thin films are studied using scanning electron and nonlinear optical microscopy by varying the blocks size of the perovskite structure. It is shown that with an increase in the radius of the spherulite (or the size of blocks), the angle of rotation of the growth axis increases, the speed of the angle of rotation, and the magnitude of the signal of the second optical harmonic It is assumed that the reasons determining specifics of the structure and signal of the second optical harmonic are associated with a change in the magnitude of mechanical stresses in the films that arise due to a change in the phase density at perovskite phase crystallization from low-temperature pyrochlore phase or at perovskite phase recrystallization

Ferroelectric properties of lead zirconate titanate thin films obtained by RF magnetron sputtering near the morphotropic phase boundary

An experimental study of the crystal structure and ferroelectric properties of <110>-textured lead zirconate titanate films with a fine variation in their composition (with a change in the elemental ratio of zirconium and titanium atoms within 1.5%) near the morphotropic phase boundary revealed jump-like changes in the pseudocubic lattice parameter, dielectric permittivity and residual polarization. It is assumed that the observed anomalies correspond to a morphotropic transition from a rhombohedral to a mixture of tetragonal and monoclinic phases. Keywords: fine composition variation, phase state, piezoresponse force microscopy, abnormal dielectric and piezoelectric properties.

Increased fatigue resistance in transparent lead zirconate titanate thin films with interdigitated electrodes

This work compares the fatigue behavior of fully transparent lead zirconate titanate films with a composition at the morphotropic phase boundary on fused silica glass or sapphire, respectively, fitted with coplanar interdigitated top electrodes and no bottom electrodes to that of the same systems in a traditional metal–insulator–metal parallel plate capacitor geometry. While the polarization hysteresis in the latter geometry decreases rapidly during bipolar electrical cycling, systems with coplanar electrodes show no notable fatigue up to 107 cycles. The difference is explained based on the columnar microstructure of the films: for coplanar electrode geometries, the grain boundaries of the columnar structure act as trapping sites for oxygen vacancies, preventing the build-up of agglomerates that cause fatigue by domain wall pinning.

Design and characterization of a pyroelectric detector based on three-dimensional structured hafnium oxide thin films

Pyroelectric detectors are used for gas analysis and flame detection because of their fast response and excellent performance. Most pyroelectric devices are based on monocrystalline lithium tantalate or pyroelectric lead zirconate titanate thin films deposited on a silicon (Si) substrate. In comparison, recently discovered pyroelectric-doped hafnium oxide (HfO2) offers the possibility of manufacturing completely complementary metal-oxide-semiconductor (CMOS)-compatible devices on large Si wafers. This is a promising approach to simplifying mass production of the sensor element and realizing new sensor structures with a high performance. Si substrates were structured with trenches and filled with thin-doped HfO2 layers by atomic layer deposition to multiply the pyroelectric current responsivity. An effective pyroelectric coefficient of up to 1300 μC / m2 / K was measured. Micromechanical structuring of the 6-in Si wafers was used to improve the thermal conversion of the sensor element. The applied plasmonic absorbers increase the infrared light absorption to >80 % for the spectral range of 3 to 5 μm, which was determined using Fourier transform infrared reflection measurements. In the first step, the performance of the sensor element was evaluated with an analog transimpedance amplifier with a feedback resistance of 5 GΩ. A specific detectivity D * > 1 · 107 cm√Hz / W was measured for the frequency range of 1 to 10 Hz. In addition, an application-specific integrated circuit was designed for the electrical signal conditioning to build a fully CMOS-compatible pyroelectric detector. It offers a simple to manufacture, flexible configuration, and digital communication interface with a signal-to-noise performance close to analog detectors. We present the measurement results of different sensor elements and detector types.

Experimental investigation of rotating nodal line of MEMS-based nonlinear multi-mode resonators.

Nonlinear phenomenon is presently attracting considerable attention in the field of microelectromechanical systems (MEMS). By adjusting a controllable tuning voltage, the nonlinearity of microdevices, especially on microactuators, can be precisely manipulated. To trap and separate small particles, generating a large and stable rotation force is critical in micromanipulations. Here, we report a simple and potential angular momentum cell comprising a piezoelectric MEMS-based nonlinear multi-mode resonator with integrated electrodes. A nonlinear rotating nodal line has been observed in specific frequency bands by applying a controllable low voltage of sub 5V on a 4-port resonator made of lead zirconate titanate (PZT) thin films. The magnitude of the actuated voltage is Complementary-Metal-Oxide-Semiconductor (CMOS)-compatible and easy to integrate with the circuit. Furthermore, the real-time rotation motion of the MEMS-based nonlinear multi-mode resonator is also verified by a laser doppler vibrometer (LDV) at both chirp and single input frequencies, respectively. Therefore, this angular momentum cell shows great potential in the application of micromanipulation.

Effect of Mg-doping and Fe-doping in lead zirconate titanate (PZT) thin films on electrical reliability

Uniformly acceptor doped Pb(Zr0.48Ti0.52)O3 (PZT) films with 2 mol. % Mg or Fe prepared by chemical solution deposition exhibited decreased dielectric constants and remanent polarizations relative to undoped PZT. For highly accelerated lifetime testing (HALT) at 200 °C and an electric field of 300 kV/cm in the field up direction, the HALT lifetimes (t50) for undoped, Mg-doped, and Fe-doped PZT films were shortened from 2.81 ± 0.1 to 0.21 ± 0.1 and 0.54 ± 0.04 h, respectively. Through thermally stimulated depolarization current measurement, significant VO∙∙ electromigration was found in homogeneously Mg-doped PZT thin films, a major factor in their short HALT lifetime. Because the concentration of oxygen vacancies increases with uniform acceptor doping, the lifetime decreases. In contrast, when a thin layer of Mg-doped or Fe-doped PZT was deposited on undoped PZT or Nb-doped PZT (PNZT), the HALT lifetimes were longer than those of pure PZT or PNZT films. This confirms prior work on PNZT films with a Mn-doped top layer, demonstrating that the HALT lifetime increases for composite films when a layer with multivalent acceptors is present near the negative electrode during HALT. In that case, the compensating electrons are trapped, presumably on the multivalent acceptors, thus increasing the lifetime.

Control of Self-Polarization in Doped Single Crystalline Pb(Zr0.5Ti0.5)O3 Thin Films

We report the control of self-polarization of monocrystalline Lead Zirconate Titanate thin films grown by Pulsed laser deposition by doping and bottom interface. Doped and undoped films grown on ScO2 terminated surface of polar PSO substrate have developed polarization oriented toward the substrate due to negative polarity (ScO−) of the substrate termination. For films grown on the strontium ruthenate (SRO) bottom electrode, only undoped and 1% Nb doped PZT films have developed upwards oriented self-polarization. The introduction of strontium ruthenate bottom electrode have made the work function difference between films and bottom electrode to be the dominant mechanism for self-polarization.