Shallow junction complementary metal oxide semiconductor (CMOS) structures (0.25 and 0.35 μm depth) were studied using sputter deposited Ti/TiN/AlSiCu and Ti/TiN/AlCu films for contact metallization. Single contact Van de Pauw patterns (to measure the breakdown voltage) as well as large junction area structures with multiple contact windows were used for electrical measurements. An increase in the RTA temperature used to silicide the contacts increased the Si consumption in the junctions and resulted in degradation of junctions yields. The thickness of the Ti layer had a larger influence on the stability of the junction than the thickness of the TiN layer (in the range of thicknesses studied). AlSi(0.75 wt%)Cu(0.5 wt%) films are more stable than AlCu(0.5 wt%) films for junction spiking. The AlCu films are more reactive, and the interdiffusion of Ti into the AlCu films makes the junctions less stable. The annealing temperature and post wafer fabrication is critical in maintaining stability of junctions. The junction depths, and dopants (BF 2- p- and As n-implanted) used in forming the junctions affect the breakdown voltages and junction yields. The BF 2 implanted junctions are more stable than arsenic implanted junctions.