Analysis of Blocking Capability Failure Mechanism in IGBT Module Under High Salt Spray Environment

Abstract

High salt spray environment is a threat to the long-term stability and the robustness of an insulated gate bipolar transistor (IGBT) module. Failure mechanisms of IGBTs have been discussed in normal and high humidity environment, which in high salt spray environment is unclear and seldom reported. In this paper, experiments in high salt spray environment are conducted on wire-bonding IGBT modules to reveal failure mechanism. Different degradations of the blocking capability are observed for the same packaged IGBTs in the salt spray environment. Based on experiment results, degradation substances in the internal package are analyzed by means of scanning electron microscope (SEM) and X-ray diffraction (XRD) to reveal the key composition affecting the blocking capability of IGBT switches. Finally, a failure model is used to reveal the mechanism that the insulation strength of the terminal area in the chip edge is reduced by substances, resulting in the blocking failure of IGBT switches. The analysis of IGBT module failure mechanism is of great significance to reliability evaluation and optimal design for package structures of power modules applied in harsh environments.