Abstract
The overall photoluminescence properties of In 0.53Ga 0.47As/In 0.52Al 0.48As single quantum well and multiple quantum wells of the same InGaAs well width 4.0 nm are reported. Results show that the dominant recombination processes in the two structures are radiative recombination in the whole measuring temperature range from the photoluminescence intensity–excitation power dependence, but the recombination process in the single quantum well structure is somewhat like band-to-band type. The band gap–temperature dependence relationship, photoluminescence peak's full width at half maximum–temperature dependent relationship and the photoluminescence spectra line shape at low temperature are in favor of the gradual evolution from excitonic to band-to-band type in the single quantum well structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
