Junction Current Research Articles

Strain and piezoelectric control of electronic and photonic properties of p − n diodes

Piezoelectricity is a well-known effect in a vast number of technologically important insulators and semiconductors and exists in 20 out of the 32 three-dimensional crystal classes. The piezoelectric effect is the driving mechanism behind several classical sensors and transmitters, and also most recently, in many nanodevices. Zhong Lin Wang coined the fields piezotronics and piezo-phototronics where the piezoelectric effect plays a dominant role. Piezoelectricity couples in a linear fashion mechanical strain to electrical fields and vice versa. In solids, there is another linear coupling between strain and the electric potential, known as the deformation potential effect. While linear in its coupling nature, this effect does not require the solid to be non-centrosymmetric in contrast to the piezoelectric effect. Moreover, the deformation potential effect is quantitatively huge and leads to changes in the conduction and valence band edges of III–V and II–VI materials of, typically, 50–100 meV in the presence of 1 % strain. Therefore, the deformation potential effect is essential to determine the electronic and photonic properties of bulk and nanostructure semiconductors in the presence of strain. In this work, we compute the relative importance of piezoelectricity and the deformation potential effect in the presence of lattice mismatch and external strain. We choose p − n junctions of ZnO/GaN structures but anticipate that the general conclusions can be carried over to other material structures. The main result of the present work is that both the inclusion of the deformation potential effect and piezoelectricity is crucial to correctly compute the effect of strain on p − n junction current–voltage curves and photonic properties. In our analysis of wurtzite heterostructures, the spontaneous polarization effect is also included but this effect appears to play a minor role for electronic and photonic properties.

Magnetic field dependence of critical currents of cross-type Josephson junctions with inhomogeneous critical current density under oblique magnetic fields

Abstract Studies of the magnetic interference of sandwich-type Josephson junctions in which perpendicular or oblique magnetic fields are applied to the junction plane have received less attention than those where the applied magnetic fields are parallel. Recently, it has been theoretically demonstrated that a variety of magnetic interferences of the critical currents appear when oblique magnetic fields are applied to a cross-type junction with homogeneous critical current density. We theoretically investigated the effect of the inhomogeneous critical current density in the junction plane, and found that more complicated magnetic interferences appeared. We considered the distribution of the current density flowing through the junction plane to explore the cause of these complex magnetic interferences.

Why strengthening gap junctions may hinder action potential propagation

Gap junctions are channels in cell membranes allowing ions to pass directly between cells. They are found throughout the body, including heart myocytes, neurons, and astrocytes. In cardiac tissue and throughout the nervous system, an action potential (AP) in one cell can trigger APs in neighboring cells connected by gap junctions. It is known experimentally that there is an ideal gap junction conductance for AP propagation—lower or higher conductance can lead to propagation failure. We explain this phenomenon geometrically in branching networks by analyzing an idealized model that focuses exclusively on gap junction and AP-generating currents. As expected, the gap junction conductance must be high enough for AP propagation to occur. However, if the gap junction conductance is too high, then it dominates the cell's intrinsic firing conductance and disrupts AP generation. We also identify conditions for semi-active propagation, where cells in the network are not individually excitable but still propagate action potentials.

External fields effectively switch the spin channels of transition metal-doped β-phase tellurene from first principles.

Non-volatile magnetic random-access memories have proposed the need for spin channel switching. However, this presents a challenge as each spin channel reacts differently to the external field. Tellurene is a semiconductor with a tunable bandgap, excellent stability, and high carrier concentration, but its lack of magnetic properties has hindered its application in spintronics. In this work, the influence of an external field on transition metal (TM)-doped β-tellurene is systematically analysed from first principles. First, the active-learning moment-tensor-potential (MTP) is used to verify the thermal stability of the V-doped system with the MTP proving to be 900 times faster than the traditional method. Subsequently, under biaxial strain ranging from -2% to 10%, the V-doped system undergoes a gradual transition from a magnetic semiconductor to a spin-gapless semiconductor, and further to a half-metal and magnetic metal. The band structure can be maintained under an electric field. By examining the magnetic anisotropy energy, the lattice changes profoundly impact the electromagnetic properties, particularly with the TMs being sensitive to strain. Moreover, the band structure is reflected in the spin resolution current of the magnetic tunnel junction. This work investigates the response of doped β-Te to external fields, revealing its potential applications in spintronics.

Source of IC power consumption and low power design

In these years, with the continuous development of 14nm and 7nm chip processes and the increasing popularity of computers, cell phones, and smart homes, the growing market of electronic products and ultra-fine research for the reliability of the chip requirements gradually increased. The method of reducing power consumption in the new context of new technology is called the chip field die-cut concern. This paper mainly summarizes two aspects of power consumption sources and methods to reduce power consumption, to provide a reference basis for future research directions: First, the major sources of power consumption are static power consumption and dynamic power consumption. The primary sources of static power consumption are sub-threshold leakage and gate leakage current. This paper also mentions some other leakage currents, such as reverse bias PN junction current and induced leakage current, which can be more carefully considered when exploring methods to reduce power consumption. A more comprehensive consideration when exploring ways to reduce power consumption. Dynamic power consumption is mainly divided into Switching power and Internal power and short-circuit power. Then we summarize the existing methods which can reduce power consumption: Clock gating (including Clock gating without a latch and Clock gating with a latch), Dynamic voltage and frequency scaling, multi-supply and multi-voltage technology, Power gating and multi-threshold voltage. These methods are from a proprietary perspective to reduce power consumption.

Circular current in a one-dimensional open quantum ring in the presence of magnetic field and spin–orbit interaction

In an open quantum system having a channel in the form of loop geometry, the current inside the channel, namely circular current, and overall junction current, namely transport current, can be different. A quantum ring has doubly degenerate eigen energies due to periodic boundary condition that is broken in an asymmetric ring where the ring is asymmetrically connected to the external electrodes. Kramers’ degeneracy and spin degeneracy can be lifted by considering non-zero magnetic field and spin–orbit interaction (SOI), respectively. Here, we find that symmetry breaking impacts the circular current conductance vs energy (E) spectra in addition to lifting the degeneracy. For charge and spin current conductances, the corresponding effects are not the same. Under symmetry-breaking they may remain symmetric or anti-symmetric or asymmetric around E = 0 whereas the transmission function (which is proportional to the junction current conductance) vs energy characteristic remains symmetric around E = 0. This study leads us to estimate the qualitative nature of the circular current and the choices of Fermi-energy/chemical potential to have a net non-zero current. As a result, we may manipulate the system to generate pure currents of charge, spin, or both, which is necessary for any spintronic and electronic applications.

Abstract 12241: Low-Efficiency Gene Editing is Capable of Suppressing Arrhythmogenesis in Long QT Syndrome Type II: Computer Simulation Study

Background: Long QT Syndrome Type II (LQT2) is a congenital cause of arrhythmia and sudden cardiac death due to mutations in ion channel hERG responsible for the rapid inward rectifying potassium current (I Kr ). Progress in gene therapy may result in a viable treatment for LQT2. However, the gene transduction efficacy required to prevent cardiac arrhythmias in LQT2 is unknown. We used computer simulation to examine the minimum gene transduction efficacy necessary to suppress early afterdepolarizations (EADs). Hypothesis: Low transduction efficacy of hERG is sufficient to suppress EADs through electrotonic coupling between transduced I Kr (+) and non-transduced I Kr (-) cardiomyocytes (Fig 1A). Methods: Computational models of rabbit and human cardiac tissue were implemented in 2D (100 x 100 cells) and 3D (13 x 13 x 13 cells) with a multi-state Markov model for I Kr and a dynamic gap junction resistance model. Gene transduction efficacy was modeled by varying the percentage of I Kr (+) cardiomyocytes from 0-100%. Spatial heterogeneity in gene delivery was modeled by varying the cluster size of I Kr (+) cells from 1-400 cells. I Kr (+) cell clusters were distributed randomly in the tissue. Results: In 2D, EADs were suppressed with 14% I Kr (+) cells (rabbit model) and 12% I Kr (+) cells (human model) (Fig 1B). In 3D, the minimum transduction efficacy was further reduced to 10% (rabbit model) which likely reflects the impact of increased cell-cell coupling. Clustering I Kr (+) cells required greater transduction efficacy (Fig 1C). Detailed ionic current trajectory analysis suggests that the sufficiently large gap junction current from I Kr (+) cells during phase 2 of the action potential can prevent I Kr (-) cells from undergoing the Andronov-Hopf bifurcation that leads to EADs. Conclusions: Computational models suggest low-efficiency gene editing is a viable approach for suppressing arrhythmogenesis in LQT2 patients.

Influence of electron beam irradiation induced charging-effect on nanoprobing localization of a crystal defect in MOSFET

The paper demonstrates that the electron beam (e-beam) irradiation induced charging-effect has remarkable impact on nanoprobing localization of a crystal defect hidden in metal-oxide-semiconductor field-effect transistor (MOSFET). We present a practical example showing that device characterization at the contact layer (CT) is susceptible to the charging-effect since scanning electron microscopy (SEM) based nanoprobe system running is inevitablely acompanied by e-beam irradiation towards device under test (DUT). The mechanisms is seldomly reported in the past. In our case, the p-n junction at a nMOSFET drain end showed the ohmic current-voltage (I-V) characteristic at the beginning. However, by utilizing the atomic force microscopy (AFM) based nanoprobe system without e-beam, the measurement found previous resistive characteristic of the p-n junctions disappeared. Instead, it exhibited good rectifying characteristic. I-V characteristic discrepancy coming from two analytical methods was attributed to the charging-effect influence. It was experimentally proven that the charging-effect impact at MOSFET gate CT had strong dependance on the e-beam irradiation magnitude corresponding to the SEM scan speed. Charging effect produced distinct consequences at distinct scan speeds. The positive charging-effect occurred under the fast scan while the negative charging-effect occurred under the slow scan. The former mechanism made the potential at gate CT high enough to turn on nMOSFET. Therefore, the nMOSFET channel current merged with the p-n junction current in a closed-loop. In contrast, the slow scan induced negative charging-effect made the gate potential lower than the nMOSFET threshold voltage (VT), so that the nMOSFET stayed off-state. Consequently, the p-n junction resumed its intrinsic rectifying I-V characteristic. Different from the nMOSFET, the charging-effect affected the pMOSFET in the opposite manner. As a result, the initial conclusion of the MOSFET junction leakage was not valid. Next, we ran a optimal flow to narrow down a fault by eliminating the charging-effect impact. Eventually, a crystal defect (pipeline) was isolated in a suspcted nMOSFET relying on nanoprobe and TEM analysis. The article explains the evident influence of charging-effect on the nanoprobe analysis and puts forward an effective way to minimize the side effect of the e-beam irradiation. The work may draw more attention to the analytical methodologies regarding MOSFET reliability improvement.

Enhanced gas sensing by graphene-silicon Schottky diodes under UV irradiation

The effect of ultraviolet (UV) or blue irradiation on graphene/n-doped silicon Schottky junctions toward gas sensing was investigated. Schottky diodes were subjected to oxidizing nitrogen dioxide (NO2, 1–3 ppm) and reducing tetrahydrofuran (THF, 50–200 ppm), showing significantly different responses observed on the current-voltage (I-V) characteristics, especially under UV light (275 nm). NO2 affected the resistive part of the forward region of the I-V curves, where graphene’s resistance dominates, and increased the junction current. A low detection limit of 75 ppb was obtained for NO2 detection at a 4 V voltage bias. THF influenced the reverse and forward regions, shifting the exponential parts of the characteristics, indicating the impact on the Schottky barrier height, and reducing the detection limit to 31 ppm. The adsorption of organic molecules increased the Schottky barrier height by up to tens of meV due to the dominating photogating effect. The width of the junction area may be crucial for optimizing graphene-silicon Schottky-based sensors and improving their performance, together with irradiation-induced modulation, to become one of the most advanced gas mixture sensors. The ease of fabrication of large-area graphene and forming stable graphene-silicon junctions determine a simple method for developing efficient gas sensing platforms.

Microwave Switch Architecture for Superconducting Integrated Circuits Using Magnetic Field-Tunable Josephson Junctions

We report on the design, fabrication, and measurement of a low-temperature microwave switch architecture that can be fully integrated on chip using single Josephson junctions and superconducting bias lines. The basic switching element used is a reflective single-pole-single-throw switch that is realized by tuning the critical current of a single Josephson junction by way of a local flux bias. A single-pole-single-throw switch is demonstrated at 4.2 K to have an on/off ratio in excess of 20 dB up to 12 GHz. This element is then incorporated into the design of a single-pole-double-throw switch that exhibits an on/off ratio above 20 dB up to 10 GHz. The switches require no intrinsic power dissipation in either state, and their performance was verified for input powers of -100 dBm to -60 dBm. S-parameter simulations using a simple lumped element model are in good agreement with the experimental data, allowing for the design to be extended to larger switch architectures.

Gap Junction Currents and Countercurrents

Gap Junction Currents and Countercurrents

Mathematical Psychiatry: On Cortical Spreading Depression-A Review.

The concept of migraine with aura (MwA) is a widespread condition that can affect up to 30% of migraine patients and manifests itself as a temporary visual illusion followed by a prolonged headache. It was initially pitched as a neurological disease, and observed that the spread of accompanying electrophysiological waves as part of the condition, which came to be known as cortical spreading depression (CSD). A strong theoretical basis for a link between MwA and CSD has eventually led to knowledge of the dynamics between the pair. In addition to experiment-based observations, mathematical models make an important contribution towards a numerical means of expressing codependent neural-scale manifestations. This provides alternate means of understanding and observing the phenomena while helping to visualize the links between the variables and their magnitude in contributing towards the emanation and dynamic pulsing of the condition. A number of biophysical mechanisms are believed to contribute to the MwA-CSD, spanning ion diffusion, ionic currents of membranes, osmosis, spatial buffering, neurotransmission, gap junctions, metabolic pumping, and synapse connections. As part of this review study, the various mathematical models for the description of the condition are expressed, reviewed, and contrasted, all of which vary in their depth, perspective, and level of information presented. Subsequent to this, the review looked into links between electrophysiological data-driven manifestations from measurements such as EEG and fMRI. While concluding remarks forged a structured pathway in the area on sub-themes that need to be investigated in order to strengthen and robustify the existing models, they include an accounting for inter-personal variability in models, sex and hormonal factors, and age groups, i.e., pediatrics vs. adults.

Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

We report on the measurement of the lateral distribution of the junction current of an electrical biased p-n GaN diode by electron emission microscopy using a low-energy electron microscope. The vacuum level at the surface of the diode was lowered by deposition of cesium to achieve negative electron affinity, allowing overflow electrons at the surface of the biased diodes to be emitted and their spatial distribution imaged. The results were compared to the literature, and a good match with analytical solutions by Joyce and Wemple [J. Appl. Phys. 41, 3818 (1970)] was obtained.

Single Event Displacement Effects in a VLSI

The research results of single event displacement effects in VLSI elements under the effect of neu-tron radiation are presented. The nonionizing energy losses in a sensitive microvolume of a VLSI element for the interaction of neutrons with silicon atoms are estimated. The influence of individual disordered regions and clusters of radiation defects on the performance of VLSIs are determined. The possibilities of fast anneal-ing effects and the additive effects of increasing the reverse p–n junction currents of individual VLSI elements on the conditions for the occurrence of failures of the entire microcircuit are shown.

Use-dependent facilitation of electrical transmission involves changes to postsynaptic K+ current.

Activity-dependent modulation of electrical transmission typically involves Ca2+ influx acting directly on gap junctions or initiating Ca2+-dependent pathways that in turn modulate coupling. We now describe short-term use-dependent facilitation of electrical transmission between bag cell neurons from the hermaphroditic snail, Aplysia californica, that is instead mediated by changes in postsynaptic responsiveness. Bag cell neurons secrete reproductive hormone during a synchronous afterdischarge of action potentials coordinated by electrical coupling. Here, recordings from pairs of coupled bag cell neurons in culture showed that nonjunctional currents influence electrical transmission in a dynamic manner. Under a dual whole cell voltage-clamp, the junctional current was linear and largely voltage-independent, while in current-clamp, the coupling coefficient was similar regardless of the extent of presynaptic hyperpolarization. Moreover, a train stimulus of action potential-like waveforms, in a voltage-clamped presynaptic neuron, elicited electrotonic potentials, in a current-clamped postsynaptic neuron, that facilitated over time when delivered at a frequency approximating the afterdischarge. Junctional current remained constant over the train stimulus, as did postsynaptic voltage-gated Ca2+ current. However, postsynaptic voltage-gated K+ current underwent cumulative inactivation, suggesting that K+ current run-down facilitates the electrotonic potential by boosting the response to successive junctional currents. Accordingly, preventing run-down by blocking postsynaptic K+ channels occluded facilitation. Finally, stimulation of bursts in coupled pairs resulted in synchronous firing, where active neurons could recruit silent partners through short-term use-dependent facilitation. Thus, potentiation of electrical transmission may promote synchrony in bag cell neurons and, by extension, reproductive function.NEW & NOTEWORTHY The understanding of how activity can facilitate electrical transmission is incomplete. We found that electrotonic potentials between electrically coupled neuroendocrine bag cell neurons facilitated in a use-dependent fashion. Rather than changes to the junctional current, facilitation was associated with cumulative inactivation of postsynaptic K+ current, presumably augmenting responsiveness. When made to burst, neurons synchronized their spiking, in part by use-dependent facilitation bringing quiescent cells to the threshold. Facilitation may foster en masse firing and neurosecretion.

Spin current rectification in a helical magnetic system with vanishing net magnetization

We report the phenomenon of spin current rectification in an antiferromagnetic helix, subjected to a transverse electric field, within a tight-binding framework based on Green’s function formalism. The electric field makes the site energies of the helix aperiodic in the Aunry–André–Harper (AAH) form, which breaks the symmetry among up and down spin sub-Hamiltonians. Under this condition, a finite bias drop along the helix yields different spin specific junction currents in two bias polarities, resulting in a spin current rectification. In the absence of either helicity or electric field, no such behavior is observed. Our analysis may provide a new route for getting spin current rectification through similar kinds of helical magnetic systems with vanishing net magnetization.

Triose-phosphate isomerase deficiency is associated with a dysregulation of synaptic vesicle recycling in Drosophila melanogaster.

Numerous neurodegenerative diseases are associated with neuronal dysfunction caused by increased redox stress, often linked to aberrant production of redox-active molecules such as nitric oxide (NO) or oxygen free radicals. One such protein affected by redox-mediated changes is the glycolytic enzyme triose-phosphate isomerase (TPI), which has been shown to undergo 3-nitrotyrosination (a NO-mediated post-translational modification) rendering it inactive. The resulting neuronal changes caused by this modification are not well understood. However, associated glycation-induced cytotoxicity has been reported, thus potentially causing neuronal and synaptic dysfunction via compromising synaptic vesicle recycling. This work uses Drosophila melanogaster to identify the impacts of altered TPI activity on neuronal physiology, linking aberrant TPI function and redox stress to neuronal defects. We used Drosophila mutants expressing a missense allele of the TPI protein, M81T, identified in a previous screen and resulting in an inactive mutant of the TPI protein (TPIM81T , wstd1). We assessed synaptic physiology at the glutamatergic Drosophila neuromuscular junction (NMJ), synapse morphology and behavioural phenotypes, as well as impacts on longevity. Electrophysiological recordings of evoked and spontaneous excitatory junctional currents, alongside high frequency train stimulations and recovery protocols, were applied to investigate synaptic depletion and subsequent recovery. Single synaptic currents were unaltered in the presence of the wstd1 mutation, but frequencies of spontaneous events were reduced. Wstd1 larvae also showed enhanced vesicle depletion rates at higher frequency stimulation, and subsequent recovery times for evoked synaptic responses were prolonged. A computational model showed that TPI mutant larvae exhibited a significant decline in activity-dependent vesicle recycling, which manifests itself as increased recovery times for the readily-releasable vesicle pool. Confocal images of NMJs showed no morphological or developmental differences between wild-type and wstd1 but TPI mutants exhibited learning impairments as assessed by olfactory associative learning assays. Our data suggests that the wstd1 phenotype is partially due to altered vesicle dynamics, involving a reduced vesicle pool replenishment, and altered endo/exocytosis processes. This may result in learning and memory impairments and neuronal dysfunction potentially also presenting a contributing factor to other reported neuronal phenotypes.

Using reaction-diffusion modeling to probe high-frequency cholinergic transmission

The vertebrate skeletal muscle fiber's endplate current is well-modeled by scaling up the spontaneous miniature endplate currents (mepcs) of voltage-clamped neuromuscular junctions (NMJ). Mepc characteristics couple tightly to binding of pre-synaptically-released acetylcholine (ACh) at post-synaptic receptors plus elimination of ACh by synaptic-cleft acetylcholinesterase (AChE). The question we address: Could the same “cholinergic machinery” muscles use for intermittent, relatively low-frequency endplate currents be redeployed to trigger the continual high-Hz output underlying electric organ discharge (EOD) in gymnotid electric fish like the glass knifefish, Eigenmannia? This question arises a) because, following a whole-genome duplication ∼¼ billion years ago, gymnotids (Amazon-Basin teleosts encompassing both Eigenmannia and their close relatives, the electric eels, Electrophorus) evolved non-contractile electric organs from the duplicate “muscle excitability-genome,” b) because Eigenmannia sustains EODs night-and-day at 200-600 Hz, and c) because supplying pre-synaptic ACh is high-cost relative to firing post-synaptic action potentials, efficient ACh-use is biologically non-trivial and motivates a need to model high-Hz cholinergic transmission. Here, via one-dimensional reaction-diffusion modeling plus a lateral escape mechanism for ACh, we simulate the events between ACh-release (singly, 200 Hz, 500 Hz) and ACh-binding to post-synaptic receptors in the presence of synaptic-cleft AChE. Using open AChRs (not channel current) as our metric, we first show that our model accords with published accounts of mepc time courses (single ACh-releases). Here, we show how the ACh-release time course, synaptic gap width, ACh-diffusion coefficient, and the density and cleft-distribution of AChE affect open-AChR(time). ACh-release at 200Hz and 500Hz is then examined. To address efficiency, the fraction of released-AChs yielding open AChRs is monitored as the quantity of ACh/release is varied. We find standard “NMJ machinery” to be operative at upper gymnotid frequencies, and thus wonder if the NMJ pre-synaptic ACh-supply machinery is, likewise, “over-engineered.”

First-principles study of single-molecule-structure determination of dithienoborepin isomers

Previous research results show that the conductance difference in molecular junction caused by quantum interference (QI) effect is an important way to identify isomers or improve the recognition sensitivity. Recently, single-molecule conductance of two fully π-conjugated dithienoborepin (DTB) isomers (DTB-A and DTB-B) with tricoordinate boron centers has been measured by using the scanning tunneling microscopy break junction technique. The result shows that QI can enhance chemical responsivity in single-molecule DTB junction. In this work, the first-principles method based on density functional theory and non-equilibrium Green's function is used to study the influence of QI effect on spin-transport property of DTB molecular junction connected to the nickel electrode, and the purpose of distinguishing DTB isomers (DTB-A and DTB-B) is realized by using amino and nitro passivation. The results show that the pristine DTB-A molecule and DTB-B molecule both have a up-spin transmission peak dominated by HOMO and a down-spin transmission peak dominated by LUMO on both sides of the Fermi level, and the energy positions and coefficients of two transmission peaks are basically the same. Therefore, the up-spin and down-spin current curves of the two junctions basically coincide, so that it is impossible to clearly distinguish the two isomers of DTB molecule simply by spin current. The QI can enhance the spin-polarized transport capability of two orbitals of amino-passivated DTB-A molecule to varying degrees but weaken the spin-polarized transport capability of two orbitals of amino-passivated DTB-B molecule. Therefore, the current of DTB-A molecular junction passivated by amino group is always higher than that of DTB-B molecular junction passivated by amino group. However, the QI can greatly enhance the spin-polarized transport capability of two orbitals of nitro-passivated DTB-B molecule but weaken the spin-polarized transport capability of two orbitals of nitro-passivated DTB-A molecule. Therefore, the current of DTB-B molecular junction passivated by nitro is always higher than that of DTB-A molecular junction passivated by nitro. Because the QI has different effects on the spin-transport capability of DTB-A and DTB-B passivated by amino or nitro group, so the two isomers of DTB molecule can be distinguished by measuring the spin current value. The above conclusions provide more theoretical guidance for the practical preparation of spin molecular junctions and the regulation of their spin-transport performance in the future.

SWITCHING EFFECT IN COMPOUNDS InGaSe2 AND InGaTe2

The presented work presents the results of studying the current-voltage characteristics of ternary compounds of the type, crystallizing in the tetragonal syngony, at various temperatures in a static mode. It was found that the compounds InGaSe2, InGaTe2 have switching properties with memory. With increasing temperature, the threshold voltage decreases and the most pronounced S-shaped characteristics are observed at low temperatures. It is shown that an obligatory condition for the appearance of negative resistance in the investigated phases is the existence of an additional mechanism of increase in the conductivity of the base region that accompanies injection. During injection, physical processes occur that lead either to an increase in the penetration depth of injected carriers, or to an additional increase in their concentration at each point, or to an increase in the proportion of injected carriers in the total p-n junction current. It was found that at low voltages across the diode, the base resistance is high and almost all of the applied voltage drops across it. As the voltage increases, the concentration of injected carriers in the base increases and its resistance decreases. Therefore, as the current increases, the total voltage increases. The current is a monotonic function of the applied voltage. This leads to a decrease in the share of the voltage drop at the base, which leads to amplification and a new redistribution of voltage between the base and the p-n junction. This is the positive feedback necessary for the appearance of negative resistance. Thus, in ternary semiconductors of the type, the obligatory conditions for the appearance of negative resistance are the existence of an additional mechanism of an increase in the conductivity of the base region that accompanies injection.