Interfacial Recombination Losses Research Articles

Probing into the Low Efficiency of CdS/SnS-based Solar Cells and Remediation through Surface Treatments

Tin sulfide (SnS) is a highly promising photovoltaic absorption material in thin-film solar cells with abundant reserves, environmental friendliness, low cost and long-term stability. An efficiency of up to 4.8% has been achieved for SnS absorber/CdS heterojunction solar cells where the CdS buffer layer is usually obtained by chemical bath deposition. However, current CdS/SnS devices often suffer from severe interface recombination loss, which deteriorates device performance. This report focuses on the CdS film surface to identify performance-degrading factors for CdS/SnS-based solar cells. XRD and XPS reveal numerous oxides on freshly fabricated CdS films increasing surface roughness and reducing conductivity. Herein, a method based on ammonium sulfide (AS) chemical treatment is proposed, which can effectively reduce the oxide content on the surface of CdS and optimize the band alignment, leading to the facilitation of charge carrier transport and the suppression of interface recombination. Consequently, the PCE of the FTO/CdS/SnS/Ag device is enhanced about three times (from 0.18% to 0.47%) with excellent moisture stability.

Device optimization of all inorganic CsPbBr3/LNMO based multi-layered perovskite light harvesters for broader capturing of solar spectrum

All inorganic Cesium lead bromide (CsPbBr3) planar perovskites have garnered enormous significance in photovoltaic applications owing to its outstanding stability against oxygen, heat and moisture. However, the power conversion efficiencies of the CsPbBr3 planar perovskites are quite low primarily due to the inferior range of light absorbance and interfacial charge recombination losses. This issue can be successfully resolved with a novel multi-absorber architecture approach which incorporates dual absorbers consisting of a lower band gap Lanthanum Nickel Manganese Oxide (La2NiMnO6 or LNMO) material along with the wider band gap CsPbBr3 material so that the light absorbance regime could be well extended for maximal utilization of the solar spectrum. Therefore, this article incorporates numerical modeling and guided optimization of all inorganic ITO/ETL/CsPbBr3/La2NiMnO6(LNMO)/HTL dual absorbers-based heterojunction structure to improvise the power conversion efficiency of CsPbBr3 based single absorber PSCs. The critical device’s parameters, such as; absorber layer and carrier transport layer thickness, defect density, temperature, doping concentration, frequency response, capacitance effects, Mott-Schottky effects as well as series and shunt resistances are thoroughly optimized and evaluated using Solar Cell Capacitance Simulator (SCAPS-1D) simulator. The proposed dual absorber layer composition produces a substantial enhancement in performance with a peak power conversion efficiency (PCE) of 26.98 %, short circuit current (Jsc) of 39.75 mA/cm2, open circuit voltage (Voc) of 0.85 V, and fill factor (FF) of 77.98 % at a device defect density of 1015 cm−3 outperforming the 11 % of PCE attained with the experimentally reported CsPbBr3 single junction counterpart along with PSCs with various dual absorbers-based composition.

Repairing Interfacial Defects in Self-Assembled Monolayers for High-Efficiency Perovskite Solar Cells and Organic Photovoltaics through the SAM@Pseudo-Planar Monolayer Strategy.

Lately, carbazole-based self-assembled monolayers (SAMs) are widely employed as effective hole-selective layers (HSLs) in inverted perovskite solar cells (PSCs). Nevertheless, these SAMs tend to aggregate in solvents due to their amphiphilic nature, hindering the formation of a monolayer on the ITO substrate and impeding effective passivation of deep defects in the perovskites. In this study, a series of new SAMs including DPA-B-PY, CBZ-B-PY, POZ-B-PY, POZ-PY, POZ-T-PY, and POZ-BT-PY are synthesized, which are employed as interfacial repairers and coated atop CNph SAM to form a robust CNph SAM@pseudo-planar monolayer as HSL in efficient inverted PSCs. The CNph SAM@pseudo-planar monolayer strategy enables a well-aligned interface with perovskites, synergistically promoting perovskite crystal growth, improving charge extraction/transport, and minimizing nonradiative interfacial recombination loss. As a result, the POZ-BT-PY-modified PSC realizes an impressively enhanced solar efficiency of up to 24.45% together with a fill factor of 82.63%. Furthermore, a wide bandgap PSC achieving over 19% efficiency. Upon treatment with the CNph SAM@pseudo-planar monolayer, also demonstrates a non-fullerene organic photovoltaics (OPVs) based on the PM6:BTP-eC9 blend, which achieves an efficiency of 17.07%. Importantly, these modified PSCs and OPVs all show remarkably improved stability under various testing conditions compared to their control counterparts.

Side chain modulated ferrocene derivative as the interstitial conductive medium for high-performance and stable perovskite solar cells

The interfacial nonradiative recombination loss caused by the deep traps and mismatched band alignment restrained the commercial viability of perovskite solar cells (PSCs). Herein, we have constructed ferrocene carboxylic acid (FcA) and octafluoropentyl-ferrocenyl-carboxylate (OFFcA) interstitial conductive mediums to modulate the integral heterointerface properties and the photovoltaic performances of PSCs. By comparing the passivation strengths of the two molecules, we found that the synergistic effects among Fc/Fc+ redox shuttle, C=O group, and F substituents realize the optimal elimination of interfacial trap sources. Electron-withdrawing F groups reinforce the capacity of the Fc/Fc+ redox shuttle for the healing of metallic Pb defects and provide extensive anchoring sites to stabilize the organic components. Additionally, the homogeneity of the OFFcA layer as well as the humidity stability of perovskite film are facilitated through the introduction of F substituents, which reduce the contact resistance and improve the interfacial charge transfer. The champion OFFcA-modified device delivers an exceptional PCE of 23.62%, exceeding those of the control (PCE=22.32%) and FcA-modified (PCE=23.06%) devices. Moreover, the unencapsulated OFFcA-modified device retains 82.7% of the primary efficiency at 60% RH for more than 50 d and only loses less than 10% of the primary efficiency when stored in a glove box for more than 2000 h.

Synergistic defect passivation and strain compensation toward efficient and stable perovskite solar cells

Rational interface engineering is essential for minimizing interfacial nonradiative recombination losses and enhancing device performance. Herein, we report the use of bidentate diphenoxybenzene (DPOB) isomers as surface modifiers for perovskite films. The DPOB molecules, which contain two oxygen (O) atoms, chemically bond with undercoordinated Pb2+ on the surface of perovskite films, resulting in compression of the perovskite lattice. This chemical interaction, along with physical regulations, leads to the formation of high-quality perovskite films with compressive strain and fewer defects. This compressive strain-induced band bending promotes hole extraction and transport, while inhibiting charge recombination at the interfaces. Furthermore, the addition of DPOB will reduce the zero-dimensional (0D) Cs4PbBr6 phase and produce the two-dimensional (2D) CsPb2Br5 phase, which is also conducive to the improvement of device performance. Ultimately, the resulting perovskite films, which are strain-released and defect-passivated, exhibit exceptional device efficiency, reaching 10.87% for carbon-based CsPbBr3 device, 14.86% for carbon-based CsPbI2Br device, 22.02% for FA0.97Cs0.03PbI3 device, respectively. Moreover, the unencapsulated CsPbBr3 PSC exhibits excellent stability under persistent exposure to humidity (80%) and heat (80 °C) for over 50 days.

Fabrication of Efficient and Simple-Structured Perovskite Solar Cells Using a Multifunctional Biocolina Surface Treatment.

The electron transport layer (ETL)-free perovskite solar cells (PSCs) have gained significant interest by simplifying the manufacture process and reducing the time/energy required for the fabrication of ETLs. Unfortunately, the performance of these ETL-free PSCs still lags behind those of the conventional counterparts due to the slow electron extraction and undesired interfacial charge recombination loss at the buried interface. In this work, a facile and multifunctional biocolina thin layer is incorporated on the bottom electrodes to regulate the interface energy level alignment by forming an interface dipole layer, resulting in a suppressed nonradiative recombination and an improved charge extraction. Furthermore, the biocolina thin layer possess the capability to passivate the surface defects within the perovskite films while simultaneously facilitate the formation of perovskite crystals. Consequently, a remarkable enhancement in photovoltaic performance is observed in the biocolina-based ETL-free PSCs with an increase from 15.96 % to an outstanding 20.01 %. Additionally, the biocolina extends the stability and relieves the hysteresis effect through the interface defect passivation and inhibition of interface charge accumulation. This research contributes to the development of cost-effective, simplified designs for highly efficient ETL-free PSCs by modifying the bottom electrodes.

Oxygen Vacancy Mediation in SnO2 Electron Transport Layers Enables Efficient, Stable, and Scalable Perovskite Solar Cells.

Previous findings have suggested a close association between oxygen vacancies in SnO2 and charge carrier recombination as well as perovskite decomposition at the perovskite/SnO2 interface. Underlying the fundamental mechanism holds great significance in achieving a more favorable balance between the efficiency and stability. In this study, we prepared three SnO2 samples with different oxygen vacancy concentrations and observed that a low oxygen vacancy concentration is conducive to long-term device stability. Iodide ions were observed to easily diffuse into regions with high oxygen vacancies, thereby speeding up the deprotonation of FAI, as made evident by the detection of the decomposition product formamide. In contrast, a high oxygen vacancy concentration in SnO2 could prevent hole injection, leading to a decrease in interfacial recombination losses. To suppress this decomposition reaction and address the trade-off, we designed a bilayer SnO2 structure to ensure highly efficient carrier transport still while maintaining a chemically inert surface. As a result, an enhanced efficiency of 25.06% (certified at 24.55% with an active area of 0.09 cm2 under fast scan) was achieved, and the extended operational stability maintained 90% of their original efficiency (24.52%) after continuous operation for nearly 2000 h. Additionally, perovskite submodules with an active area of 14 cm2 were successfully assembled with a PCE of up to 22.96% (20.09% with an aperture area).

Synergistic effect of In2O3 nanocuboids and TiO2 nanocubes in electron transport bilayer for carbon-based perovskite solar cells

Bilayer-based electron transport layers (ETLs) are recently emerging due to their benefits in the efficient charge carrier extraction and transportation with diminished interfacial recombination loss. Here, the carbon electrode-based perovskite solar cells (C–PSCs) with mesoscopic bilayer-oriented ETLs using In2O3 nanocuboids and varied concentrations of TiO2 nanocubes were fabricated and their performances were evaluated. In2O3 nanocuboids and TiO2 nanocubes were synthesized through hydro and solvothermal routes respectively. The synthesized samples' structural, morphological, and optical behaviours were characterized by PXRD, FESEM, HRTEM and UV–Vis spectroscopy. With pertinent studies, the impact of all the variants of bilayer-based ETLs on the formation of the perovskite layer was thoroughly investigated. The device based on monolayer ETL has achieved power conversion efficiency (PCE) of 6.9 % with current density (Jsc) of 18.69 mA/cm2. The highest PCE of 10.7 % with Jsc of 22.15 mA/cm2 was achieved for the champion device with the optimized bilayer of In2O3/TiO2 (200 mg/ml). This champion device showed ambient stability (at 35 °C with ∼70 % humidity) of 83 % from its initial PCE for 35 days without any encapsulation. Thus, the suitable morphology of the bilayer-based ETL facilitated the interface passivation by the self-embedding process, which played a significant role in the improvement of the cell performance.

Influence of surface passivation by MgO on photovoltaic performance of SnO2 based dye-sensitized solar cells

The study highlights effect of surface modification of SnO2 photoelectrode by MgO coating on photovoltaic properties of dye-sensitized solar cells (DSSCs). A thin coating of MgO on SnO2 photoelectrode was prepared using sol-gel-derived dip coating technique. The bare SnO2 and MgO coated SnO2 composite photoanodes was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and UV–vis spectrophotometer. The optical absorption study revealed that the modification in SnO2 by MgO coating caused an increase in absorption by photoanode in visible region. The solar cell was demonstrated by preparing FTO|SnO2|Dye|MgO|Electrolyte|Pt coated FTO device structure and tested with current density-voltage (J-V) measurement. The effect of precursor concentration of MgO coating on the performance of DSSCs were investigated. It was found that, optimized coating of MgO for 90 seconds on SnO2 improved all photovoltaic parameters, resulting in enhancement in efficiency by 42% compared to that of DSSC with bare SnO2 photoanode. The coating of MgO would have reduced the trap states and suppressed interfacial recombination losses by preventing back electron transfer from the conduction band of the semiconductor to HOMO of dye molecule or redox species.

Effects of 3-Bromo-N-methylbenzylamine modification on CsPbI2Br perovskite films and perovskite solar cells

In this work, 3-Bromo-N-methylbenzylamine (3-B-N-MB) was designed to modify CsPbI2Br/hole transport layer interface to reduce the interfacial non-radiative recombination loss of all-inorganic CsPbI2Br perovskite solar cells (PSCs). The effects of 3-B-N-MB modification on the morphology, structure, optical absorption, defect concentration, carrier lifetime, energy level, hydrophobicity of CsPbI2Br perovskite film and device performance, and carrier dynamics, as well as their mechanisms were systematically studied. The results show that the lone pair electrons in the N atom of N-H group in strongly alkaline 3-B-N-MB is more conducive to coordinate with uncoordinated Pb2+/Cs+ in CsPbI2Br, meanwhile the H atom of N-H group in 3-B-N-MB can react with I−/Br− in CsPbI2Br through hydrogen bonding, passivating interface defects to increase grain size and enhance the crystallinity and density of CsPbI2Br films, optimizing interface energy level matching to promote carrier transport, thus suppressing interfacial non-radiative recombination to improve device performance. As a result, the PCE of the 3-B-N-MB modified PSCs significantly enhanced ∼32.5 % as compared to that of the pristine one and the air stability of the device has also improved. The 3-B-N-MB modification provides a new strategy to enhance the efficiency and stability of all-inorganic perovskite solar cells.

Managing Interfacial Defects and Charge-Carriers Dynamics by a Cesium-Doped SnO2 for Air Stable Perovskite Solar Cells.

A high-quality nanostructured tin oxide (SnO2) has garnered massive attention as an electron transport layer (ETL) for efficient perovskite solar cells (PSCs). SnO2 is considered the most effective alternative to titanium oxide (TiO2) as ETL because of its low-temperature processing and promising optical and electrical characteristics. However, some essential modifications are still required to further improve the intrinsic characteristics of SnO2, such as mismatch band alignments, charge extraction, transportation, conductivity, and interfacial recombination losses. Herein, an inorganic-based cesium (Cs) dopant is used to modify the SnO2 ETL and to investigate the impact of Cs-dopant in curing interfacial defects, charge-carrier dynamics, and improving the optoelectronic characteristics of PSCs. The incorporation of Cs contents efficiently improves the perovskite film quality by enhancing the transparency, crystallinity, grain size, and light absorption and reduces the defect states and trap densities, resulting in an improved power conversion efficiency (PCE) of ≈22.1% with Cs:SnO2 ETL, in-contrast to pristine SnO2-based PSCs (20.23%). Moreover, the Cs-modified SnO2-based PSCs exhibit remarkable environmental stability in a relatively higher relative humidity environment (>65%) and without encapsulation. Therefore, this work suggests that Cs-doped SnO2 is a highly favorable electron extraction material for preparing highly efficient and air-stable planar PSCs.

Enhanced Efficiency and Stability of Inverted Perovskite Solar Cells via Primary Amine Molecular Reaction.

The inverted perovskite solar cells have drawn considerable attention owing to their low cost, good compatibility, and easy production processes. However, the device performance is still limited by some important factors, such as surface imperfections and interfacial nonradiative recombination losses. Here, N-acetylethylenediamine (N-AE) is introduced to bind to the surface of the perovskite film via an ammonia condensation reaction. This process creates a stable interfacial layer with n-type doping to enhance the open-circuit voltage (VOC). Moreover, during post-treatment, N-AE dissolves a portion of the perovskite on the surface, leading to perovskite recrystallization. This process enhances the surface quality of the perovskite film and reduces nonradiative recombination. As a result, the inverted perovskite solar cell exhibits a power conversion efficiency approaching 20%, with a rise in VOC from 0.96 to 1.05 V. More impressively, the unencapsulated devices display excellent stability at 85 °C annealing and retained 88% of the initial PCE for 816 h.

Modulation on electrostatic potential to build a firm bridge at NiOx/perovskite interface for efficient and stable perovskite solar cells

The NiOx/perovskite interface in NiOx-based inverted perovskite solar cells (PSCs) is one of the main issues that restrict device performance and long-term stability, as the unwanted interfacial defects and undesirable redox reactions cause severe interfacial non-radiative recombination and open-circuit voltage (Voc) loss. Herein, a series of self-assembled molecules (SAMs) are employed to bind, bridge, and stabilize the NiOx/perovskite interface by regulating the electrostatic potential. Based on systematically theoretical and experimental studies, 4-pyrazolecarboxylic acid (4-PCA) is proven as an efficient molecule to simultaneously passivate the NiOx and perovskite surface traps, release the interfacial tensile stress as well as quench the detrimental interface redox reactions, thus effectively suppressing the interfacial non-radiative recombination and enhancing the quality of perovskite crystals. Consequently, the PSCs with 4-PCA treatment exhibited an eminently increased Voc, leading to a significant increase in power conversion efficiency from 21.28% to 23.77%. Furthermore, the unencapsulated devices maintain 92.6% and 81.3% of their initial PCEs after storing in air with a relative humidity of 20%–30% for 1000 h and heating at 65 °C for 500 h in a N2-filled glovebox, respectively.

Highly Efficient and Scalable p-i-n Perovskite Solar Cells Enabled by Poly-metallocene Interfaces.

Inverted p-i-n perovskite solar cells (PSCs) are easy to process but need improved interface characteristics with reduced energy loss to prevent efficiency drops when increasing the active photovoltaic area. Here, we report a series of poly ferrocenyl molecules that can modulate the perovskite surface enabling the construction of small- and large-area PSCs. We found that the perovskite-ferrocenyl interaction forms a hybrid complex with enhanced surface coordination strength and activated electronic states, leading to lower interfacial nonradiative recombination and charge transport resistance losses. The resulting PSCs achieve an enhanced efficiency of up to 26.08% for small-area devices and 24.51% for large-area devices (1.0208 cm2). Moreover, the large-area PSCs maintain >92% of the initial efficiency after 2000 h of continuous operation at the maximum power point under 1-sun illumination and 65 °C.

Custom-tailored hole transport layer using oxalic acid for high-quality tin-lead perovskites and efficient all-perovskite tandems.

All-perovskite tandem solar cells (TSCs) have exhibited higher efficiencies than single-junction perovskite solar cells (PSCs) but still suffer from the unsatisfactory performance of low-bandgap (LBG) tin-lead (Sn-Pb) subcells. The inherent properties of PEDOT:PSS are crucial to high-performance Sn-Pb perovskite films and devices; however, the underlying mechanism has not been fully explored and revealed. Here, we report a facile oxalic acid treatment of PEDOT:PSS (OA-PEDOT:PSS) to precisely regulate its work function and surface morphology. OA-PEDOT:PSS shows a larger work function and an ordered reorientation and fiber-shaped film morphology with efficient hole transport pathways, leading to the formation of more ideal hole-selective contact with Sn-Pb perovskite for suppressing interfacial nonradiative recombination losses. Moreover, OA-PEDOT:PSS induces (100) preferred orientation growth of perovskite for higher-quality Sn-Pb films. Last, the OA-PEDOT:PSS-tailored LBG PSC yields an impressive efficiency of up to 22.56% (certified 21.88%), enabling 27.81% efficient all-perovskite TSC with enhanced operational stability.

Cross‐layer all‐interface defect passivation with pre‐buried additive toward efficient all‐inorganic perovskite solar cells

AbstractThe buried interface in the perovskite solar cell (PSC) has been regarded as a breakthrough to boost the power conversion efficiency and stability. However, a comprehensive manipulation of the buried interface in terms of the transport layer, buried interlayer, and perovskite layer has been largely overlooked. Herein, we propose the use of a volatile heterocyclic compound called 2‐thiopheneacetic acid (TPA) as a pre‐buried additive in the buried interface to achieve cross‐layer all‐interface defect passivation through an in situ bottom‐up infiltration diffusion strategy. TPA not only suppresses the serious interfacial nonradiative recombination losses by precisely healing the interfacial and underlying defects but also effectively enhances the quality of perovskite film and releases the residual strain of perovskite film. Owing to this versatility, TPA‐tailored CsPbBr3 PSCs deliver a record efficiency of 11.23% with enhanced long‐term stability. This breakthrough in manipulating the buried interface using TPA opens new avenues for further improving the performance and reliability of PSC.

Efficient Electron Transfer across Strontium Titanate Decorated Graphene Oxide for High‐Performance Dye‐Sensitized Solar Cells and Photocatalytic Degradation of Dye and Antibiotic

AbstractUnderstanding synergistic interface features is a crucial step towards adjustable and controllable interfaces for photocatalytic and photovoltaic devices. In this work, a novel layer‐structured rGO hybrid with SrTiO3 (STO/rGO) based binary composite has developed via hydrothermal method. The highly stable STO/rGO is used to construct a dual‐functional platform for dye, antibiotic degradation and DSSC. The photocatalytic activities of STO/rGO composites were examined using Methylene Blue (MB) and Tetracycline (TC) degradation in an aqueous solution under white light irradiation. The catalyst containing STG‐3 exhibited outstanding photocatalytic degradation efficiency of 93.06 % and 95.23 % toward MB and TC, respectively. In addition, the hybrid composites‐based photoanode had the most outstanding efficiency of 3.74 % with an increase in JSC. The performance is far better than pristine STO. The improved efficiency is ascribed to the strong interconnectivity, excellent crystallinity, higher surface area and high porosity, which results in reduced interfacial charge recombination loss, outstanding dye adsorption and better electron transport. Furthermore, a predicted mechanism is provided to explain the higher performance of STO/rGO hybrid composites.

DTBDT‐Based Polymer Hole Transport Materials for Low Voltage Loss CsPbI2Br Perovskite Solar Cells

AbstractThe power conversion efficiency (PCE) of CsPbI2Br perovskite solar cells (PSCs) is still far from the theoretical efficiency due to the pronounced losses in open‐circuit voltage (VOC). The VOC loss can be mitigated by employing an appropriate hole transport layer (HTL), which facilitates energy level alignment and minimizes interface recombination losses. In this work, two D‐π‐A type polymers are chosen, PE64 and PE65, as HTLs, where pentacyclic dithieno[2,3‐d; 2′,3′‐d “]benzo[1,2‐b; 4,5‐b”]dithiophene (DTBDT) as the D‐unit and quinoxaline (Qx) as the A‐unit. It is demonstrated that the polymer PE65 with chlorinated thiophene side chain on the DTBDT unit has an optimized molecular arrangement, improved energy level matching, and enhanced passivation with CsPbI2Br, effectively reducing the losses caused by radiative and non‐radiative recombination in CsPbI2Br PSCs. Finally, the CsPbI2Br PSCs utilizing PE65 as HTL achieve a power conversion efficiency (PCE) of 17.60% with a high VOC of 1.44 V. Furthermore, the PE64 and PE65 are also employed to construct inter‐connecting layers (ICLs) for tandem solar cells (TSCs). The CsPbI2Br/D18:Y6 TSCs based on PE65‐ICL yield a PCE of 22.32% with a high VOC of 2.25 V. This work demonstrates that pentacyclic DTBDT‐based polymers are also promising HTLs for high‐performance PSCs and TSCs.

Pre‐Embedded Multisite Chiral Molecules Realize Bottom‐Up Multilayer Manipulation toward Stable and Efficient Perovskite Solar Cells

AbstractThe defects from functional layers and interface, the agglomeration of SnO2 nanoparticles (NPs), and poor perovskite crystallization are the main barrier to further heightening the power conversion efficiency (PCE) and stability of regular perovskite solar cells. Here, a bottom‐up multilayer manipulation strategy by pre‐embedding multisite racemic DL‐cysteine hydrochloride monohydrate (DLCH) into the SnO2 electron transport layer (ETL) is reported. The positively and negatively charged defects from ETL, perovskite layer and their interface can be passivated through the synergistic effect of the ─SH, ─COOH, ─NH3+, and Cl− groups in DLCH. The synergy of multiple functional groups and multiple chemical bonds enables bottom‐up cross‐layer passivation, which minimizes bulk and interfacial nonradiative recombination losses. Furthermore, the multifunctional DLCH plays a role in inhibiting the agglomeration of SnO2 NPs, managing photons, relieving interfacial tensile stress, and manipulating perovskite crystallization. Benefiting from the above advantages, the DLCH‐incorporating device delivers a PCE of 24.01%, which is much higher than the 21.61% of the control device. Moreover, the DLCH‐modified devices demonstrate inviting thermal and ambient stabilities by maintaining 93% of the initial efficiency after aging at 65 °C for 1800 h and 95% of the original PCE after aging under a relative humidity of 20–25% for 2000 h.

Simultaneous realization of bulk and interface regulation based on 2,4-diamino-6,7-diisopropylpteridine phosphate for efficient and stable inverted perovskite solar cells

A facile interface strategy based on 2,4-diamino-6,7-diisopropylpteridine phosphate is proposed to simultaneously regulate the bulk and interface recombination loss in the inverted perovskite solar cells.