Strong Visible Light Emission from Zinc-Blende InGaN/GaN Pn Junction on Silicon Substrate

Abstract

The zinc-blende GaN (c-GaN) crystals on Si(100) substrates were successfully grown by metal organic chemical vapor deposition (MOCVD) technique with BP buffer layer. The cubic phase purity was higher than 93%. We also grew InGaN single quantum well (SQW) on n-type c-GaN and cover with p-type c-GaN to make pn junction. When the electric current passed through the pn junction, surprisingly strong light was emitted from the junction.