InGaAs/InGaAsP multiple quantum wells (MQWs) as semiconductor materials are commonly used in semiconductor lasers and solar cells. However, the problem of the increase in surface roughness due to the diffusion of P atoms in the barrier layer caused by the memory effect and the As/P exchange between the InGaAs well layer and the InGaAsP barrier layer has not been well resolved. In this work, the GaAs material was designed as the insertion layer (ISL) and the residual group-V source evacuation (RSE) methord was used in the structure of InGaAs/InGaAsP MQWs. It was found that when the GaAs ISL thickness was 6 nm and the RSE time was 20 s, the performance of InGaAs/InGaAsP MQWs was the best. Test results showed that the InGaAsP barrier ensured more radiative recombination in the MQWs structure. Meanwhile, the GaAs ISL reduced the diffusion of As and P atoms in the potential layer and improved the crystal quality. The InGaAs/InGaAsP MQWs with GaAs ISL create conditions for innovative applications of optimally integrated next-generation semiconductor lasers.