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Abstract
The effect of reactor neutron irradiation on the SiC crystals etching rate in KOH melt has been investigated. It is shown that at high doses of irradiation (1019 - 1021 neutrons/cm2) the SiC etching rate sharply increases, especially in the [0001] Si direction, leading to essential reduction of orientation anisotropy of polar {0001} faces etching. The increased rate of irradiated crystals etching remains after high-temperature annealing, up to the temperatures of 1400 – 1600 °C. The results are explained by the presence of meta-stable clusters of radiation defects which are the centers of increased chemical activity in the irradiated crystals.
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