Insulated Gate Bipolar Transistor Modules Research Articles

Influence of different vibration directions on the solder layer fatigue in IGBT modules

Insulated-gate bipolar transistor (IGBT) modules are extensively utilized in high-speed trains, ships, and electric vehicles. Compared to those used in power systems, IGBT modules in these applications are more susceptible to vibration effects on their reliability. This paper proposes a multi-physics field simulation method and a lifetime model for IGBT modules to assess the impact of different vibration directions on solder layer fatigue. Initially, a multi-physics field model of the IGBT module is developed, incorporating electrical, thermal, mechanical, and vibration coupling. The effectiveness of this multi-physics simulation model is verified by an experimental platform. Subsequently, the influence of different vibration directions on solder layer fatigue in the IGBT module is analysed, and a life model of the IGBT is proposed through simulation. Finally, a power cycling with a vibration environment experimental platform is established to validate the effect of vibration on solder layer fatigue in the IGBT module. The simulation and experimental results indicate that vertical vibration accelerates the solder layer fatigue of IGBT modules, and the lifetime of an IGBT module operating under vertical vibration at 30 Hz is about 15 % shorter than that of an IGBT module operating under power cycling alone. The error between the calculated results of the solder layer failure and the experimental result is <5 %.

Reliability Simulation of IGBT Module with Different Solders Based on the Finite Element Method

The interconnecting solder is a key control factor for the reliability of electronic power packaging because it highly affects the junction temperature of insulated-gate bipolar transistor (IGBT) modules and is prone to plasticity, creep, and other failure behaviors under temperature-change environments. In this paper, the interconnecting performance and fatigue life of five different kinds of solders such as SAC305, sintered silver, Au80Sn20, sintered copper, and pure In under direct current (DC), power cycle, and electro-thermal coupling complex environments were studied based on electro-thermal multi-physical field coupling finite element simulation method, respectively. Results show that the sintered silver owns the most outstanding thermal reliability and the DC operating junction temperature of the IGBT module after utilizing sintered silver solder is only 90.2 °C, which is nearly 15 °C lower than that of the IGBT module utilizing SAC305 solder. Furthermore, in the power cycle reliability test, the fatigue life of Au80Sn20 solder reaches a maximum of 3.26 × 107 cycles while the life of indium presents only 5.85 × 103 cycles, a difference of nearly four orders of magnitude. Finally, under the complex environment of electro-thermal coupling, the fatigue life of Au80Sn20 solder is also the largest at 1.9 × 106 cycles, while the smallest life of solder becomes SAC305 solder at 4.44 × 102 cycles. The results of this paper can provide a theoretical basis for solder selection and life prediction of the IGBT module, which is of great significance in improving the reliability of power electronic packaging.

Research and Analysis of Liquid Cooling Heat Dissipation Equipment for Insulated-Gate Bipolar Transistor Modules of Wind Power Converters Based on the Finite Element Analysis Method

The primary objective of this study is to develop a simulation model for a liquid cooling plate (LCP) for insulated-gate bipolar transistor (IGBT) modules, with the aim of reducing the operating temperature of wind power converters (WPCs). The initial impetus for this study was the observation that the energy conversion efficiency of a WPC declines when the operating temperature of the IGBT module exceeds a critical threshold. Three LCPs, with and without heat sinks, were modelled under extreme conditions using the finite element simulation method. The effect of the number and height of the fins on the cooling efficacy was evaluated through the simulation and analysis of the LCP model with heat sinks. The results demonstrate that the optimal configuration, comprising five 10 mm fins and 13 10 mm struts, can achieve the following reductions: maximum temperature by 11.4 K, heat dissipation efficiency by 3.33%, pressure drop by 10.6 KPa, and pump power by 31.00%. Moreover, the findings suggest that the number of fins has a significant impact on temperature fluctuations, whereas the height of the fins exerts a markedly significant influence on pressure drop.

An IGBT coupling structure with a smart service life reliability predictor using active learning

Abstract An effective approach is proposed to evaluate the service life reliability of a multi-physics coupling structure of an insulated gate bipolar transistor (IGBT) module. The node-based smoothed finite element method with stabilization terms is firstly employed to construct an electrical-thermal-mechanical (ETM) coupling structure of the IGBT module, based on which the multi-physics responses can be accurately calculated to predict the service life of the IGBT module. By using the high-quality sample data obtained through the ETM coupling model, a Monte Carlo based active learning Kriging metamodel (AK-MCS) is developed to assess the service life reliability of the IGBT module, which can greatly reduce the computational cost needed by the surrogate model construction and reliability analysis. Numerical results show that the proposed ETM coupling structure can produce high-quality sample data of the IGBT dynamics and the AK-MCS machine learning technique can accurately estimate the service life reliability of the IGBT module.

Research on Gate Charge Degradation of Multi-Chip IGBT Modules in Power Supply for Unmanned Aerial Vehicles

In recent years, with the burgeoning application of high voltage in various industrial sectors, the deployment of unmanned equipment, such as industrial heavy-load Unmanned Aerial Vehicles (UAVs), incorporating high-capacity Insulated-Gate Bipolar Transistors (IGBTs), has become increasingly prevalent. The demand for high-voltage IGBT modules in UAV is continuously growing; therefore, exploring methods to predict fault precursor parameters of multi-chip IGBT modules is crucial for the operational health management of unmanned equipment like UAVs. This paper analyzes the gate charge degradation in multi-chip IGBT modules after thermal cycling, which can be used to evaluate the operational state of these modules. Furthermore, to delve into the electrical response of a gate drive circuit caused by local damage within the IGBT module, an RLC model incorporating parasitic parameters of the gate drive circuit is established, and a sensitivity analysis of the peak current in the gate charge circuit is provided. Additionally, in the experimental circuit, an open sample of an IGBT module with partial bond wires lifted off is used to simulate actual faults. The analysis and experimental results indicate that the peak current of the gate charge is closely related to L and C. The significant deviation in the gate current, influenced by the partial bond wires lift-off, can provide a basis for the development of predictive methods for IGBT modules.

Comparative analysis of control strategies impact on power losses in IGBT power modules with a multiphysics‐circuit coupling method

AbstractPower losses in semiconductor devices present a significant impediment to advancing power electronics systems for achieving higher frequencies, improved efficiency, and greater integration. A major challenge lies in directly coupling power losses with various control strategies, considering the variations in manufacturers, packaging, and process structures within the power electronics field. This paper introduces a field‐circuit coupling simulation methodology of the insulated gate bipolar transistor (IGBT) within the Simulink/COMSOL environment, using a conventional three‐phase six‐switch voltage source inverter (VSI) IGBT module as a case study. A composite transfer function interconnects the electrical and thermal aspects, enabling bidirectional coupling between IGBT temperature and losses. This study aims to comprehensively compare the effects of various control strategies, namely, single‐vector, dual‐vector, and three‐vector current model predictive control (CMPC) and space vector pulse width modulation (SVPWM), on the losses and temperature of IGBT power modules. The findings emphasize that losses are significantly influenced by the selection of weighting factor coefficients and power factor settings under the same CMPC control strategy with a fixed switching frequency. Additionally, the selection of control strategies, such as CMPC and SVPWM, substantially impacts power losses in power electronic devices.

Multi-Physics Coupling in IGBT Modules: A Review

Abstract Since insulated gate bipolar transistor (IGBT) is a core component for power conversion in a power electronic system, guaranteeing the safety of IGBT becomes a crucial task for the maintenance of the power system. However, the mechanism of IGBT failure is a considerably complicated process related to the dynamic process, involving electric, thermal, and force. Hence, understanding the behaviors of IGBT under multi-physics field coupling plays an important role in the design and reliability studies of IGBT. In this paper, we review the multi-physics coupling effects, namely, electric-thermal coupling, thermal-force coupling, and force-electric coupling, inside IGBT devices. The basic principles of each coupling, coupling models, application occasions as well as key issues and development trends are discussed in detail, respectively.

A junction temperature model based on heat flow distribution in an IGBT module with solder layer voids

The presence of voids in a solder layer affects the thermal reliability of an insulated-gate bipolar transistor (IGBT). In this work, the effects of the size and fraction of solder layer voids and the power losses of chips on heat flow distribution, junction temperature and thermal resistance were investigated. It was found that it was difficult for the heat to flow through the voids due to the high thermal resistance of air. Therefore, the heat above the voids could only flow horizontally, and then avoid the voids and move downward in the solder layer and the following layers, leading to a temperature difference in the surface chip layer. An improved junction temperature model based on the heat flow distribution (HD) considering the solder layer voids was established, the horizontal thermal resistance and horizontal heat capacity are introduced to characterize the effect of the solder layer voids, and the parameter extraction method was proposed. The temperature difference on the surface of the module increased with the increase of the void fraction, and when the void fraction increased from 0 % to 40 %, the surface temperature difference increased from 9.591 °C to 109.86 °C. The results showed that the proposed model not only had a higher accuracy in the estimation of the junction temperature compared with the traditional Cauer model and the improved Cauer model, but also monitored the horizontal temperature differences in the chip layer precisely.

Critical solder joint in insulated gate bipolar transistors (IGBT) power module for improved mechanical reliability

This investigation identifies the critical solder joint in a typical Insulated Gate Bipolar Transistor (IGBT) module and provided new knowledge on how operating thermal loads degrade IGBT-attach, Diode-attach, and Substrate solder joints in the device. SolidWorks software is used to create three realistic 3-D Finite Element (FE) models of the typical IGBT module used in this investigation. In-service operating power and IEC 60068–2-14 thermal cycles are implemented in ANSYS mechanical package to simulate the response of the three solder joints in the FE models to the load cycles. The solder in the joints is lead-free alloy of 96.5% tin, 3% silver, and 0.5% copper (SAC305) composition. The SAC305 material properties are modelled as time and temperature dependent with Anand's visco-plastic model employed as the constitutive model. Results show that the key degradation mechanism of solder joints in IGBT module are stress, plastic strain, and strain energy magnitudes. Accumulated plastic strain in the joints is found the predominant damage factor. Critical solder joint in the module depends on the load cycle the device experiences. IGBT-attach solder joint is critical in active power load cycle. Substrate solder joint degraded most in passive thermal cum combined passive thermal and active power load cycles.

Online Recognition of Fallen-Off Bond Wires in IGBT Modules.

As a core component of power conversion systems, insulated gate bipolar transistor (IGBT) modules continually suffer from severe thermal damage caused by temperature swings and shear stress, resulting in fatigue failure. Bond wires falling off is one of the failure modes of IGBT modules. Given that the number of fallen-off bond wires is a significant parameter to evaluate the health status of the IGBT modules, this paper proposes an online identification model to recognize the number of fallen-off bond wires during normal operation. Firstly, a database containing datum Vce,on-Tj-IC (collector-emitter on-state voltage Vce,on, chip junction temperature Tj, collector current IC) planes with different fallen-off bond wires is built based on an offline aging test. Secondly, a Foster network model and a special circuit are designed to measure the junction temperature Tj and the collector-emitter on-state voltage Vce,on, respectively. Thirdly, the feature points of the IGBT module represented by Vce,on, Tj, and IC are given to the database to recognize the number of fallen-off bond wires according to the position of the feature points in the datum plane. The experimental results show that the proposed method can determine the fallen-off bond wires under the operation condition.

Lifetime Prediction Method of the Traction Converter IGBT Based on Plastic Strain Energy Density

Insulated gate bipolar transistor (IGBT) is the most important power electronic component in the traction converters of trains. During the operation of the IGBT, the solder layer is continuously subjected to alternating stress, which eventually leads to the fatigue failure of the solder layer. Therefore, an accurate assessment of the lifetime of the IGBT module solder layer is of great importance for the safe and reliable operation of the trains. Firstly, the micromechanism of the plastic deformation of the base solder layer of the IGBT module is introduced, as well as the lifetime model based on the plastic strain energy density. Then the total plastic strain energy density of the base solder layer is determined by conducting the accelerated aging tests on the IGBT module and combining the finite element simulation results. Meanwhile, the relationship between different aging degrees of the base solder layer of the IGBT module and the plastic strain energy density is studied by finite element simulation. Then, the lifetime of the base solder layer at different aging stages is calculated based on the above results so that the total lifetime of the IGBT module is obtained. Finally, the predicted lifetime of the IGBT module by the proposed method is compared with the lifetime obtained by the accelerated aging test and compared with the traditional lifetime prediction method based on the Coffin-Manson-Arrhenius model. The comparison results verify the accuracy of the proposed lifetime prediction method in this paper.

Using Machine Learning and Finite Element Analysis to Extract Traction-Separation Relations at Bonding Wire Interfaces of Insulated Gate Bipolar Transistor Modules.

For insulated gate bipolar transistor (IGBT) modules using wire bonding as the interconnection method, the main failure mechanism is cracking of the bonded interface. Studying the mechanical properties of the bonded interface is crucial for assessing the reliability of IGBT modules. In this paper, first, shear tests are conducted on the bonded interface to test the bonded interface's strength. Then, finite element-cohesive zone modeling (FE-CZM) is established to describe the mechanical behavior of the bonded interface. A novel machine learning (ML) architecture integrating a convolutional neural network (CNN) and a long short-term memory (LSTM) network is used to identify the shape and parameters of the traction separation law (TSL) of the FE-CZM model accurately and efficiently. The CNN-LSTM architecture not only has excellent feature extraction and sequence-data-processing abilities but can also effectively address the long-term dependency problem. A total of 1800 sets of datasets are obtained based on numerical computations, and the CNN-LSTM architecture is trained with load-displacement (F-δ) curves as input parameters and TSL shapes and parameters as output parameters. The results show that the error rate of the model for TSL shape prediction is only 0.186%. The performance metric's mean absolute percentage error (MAPE) is less than 3.5044% for all the predictions of the TSL parameters. Compared with separate CNN and LSTM architectures, the proposed CNN-LSTM-architecture approach exhibits obvious advantages in recognizing TSL shapes and parameters. A combination of the FE-CZM and ML methods in this paper provides a promising and effective solution for identifying the mechanical parameters of the bonded interfaces of IGBT modules.

Degradation state estimation for insulated gate bipolar transistor based on multi-scale fusion learning

Insulated gate bipolar transistor (IGBT) modules are widely used in power electronic systems. Estimating the degradation state of IGBT modules is especially crucial when operating under different conditions, as they are highly likely to experience aging or faults, resulting in system failure. However, a fixed time window is generally used, which is not easy to fully learn the correlation between data. To address the issues, this paper proposes a multi-scale fusion learning method for estimating the degradation state of IGBT. The method can effectively mine the short-term and long-term correlations of IGBT aging data, which helps to implement the accurate estimation based on IGBT aging data. To validate the effectiveness of the proposed method, the accelerated aging test data provided by the NASA Predictive Center of Excellence (PCoE) is utilized. The results show that the method can accurately estimate the degradation state of IGBTs.

Digital-Twin-Driven Intelligent Insulated-Gate Bipolar Transistor Production Lines.

With the rapid development of novel energy vehicles, power generation, photovoltaics, and other industries, power electronic devices have gained considerable attention. Insulated-gate bipolar transistors (IGBTs) have been widely used in those fields. With the emergence of intelligent manufacturing concepts such as Germany's "Industry 4.0" and China's "Made in China 2025", conventional manufacturing which needs to be upgraded with higher efficiency and yield is rapidly pivoting toward digitalization and intelligence. The digital twin methodology has been extensively used in various industries for constructing virtual models of physical entities, facilitating real-time data interconnection to reduce costs and improve efficiency. This study proposes a modular intelligent IGBT production line based on the digital twin. Real-time data are transmitted from a physical line to a digital line for storage and analysis. The digital line is visualized, and an intelligent management platform containing multiple functions is developed. Additionally, a process simulation database is established to obtain the optimal process parameters. Numerous quality issues that can arise during each process of IGBT packaging are addressed using a problem-solving approach based on the digital twin methodology. Consequently, this digital-twin-based IGBT intelligent production line effectively enhances yield rates and efficiency. IGBT modules with various packaging forms such as ACF, ACE, and ACD are manufactured.

Thermal and electrical evaluation of insulated gate bipolar transistor (IGBT) power modules

The thermal reliability of two different high-power insulated gate bipolar transistor (IGBT) modules was studied under both conduction and switching regimes by experimental and numerical approaches. Indeed, the reliability of semiconductor devices is tightly linked to the junction temperatures reached in the IGBT, which is a function of the diode chips present in such devices and its operating condition. However, measurements of the semiconductor temperatures are often difficult to be done, thus requiring modeling and simulation tools to accurately evaluate the instantaneous temperature under different thermal loads. For this reason, a transient 3D heat transfer numerical model of two different IGBT power devices was proposed using the Finite Element Method, assuming that heat is dissipated on the IGBT by natural convection and radiation. These simulations were validated with experimental measurements, obtained through infrared thermography, performed for the IGBT modules either opened or enclosed, varying the heat source, the module orientation and under conduction or switching regime. For the switching regime, power losses due to the gate-closing and gate-opening transitions between conducting and non-conducting states were taken into consideration. The heat losses were modeled assuming the time-dependent heat dissipation obtained by previous electrical simulations, and it was compared with time-averaged heat source solutions. Results showed that averaging the heat source can significantly reduce the computational time, allowing quick design explorations. Overall, the numerical model led to deviations of less than 16% over the transient heating and at steady-state. Finally, the impact of a heat sink attached to the IGBT was studied, demonstrating that the proposed model can be used for accurate and quick investigations of potential failures and for the development of more efficient IGBT devices.

Real-Time Temperature Prediction of Power Devices Using an Improved Thermal Equivalent Circuit Model and Application in Power Electronics.

As a core component of photovoltaic power generation systems, insulated gate bipolar transistor (IGBT) modules continually suffer from severe temperature swings due to complex operation conditions and various environmental conditions, resulting in fatigue failure. The junction temperature prediction guarantees that the IGBT module operates within the safety threshold. The thermal equivalent circuit model is a common approach to predicting junction temperature. However, the model parameters are easily affected by the solder aging. An accurate temperature prediction by the model is impossible during service. This paper proposes an improved thermal equivalent circuit model that can remove the effect of solder aging. Firstly, the solder aging process is monitored in real-time based on the case temperatures. Secondly, the model parameters are corrected by the thermal impedance from chip to baseplate based on the linear thermal characteristic. The simulation and experimental results show that the proposed model can reduce the temperature prediction error by more than 90% under the same aging condition. The proposed method only depends on the case temperatures to correct the model parameters, which is more economical. In addition, the experimental and simulation analysis in this work can help students of power electronics courses have an in-depth knowledge of power devices' mechanical structure, heat dissipation principles, temperature distribution, junction temperature monitoring, and so on.

Analysis of Blocking Capability Failure Mechanism in IGBT Module Under High Salt Spray Environment

High salt spray environment is a threat to the long-term stability and the robustness of an insulated gate bipolar transistor (IGBT) module. Failure mechanisms of IGBTs have been discussed in normal and high humidity environment, which in high salt spray environment is unclear and seldom reported. In this paper, experiments in high salt spray environment are conducted on wire-bonding IGBT modules to reveal failure mechanism. Different degradations of the blocking capability are observed for the same packaged IGBTs in the salt spray environment. Based on experiment results, degradation substances in the internal package are analyzed by means of scanning electron microscope (SEM) and X-ray diffraction (XRD) to reveal the key composition affecting the blocking capability of IGBT switches. Finally, a failure model is used to reveal the mechanism that the insulation strength of the terminal area in the chip edge is reduced by substances, resulting in the blocking failure of IGBT switches. The analysis of IGBT module failure mechanism is of great significance to reliability evaluation and optimal design for package structures of power modules applied in harsh environments.

Simulation of Thermal Dissipation and Fatigue Properties of a Pressing Sealed Insulated Gate Bipolar Transistor Device

Insulated gate bipolar transistor (IGBT) is widely needed in many applications, such as motors, inverters, express railways, and automobiles. As the integrity level of IGBT increases, thermal management becomes a more significant issue, especially when third-generation semiconductor chips made with SiC or GaN come into application. Here, a press packaging SiC IGBT module is designed, which involves silver sintering. Firstly, we make a thermal analysis using the finite element method (FEM). Then, a heat dissipation plane is optimized. Groups of heat sink materials and airflow velocities are investigated, and an optimized one is chosen as the basis of further fatigue analysis. In the simulated working condition, the maximum temperature can reach 100°C, which could further induce serious problems in fatigue performance. We have analyzed 4 models with different silver layer edge shapes. The best one shows a 27% higher expected fatigue life than the standard one, which shows that the fatigue performance is very sensitive to the edge shape of the silver layer. This research can help further optimization and designing of advanced IGBT devices.

Study on spray cooling characteristics of dry ice particles for IGBT in high-speed trains{fr}Etude des caractéristiques de refroidissement par pulvérisation des particules de glace sèche pour l'igbt dans le train à grande vitesse

Aiming at the high efficiency cooling problem of IGBT(Insulated Gate Bipolar Transistor) module of traction converter for high-speed Train, a method of spray cooling with natural dry ice particles was proposed. The heat sinks with pin-fin and straight-fin structure were designed, and the heat sinks with optimum structure size selected by simulation were developed, and the heat sinks were provided with visual shells, as well as single outlet, double outlet and four outlet of the three different ways of outlet. The gas-solid two-phase flow, heat and mass transfer characteristics of dry ice particles in the heat sinks were studied by means of simulation and experiment. By comparison, it is found that the flow and heat transfer in the pin-fin heat sink have a good cooperation, and it is most suitable for the IGBT module with spray cooling of dry ice particles, which can reduce the temperature of IGBT from 70 ℃ to 55 ℃ in 75 s, compared with the fin-free heat sink, the heat transfer performance is improved by 12 %, and the double-outlet pin-fin heat sink has the best effect, the temperature difference of the heat transfer substrate is 19.8 ℃, and the average temperature of the heat transfer substrate is only 22.5 ℃ compared with that of the open type, which is 27.3 ℃ lower. Double outlet dry ice particles spray pin-fin heat sink is an efficient heat sink, thermal resistance is only 0.066 K/W, it can meet the current practical application of high-speed train cooling needs, solve the problem of heat dissipation of IGBT module for high-speed train, it lays a foundation for the development of dry ice particles spray heat sink.

Degradation state analysis of the IGBT module based on apparent junction temperature

The multi-chip parallel insulated gate bipolar transistor (IGBT) is the core device in large-capacity power electronic equipment, but its operational reliability is of considerable concern to industry. The application of IGBT online degradation state analysis technology can be beneficial to the improvement of system reliability. The failure mechanism of IGBT devices is discussed in this paper, and a technique for analyzing the degradation state of IGBT based on apparent junction temperature is proposed. First, the distortion consistency of the voltage rise time in various failures is discussed, and the junction temperature dependence of the voltage rise time is then demonstrated. Subsequently, an apparent junction temperature model based on the voltage rise time is established (the fitting accuracy is as high as 94.3%). From the high-frequency model in the switching process of the device, an online extraction technology of key parameters (e.g., voltage rise time) is developed. Finally, an experimental platform for IGBT degradation state estimation is established, and the feasibility of IGBT degradation state estimation based on apparent junction temperature is proved, especially the degradation of bonding-wire and the gate-oxide-layer. The experimental results show that the proposed IGBT degradation state estimation technique based on apparent junction temperature is a reliable online estimation method with non-contact, high accuracy, and comprehensiveness.