Abstract
Selective metalorganic chemical vapor deposition growth with diblock copolymer nanopatterning is utilized to produce InGaAsP(Q1.15 μm)/In0.53Ga0.47As/InGaAsP(Q1.15 μm) and InP/In0.53Ga0.47As/InP quantum dots (QDs) on InP substrates. The QD patterning is prepared by dense nanoscale diblock copolymer lithography followed by pattern-transfer onto a dielectric template mask and reactive ion etching is utilized to form nanosized openings exposing the underlying InGaAsP layer. By varying the In0.53Ga0.47As layer thickness within the QDs, the emission wavelength can be selected within the 1.4–1.6 μm region. Strongest photoluminescence (PL) intensity is observed from QDs employing InP rather than InGaAsP barriers, demonstrating room temperature PL near 1.6 μm.
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