Interfacial Spin Research Articles

Connection Between Intrinsic Interfacial Frozen Spins and Exchange Bias Effect in Core@Shell Iron@Iron‐Oxide Nanoparticles

Exchange bias is a common phenomenon that appears at the interfaces between ferromagnetic and ferrimagnetic materials due to the presence of frozen spins. However, systematic quantification of their intrinsic correlation remains to be a challenge. Herein, the exchange bias induced by frozen spins is assumed as the synergy of an effective static magnetic field and an effective anisotropy, and thus the effect of intrinsic frozen spins at core@shell interfaces of iron@iron‐oxide nanoparticles is estimated. It is confirmed that the shift of the hysteresis loop is 2322 Oe and the coercivity increases from 360 to 1590 Oe. Using micromagnetic simulations, such a hysteresis loop is reconstructed by introducing an effective static magnetic field of 7360 Oe and an effective anisotropy of 45 × 103 J m−3. Therefore, a connection between the intrinsic interfacial frozen spins and the exchange bias effect is established from a mesoscale perspective, mediated by the effective magnetic field and effective anisotropy. The results can provide an understanding of exchange bias effect and promote applications of ferromagnetic/ferrimagnetic heterostructures.

Enhanced low-field positive magnetoresistance and magnetic anisotropy in La0.7Sr0.3MnO3 films grown on (001) Si

Strong anisotropy is observed in the magnetization and magnetoresistance (MR) of a series of La0.7Sr0.3MnO3 (LSMO) films grown on (001) oriented Si using pulsed sputtering plasma. Magnetic anisotropy (MA) of LSMO films is in the order of 106 erg/cm3, comparable to or larger than that of the other heterostructures. Analysis using the Stoner-Wohlfarth model and the density functional theory (DFT) indicates that the crystalline and induced anisotropies are almost compensating with each other, and observed MA is of the same order of shape anisotropy. The rise in MA with the LSMO thickness is attributed to the shape anisotropy and interfacial spin reordering. These LSMO films exhibit positive and negative MR, even though the LSMO is well known for colossal negative MR. The 12.4 nm thick LSMO film shows a maximum ∼7 % in-plane low-field positive MR, which increases to ∼12 % for 20.0 nm thick LSMO, but the variation of out-of-plane positive MR is ∼ ± 0.8 %. The maximum in-plane positive MR occurs at ∼ ± 0.2 kG (switching field), which corresponds to the coercive field. In contrast, the out-of-plane positive MR switching field is relatively higher, ∼ ± 5 kG, 25 times larger than the in-plane switching field. The anisotropy in positive MR and its switching field is due to the strong MA, modulated by the charge transfer-induced interfacial exchange coupling strength, confirmed using the DFT. The MA and anisotropy in MR with the dual sign of MR are intriguing phenomena; their tunability could pave the way for advanced technology in magnetic devices.

Revealing the key role of molecular packing on interface spin polarization at two-dimensional limit in spintronic devices.

Understanding spinterfaces between magnetic metals and organic semiconductors is essential to unlock the great potentials that organic materials host for spintronic applications. Although plenty of efforts have been devoted to studying organic spintronic devices, exploring the role of metal/molecule spinterfaces at two-dimensional limit remains challenging because of excessive disorders and traps at the interfaces. Here, we demonstrate atomically smooth metal/molecule interfaces through nondestructively transferring magnetic electrodes on epitaxial grown single-crystalline layered organic films. Using such high-quality interfaces, we investigate spin injection of spin-valve devices based on organic films of different layers, in which molecules are packed in different manners. We find that the measured magnetoresistance and the estimated spin polarization increase markedly for bilayer devices compared with their monolayer counterparts. These observations reveal the key role of molecular packing on spin polarization, which is supported by density functional theory calculations. Our findings provide promising routes toward designing spinterfaces for organic spintronic devices.

Monolayer Superconductivity and Tunable Topological Electronic Structure at the Fe(Te,Se)/Bi2 Te3 Interface.

The interface between 2D topological Dirac states and an s-wave superconductor is expected to support Majorana-bound states (MBS) that can be used for quantum computing applications. Realizing these novel states of matter and their applications requires control over superconductivity and spin-orbit coupling to achieve spin-momentum-locked topological interface states (TIS) which are simultaneously superconducting. While signatures of MBS have been observed in the magnetic vortex cores of bulk FeTe0.55 Se0.45 , inhomogeneity and disorder from doping make these signatures unclear and inconsistent between vortices. Here superconductivity is reported in monolayer (ML) FeTe1-y Sey (Fe(Te,Se)) grown on Bi2 Te3 by molecular beam epitaxy (MBE). Spin and angle-resolved photoemission spectroscopy (SARPES) directly resolve the interfacial spin and electronic structure of Fe(Te,Se)/Bi2 Te3 heterostructures. For y= 0.25, the Fe(Te,Se) electronic structure is found to overlap with the Bi2 Te3 TIS and the desired spin-momentum locking is not observed. In contrast, for y= 0.1, reduced inhomogeneity measured by scanning tunneling microscopy (STM) and a smaller Fe(Te,Se) Fermi surface with clear spin-momentum locking in the topological states are found. Hence, it is demonstrated that the Fe(Te,Se)/Bi2 Te3 system is a highly tunable platform for realizing MBS where reduced doping can improve characteristics important for Majorana interrogation and potential applications.

Enhancement of interfacial spin transparency in Py/NiO/Pt heterostructure

This work reports the enhancement of damping-like and field-like spin–orbit torque (SOT) efficiencies and interfacial spin transparency (Tin) in the Py/NiO/Pt heterostructure. The SOT efficiencies and Tin are characterized by combining the spin–torque ferromagnetic resonance (ST-FMR) and the spin-pumping (SP) techniques. The inevitable inverse spin Hall voltage contamination induced by SP in the ST-FMR spectrum is extracted and subtracted by combining additional SP measurements, which allows obtaining accurate SOT efficiencies and Tin. The damping-like and field-like SOT efficiencies vary with the NiO insertion layer thickness, which is a result of the change of Tin. The maximum Tin reaches ∼0.82 for a 0.6 nm-thick NiO layer. This work shows that NiO insertion is an effective method for enhancing Tin and, hence, the SOT efficiency.

Sputtered terbium iron garnet films with perpendicular magnetic anisotropy for spintronic applications

We report the structural, magnetic, and interfacial spin transport properties of epitaxial terbium iron garnet (TbIG) ultrathin films deposited by magnetron sputtering. High crystallinity was achieved by growing the films on gadolinium gallium garnet substrates either at high temperatures, or at room temperature followed by thermal annealing, above 750 °C in both cases. The films display large perpendicular magnetic anisotropy (PMA) induced by compressive strain, and tunable structural and magnetic properties through growth conditions or the substrate lattice parameter choice. The ferrimagnetic compensation temperature (TM) of selected TbIG films was measured through the temperature-dependent anomalous Hall effect in Pt/TbIG heterostructures. In the studied films, TM was found to be between 190 and 225 K, i.e., approximately 25-60 K lower than the bulk value, which is attributed to the combined action of Tb deficiency and oxygen vacancies in the garnet lattice evidenced by x-ray photoelectron spectroscopy measurements. Sputtered TbIG ultrathin films with large PMA and highly tunable properties reported here can provide a suitable material platform for a wide range of spintronic experiments and device applications.

Manipulating exchange bias in Ir25Mn75/CoTb bilayer through spin–orbit torque

Manipulation of exchange bias (EB) via spin-current-induced spin–orbit torque (SOT) is of great importance in developing full electric control spintronic devices. Here, we report on SOT-dominant manipulation of the interfacial antiferromagnetic spins and the related perpendicular EB (PEB) in the IrMn/Co1-xTbx (CoTb) bilayers with various Tb contents. No matter the magnetization of the ferrimagnetic CoTb layer is Co-dominant or Tb-dominant; all the samples were perpendicularly magnetized, and spontaneous PEB could be established during the isothermal crystallization of the IrMn layer. The SOT-induced EB switching could be accomplished with assistance of an in-plane or out-of-plane external magnetic field, associated with a monotonic reduction of the EB switching fraction by increasing x. This phenomenon is attributed to weakening of the interfacial exchange coupling between the CoTb and IrMn layers as x is increased. These findings provide a way to design high energy-efficient spintronic devices by employing the antiferromagnet/ferrimagnet bilayers, which may have weak stray field and strong robustness in contrast to commonly used heavy-metal/ferromagnet/antiferromagnet trilayers.

A Drift-Diffusion Based Modeling and Optimization Framework for Nanoscale Spin-Orbit Torque Devices

We present a comprehensive set of experimentally validated/calibrated models that capture the physics of the nanoscale spin-orbit torque (SOT) devices. We consider various effects that are prominent at nanoscale including incomplete current redistribution, interface spin mixing, and nonuniform resistivity that were ignored in the prior modeling efforts. We develop a formalism based on drift-diffusion equations and the transfer matrix method to accurately estimate spin current distribution. We utilize finite element simulations to accurately calculate electric current density and field, and see considerable differences to the results from the simplified lumped model commonly used. For example, we calculate ~20% smaller spin current in a 15-nm-wide ferromagnet with a 4-nm-thick <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -W SOT channel. We further account for the effect of interface scattering on resistivity. Finally, we quantify the optimal SOT-layer thickness that minimizes the write energy as a function of spin diffusion length and conductivity of SOT materials. We show that the optimal thickness increases with the spin diffusion length and decreases with the conductivity.

Coupling of terahertz light with nanometre-wavelength magnon modes via spin–orbit torque

Spin-based technologies can operate at terahertz frequencies but require manipulation techniques that work at ultrafast timescales to become practical. For instance, devices based on spin waves, also known as magnons, require efficient generation of high-energy exchange spin waves at nanometre wavelengths. To achieve this, a substantial coupling is needed between the magnon modes and an electro-magnetic stimulus such as a coherent terahertz field pulse. However, it has been difficult to excite non-uniform spin waves efficiently using terahertz light because of the large momentum mismatch between the submillimetre-wave radiation and the nanometre-sized spin waves. Here we improve the light–matter interaction by engineering thin films to exploit relativistic spin–orbit torques that are confined to the interfaces of heavy metal/ferromagnet heterostructures. We are able to excite spin-wave modes with frequencies of up to 0.6 THz and wavelengths as short as 6 nm using broadband terahertz radiation. Numerical simulations demonstrate that the coupling of terahertz light to exchange-dominated magnons originates solely from interfacial spin–orbit torques. Our results are of general applicability to other magnetic multilayered structures, and offer the prospect of nanoscale control of high-frequency signals.

Significant Role of Interfacial Spin–Orbit Coupling in the Spin-to-Charge Conversion in Pt/NiFe Heterostructure

For the spin-to-charge conversion (SCC) in heavy metal/ferromagnet (HM/FM) heterostructure, the contribution of interfacial spin-orbit coupling (SOC) remains controversial. Here, we investigate the SCC process of the Pt/NiFe heterostructure by the spin pumping in YIG/Pt/NiFe/IrMn multilayers. Due to the exchange bias of NiFe/IrMn structure, the NiFe magnetization can be switched between magnetically unsaturated and saturated states by opposite resonance fields of YIG layer. The spin-pumping signal is found to decrease significantly when the NiFe magnetization is changed from the saturated state to the unsaturated state. Theoretical analysis indicates that the interfacial spin absorption is enhanced for the above-mentioned NiFe magnetic state change, which results in the increased and decreased spin flow in the Pt layer and across the Pt/NiFe interface, respectively. These results demonstrate that in our case the interfacial SOC effect at the Pt/NiFe interface is dominant over the bulk inverse spin Hall effect in the Pt layer. Our work reveals a significant role of interfacial SOC in the SCC in HM/FM heterostructure, which can promote the development of high-efficiency spintronic devices through interfacial engineering.

Role of Spin Transport through the β-Ta/Co20Fe60B20 Interface on its Ultrafast Demagnetization: Implications for Ultra-High-Speed Spin-Orbitronic Devices

Femtosecond laser-induced spin manipulation has fueled intense interest but understanding its underlying microscopic mechanisms in complex systems such as nonmagnet (NM)/ferromagnet (FM) heterostructures having strong spin-orbit effect is still at its infancy. Here, we report on the ultrafast demagnetization, remagnetization, and damping study in β-Ta(t nm)/Co20Fe60B20(d nm)/SiO2(2 nm) thin-film heterostructures by systematically varying both the Ta and Co20Fe60B20 thicknesses. Based on experimental results, we have established a direct relationship between the variation of the demagnetization rate and the Gilbert damping constant, indicating interface spin transport as the prevailing mechanism for both the ultrafast demagnetization and the damping. At higher thicknesses (t ≥ 7 nm) of β-Ta, the spin accumulation coefficient is found to be ∼0.24 eV, which is about 1.8 times less than its value in the lower thickness regime (t < 7 nm). These results will have important implications toward the evolution of ultra-high-speed spin-orbitronic devices.

Reconstruction of Thiospinel to Active Sites and Spin Channels for Water Oxidation.

Water electrolysis is a promising technique for carbon neutral hydrogen production. A great challenge remains at developing robust and low-cost anode catalysts. Many pre-catalysts are found to undergo surface reconstruction to give high intrinsic activity in the oxygen evolution reaction (OER). The reconstructed oxyhydroxides on the surface are active species and most of them outperform directly synthesized oxyhydroxides. The reason for the high intrinsic activity remains to be explored. Here, a study is reported to showcase the unique reconstruction behaviors of a pre-catalyst, thiospinel CoFe2 S4 , and its reconstruction chemistry for a high OER activity. The reconstruction of CoFe2 S4 gives a mixture with both Fe-S component and active oxyhydroxide (Co(Fe)Ox Hy ) because Co is more inclined to reconstruct as oxyhydroxide, while the Fe is more stable in Fe-S component in a major form of Fe3 S4 . The interface spin channel is demonstrated in the reconstructed CoFe2 S4 , which optimizes the energetics of OER steps on Co(Fe)Ox Hy species and facilitates the spin sensitive electron transfer to reduce the kinetic barrier of O-O coupling. The advantage is also demonstrated in a membrane electrode assembly (MEA) electrolyzer. This work introduces the feasibility of engineering the reconstruction chemistry of the precatalyst for high performance and durable MEA electrolyzers.

Magnetoresistive Single‐Molecule Junctions: the Role of the Spinterface and the CISS Effect

AbstractThis review is an effort in putting together the latest results about room‐temperature magnetoresistive (MR) effects in nanoscale/single‐molecule electronic devices consisting of one (few) molecule(s) placed in electrical contact between two nanoscale electrodes. Molecules represent powerful building blocks for developing state‐of‐the‐art MR devices, as they bring long spin relaxation timescales, low cost and high tunability of their electrical and magnetic properties via chemical modifications. The capability to control at room temperature and under bespoke electrodes’ magnetization the MR response of a single‐molecule (SM) device has been a longstanding quest. Such SM platforms could serve as fundamental tools to understand what the main mechanistic ingredients of MR effects in a molecular device are, leading to their use as building‐blocks for miniaturization in spintronic applications. The work carried out so far in this field has identified two key components directly involved in the MR response of a single(few)‐molecule(s) device: (i) The molecule|electrode spinterface, defining the interplay between interfacial electrostatics and spin density, has been proven to play a fundamental role in the interpretation of the observed single‐molecule junction's MR effects, which is governed by the electrode material and the electrode‐molecule chemistry. (ii) Two aspects of the molecular structure have been demonstrated to be involved in the spin‐dependent conduction mechanism: (1) the presence of paramagnetic metal centres in the molecular structure and how their orbitals bearing the unpaired electrons couple with the device electrodes, and (2), the degree of chirality within the molecular wire. This contribution will focus on the above points (i‐ii) by making use of specific examples in the literature.

The effective spin-splitting manipulation of monolayer WSe2 and Janus WSSe on SrIrO3(111) surface: A DFT study

Spin regulation and manipulation in two-dimensional transition-metal dichalcogenides (TMDCs) is of great significance for two-dimensional spintronics. The electronic structure and spin feature of WSe2/SrIrO3(111) and WSSe/SrIrO3(111) interfaces were investigated by first-principles calculations with spin–orbital coupling, for which various and effective stacking configurations were considered. The spin-splitting of WSe2 at K point in the Brillouin zone can be significantly enhanced by the strong spin–orbital coupling of SrIrO3, while for WSSe, the enhanced spin-splitting is found at Q point. In particular, a small compressive strain of 1% can further strengthen the spin-splitting to 630 meV at K point, along with the p-type doping in WSe2. These findings provide a way to engineer the electronic structure and spin-splitting of TMDCs via strong interfacial spin–orbital coupling and appropriate strain field, which will extend their potential applications in spintronic devices.

Giant spin Hall effect in half-Heusler alloy topological semimetal YPtBi grown at low temperature

Half-Heusler alloy topological semimetal YPtBi is a promising candidate for an efficient spin source material having both large spin Hall angle θSH and high thermal stability. However, high-quality YPtBi thin films with low bulk carrier density are usually grown at 600 °C, which exceeds the limitation of 400 °C for back end of line (BEOL) process. Here, we investigate the crystallinity and spin Hall effect of YPtBi thin films grown at lower growth temperature down to 300 °C. Although both effective spin Hall angle and spin Hall conductivity degraded with lowering the growth temperature to 300 °C due to degradation of the interfacial spin transparency, they were recovered by reducing the sputtering Ar gas pressure. We achieved a giant θSH up to 7.8 and demonstrated efficient spin–orbit torque magnetization switching by ultralow current density of ∼105 A/cm2 in YPtBi grown at 300 °C with the Ar gas pressure of 1 Pa. Our results provide the recipe to achieve giant θSH in YPtBi grown at lower growth temperature suitable for BEOL process.

Time-resolved detection of spin–orbit torque switching of magnetization and exchange bias

Current-induced magnetization switching driven by spin–orbit torques on sub-nanosecond timescales could be used to create fast and low-power spintronic devices. The time-resolved detection and analysis of switching trajectories in ferromagnet/antiferromagnet exchange-biased structures are the key to designing spin–orbit torque devices with high speed, but insight remains limited. Here we report the time-resolved detection of spin–orbit torque switching of the magnetization and exchange bias in platinum/cobalt/iridium–manganese heterostructures. Using time-resolved magneto-optical Kerr microscopy, combined with micromagnetic simulations, we show that the ferromagnets, as well as interfacial antiferromagnetic spins and exchange bias, can be partially switched by sub-nanosecond current pulses, which allows the switching probabilities to be flexibly controlled at multiple levels. We also show that the spin–orbit-torque-induced switching of the exchange bias, which intimately depends on the current density, can stabilize multilevelled magnetization switching within sub-nanosecond current pulses.

Hyperthermia of Magnetically Soft-Soft Core-Shell Ferrite Nanoparticles

Magnetically soft-soft MnFe2O4-Fe3O4 core-shell nanoparticles were synthesized through a seed-mediated method using the organometallic decomposition of metal acetyl acetonates. Two sets of core-shell nanoparticles (S1 and S2) of similar core sizes of 5.0 nm and different shell thicknesses (4.1 nm for S1 and 5.7 nm for S2) were obtained by changing the number of nucleating sites. Magnetic measurements were conducted on the nanoparticles at low and room temperatures to study the shell thickness and temperature dependence of the magnetic properties. Interestingly, both core-shell nanoparticles showed similar saturation magnetization, revealing the ineffective role of the shell thickness. In addition, the coercivity in both samples displayed similar temperature dependencies and magnitudes. Signatures of spin glass (SG) like behavior were observed from the field-cooled temperature-dependent magnetization measurements. It was suggested to be due to interface spin freezing. We observed a slight and non-monotonic temperature-dependent exchange bias in both samples with slightly higher values for S2. The effective magnetic anisotropy constant was calculated to be slightly larger in S2 than that in S1. The magnetothermal efficiency of the chitosan-coated nanoparticles was determined by measuring the specific absorption rate (SAR) under an alternating magnetic field (AMF) at 200-350 G field strengths and frequencies (495.25-167.30 kHz). The S2 nanoparticles displayed larger SAR values than the S1 nanoparticles at all field parameters. A maximum SAR value of 356.5 W/g was obtained for S2 at 495.25 kHz and 350 G for the 1 mg/mL nanoparticle concentration of ferrogel. We attributed this behavior to the larger interface SG regions in S2, which mediated the interaction between the core and shell and thus provided indirect exchange coupling between the core and shell phases. The SAR values of the core-shell nanoparticles roughly agreed with the predictions of the linear response theory. The concentration of the nanoparticles was found to affect heat conversion to a great extent. The in vitro treatment of the MDA-MB-231 human breast cancer cell line and HT-29 human colorectal cancer cell was conducted at selected frequencies and field strengths to evaluate the efficiency of the nanoparticles in killing cancer cells. The cellular cytotoxicity was estimated using flow cytometry and an MTT assay at 0 and 24 h after treatment with the AMF. The cells subjected to a 45 min treatment of the AMF (384.50 kHz and 350 G) showed a remarkable decrease in cell viability. The enhanced SAR values of the core-shell nanoparticles compared to the seeds with the most enhancement in S2 is an indication of the potential for tailoring nanoparticle structures and hence their magnetic properties for effective heat generation.

Spin-transfer and spin-orbit torques in the Landau–Lifshitz–Gilbert equation

Dynamic simulations of spin-transfer and spin-orbit torques are increasingly important for a wide range of spintronic devices including magnetic random access memory, spin-torque nano-oscillators and electrical switching of antiferromagnets. Here we present a computationally efficient method for the implementation of spin-transfer and spin-orbit torques within the Landau–Lifshitz–Gilbert equation used in micromagnetic and atomistic simulations. We consolidate and simplify the varying terminology of different kinds of torques into a physical action and physical origin that clearly shows the common action of spin torques while separating their different physical origins. Our formalism introduces the spin torque as an effective magnetic field, greatly simplifying the numerical implementation and aiding the interpretation of results. The strength of the effective spin torque field unifies the action of the spin torque and subsumes the details of experimental effects such as interface resistance and spin Hall angle into a simple transferable number between numerical simulations. We present a series of numerical tests demonstrating the mechanics of generalised spin torques in a range of spintronic devices. This revised approach to modelling spin-torque effects in numerical simulations enables faster simulations and a more direct way of interpreting the results, and thus it is also suitable to be used in direct comparisons with experimental measurements or in a modelling tool that takes experimental values as input.

Effective spin dynamic control of CoFeB/Nd heterostructure by matched resistivity

The spin dynamics modulation has attracted extensive attention in the past decades. Rare-earth (RE) metals are essential participants in this context due to the large spin–orbit coupling. Here, with neodymium (Nd) capping, we achieve the enhancement on spin dynamic damping of Co40Fe40B20 (CFB) films by three times larger than that of CFB single layer. Based on the spin pumping theory, the interfacial spin mixing conductance Geff↑↓ is calculated as 7.3 × 1015 cm−2, which is one order larger than that of CFB/Pt. It leads to the large spin current transparency at CFB/Nd interface. By comparing of the resistivity of each layer, we found that the matched resistivity at two sides of the CFB/Nd interface plays an important role in the enhancement of Geff↑↓. As a consequence, a high spin transparency of the CFB/Nd interface is obtained as 82%. In addition, damping enhancement of CFB is not changed promptly by inserting 1–2 nm Cu layer, but it is suppressed when the Cu layer is thicker than 3 nm, which is related to the thickness dependence of the Cu resistivity. Our study broadens the horizon for the application of rare-earth (RE) in spintronics.

Hole Spin Qubits in Thin Curved Quantum Wells

Hole spin qubits are frontrunner platforms for scalable quantum computers because of their large spin-orbit interaction which enables ultrafast all-electric qubit control at low power. The fastest spin qubits to date are defined in long quantum dots with two tight confinement directions, when the driving field is aligned to the smooth direction. However, in these systems the lifetime of the qubit is strongly limited by charge noise, a major issue in hole qubits. We propose here a different, scalable qubit design, compatible with planar CMOS technology, where the hole is confined in a curved germanium quantum well surrounded by silicon. This design takes full advantage of the strong spin-orbit interaction of holes, and at the same time suppresses charge noise in a wide range of configurations, enabling highly coherent, ultrafast qubit gates. While here we focus on a Si/Ge/Si curved quantum well, our design is also applicable to different semiconductors. Strikingly, these devices allow for ultrafast operations even in short quantum dots by a transversal electric field. This additional driving mechanism relaxes the demanding design constraints, and opens up a new way to reliably interface spin qubits in a single quantum dot to microwave photons. By considering state-of-the-art high-impedance resonators and realistic qubit designs, we estimate interaction strengths of a few hundreds of MHz, largely exceeding the decay rate of spins and photons. Reaching such a strong coupling regime in hole spin qubits will be a significant step towards high-fidelity entangling operations between distant qubits, as well as fast single-shot readout, and will pave the way towards the implementation of a large-scale semiconducting quantum processor.