An electrically driven quantum dot-in-nanowire visible single photon source operating up to 150 K

Abstract

We demonstrate electrically pumped single photon emission up to 150 K from a single InGaN quantum dot embedded in a GaN nanowire junction diode. The InGaN dot-in-nanowire p-n junctions were grown on silicon by molecular beam epitaxy. The exciton electroluminescence from individual dot-in-nanowires is in the green spectral range (λ ∼ 520 nm) and is detectable up to 150 K. Second order autocorrelation measurements performed at the exciton energy at an ambient temperature of 125 K show a background corrected g(2)(0) equal to 0.35, indicating dominant single photon emission. The steady state nanowire temperature under these conditions is estimated to be 150 K due to Joule heating induced by the large nanowire series resistance. Time resolved photoluminescence measurements yield an exciton radiative lifetime of 1.1 ns.