Lateral Barrier Research Articles

The effect of Cu-doping to the DLC interlayer on the temperature dependent current-conduction mechanisms and barrier shape of the Schottky devices

The objective of this study is to determine the temperature and voltage-dependent current conduction mechanisms (CCMs) of the Al/Cu-doped DLC/p-Si Schottky device. It is aimed to obtain extensive and detailed data by current-voltage (I–V) measurements taken with 0.3 V voltage steps in the ±4 V voltage range, at 30 K intervals from 80 K to 410 K. Firstly, an examination of the semi-logarithmic I–V curve revealed that the low temperature (LTs, 80 K–170 K), medium temperature (MTs, 200 K–290 K) and high temperature (HTs, 320 K–410 K) regions should be examined separately. The basic parameters of the Schottky device such as the ideality factor (n), reverse saturation current (Io) and zero-biasing potential barrier height (ΦBo) were obtained separately for LTs, MTs and HTs by the Thermionic Emission (TE) theory. The results obtained show that the device deviates from ideality, especially in LTs and HTs, and the n values decrease with increasing temperature, while the ΦBo values increase. The analysis of the presence of other CTMs in the Schottky device revealed that Field Emission (FE) and Thermionic Field Emission (TFE) were effective in LTs and MTs, while FE was effective in HTs. Since it is thought that quantum mechanical CTMs cannot be the cause of such a deviation from ideality due to the interface layer thickness, the existence of Gaussian Distribution originating from lateral barrier inhomogeneity was investigated. As a result, it is concluded that the Multiple Gaussian Distribution (MGD) is dominant in the possible CTMs of the Schottky device.

A patient-derived amyotrophic lateral sclerosis blood-brain barrier model for focused ultrasound-mediated anti-TDP-43 antibody delivery

BackgroundAmyotrophic lateral sclerosis (ALS) is a rapidly progressing neurodegenerative disorder with minimally effective treatment options. An important hurdle in ALS drug development is the non-invasive therapeutic access to the motor cortex currently limited by the presence of the blood-brain barrier (BBB). Focused ultrasound and microbubble (FUS+ MB) treatment is an emerging technology that was successfully used in ALS patients to temporarily open the cortical BBB. However, FUS+ MB-mediated drug delivery across ALS patients’ BBB has not yet been reported. Similarly, the effects of FUS+ MB on human ALS BBB cells remain unexplored.MethodsHere we established the first FUS+ MB-compatible, fully-human ALS patient-cell-derived BBB model based on induced brain endothelial-like cells (iBECs) to study anti-TDP-43 antibody delivery and FUS+ MB bioeffects in vitro.ResultsGenerated ALS iBECs recapitulated disease-specific hallmarks of BBB pathology, including reduced BBB integrity and permeability, and TDP-43 proteinopathy. The results also identified differences between sporadic ALS and familial (C9orf72 expansion carrying) ALS iBECs reflecting patient heterogeneity associated with disease subgroups. Studies in these models revealed successful ALS iBEC monolayer opening in vitro with no adverse cellular effects of FUS+ MB as reflected by lactate dehydrogenase (LDH) release viability assay and the lack of visible monolayer damage or morphology change in FUS+ MB treated cells. This was accompanied by the molecular bioeffects of FUS+ MB in ALS iBECs including changes in expression of tight and adherens junction markers, and drug transporter and inflammatory mediators, with sporadic and C9orf72 ALS iBECs generating transient specific responses. Additionally, we demonstrated an effective increase in the delivery of anti-TDP-43 antibody with FUS+ MB in C9orf72 (2.7-fold) and sporadic (1.9-fold) ALS iBECs providing the first proof-of-concept evidence that FUS+ MB can be used to enhance the permeability of large molecule therapeutics across the BBB in a human ALS in vitro model.ConclusionsTogether, this study describes the first characterisation of cellular and molecular responses of ALS iBECs to FUS+ MB and provides a fully-human platform for FUS+ MB-mediated drug delivery screening on an ALS BBB in vitro model.

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (η) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage (BV) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.

Lateral 1200V SiC schottky barrier diode with single event burnout tolerance

For a power device to be used in space, it must be able to recover from a single event effect caused by heavy ion radiation. Conventional vertical silicon carbide (SiC) power devices such as automotive diodes and MOSFETs, can only meet this requirement if they are heavily derated, a 1200 V device typically unusable above 200 V. In this paper, a lateral RESURF Schottky diode has been designed in TCAD simulation using a radiation-hard (rad-hard) by design methodology. By preventing anode-to-cathode shorting that occurs in a vertical drift region, the lateral design is shown to recover after a heavy ion traverses the device with a linear energy transfer (LET) of 60 MeV·cm2/mg, while the device is blocking 1200 V. The design splits the drift region into a higher doping zone closer to the cathode (Zone 2) of 1.5×1017 cm−3 and a lower doping zone closer to the anode (Zone 1) of 1×1016 cm−3. The electric field spikes were reduced while the device was recovering. This design keeps the local temperature in the device to under 1000 K if the heavy ion penetrates the device in a direction perpendicular to the surface. Other entry positions and directions are also simulated and a maximum temperature of 1733 K occurs when the ion path is horizontal, entering at 1 μm below the surface. However, this temperature peak occurs at the cathode, which is not expected to lead to lasting leakage damage. A deep P+ pillar embedded into the anode acts as a collector for holes generated during the single event. Simulations show that a deeper P+ pillar, to a depth of up to 5 μm, reduces the hole density in the N-drift region and P-epi layer during recovery. This also allows the Zone 1 doping to be increased to as much as 5×1016 cm−3, thereby reducing on-state losses.

The role of the most cranial trochlear orientation in patellar maltracking to better characterise trochlear morphology.

The purpose of our study is to describe a magnetic resonance imaging quantitativeparameter to assess the morphology of the trochlea that could be measurable from normal to high-grade trochlear dysplasia while evaluating the most proximal slice with trochlear cartilage. Two groups of patients have been compared: patients with no patellofemoral pain, no previous trauma and undergoing surgery for a suspected isolated meniscal tears (group A) and patients with objective patellar instability (group B). The cranial trochlear orientation (CTO) angle is defined as the angle between the posterior bicondylar line and the most lateral and most medial points on the subchondral bone covered by cartilage digitised on the first and most cranial image with the trochlear cartilage clearly visible. The final cohort included 253 patients (109 in group A and 144 in group B). CTO was significantly higher in group B (-2.5 ± 8.4 vs. -10.8 ± 5,1; p < .001). Moreover, 75% of knees in group B had a CTO > -7°, while 75% of knees in group A had a CTO < -7°. CTO was measurable in all 253 knees, whereas the lateral trochlear inclination and the sulcus angle were measurable in only 202 knees. The entire cohort was also divided into knees with CTO ≤ 0° and CTO > 0°. All knees with a CTO > 0 were in group B, and 49% of knees with CTO < 0 were in group B. CTO was positively correlated with lateral patellar tilt. CTO is the only parameter that can be measured on the most cranial slice, in every patient, even in high-grade trochlear dysplasia. According to this new system, the axial trochlear shape may be divided into two types: a positive CTO and a negative CTO, with the trochlea serving, respectively, as a medial and lateral barrier. Level III.

Effect of lateral inhomogeneous AlGaN barrier layer on electronic properties of GaN HEMTs

In this study, an AlGaN/GaN high electron mobility transistor with lateral inhomogeneous AlGaN barrier layer (LI-AlGaN HEMT) is proposed and studied systematically. The LI-AlGaN HEMT comprises three AlGaN regions with varying Al content, connected to the source, gate, and drain, respectively. With the increase of Al content in each region, the saturation current of the LI-AlGaN HEMT increases gradually, while the on-resistance (Ron) and breakdown voltage (BV) decrease. The threshold voltage (Vth) of the LI-AlGaN HEMT depends only on the Al content of AlGaN beneath the gate. By introducing the source field plate (FP), the calculated output current of the conventional FP-HEMT is consistent with the experimental data. After optimizing Al content, the LI-AlGaN FP-HEMT has the same Vth compared with conventional FP-HEMT. However, the saturation current is increased by approximately 20 % and the Ron is decreased by approximately 30 %. Additionally, the BV is increased to 1008 V. So the optimized lateral inhomogeneous AlGaN HEMT has better DC characteristics and is suitable for high power GaN device applications.

Machine Learning to Promote Efficient Screening of Low-Contact Electrode for 2D Semiconductor Transistor Under Limited Data.

Low-barrier and high-injection electrodes are crucial for high-performance (HP) 2D semiconductor devices. Conventional trial-and-error methodologies for electrode material screening are impractical because of their low efficiency and arbitrary specificity. Although machine learning has emerged as a promising alternative to tackle this problem, its practical application in semiconductor devices is hindered by its substantial data requirements. In this paper, a comprehensive scheme combining an autoencoding regularized adversarial neural network and a feature-adaptive variational active learning algorithm for screening low-contact electrode materials for 2D semiconductor transistors with limited data is proposed. The proposed scheme exhibits exceptional performance by training with only 15% of the total data points, where the mean square errors are 0.17 and 0.27eV for the vertical and lateral Schottky barrier, respectively, and 2.88% for tunneling probability. Further, it exhibits an optimal predictive performance for 100 randomly sampled training datasets, reveals the underlying physical insight based on the identified features, and realizes continual improvement by employing detailed density-of-states descriptors. Finally, the empirical evaluations of the transport characteristics are conducted and verified by constructing MOSFET devices. These findings demonstrate the considerable potential of machine-learning techniques for screening high-efficiency electrode materials and constructing HP 2D semiconductor devices.

Study of optical float-zone grown gallium oxide Schottky barrier diode

β−Ga2O3 based lateral Schottky barrier diodes are fabricated using Ni/Au as Schottky contact and Ti/Au as Ohmic contact. The Sn-doped β−Ga2O3 sample is grown by the optical float-zone technique. The effect of trenches, which are used for mesa isolation, on breakdown voltage is investigated. The device shows near-ideal characteristics in terms of built-in potential. The parasitic series and shunt resistances are extracted, and their dependency on temperature is established. Modeling of temperature-dependent reverse leakage current is demonstrated using the thermionic emission model, Poole–Frenkel emission model, and Fowler-Nordheim tunneling mechanism. The procedure to extract relevant parameters is explained in terms of bias and temperature dependency. The combined model shows excellent agreement with experimental data over a wide range of bias and temperature. The maximum electric field of 2.3 MV cm−1 is achieved.

Computational Analysis of Hydro-Mechanical Interaction in Sponge City Infrastructure

Sponge cities are urban areas that absorb and use rainfall like a sponge, thereby reducing flood risk and replenishing groundwater. However, the water-mechanical interactions in these systems are still poorly understood. In this study, the computer simulation fluid dynamics (CFD) method and Fluent software were used to evaluate the influence of soil leakage on pavement structure under the background of sponge city, focusing on two different soil layers. The fluid-structure coupling was analyzed by computer, and the pore water pressure changed significantly when the coupling effect was considered by computer software. When the penetration rate is 0.01 cm/s, the growth of plastic zone of soil is the smallest. Due to the upward seepage force caused by soil swelling and lateral water barrier, the strain index of road displacement is increased by 15%. The corresponding conclusion is drawn, which has practical significance.

Theoretical study of susceptibility and effective mass in semiconductor quantum well-wires

The susceptibility and effective mass of electrons and hole vary as functions of carrier density and temperature in parabolic lateral barrier quantum-well wires (QWWRs). To investigate these properties, we utilize the leading-order dynamically screened Coulomb interaction, wherein the electron self-energy is calculated within the plasmon-pole approximation (PPA). All findings for GaAs QWWRs reveal a substantial difference between susceptibility and effective mass at low and high temperatures for varying carrier densities. These results contribute to illuminate of how Coulomb interactions and exchange–correlation energies influence the susceptibility and effective mass of GaAs semiconductors across a broad range of temperature and carrier density conditions.

Temperature dependent electron transport and interface state studies on Ni/n-Si/Al/Ag lateral Schottky junction

We investigate in this work,the electron transport characteristics across Ni/n-Si Schottky junctions from temperature dependent current–voltage (I-V-T) and capacitance–voltage (C-V-T) studies. Barrier height obtained from I–V measurements exhibited upsurge with increasing temperature, whereas, the ideality factor decreases with increasing temperature within the range of 300K–400K. To analyze electron transport mechanism, possibilities of Thermionic Field Emission and Generation-Recombination have been investigated over the temperature range, and, it has been observed that due to less characteristic energy at discussed temperature range; these effects have a minor contribution to electron transport. To account for the temperature-dependent properties and lateral barrier inhomogeneity, a double Gaussian spatial distribution of the potential barrier has been observed from conventional and modified Richardson plots. The density of Interface states at different energy levels from the conduction band has also been studied.

Fission-independent compartmentalization of mitochondria during budding yeast cell division.

Lateral diffusion barriers compartmentalize membranes to generate polarity or asymmetrically partition membrane-associated macromolecules. Budding yeasts assemble such barriers in the endoplasmic reticulum (ER) and the outer nuclear envelope at the bud neck to retain aging factors in the mother cell and generate naïve and rejuvenated daughter cells. However, little is known about whether other organelles are similarly compartmentalized. Here, we show that the membranes of mitochondria are laterally compartmentalized at the bud neck and near the cell poles. The barriers in the inner mitochondrial membrane are constitutive, whereas those in the outer membrane form in response to stresses. The strength of mitochondrial diffusion barriers is regulated positively by spatial cues from the septin axis and negatively by retrograde (RTG) signaling. These data indicate that mitochondria are compartmentalized in a fission-independent manner. We propose that these diffusion barriers promote mitochondrial polarity and contribute to mitochondrial quality control.

Rutile-type Ge x Sn1−x O2 alloy layers lattice-matched to TiO2 substrates for device applications

We report the characterization and application of mist-CVD-grown rutile-structured Ge x Sn1−x O2 (x = ∼0.53) films lattice-matched to isostructural TiO2(001) substrates. The grown surface was flat throughout the growth owing to the lattice-matching epitaxy. Additionally, the film was single-crystalline without misoriented domains and TEM-detectable threading dislocations due to the coherent heterointerface. Using the Ge0.49Sn0.51O2 film with a carrier density of 7.8 × 1018 cm−3 and a mobility of 24 cm2V−1s−1, lateral Schottky barrier diodes were fabricated with Pt anodes and Ti/Au cathodes. The diodes exhibited rectifying properties with a rectification ratio of 8.2 × 104 at ±5 V, showing the potential of Ge x Sn1-x O2 as a practical semiconductor.

Current-in-plane tunneling measurement of oxygen-functionalized few-layer boron nitride lateral barriers

A surface tunneling current measurement was used to study the electronic performance of hexagonal boron nitride (hBN) and surface-functionalized hBN in a variety of configurations and conditions.

Theoretical study of electron compressibility in semiconductor quantum wires

The compressibility was calculated of electrons as a function of external magnetic, temperature and carrier density in the parabolic lateral barrier quantum wires (QWRs). The compressibility found by using Seitz's theorem in which electron self-energy is calculated within the random-phase approximation. All results for GaAs QWRs show that a large difference between the compressibility in low- and high-temperature region at external magnetic fields. These results can help clarify how the Coulomb interaction and exchange, correlation energy affect the compressibility of the semiconductor across a wide range of density, temperature, and external magnetic.

Accelerating Quantum Decay by Multiple Tunneling Barriers.

A quantum particle constrained between two high potential barriers provides a paradigmatic example of a system sustaining quasi-bound (or resonance) states. When the system is prepared in one of such quasi-bound states, the wave function approximately maintains its shape but decays in time in a nearly exponential manner radiating into the surrounding space, the lifetime being of the order of the reciprocal of the width of the resonance peak in the transmission spectrum. Naively, one could think that adding more lateral barriers would preferentially slow down or prevent the quantum decay since tunneling is expected to become less probable and due to quantum backflow induced by multiple scattering processes. However, this is not always the case and in the early stage of the dynamics quantum decay can be accelerated (rather than decelerated) by additional lateral barriers, even when the barrier heights are arbitrarily large. The decay acceleration originates from resonant tunneling effects and is associated to large deviations from an exponential decay law. We discuss such a counterintuitive phenomenon by considering the hopping dynamics of a quantum particle on a tight-binding lattice with on-site potential barriers.

Enhanced temperature stability of threshold current of InAs/GaAs quantum dot lasers by AlGaAs lateral potential barrier layers.

We have investigated the incorporation of an AlGaAs lateral potential barrier layer (LPBL) as a novel approach to improve the temperature stability of the threshold current in InAs/GaAs quantum dot (QD) lasers. This layer serves to increase the energy separation (ΔE) between the ground and excited states of the QD while maintaining efficient vertical carrier injection. Theoretical calculations confirm that the LPBL is effective in increasing ΔE. The LPBLs were successfully formed using the preferential growth properties of AlGaAs induced by the non-uniform distribution of strain effects on the QD surface during molecular beam epitaxy growth. To confirm the usefulness of the LPBLs, we fabricated an InAs/GaAs QD laser incorporating AlGaAs LPBLs, demonstrating that the threshold current at 150°C was significantly reduced by 48% compared to a QD laser without LPBLs. The temperature stabilization achieved by incorporating the LPBLs provides a promising way for establishing high reliability and low power operation of QD lasers in high-temperature environments.

Attractors' Analysis and Bifurcation Diagrams for an Impacting Inverted Pendulum in the Presence of a Two-Terms Harmonic Excitation

Abstract In this work, we examine the nonlinear dynamics of an inverted pendulum between lateral rebounding barriers. We continue the numerical investigation started in (Demeio et al., 2006, “Response Scenario and Non-Smooth Features in the Nonlinear Dynamics of an Impacting Inverted Pendulum,” ASME J. Comput. Nonlin. Dyn., 1(1), pp. 56–64) by adding the contribution of the second harmonic in the external forcing term. We investigate the behavior of the periodic attractors by bifurcation diagrams with respect to each amplitude and by behavior charts of single attractors in the amplitude parameters plane for fixed frequency. We study the effects of the second harmonic term on the existence domain of each attractor, on local bifurcations, and on the changes in the basins of attraction. The behavior of some robust chaotic attractor is also considered. In the evolution of the periodic attractors we have observed that the addition of the second harmonic generates a rich variety of behaviors, such as loss of stability and formation of isolas of periodic orbits. In the case of chaotic attractors, we have studied one attractor at high frequency, ω = 18, and one at low frequency, ω = 3. In the high frequency case we detect a transition from a scattered to a confined attractor, whereas at the lower frequency the chaotic attractor is present over a wide range of the second harmonic's amplitude. Finally, we extend the investigation of the chaotic attractors by bifurcation diagrams with respect to the frequency.

On the Mechanism of Solvents Catalyzed Structural Transformation in Metal Halide Perovskites.

Metal halide perovskites show the capability of performing structural transformation, allowing the formation of functional heterostructures. Unfortunately, the elusive mechanism governing these transformations limits their technological application. Herein, the mechanism of 2D-3D structural transformation is unraveled as catalyzed by solvents. By combining a spatial-temporal cation interdiffusivity simulation with experimental findings, it isvalidated that, protic solvents foster the dissociation degree of formadinium iodide (FAI) via dynamic hydrogen bond, then the stronger hydrogen bond of phenylethylamine (PEA) cation with selected solvents compared to dissociated FA cation facilitates 2D-3D transformation from (PEA)2 PbI4 to FAPbI3 . It isdiscovered that, the energy barrier of PEA out-diffusion and the lateral transition barrier of inorganic slab are diminished. For 2D films the protic solvents catalyze grain centers (GCs) and grain boundaries (GBs) transforme into 3D phases and quasi-2D phases, respectively. While in the solvent-free case, GCs transform into 3D-2D heterostructures along the direction perpendicular to the substrate, and most GBs evolve into 3D phases. Finally, memristor devices fabricated using the transformed films uncover that, GBs composed of 3D phases are more prone to ion migration. This work elucidates the fundamental mechanism of structural transformation in metal halide perovskites, allowing their use to fabricate complex heterostructures.

Magnetic Field-Assisted Interface Embedding Strategy to Construct 2D/3D Composite Structure for Stable Perovskite Solar Cells with Efficiency Over 24.

Perovskite solar cells (PSCs) based on 2D/3D composite structure have shown enormous potential to combine high efficiency of 3D perovskite with high stability of 2D perovskite. However, there are still substantial non-radiative losses produced from trap states at grain boundaries or on the surface of conventional 2D/3D composite structure perovskite film, which limits device performance and stability. In this work, a multifunctional magnetic field-assisted interfacial embedding strategy is developed to construct 2D/3D composite structure. The composite structure not only improves crystallinity and passivates defects of perovskite layer, but also can efficiently promote vertical hole transport and provide lateral barrier effect. Meanwhile, the composite structure also forms a good surface and internal encapsulation of 3D perovskite to inhibit water diffusion. As a result, the multifunctional effect effectively improves open-circuit voltage and fill factor, reaching maximum values of 1.246V and 81.36%, respectively, and finally achieves power conversion efficiency (PCE) of 24.21%. The unencapsulated devices also demonstrate highly improved long-term stability and humidity stability. Furthermore, an augmented performance of 21.23% is achieved, which is the highest PCE of flexible device based on 2D/3D composite perovskite films coupled with the best mechanical stability due to the 2D/3D alternating structure.