The effect of Cu-doping to the DLC interlayer on the temperature dependent current-conduction mechanisms and barrier shape of the Schottky devices

Abstract

The objective of this study is to determine the temperature and voltage-dependent current conduction mechanisms (CCMs) of the Al/Cu-doped DLC/p-Si Schottky device. It is aimed to obtain extensive and detailed data by current-voltage (I–V) measurements taken with 0.3 V voltage steps in the ±4 V voltage range, at 30 K intervals from 80 K to 410 K. Firstly, an examination of the semi-logarithmic I–V curve revealed that the low temperature (LTs, 80 K–170 K), medium temperature (MTs, 200 K–290 K) and high temperature (HTs, 320 K–410 K) regions should be examined separately. The basic parameters of the Schottky device such as the ideality factor (n), reverse saturation current (Io) and zero-biasing potential barrier height (ΦBo) were obtained separately for LTs, MTs and HTs by the Thermionic Emission (TE) theory. The results obtained show that the device deviates from ideality, especially in LTs and HTs, and the n values decrease with increasing temperature, while the ΦBo values increase. The analysis of the presence of other CTMs in the Schottky device revealed that Field Emission (FE) and Thermionic Field Emission (TFE) were effective in LTs and MTs, while FE was effective in HTs. Since it is thought that quantum mechanical CTMs cannot be the cause of such a deviation from ideality due to the interface layer thickness, the existence of Gaussian Distribution originating from lateral barrier inhomogeneity was investigated. As a result, it is concluded that the Multiple Gaussian Distribution (MGD) is dominant in the possible CTMs of the Schottky device.