Upright ZnO/GaN/InGaN core–shell nanorods arrayed in a well defined pattern are very good candidates for sensing applications. In our approach, we grew single ZnO nanopillars on top of ordered GaN pyramids, which were subsequently overgrown with GaN and a single InGaN quantum well, followed by a final GaN barrier layer. Spatially and spectrally resolved low temperature cathodoluminescence was used to investigate the optical properties of the rods. We found the dominant quantum well luminescence to be well defined and homogeneously distributed, with a maximum intensity at the edges of the pillars. Although the hydrogen atmosphere during the nitride growth together with the elevated growth temperature should lead to complete desorption of the initial ZnO pillar template, we found evidence for ZnO relicts on the pillar surface, and for incorporation of Zn in GaN at the tips of the rods. Furthermore, we were able to distinguish between the luminescence contributions from the quantum well, Zn-doped GaN, and possible structural defects.