Abstract

AbstractColumnar InAs quantum dots (QDs) with polarization‐independent luminescence were formed on InP(001) by metalorganic vapor‐phase epitaxy. Self‐assembled small QDs with lateral sizes of around 20 nm were formed by using a low growth temperature of 430 °C. Columnar QDs with heights comparable to their lateral sizes were formed by closely stacking the small QDs with tensile‐strained InGaAsP barriers. Polarized‐independent photoluminescence was obtained for a broadband of 1.3–1.6 µm at room temperature. These QDs promise to provide polarization‐insensitive semiconductor optical amplifiers. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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