Indium Mole Fraction Research Articles

Carrier Density and Thickness Optimization of InxGa1-xN Layer by Scaps-1D Simulation for High Efficiency III-V Solar CelL

In this study, the indium gallium nitride (InxGa1-xN) p-n junction solar cells were optimized to achieve the highest conversion efficiency. The InxGa1-xN p-n junction solar cells with the whole indium mole fraction (0 £ x £ 1) were simulated using SCAPS-1D software. Optimization of the p- and n-InxGa1-xN layer's thickness and carrier density were also carried out. The thickness and carrier density of each layer was varied from 0.01 to 1.50 µm and 1015 to 1020 cm-3. The simulation results showed that the highest conversion efficiency of 23.11% was achieved with x = 0.6. The thickness (carrier density) of the p- and n-layers for this In0.6Ga0.4N p-n junction solar cell are 0.01 (1020) and 1.50 μm (1019 cm-3), respectively. Simulation results also showed that the conversion efficiency is more sensitive to the variations of layer's thickness and carrier density of the top p-InxGa1-xN layer than the bottom n-InxGa1-xN layer. Besides that, the results also demonstrated that thinner p-InxGa1-xN layer with higher carrier density offers better conversion efficiency.

Device-circuit analysis of ultra-thin body In1−x Ga x As on insulator MOS transistor with varying indium mole fraction and channel thickness

In this paper, with the help of a well-calibrated simulation study, we explore the design space of ultra-thin body In1−x Ga x As-on-Insulator MOS transistor. We have studied the effect of Indium content, and channel thickness on carrier mobility, different analog figure of merits such as transconductance, transconductance generation factor, output conductance, and intrinsic gain of UTB III–V on Insulator MOS transistor. Moreover, we have analyzed the RF performance of the device in terms of unity gain cut-off frequency and maximum oscillation frequency. To verify frequency response characteristics and DC transfer characteristics, the circuit implementation of the UTB III–V on Insulator MOS transistor was performed on a cascode amplifier and differential amplifier. Our result shows that while increasing channel thickness and Indium content, the carrier transport property of the device improves. With an increase in channel thickness and Indium content, a significant improvement in carrier mobility is observed. Due to the poor electrostatic integrity, off-state current of the device increases with channel thickness and Indium content. Due to enhanced transport property, drain current, transconductance, unity gain cut-off frequency, and maximum oscillation frequency also improve. The improvement in analog and RF figure of Merits are also reflected in circuit performance.

Sensitivity of indium molar fraction in InGaN quantum wells for near-UV light-emitting diodes

InGaN-based quantum wells (QWs) have higher threading dislocation density (TDD) in InGaN Light-emitting diode (LED). Despite of higher TDD, variation of Indium (In) molar fraction in the QW generate localized excitons with higher Indium composition, thus preventing bound carriers from non-radiative recombination. In this work, the sensitivity of the Indium molar fraction in InGaN QWs is explored for near-ultraviolet (UV) LEDs. The theoretically calculated results show that as the Indium composition increases in InGaN QWs, the radiative recombination increases along with an increase in carrier injection efficiency. The reduced non-radiative recombination for higher Indium composition leads to the enhanced spontaneous emission rate and internal quantum efficiency (IQE). For lowered Indium composition, the peak emission wavelength of the InGaN LEDs shift toward the shorter wavelength and the performances degrade drastically. Hence for shorter UV LEDs, the AlGaN-based device structure should be a suitable choice.

Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted for Infrared optoelectronic devices. In this work, the temperature dependent photoluminescence (TDPL) analysis of In-rich InxGa1−xAs (x = 0.65: S1, x = 0.661: S2, and x = 0.667 S3) samples is of the central focus. The S-shaped behavior recorded at low temperature range in the III-V ternary is quantitatively studied herein by Localized State Ensemble (LSE) model. A comparison between the semi-empirical evolution of luminescence versus temperature and our numerical simulation proves the adequacy of computational details, used in LSE model, in well reproducing the S-shape feature. The numerical simulation well matched with PL spectra proving that the localization phenomenon is stronger when increasing the Indium mole fraction. The clustering effect in In-rich structure seems to be beneficial for enhancing the carrier localization within InxGa1−xAs by localizing carriers from away extended defects that behave probably as non-radiative centers. This is indicative of the utmost importance of localization phenomenon in trapping carriers within localized states instead of dislocations and defects, owing to clustering of indium atoms.

InAl(Ga)N: MOCVD thermodynamics and strain distribution

One of the obstacles in obtaining high quality and high indium-molar fraction InAl(Ga)N is the higher vapor pressure of nitrogen over group-III elements, especially indium. In this work, we used a thermodynamically motivated approach to increase the nitrogen content in vapor phase through the ammonia input partial pressure and its role on the composition of indium-rich InAl(Ga)N layers is investigated. It is shown that the increase in indium molar fraction coincides with the ammonia input partial pressure and independent of the two growth regimes: surface kinetics limited and mass transport limited. In parallel, molecular dynamics based on empirical potentials is carried out in order to investigate the strain behavior resulting from such growth kinetics. It is unveiled that at the InAl(Ga)N/GaN interface, tensile strain on Al–N and Ga–N bonds is enhanced and compressive strain in In–N bonds is relaxed. In contrast, on top of a layer, Al–N and Ga–N bonds are comparatively relaxed and In–N bonds are relatively more compressed. Clearly, this work provides a comprehensive overview of the metal-organic chemical vapor deposition (MOCVD) thermodynamics of InAl(Ga)N layers.

Study and optimization of InGaN Schottky solar cell performance

In this work, an extensive numerical simulation of an InxGa1−xN Schottky barrier solar cell is carried out using Silvaco ATLAS simulator. Firstly, the effect of different Schottky metals and Indium fraction (in InxGa1−xN compound) on the solar cell output parameters are studied. A standard Platinum (Pt) work function of 5.65 eV gave a low efficiency of about 7.10% for an Indium (In) molar fraction of 0.54. Since other studies have shown that Pt may have higher work function, this latter was scanned from 5.65 to 6.35 eV. Consequently, the efficiency increased from 7.10% to 22.18% for a work function of 6.35 eV and a 0.7 In fraction. Additional optimizations improved the cell efficiency to 23.3%, by introducing a 4 µm thick intrinsic In0.7Ga0.3N layer between Pt and the doped In0.7Ga0.3N. Further improvement is achieved using a gradual band gap intrinsic layer. Furthermore, this gradual band gap intrinsic layer reduces the effect of interface traps which were found to induce serious degradation of the cell efficiency. The introduction of this gradual band gap intrinsic layer provides a cell efficiency of 38.42% at low trap densities and 28.8% at higher densities.

Efficient optical-to-terahertz conversion in large-area InGaAs photo-Dember emitters with increased indium content.

In this Letter, optical-to-terahertz (THz) conversion of 800 nm femtosecond laser pulses in large-area bias-free InGaAs emitters based on photo-Dember (PD) and lateral photo-Dember (LPD) effects is experimentally investigated. We use metamorphic buffers to grow sub-micrometer thick InxGa1-xAs layers with indium mole fractions x=0.37, 0.53, and 0.70 on a GaAs substrate. A strong enhancement of THz output energy with an increase of indium content is observed. On the surface of the sample providing the strongest emission (x=0.7), we have fabricated a 1.5cm2 area of asymmetrically shaped metallic grating for LPD emission. This LPD emitter allows achieving high conversion efficiency of 0.24⋅10-3 and a broad generation bandwidth of up to 6 THz. We also demonstrate that there is no significant difference in the conversion efficiency when operating at 1 and 200 kHz repetition rates. Our results show that large-area LPD emitters give a convenient, competitive way to generate intense high-repetition-rate THz pulses.

A Comprehensive Benchmarking Method for the Net Combination of Mobility Enhancement and Density-of-States Bottleneck

In this letter, we propose a comprehensive benchmarking method to simultaneously address mobility enhancement and density-of-states bottleneck in advanced field-effect-transistors (FETs) with novel high-mobility (high-μ) channel materials, where we focused on conventional covalent bonding semiconductors with pure and partially ionic character. This method relies only on the measured extrinsic transconductance of a long-channel FET in the saturation regime together with the source resistance, yielding the product of the effective mobility ( μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) and effective gate capacitance ( C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g_eff</sub> ). We tested this method in In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> As quantum-well high-electron-mobility transistors (HEMTs) with various indium mole fractions, such as 0.53, 0.7, 0.8 and 1, as well as in Si n-FETs. We found that the In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> As HEMTs with μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> over 10,000 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V·s at 300 K provided more than 20 times greater μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ×C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g_eff</sub> than Si n-FETs. More specifically, the product initially improved as x increased, then showed a peak value of 10,300 μF·V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> ·s <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> at x of around 0.8, and degraded slightly beyond that composition. To verify the validness of the proposed method, we separately measured and analyzed C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g_eff</sub> and μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> using the split-CV technique, showing excellent agreement with the ones from the proposed method.

Photoluminescence excitation spectroscopy for structural and electronic characterization of resonant tunneling diodes for THz applications

Photoluminescence excitation spectroscopy (PLE) and high-resolution x-ray diffraction (HR-XRD) are used to characterize the structural and electronic properties of high current density InGaAs/AlAs/InP resonant tunneling diode wafer structures. The non-destructive assessment of these structures is challenging, with several unknowns: well and barrier thickness, the well indium molar fraction, and band-offsets, which are a function of strain, material, growth sequence, etc. The low temperature PL spectra are deconvoluted through simulation and are shown to include contributions from type I (e1–hh1) and type II (conduction band–hh1) transitions that are broadened due to interface fluctuations on a range of length scales. PLE data are obtained by a careful choice of the detection wavelength, allowing the identification of the e2hh2 transition that is critical in determining the band-offsets. An agreement between the HR-XRD data, the PL, and the PLE data is only obtained for a given conduction band offset of 58.8%. This scheme, combining HR-XRD, PL, and PLE, consequently provides crucial electronic and structural information non-destructively.

Fang–Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures* *Project supported by the Xi’an Science and Technology Program, China (Grant No. 2019217814GXRC014CG015-GXYD14.3) and the Open Project of Key Laboratory of Wide Band-gap Semiconductor Materials, Ministry of Education, China (Grant No. Kdxkf2019-01).

To study the electron transport properties in InGaN channel-based heterostructures, a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier. Various scattering mechanisms, such as dislocation impurity (DIS) scattering, polar optical phonon (POP) scattering, piezoelectric field (PE) scattering, interface roughness (IFR) scattering, deformation potential (DP) scattering, alloy disorder (ADO) scattering from InGaN channel layer, and temperature-dependent energy bandgaps are considered in the calculation model. A contrast of AlInGaN/AlN/InGaN/GaN double heterostructure (DH) to the theoretical AlInGaN/AlN/InGaN single heterostructure (SH) is made and analyzed with a full range of barrier alloy composition. The effect of channel alloy composition on InGaN channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.04 for higher mobility in DH with Al0.4In0.07Ga0.53N barrier. Finally, the temperature-dependent two-dimensional electron gas (2DEG) density and mobility in InGaN channel-based DH with Al0.83In0.13Ga0.04N and Al0.4In0.07Ga0.53N barrier are investigated. Our results are expected to conduce to the practical application of InGaN channel-based heterostructures.

Influence of Internal Electric Field on the Spectral Characteristics of Blue GaN-Based Superluminescent Light-Emitting Diodes

The effects of internal electric field on the spectral characteristics of InxGa1−xN/GaN superluminescent light-emitting diodes are studied theoretically. The Schrodinger and Poisson equations and the rate and optical propagating equations are solved in the presence of the internal electric field. By increasing the indium mole fraction in the quantum well, the internal electric field increases linearly. The injection current affects the intensity, bandwidth and wavelength of the spectrum. The results show that the internal electric field shifts the spectral radiations to the red region. Also, in the presence of internal electric field, the peak intensity of spectra increases, and the optical gain reduces.

Critical thickness as a function of the indium molar fraction in cubic InXGa1-XN and the influence in the growth of nanostructures

The critical thickness for the relaxation of cubic (β) InXGa1-XN layers grown over (002) β-GaN/MgO, with different indium content, particularly of 17, 44, and 70% have been determined experimentally. The layers were grown by plasma-assisted molecular beam epitaxy. In all the samples studied, the critical thickness (hc) of the pseudomorphic layer was measured with a frame-by-frame analysis of reflection high energy electron diffraction (RHEED) patterns. The growth mode transition during layer growth was identified via RHEED patterns, from layer by layer or 2D to 3D growth mode by gradually transitioning from a streaky to a spotty pattern. The experimental hc value of β-InXGa1-XN on β-GaN was compared to values calculated from the Fisher model. For the indium concentration of x = 0.44, the self-assembling epitaxial nanostructures were successfully grown in the Stranski–Krastanov growth mode with a critical thickness of 1.8 ± 0.7 nm. The β-In0.44Ga0.56N nanostructures showed a variation in morphology and density depending on the deposition time; self-assembled nanodots and nano-bars were confirmed by atomic force microscopy. Photoluminescence spectra of β-In0.44Ga0.56N nanostructures showed emissions associated with quantum confinement; these peaks indicate a blue shift with respect to the bulk.

High-responsivity (In0.26Ga0.74)2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition

We report on the demonstration of (InxGa1-x)2O3 (InGaO)-based UV photodetectors realized using a low temperature (∼200 °C) microwave irradiation-assisted deposition technique. By irradiating a solution of the substituted acetylacetonate (acac) complex, namely In0.6Ga0.4(acac)3, employed as the “single-source precursor”, InGaO film was deposited on sapphire substrate, and found to be poly(nano)crystalline, with root mean square (r.m.s). roughness of 8.9 nm. However, the indium content of the film (0.26 mol fraction) was considerably less than in the metal complex (0.6 mol fraction). The optical band gap of the film was found to be 4.5 eV from Tauc’s plot, indicative of a low indium mole fraction. This was confirmed using X-ray photoelectron spectroscopy measurements, from which the indium mole fraction was found to be 0.26. Further, the nature of band gap was determined and defect analysis was carried out using, respectively, Tauc’s plot and cathodoluminescence (CL) measurements. A planar, interdigitated metal-semiconductor-metal (MSM) photodetector fabricated with the InGaO film exhibited a high responsivity of 16.9 A/W at a bias of 20 V, corresponding to a band edge at ∼ 276 nm, with a high photo-to-dark current ratio of ∼105.

Longitudinal optical Raman mode A1 to calculate the indium molar fraction of epitaxial InGaN layers grown by LP-MOCVD on polar and non-polar planes

This work discusses the frequency shift of Raman mode A1(LO) for InGaN epitaxial layers grown on polar (0002) and non-polar (11–20) planes concerning strain state, indium composition, and the probe excitation energy. Furthermore, it proposes MOCVD growth conditions to grow fully relaxed polar and non-polar InGaN layers, without indium droplets formation. Then, using the probe excitation energies of 2.33 eV and 2.68 eV, Raman measurements exhibited phonon mode A1(LO) frequency shift in polar and non-polar InGaN. Besides, theoretical calculations showed that for x < 0.20, and changing the excitation energy from 2.33 to 2.68 eV, the expected frequency shift is less or equal to 15 cm−1. Also, the XRD spectra exhibited two different indium compositions for non-polar a-plane InGaN and one composition for polar c-plane InGaN. According to XRD, for non-polar a-plane InGaN, the frequency shift measured corresponds to an indium composition gradient along the growth direction and the probe excitation energy change. On the other hand, for polar c-plane InGaN, the frequency shift measured is attributed to the probe excitation energy change. Also, AFM showed that there is an excellent island coalescence in GaN and InGaN epitaxial growth. The average surface roughness for polar InGaN was 75.678 nm and was 61.216 nm for non-polar InGaN. Moreover, these values are ten times smaller than their peak-to-peak distance, and the growth follows the Stranski–Krastanov model. FWHM for all samples corresponds to a total dislocations density of ~ 109/cm2 near the surface.

A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs

This paper presents a physics-based compact of indium mole fraction dependent analytical model for static and dynamic characteristics of GaN-based MOS-HEMTs. The model covers all the different operating regimes of the MOS-HEMT devices. The model is evaluated step by step with excellent agreement compared with the simulated data obtained by Atlas-TCAD simulation and the experimental data have demonstrated the validity of the proposed model for different indium mole fractions (12, 15, 17, and 18)%. From static and dynamic characteristics, it is also observed that by careful setting of the indium mole fraction for GaN-based MOS-HEMTs can improve the performance of the device, and; hence, it is proper for high performance low loss applications. MOS-HEMTs produce high drain current of 1227 A/m at a positive gate bias $$V_{\rm{gs}}$$ of 3 V and with 15% of indium mole fraction, high transconductance of 268 S/m, and high cut-off frequency of 35 GHz at x = 18% indium mole fraction.

Impact of growth conditions and strain on indium incorporation in non-polar m-plane (101¯) InGaN grown by plasma-assisted molecular beam epitaxy

We establish the relationships between growth conditions, strain state, optical and structural properties of nonpolar m-plane (101¯0) InGaN with indium composition up to 39% grown by plasma-assisted molecular beam epitaxy. We find that indium mole fraction as a function of growth temperature can be explained by an Arrhenius dependence of InN decomposition only for high temperature and low indium composition InGaN films. For the samples following the Arrhenius behavior, we estimate the effective activation energy for InN thermal decomposition in m-plane InGaN to be about 1 eV. This value is approximately a factor of two smaller than that reported for c-plane InGaN films. At low growth temperatures, InGaN layers show less efficient indium incorporation than predicted by Arrhenius behavior. We attribute the lower than expected indium composition at low temperatures to the strain-induced compositional pulling effect. We demonstrate that at 540 °C, the increase in the InGaN layer thickness leads to a preferential strain relaxation along the a-direction and an increase in the indium composition. For the indium mole fraction up to x ∼ 0.16, 30-nm-thick m-plane InGaN layers can be coherently grown on GaN with smooth morphology and pronounced low-temperature photoluminescence indicating that the material quality is suitable for device applications.

Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors

The InN/GaN digital alloy is a superlattice-like nanostructure formed by periodically stacking ultra-thin InN and GaN layers. In this study, we calculate the electron mobility in InN/GaN digital alloy channel high electron mobility transistors (HEMTs) by performing a single-particle Monte Carlo simulation. The results of the simulation show that alloy-induced scatterings have little impact and the electron mobility significantly improves as the effective indium mole fraction of the channel increases. This contrasts with InGaN alloy channel HEMTs, where alloy disorder and random dipole scatterings have a strong impact and the electron mobility decreases as the indium mole fraction of the channel increases.

Effects of helium annealing in low-temperature and solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

In this paper, low-temperature, solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) with annealing temperatures as low as 300°C were fabricated using different annealing gases of He, N2, and O2 and their electrical characteristics and long-term stability were analyzed. The field-effect mobility was improved by nearly two times for the a-IGZO TFTs annealed in helium ambient (He sample) in comparison with those annealed in oxygen and nitrogen ambient environments. The subthreshold slope and threshold voltage were also improved for the a-IGZO TFTs annealed in the helium ambient environment due to the low defect density of states in the sub-bandgap region. However, X-ray photoelectron spectroscopy measurements indicate that the electrical characteristics of the low-temperature solution-processed a-IGZO TFTs show severe channel-length dependencies due to the oxygen vacancy variations in the active region. In addition, long-term stability measurements up to seven days reveal that due to the inherently low electron density and high defect density of states in the active region, an increase in the carrier density in the active region induces a large negative shift of the threshold voltage without changing the field-effect mobility or subthreshold slope. It is understood that low-temperature solution-processed a-IGZO TFTs strongly depend on the formation of oxygen vacancies, which can be resolved by controlling the indium mole fraction under a helium annealing condition.

Performance enhancement of field effect transistor without doping junctions using In0.3Ga0.7As/GaAs for analog/RF applications

Reduction of transconductance related to the junctionless silicon (JL-Si) transistor shows challenges to its performance for analog/radio frequency (RF) applications. An effective way to increase the transconductance of JL-Si device without reducing its performance is to use III–V semiconductor materials with a high carrier mobility/velocity instead of silicon. In the present study, the application of In[Formula: see text]Ga[Formula: see text]As/GaAs structures is proposed in order to enhance the transconductance of double gate JL (DG-JL) with channel length of 10 nm and body thickness of 5 nm. The importance of the thickness of In[Formula: see text]Ga[Formula: see text]As layer as well as the indium mole fraction on the electrical characteristics of the proposed device is shown in terms of the transconductance by a numerical simulator. By decreasing the thickness of the In[Formula: see text]Ga[Formula: see text]As layer down to 1 nm for a specified mole fraction of 0.3, a maximum transconductance of 1.7 mS/um was obtained. Comparing the results of JL-In[Formula: see text]Ga[Formula: see text]As/GaAs device with JL-GaAs, JL-In[Formula: see text]Ga[Formula: see text]As and JL-Si structures, an increase of 21%, 18% and 44% in transconductance, respectively, was found. Moreover, simulation results show that the proposed structure exhibits output resistance of 300 G[Formula: see text], intrinsic gain of 32.5 dB and unity gain cut-off frequency of 513 GHz. Thus, the JL-In[Formula: see text]Ga[Formula: see text]As/GaAs device can be a good candidate for analog/RF applications.

Theoretical Investigation on Electron Mobility in AlInGaN/InGaN Heterostructures

The dependences of electron mobility in AlInGaN/InGaN heterostructure on the barrier and channel alloy compositions and on temperature are investigated including six scattering processes: acoustic deformation potential (DP) scattering, piezoelectric field (PE) scattering, polar optical phonons (PO) scattering, dislocation impurity (DIS) scattering, interface roughness (IRF) scattering, and alloy disorder (ADO) scattering. The results show that ADO scattering is the most important scattering mechanism, and specifically channel alloy disorder gets severer than barrier alloy disorder except for InGaN channels with very low indium content (near 0) or extremely high indium mole fraction (near 1). The variations of the barrier strain, two‐dimensional electron gas (2DEG) density, 2DEG mobility, and conductivity in AlInGaN/In0.04Ga0.96N heterostructure with full barrier alloy composition are summarized. The results indicate that relatively large aluminum content and small indium mole fraction are desired for higher conductivity. By comparing the temperature‐dependent transport properties of Al0.83In0.13Ga0.04N/InGaN heterostructures with different InGaN compositions, we find that it is the ADO scattering and PO scattering that determine 2DEG mobility change and the mobility exhibits a weaker dependence on temperature with increasing indium mole fraction in InGaN channel.