Influence of ion beam bombardment on characteristic of InGaN/GaN single quantum well grown by metal–organic chemical vapor deposition

Abstract

The influence of ion beam bombardment on sapphire substrate was investigated on the electrical and optical characteristics of Indium–Gallium–Nitride/Gallium–Nitride (InGaN/GaN) single quantum well (SQW) structure. Ion bombardment of N+, He+, H+ ions were made on single crystal substrate of sapphire with dose of 1 × 1014–17 ions/cm2. The InGaN/GaN SQW was fabricated on the ion beam bombarded sapphire substrate in two-flow Metal Organic Chemical Vapor Deposition (MOCVD) equipment. The thickness of InGaN/GaN SQW was about 20 nm and the composition of InGaN/GaN SQW was found to be In0.1Ga0.9N. In PL spectra, it is found that InGaN/GaN SQW was emitted from 441.1 to 446.6 nm (2.8–2.7 eV). The highest mobility value of 118 cm2/V–S and the lowest carrier concentration of 3.41 × 1017/cm2 was found for N of 1016 ions/cm2 ion beam bombarded sample. The optimal condition for InGaN/GaN SQW on sapphire substrate of ion beam bombardment was deduced to be N+ ion dose of 1016 ions/cm2.