Abstract
The research results of single event displacement effects in VLSI elements under the effect of neu-tron radiation are presented. The nonionizing energy losses in a sensitive microvolume of a VLSI element for the interaction of neutrons with silicon atoms are estimated. The influence of individual disordered regions and clusters of radiation defects on the performance of VLSIs are determined. The possibilities of fast anneal-ing effects and the additive effects of increasing the reverse p–n junction currents of individual VLSI elements on the conditions for the occurrence of failures of the entire microcircuit are shown.
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