IGBT Research Articles

A fast-switching and ultra low-loss snapback-free reverse-conducting SOI-LIGBT with Adjustable Carrier Technology

A snapback-free Reverse-Conduction Silicon On Insulator Lateral Insulate Gate Bipolar Transistor (RC SOI-LIGBT) with Adjustable Carrier Technology (ACT LIGBT) is proposed in this paper. ACT LIGBT adds Semi-Insulating Polycrystalline Silicon (SIPOS) material on the extended gate dielectric, and introduces the potential of the surface SIPOS into the P-type drift region (P-Drift) through SiO2 trenches. ACT LIGBT generates the inversion layer of electrons in the P-Drift due to the linear potential distribution brought by the high resistance characteristic of SIPOS, resulting in the adjustment of the number of electrons and holes, and forming the technology of ACT. Additionally, ACT LIGBT adds a hole extraction path during it turned off. Meanwhile, compared to SSA LIGBT, ACT LIGBT optimized the BV (700V) by 34 %, while also optimizing the Von (1.69V) by 25 %, turn-off time (toff = 12ns) by 92 %, turn-off loss (Eoff = 0.69 mJ/cm2) by 79 %, and reverse recovery charge (Qrr = 32.98 μC/cm2) by 32.5 %, ultimately achieving a better compromise relationship among BV, Von, toff, Eoff, and Qrr.

Exploring Influential Factors Affecting Baseplate Distortion and Residual Stress in Insulated-Gate Bipolar Transistor (IGBT) Modules During Reflow Soldering

Exploring Influential Factors Affecting Baseplate Distortion and Residual Stress in Insulated-Gate Bipolar Transistor (IGBT) Modules During Reflow Soldering

Research on characteristics of radio interference of MMC-HVDC lines

Abstract Previous research on radio interference in DC lines has focused on radio interference caused by corona discharge. But with the development of Modular Multilevel Converter Based High Voltage Direct Current (MMC-HVDC) systems, high frequency signals generated by fast switching of Insulate-Gate Bipolar Transistor (IGBT) are transmitted to Direct Current (DC) lines and radiate radio interference outward. On the one hand, the radio interference formula recommended by the dual-level DC transmission line recommended by International Special Committee on Radio Interference (CISPR) is calculated by the radio interference generated by the line corona discharge; On the other hand, by establishing a MMC-HVDC line model, analyse the high frequency signal transmission generated by the fast switching of IGBT in the Modular Multilevel Converter (MMC) to the radio interference generated by radiating outside the DC line. The results of the study show that the radio interference generated by high -frequency signals of IGBT fast switching will decrease with the length of the line. The radio interference value generated by corona discharge is 47.43 dB(μV/m), the radio interference generated by the high-frequency signal of IGBT fast switching is 40.83 dB(μV/m), which is too small than the radio interference of corona discharge.

Evaluation of safety and efficacy of insulated-gate bipolar transistor holmium laser technology for prostate enucleation in canine model: a preliminary study.

The evolution of laser medical devices for benign prostatic hyperplasia (BPH) treatment aims to enhance vaporization, coagulation, or tissue removal. In this study, we aim to evaluate the effectiveness and safety of the innovative application of insulated-gate bipolar transistor (IGBT) xenon lamp-pulsed drive technology holmium laser in endoscopic prostate enucleation operations using canine models. Six canines were used as an experimental unit, the breed of the canine unit used was beagle. Each canine served as its own control to minimize the number of experimental units. Endoscopic enucleation, performed by a single surgeon, involved enucleating the left hemi-prostate, leaving the right hem-prostate untouched to serve as the control. Throughout the study period, all canines maintained good health. No adverse events were observed in all six canines. Postoperatively, there were no indications of redness, swelling, or other adverse effects at the surgical sites. No abnormalities were observed in the appearance and morphology of major organs. The prostate and bladder, removed for further pathological evaluation, exhibited no abnormalities in size, color, or texture. No abnormalities or inflammation were observed, and the tissues were free of adhesions, indicating successful healing. In conclusion, our comparison of preoperative and postoperative parameters in canines suggests that the IGBT pulsed laser, at a power setting of 100W, demonstrates characteristics of safety, efficacy, minimal tissue damage, and no major postoperative complications. This study establishes a theoretical foundation for future applications in human settings, encouraging further exploration of the IGBT holmium laser's potential in clinical practice.

Prediction of IGBT Gate Oxide Layer's Performance Degradation Based on MultiScaleFormer Network.

Insulated gate bipolar transistors (IGBTs) are widely used in power electronic devices, and their health prediction problems have attracted much attention in the field of power electronic equipment health management. The performance degradation of IGBT gate oxide is one of the most important failure modes. In order to analyze this failure mechanism and the ease of implementation of a monitoring circuit, the gate leakage current of IGBTs was selected as the fault precursor parameter for the degradation of their gate oxide performance, and feature selection and fusion were carried out by using time domain characteristic analysis, grayscale correlation, Mahalanobis distance, Kalman filter, and other methods. Thus, a health indicator was obtained to characterize the degradation of IGBT performance, which was used to indicate the degree of aging of the IGBT gate oxide layer. In this paper, we propose an improved degradation prediction model called MultiScaleFormer, inspired by advanced design ideas of the iTransformer network architecture, combined with the health parameters of IGBTs to construct a degradation prediction model for the IGBT gate oxide layer. MultiScaleFormer showed the highest fitting accuracy compared with the Long Short-Term Memory (LSTM), Convolutional Neural Network (CNN), Support Vector Regression (SVR), Gaussian Process Regression (GPR), CNN-LSTM, and Transformer models in our experiment. The mean absolute error (MAE) of the MultiScaleFormer prediction was as low as 0.0087. Extraction of the health indicator and the construction and verification of the degradation prediction model were carried out on the dataset released by the NASA-Ames Laboratory. These results demonstrate the feasibility of the gate leakage current as a fault precursor parameter for IGBT gate oxide failure, and the feasibility and accuracy of the MultiScaleFormer prediction model for IGBT performance degradation.

Multi-Physics Coupling in IGBT Modules: A Review

Abstract Since insulated gate bipolar transistor (IGBT) is a core component for power conversion in a power electronic system, guaranteeing the safety of IGBT becomes a crucial task for the maintenance of the power system. However, the mechanism of IGBT failure is a considerably complicated process related to the dynamic process, involving electric, thermal, and force. Hence, understanding the behaviors of IGBT under multi-physics field coupling plays an important role in the design and reliability studies of IGBT. In this paper, we review the multi-physics coupling effects, namely, electric-thermal coupling, thermal-force coupling, and force-electric coupling, inside IGBT devices. The basic principles of each coupling, coupling models, application occasions as well as key issues and development trends are discussed in detail, respectively.

A fast-switching low-loss field-stop IGBT with dual control gate of SIPOS material

A fast-switching low-loss field-stop insulated gate bipolar transistor with a dual control gate (DIGBT) of a semi-insulating polycrytalline silicon (SIPOS) material is proposed in this paper. Because the SIPOS has uniform high resistance, it has an approximate linear electric potential distribution. When DIGBT conducts, the higher electric potential on SIPOS causes the P-type drift region (P-drift) to generate an inversion layer of electrons, adjusting the number of carriers and making the generation of non-equilibrium carriers no longer dependent on the doping concentration in P-drift (Nd) but on the electric potential distribution on SIPOS. Therefore, it can solve the contradiction among the breakdown voltage, forward voltage drop [VCE(sat)], turn-off time (toff), and turn-off loss (Eoff) caused by the Nd. Through Technology Computer Aided Design (TCAD) simulation, the VCE(sat) of DIGBT is 30.6% lower than that of SJFS IGBT. Meanwhile, DIGBT reduces the toff by 62.8% while reducing the Eoff by 83.0% compared to SJFS IGBT. In addition, the static latch-up I–V and the forward biased safe operating area of the DIGBT have been significantly improved. This paper adjusts the number of carriers through the characteristics of SIPOS material, enabling the above-mentioned physical phenomena to be applied in insulated gate bipolar transistor power devices and achieving device performance breakthroughs.

Stabilized voltage source inverter for sensitive loads in nuclear installations

The present paper proposes a novel design of a stabilized single-phase voltage-source inverter with pure sinusoidal output voltage for photovoltaic systems employed for feeding sensitive loads in nuclear installations. Such types of loads require a voltage source with quite stabilized magnitude and frequency and pure sinusoidal shape that is free from higher-order harmonics. The inverter is based on an H-bridge four insulated gate bipolar transistors (IGBTs) with gate drivers and optocoupler isolators. A control system based on a fast DSP unit and a microcontroller is designed for cancelation of the higher-order harmonics to produce a pure sinusoidal output with almost zero total harmonic distortion (THD). The sinusoidal purity, frequency and magnitude stabilization are achieved through pulse width modulation (PWM) controlled by a fast-response feedback system that measures the time wave form of the output voltage applied to the load and then calculates the THD, frequency and amplitude. The sinusoidal shaping is performed with aid of a sinusoidal shaping filter (SSF) to fasten the operation of higher-order harmonic cancellation. The frequency measurement is achieved through a frequency counter whereas the amplitude measurement is carried out through a differential amplifier that amplifies the difference between the output voltage of the inverter (while being applied to the load) and reference voltage that determines the desired amplitude. A prototype of the entire system of the proposed voltage-source inverter is fabricated for experimental evaluation of its performance. It is shown through simulation and experimental work that the proposed control system of the inverter output voltage is able to stabilize both the amplitude and frequency of the voltage applied to the load irrespective of the load impedance. Also, it is shown that the THD of the output voltage is -57dB\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$-57 \ ext{ dB}$$\\end{document} (0.00025%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$0.00025 \\%$$\\end{document}), which is almost zero. Moreover, the switching losses are considerably reduced and can be negligible owing to the use of the appropriate IGBTs. The efficiency of the proposed inverter is obtained by simulation taking into account all types of losses. Also, the dependence of the inverter efficiency on the load current is investigated. The average efficiency of the proposed voltage-source inverter is shown to be higher than 97%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$97\\%$$\\end{document}.

Multi-objective topology optimization design of silicon carbide metal oxide semiconductor field effect transistors power module liquid-cooled heatsink for electric vehicles

Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) is gradually replacing silicon-based insulated gate bipolar transistor (IGBT) as the switching devices in electric vehicle power inverters due to its higher operating temperatures, switching speeds, and frequencyies. However, the high switching frequency of SiC MOSFETs can increase the losses of the power inverter, resulting in an increase in the temperature, which will limit the performance of power inverters. The improvement of power module performance is mainly controlled by optimizing its control methods during operation and improving its cooling system. Currently, the liquid-cooled heatsink used in power modules have disadvantages such as large flow resistance and poor heat dissipation performance. In order to enhance the performance of the heatsink, this study first established a three-dimensional finite element model of SiC MOSFETs power module based on a pin fin heatsink. The accuracy of the model was verified by numerical and experimental methods. Secondly, based on numerical analysis, a multi-objective topology optimization method for the power module liquid-cooled heatsink is proposed. This method takes heat exchange and fluid dissipation energy as the objective function and uses weight factors to adjust the influence of each on the objective functions. Additionally, the temperature distribution of the heatsink is considered to optimize its performance. Finally, the numerical results show that the topology-optimized heatsink exhibits better performance at high coolant volumetric flow rates. When the coolant volumetric flow rate is 14 L/min, the pressure drops of topology-optimized heatsink is reduced by 63.94 % and the junction temperature of the power module is reduced by 0.24 % compared with the pin fin heatsink. This topologically optimized heatsink could be helpful to improve the performance of existing power module heatsinks.

Performance evaluation and stability analysis of super-junction IGBTs in high-temperature environments

Abstract This paper aims to evaluate and analyze the performance and stability of super-junction IGBTs (Insulated Gate Bipolar Transistors) in high-temperature environments. The study begins with an overview of the significance of IGBTs in the field of power electronics. It provides a comprehensive discussion of the advantages of super-junction technology and the challenges posed by high temperatures on the performance of IGBTs. Through a series of experiments on various commercial super-junction IGBT models, this research thoroughly assesses the devices’ saturated current, threshold voltage, leakage current, switching time, and switching losses at different temperature points (25°C, 75°C, 125°C, and 175°C). The experimental results demonstrate a significant impact of high temperatures on the performance of IGBTs, particularly in terms of changes in saturated current and threshold voltage. Additionally, the study predicts the lifespan of super-junction IGBTs through High-Temperature Operating Life (HTOL) testing and analyzes the failure modes in high-temperature environments. The results indicate that the expected lifespan of the devices significantly decreases with increasing temperature, with primary failure modes including degradation of the gate oxide layer, an increase in interface traps, and disruption in conductive pathways. The paper also compares experimental results with existing literature, emphasizing the potential and importance of optimized design for super-junction IGBTs in high-temperature environments. The study suggests that improvements in materials, structural design, manufacturing processes, and innovative cooling technologies can further enhance the performance and stability of IGBTs in high-temperature applications. Finally, this research provides new insights into the development of super-junction IGBTs in high-temperature power applications and offers valuable references for professionals in related fields.

Development of a pulsed magnetic field power supply for small size Betatron

In this paper, we present a new structure of capacitor-inductor discharge circuit and develop a pulsed magnetic field power supply for small size Betatron, addressing the urgent need for adjustable pulsed radiation frequencies. The proposed power supply employs insulated gate bipolar transistors (IGBTs) to control the discharge of the energy storage capacitor to the excitation winding, thus generating a pulsed current, which produces a pulsed magnetic field and accelerates the electrons. By adjusting the operating frequency of the IGBTs, the frequency of the pulsed current, and consequently the accelerator pulsed radiation frequency, can be regulated. The proposed design employs dual sustained paths, which are formed by the energy storage capacitor and the excitation winding, as well as a loss-compensation capacitor with the excitation winding. By adjusting the loss-compensation time, the problem of the pulsed current amplitude attenuation due to losses can be overcome, ensuring the stability of the pulsed magnetic field. Experimental results show that the power supply produces a pulsed current up to 220 A, which accelerates the electrons to 6.2 MeV, allowing the accelerator pulsed radiation frequency to be adjusted within a 333-Hz range. The proposed power supply makes small size Betatron suitable for a wide range of applications and provides technical knowledge for other types accelerators.

A junction temperature model based on heat flow distribution in an IGBT module with solder layer voids

The presence of voids in a solder layer affects the thermal reliability of an insulated-gate bipolar transistor (IGBT). In this work, the effects of the size and fraction of solder layer voids and the power losses of chips on heat flow distribution, junction temperature and thermal resistance were investigated. It was found that it was difficult for the heat to flow through the voids due to the high thermal resistance of air. Therefore, the heat above the voids could only flow horizontally, and then avoid the voids and move downward in the solder layer and the following layers, leading to a temperature difference in the surface chip layer. An improved junction temperature model based on the heat flow distribution (HD) considering the solder layer voids was established, the horizontal thermal resistance and horizontal heat capacity are introduced to characterize the effect of the solder layer voids, and the parameter extraction method was proposed. The temperature difference on the surface of the module increased with the increase of the void fraction, and when the void fraction increased from 0 % to 40 %, the surface temperature difference increased from 9.591 °C to 109.86 °C. The results showed that the proposed model not only had a higher accuracy in the estimation of the junction temperature compared with the traditional Cauer model and the improved Cauer model, but also monitored the horizontal temperature differences in the chip layer precisely.

Thermal and energy performance characteristics of spiral-wing pin-fin heatsinks for liquid cooling of electronic devices in electric vehicles

Insulated gate bipolar transistors (IGBTs) are crucial components of electric vehicles (EVs) that regulate power. Liquid cooling has emerged as a cooling solution for high-power IGBTs in EVs. Although several pin-fin heatsinks (PFHs) have been developed to enhance cooling performance, comprehensive research on PFHs for IGBTs under liquid-cooling conditions is limited. This study investigated the cooling performance improvement of spiral-wing pin-fin heatsinks (SWPFHs) against conventional PFHs under liquid-cooling conditions. Using the developed simulation model, the optimal design of the SWPFH was determined to achieve the maximum Webb efficiency, which indicates the heat transfer capacity at the same power consumption. Furthermore, the heat transfer performance of the optimized SWPFH was compared with those of conventional PFHs with circular, square, and hexagonal pin-fin heatsinks under practical Reynolds numbers. The optimized SWPFH exhibited the lowest maximum temperature and standard temperature deviation among the conventional PFHs. The Webb efficiency of the optimized SWPFH was 21.9% higher on average than that of the conventional circular pin-fin heatsink (CPFH) owing to the enhanced mixing effects with the reduced wake region. Overall, the use of SWPFH for cooling IGBTs in EVs is recommended to improve the thermal performance of the CPFH under the same pumping power.

Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study

With the increase in voltage level and current capacity of the insulated gate bipolar transistor (IGBT), the avalanche effect has become an important factor limiting the safe operating area (SOA) of the device. The hole injection into the p/n junction on the backside of the IGBT after avalanche is the main feature that distinguishes the avalanche effect from other devices. In this paper, the avalanche breakdown characteristics of IGBT and the nature of current filament are investigated using theoretical analysis and numerical simulation, and the underlying physical mechanism controlling the nature of current filaments is revealed. The results show that the hole injection on the backside of the IGBT leads to an additional negative differential resistance (NDR) branch on the avalanche breakdown curve. The device’s common-base current gain, αpnp, is a crucial factor in determining the current filament. As αpnp increases, the avalanche-induced current filament becomes stronger and slower, resulting in weaker avalanche robustness of the device.

A diagnostic strategy for IGBT open-circuit faults in modular multilevel converters based on improved diagnostic indices

Capacitor voltage deviations between two submodules (SMs) are always used as the diagnostic index for the insulated gate bipolar transistor (IGBT) open-circuit fault diagnosis in modular multilevel converters (MMCs). However, it is difficult to determine when MMCs operate in different conditions. To solve this issue, this article proposes a diagnostic strategy for IGBT open-circuit faults in MMCs based on improved diagnostic indices. First, two diagnostic indices, i.e., the concept of the count of periods during which the switching function is fixed (CSF) and capacitor voltage sorting sequence number (CSN) are proposed. On this basis, fault detection is implemented by judging the changing trend of the CSN in the SM whose CSF is the highest. The remaining malfunctioning SMs are located in turns by a similar process to fault detection. The proposed diagnostic indices show consistent faulty characteristics under different operating conditions, thus avoiding readjusting the threshold according to different operating conditions. In this sense, the proposed strategy can be easily used and promoted in different operating scenarios. Experimental results in a hardware-in-the-loop (HIL) platform verify the effectiveness of the proposed strategy.

A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study

A novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thinner drift region under the same breakdown voltage. In the on state, an electron accumulation layer is formed along the SIPOS, which can increase the injection level of the “PiN region” in the device, and the carrier concentration in the drift region is also increased due to the charge balance effect. Moreover, the SIPOS-IGBT can achieve a quick and thorough depletion in the drift region during the turn-off transient, which can greatly reduce the turn-off loss of the SIPOS-IGBT. These advantages improve the tradeoff between the conduction and switching losses. According to the simulation results, the SIPOS-IGBT obtained a 58% lower turn loss than that of a field-stop (FS) IGBT and 30% lower than an HK-IGBT with the same on-state voltage.

Impact of Solder Voids on IGBT Thermal Behavior: A Multi-Methodological Approach

This study investigates the thermal behavior of Insulated Gate Bipolar Transistors (IGBTs) with a focus on the influence of solder voids within the device. Utilizing a combination of Finite Element Method (FEM) simulations, X-ray imaging, and SEM-EDX analysis, we accurately modeled the internal structure of IGBTs to assess the impact of void characteristics on thermal resistance. The findings reveal that the presence and characteristics of solder voids—particularly their size, number, and distribution—significantly affect the thermal resistance of IGBT devices. Experimental measurements validate the FEM model’s accuracy, confirming that voids disrupt the heat flow path, which can lead to increased thermal resistance and potential device failure. Five regression models, including Gaussian process regression (GPR) and neural networks, were employed to predict the thermal resistance based on void characteristics, with the GPR models demonstrating superior performance. The optimal GPR RQ model consistently provided accurate predictions with an RMSE of 0.0050 and R2 of 0.9728. Using the void percentage as the only input parameter for the regression models significantly impacted the prediction accuracy, showing the importance of the void extraction method. This study shows the necessity of minimizing solder voids and offers a robust methodological framework for a better prediction of the reliability of IGBTs.

Solder Defect Assessment Method for Power Electronic Devices Based on Mechanical Stress Wave Signals

The health of a power electronic device is closely related to the mechanical stress waves released at the moment when the device is turned on and off. Research has shown the potential of mechanical stress waves in power electronic device health monitoring. However, the correlation between power device defect severity and mechanical stress wave signal characteristics has not been fully established and an effective evaluation method is currently lacking. This article uses finite element simulation methods to explore the impact of void defects in the chip solder and base plate solder of insulated gate bipolar transistor (IGBT) devices on mechanical stress wave signals. By analyzing the mechanical stress wave curves of cavity defects of multiple sizes, a method for assessing the health status of power devices based on principal component analysis (PCA) is proposed. By calculating the projection of the mechanical stress wave signal on the principal component, the characteristic quantity representing the severity of the defect is obtained. Simulation results indicate that for chip soldering defects, as the severity of defects increases, the feature values gradually decrease. Therefore, this method exhibits good evaluation performance for defects throughout the entire lifecycle. In the case of plate solder defects, this approach can effectively identify mid-to-late-stage defects in devices and can also be utilized for reliability prediction before device failure.

Fundamental frequency switching strategies of a seven level hybrid cascaded H-bridge multilevel inverter

This paper presents a novel hybrid cascaded H-bridge multilevel inverter (HCHB MLI) designed to address the growing importance of multilevel inverters in the context of renewable energy sources such as solar, wind, and fuel cells. The proposed topology features eight insulated-gate bipolar transistor (IGBT) switches and utilizes two distinct input direct current (DC) sources: a battery and a capacitor, making it a hybrid system. The control strategy employed in this topology is based on fundamental switching frequency techniques. Simulation results of the proposed topology are conducted using MATLAB/Simulink software, while hardware experimentation with a single-phase H-bridge inverter is also demonstrated in the paper. For pulse generation and IGBT switch control, an Arduino UNO microcontroller is utilized. The output voltage of the single-phase H-bridge inverter is verified through experimentation using a cathode-ray oscilloscope (CRO).

Experimental and numerical investigation on turbulent convection enhancement in minichannel heat sink with staggered V-shaped pin fins

With the continuous advancements in new energy vehicle technology, the insulated gate bipolar transistor (IGBT) thermal properties have a direct impact on power system reliability. In this article, a minichannel heat sink with staggered V-shaped pin fins (SVPF) is investigated through both experimental and numerical approaches. Initially, the heat transfer performance of SVPF and conventional minichannel heat sink was analyzed using the CFD numerical simulation method. Subsequently, numerical and experimental validation was carried out by assessing the Nusselt number and turbulence characteristics of SVPF. Finally, an in-depth analysis was conducted to investigate the effects of SVPF geometric parameters on the turbulent characteristics and heat transfer performance of the minichannel heat sink. The results demonstrate that SVPF exhibits superior hydrothermal performance, which could maintain better heat transfer performance while simultaneously reducing the friction factor of minichannels. These findings provide valuable insights for the design of three-dimensional pin fins minichannels heat sink.